3KBP02M/1 [VISHAY]

Bridge Rectifier Diode, 3A, 200V V(RRM),;
3KBP02M/1
型号: 3KBP02M/1
厂家: VISHAY    VISHAY
描述:

Bridge Rectifier Diode, 3A, 200V V(RRM),

二极管
文件: 总2页 (文件大小:69K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
3KBP005M thru 3KBP08M  
New Product  
Vishay Semiconductors  
formerly General Semiconductor  
Glass Passivated Single-Phase  
Bridge Rectifier  
Reverse Voltage 50 to 800 V  
Forward Current 3.0 A  
Case Style KBPM  
0.600 (15.24)  
0.560 (14.22)  
Features  
• Plastic package has Underwriters Laboratory  
Flammability Classification 94V-0  
0.125 x 45o  
(3.2)  
• This series is UL listed under Recognized Component  
Index, file number E54214  
• Typical IR less than 0.1µA  
0.460 (11.68)  
0.420 (10.67)  
0.500 (12.70)  
0.460 (11.68)  
• High case dielectric strength  
• Ideal for printed circuit boards  
• High temperature soldering guaranteed:  
260°C/10 seconds at 5 lbs. (2.3kg) tension  
Dimensions in  
inches and  
(millimeters)  
60  
(15.2)  
MIN.  
0.50 (12.7) Min.  
Mechanical Data  
Case: Molded plastic body over passivated junctions  
Terminals: Plated leads solderable per MIL-STD-750,  
Method 2026  
0.060  
(1.52)  
0.034 (0.86)  
0.028 (0.76)  
DIA.  
0.160 (4.1)  
0.140 (3.6)  
Polarity: Polarity symbols marked on case  
Mounting Position: Any  
Weight: 0.06 oz., 1.7 g  
0.105 (2.67)  
0.085 (2.16)  
0.200 (5.08)  
0.180 (4.57)  
Packaging codes/options:  
1/600 EA. per Bulk Tray Stack  
Polarity shown on front side of case: positive lead by beveled corner  
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.  
3KBP  
Symbols 005M  
3KBP  
01M  
3KBP  
02M  
3KBP  
04M  
3KBP  
06M  
3KBP  
08M  
Parameter  
Units  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
V
V
V
Maximum DC blocking voltage  
100  
Maximum average forward output rectified  
current at TA=55°C (Fig. 1)  
IF(AV)  
3.0  
A
Peak forward surge current 50Hz single  
half sine-wave superimposed on rated load  
IFSM  
I2t  
80  
32  
A
Rating for fusing (t <10ms)  
Typical thermal resistance per leg (1)  
A2sec  
°C/W  
°C  
RΘJA  
RΘJL  
30  
11  
Operating junction and storage temperature range TJ, TSTG  
-55 to +150  
Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified.  
Maximum instantaneous forward voltage drop  
per leg at 3.0A  
1.05  
VF  
V
Maximum DC reverse current  
at rated DC blocking voltage per leg TA=125°C  
TA=25°C  
5.0  
500  
IR  
µA  
Typical junction capacitance per leg at 4.0V, 1MHZ  
CJ  
25  
pF  
Notes: (1) Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with, 0.47 x 0.47" (12 x12mm) copper pads  
Document Number 88888  
22-Apr-04  
www.vishay.com  
1
3KBP005M thru 3KBP08M  
Vishay Semiconductors  
formerly General Semiconductor  
New Product  
Ratings and  
Characteristic Curves (TA = 25°C unless otherwise noted)  
Fig. 1 – Forward Current  
Fig. 2 – Maximum Non-Repetitive  
Derating Curve  
Peak Forward Surge Current Per Leg  
4
100  
80  
60 HZ Resistive or  
Heat Sink Mounting:  
Induction Load  
3.0 x 3.0 x 0.11” Thick  
(7.5 x 7.5 x 0.3cm) Al. Plate  
3
WITH HEAT SINK  
60  
40  
2
WITHOUT HEAT SINK  
1
20  
0
0
1
10  
100  
160  
0
20  
40  
60  
80  
100  
120  
140  
TA - Ambient Temperature (°C)  
Number of Cycles at 60 HZ  
Fig. 3 – Typical Forward  
Characteristics Per Leg  
Fig. 4 – Typical Reverse Leakage  
Characteristics Per Leg  
100  
10  
TJ = 150°C  
Tj = 150°C  
10  
1
1
TJ = 125°C  
Tj = 125°C  
Tj = 25°C  
0.1  
0.1  
TJ = 25°C  
0.01  
0.01  
10 20  
30  
40  
50  
60  
70  
80  
90 100  
0.4  
0.5  
0.6  
0.8  
0.9  
1.0  
1.1  
1.2  
0.7  
Instantaneous Forward Voltage (V)  
Percent of Rated Peak Reverse Voltage (%)  
Fig. 5 – Typical Junction  
Capacitance Per Leg  
100  
T = 25°C  
J
f = 1.0MHZ  
Vsig = 50mVp-p  
10  
1
0.1  
1
10  
100  
Reverse Voltage (V)  
www.vishay.com  
2
Document Number 88888  
22-Apr-04  

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