3N246_08 [VISHAY]
Glass Passivated Single-Phase Bridge Rectifier; 玻璃钝化单相桥式整流器型号: | 3N246_08 |
厂家: | VISHAY |
描述: | Glass Passivated Single-Phase Bridge Rectifier |
文件: | 总4页 (文件大小:103K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
KBP005M thru KBP10M, 3N246 thru 3N252
Vishay General Semiconductor
Glass Passivated Single-Phase Bridge Rectifier
FEATURES
• UL recognition file number E54214
• Ideal for printed circuit board
e4
• High surge current capability
• High case dielectric strength
−
~
+
~
~
−
• Solder dip 260 °C, 40 s
~
+
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Case Style KBPM
TYPICAL APPLICATIONS
General purpose use in ac-to-dc bridge full wave
rectification for switching power supply, home
appliances, office equipment, and telecommunication
applications.
PRIMARY CHARACTERISTICS
IF(AV)
1.5 A
VRRM
IFSM
IR
50 V to 1000 V
60 A
MECHANICAL DATA
Case: KBPM
5 µA
VF
1.0 V
Epoxy meets UL 94V-0 flammability rating
TJ max.
150 °C
Terminals: Silver plated leads, solderable per
J-STD-002 and JESD22-B102
E4 suffix for consumer grade
Polarity: As marked on body
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)
A
KBP
005M
KBP
01M
KBP
02M
KBP
04M
KBP
06M
KBP
08M
KBP
10M
PARAMETER
SYMBOL
UNIT
3N246 3N247 3N248 3N249 3N250 3N251 3N252
Maximum repetitive peak reverse voltage (1)
Maximum RMS voltage (1)
Maximum DC blocking voltage (1)
VRRM
VRMS
VDC
50
35
50
100
70
200
140
200
400
280
400
600
420
600
800
560
800
1000
700
V
V
V
100
1000
Maximum average forward output rectified
current at TA = 40 °C
IF(AV)
1.5
A
Peak forward surge current
single half sine-wave (1)
TA = 25 °C
TJ = 150 °C
60
40
IFSM
I2t
A
Rating for fusing (t < 8.3 ms)
10
A2s
°C
Operating junction and storage temperature range (1) TJ, TSTG
- 55 to + 150
Note:
(1) JEDEC registered values
Document Number: 88531
Revision: 15-Apr-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
KBP005M thru KBP10M, 3N246 thru 3N252
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise noted)
A
KBP
005M
KBP
01M
KBP
02M
KBP
04M
KBP
06M
KBP
08M
KBP
10M
TEST
CONDITIONS
PARAMETER
SYMBOL
UNIT
3N246 3N247 3N248 3N249 3N250 3N251 3N252
Maximum instantaneous forward
voltage drop per diode (1)
1.0 A
1.57 A
1.0
1.3
VF
V
Maximum DC reverse current
at rated DC blocking voltage
per diode (1)
TA = 25 °C
5.0
500
IR
µA
pF
TA = 125 °C
Typical junction capacitance
per diode
4.0 V, 1 MHz
CJ
15
Note:
(1) JEDEC registered values
THERMAL CHARACTERISTICS (T = 25 °C unless otherwise noted)
A
KBP
005M
KBP
01M
KBP
02M
KBP
04M
KBP
06M
KBP
08M
KBP
10M
PARAMETER
SYMBOL
UNIT
3N246 3N247 3N248 3N249 3N250 3N251 3N252
RθJA
RθJL
40
13
Typical thermal resistance (1)
°C/W
Note:
(1) Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with, 0.47 x 0.47" (12 x 12 mm) copper pads
ORDERING INFORMATION (Example)
PREFERRED P/N
KBP06M-E4/45
KBP06M-E4/51
3N250-E4/45
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
Tube
1.895
45
51
45
51
30
600
30
1.895
Anti-static PVC tray
Tube
1.895
3N250-E4/51
1.895
600
Anti-static PVC tray
RATINGS AND CHARACTERISTICS CURVES
(T = 25 °C unless otherwise noted)
A
1.6
60
50
40
30
20
10
0
60 Hz Resistive or
Inductive Load
Single Half Sine-Wave
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
P. C. B. M o unted on
0.47 x 0.47" (12 x 12 mm)
Copper Pads
T
A = 25 °C
TJ = 150 °C
Capacitive Load
5.0
10
20
Ipk
=
IAV
1.0 Cycle
(per leg)
20
40
60
80
100
120
140 150
1
10
Number of Cycles at 60 Hz
100
Ambient Temperature (°C)
Figure 1. Derating Curve Output Rectified Current
Figure 2. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
www.vishay.com
2
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88531
Revision: 15-Apr-08
KBP005M thru KBP10M, 3N246 thru 3N252
Vishay General Semiconductor
100
10
100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
TJ = 25 °C
Pulse Width = 300 µs
1 % Duty Cycle
10
1
0.1
1
0.1
0.01
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1
10
100
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Figure 3. Typical Forward Characteristics Per Diode
Figure 5. Typical Junction Capacitance Per Diode
10
TJ = 125 °C
1
0.1
TJ = 100 °C
TJ = 25 °C
0.01
0
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Figure 4. Typical Reverse Leakage Characteristics Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Case Style KBPM
0.600 (15.24)
0.560 (14.22)
0.125 x 45°
(3.2)
0.460 (11.68)
0.420 (10.67)
0.500 (12.70)
0.460 (11.68)
0.60
(15.2)
0.50 (12.7) MIN.
MIN.
0.060
(1.52)
0.034 (0.86)
0.028 (0.76)
DIA.
0.160 (4.1)
0.140 (3.6)
0.105 (2.67)
0.085 (2.16)
0.200 (5.08)
0.180 (4.57)
Polarity shown on front side of case: positive lead by beveled corner
Document Number: 88531
Revision: 15-Apr-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1
相关型号:
3N247-1-E4
DIODE 1.5 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE, PLASTIC, KBPM, 4 PIN, Bridge Rectifier Diode
VISHAY
3N247-E4
DIODE 1.5 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE, LEAD FREE, PLASTIC, CASE KBPM, 4 PIN, Bridge Rectifier Diode
VISHAY
3N247/72
Bridge Rectifier Diode, 1 Phase, 1.5A, 100V V(RRM), Silicon, LEAD FREE, PLASTIC, CASE KBPM, 4 PIN
VISHAY
3N247E4
DIODE 1.5 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE, LEAD FREE, PLASTIC, CASE KBPM, 4 PIN, Bridge Rectifier Diode
VISHAY
3N248-1
Bridge Rectifier Diode, 1 Phase, 1.5A, 200V V(RRM), Silicon, PLASTIC, CASE KBPM, 4 PIN
VISHAY
3N248-1-E4
DIODE 1.5 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE, PLASTIC, KBPM, 4 PIN, Bridge Rectifier Diode
VISHAY
©2020 ICPDF网 联系我们和版权申明