3KASMC18HE3/57T [VISHAY]
Trans Voltage Suppressor Diode, 3000W, 18V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AB, ROHS COMPLIANT, PLASTIC, SMC, 2 PIN;型号: | 3KASMC18HE3/57T |
厂家: | VISHAY |
描述: | Trans Voltage Suppressor Diode, 3000W, 18V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AB, ROHS COMPLIANT, PLASTIC, SMC, 2 PIN 局域网 光电二极管 |
文件: | 总5页 (文件大小:414K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
New Product
3KASMC10A thru 3KASMC43A
www.vishay.com
Vishay General Semiconductor
Surface Mount PAR® Transient Voltage Suppressors
High Temperature Stability and High Reliability Conditions
FEATURES
• Junction passivation optimized design
passivated anisotropic rectifier technology
• TJ = 185 °C capability suitable for high
reliability and automotive requirement
• Available in uni-directional polarity only
• 3000 W peak pulse power capability with a 10/1000 μs
waveform
• Excellent clamping capability
• Very fast response time
• Low incremental surge resistance
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
DO-214AB (SMC)
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFET, signal lines of sensor units for consumer,
computer, industrial, automotive, and telecommunication.
PRIMARY CHARACTERISTICS
VWM
10 V to 43 V
VBR
PPPM
11.1 V to 52.8 V
3000 W
MECHANICAL DATA
Case: DO-214AB (SMC)
PD
6.0 W
Molding compound meets UL 94 V-0 flammability rating
Base P/NHM3 - RoHS-compliant and AEC-Q101 qualified
Base P/NHM3_X - RoHS-compliant and AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B, .....)
IFSM
200 A
TJ max.
Polarity
Package
185 °C
Uni-directional
DO-214AB (SMC)
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
HM3 suffix meets JESD 201 class 2 whisker test
Polarity: Color band denotes cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
PPPM
IPPM
VALUE
3000
UNIT
W
Peak pulse power dissipation with a 10/1000 μs waveform (1) (fig. 3)
Peak power pulse current with a 10/1000 μs waveform (1) (fig. 1)
Peak forward surge current 8.3 ms single half sine-wave (2)
Power dissipation on infinite heatsink, TL = 75 °C (fig. 6)
Maximum instantaneous forward voltage at 100 A (2)
Operating junction and storage temperature range
See next table
200
A
IFSM
A
PD
6.0
W
VF
3.5
V
TJ, TSTG
- 65 to + 185
°C
Notes
(1)
Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2.
Measured on 8.3 ms single half sine-wave, or equivalent square wave, duty cycle = 4 pulses per minute maximum
(2)
Revision: 05-Mar-13
Document Number: 89962
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
3KASMC10A thru 3KASMC43A
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
BREAKDOWN
MAXIMUM
REVERSE
LEAKAGE
AT VWM
MAXIMUM
MAXIMUM
MAXIMUM
VOLTAGE
TEST
STAND-OFF
DEVICE
MARKING
CODE
REVERSE
LEAKAGE
AT VWM
PEAK PULSE CLAMPING
(1)
DEVICE TYPE
V
BR AT IT
(V)
CURRENT VOLTAGE
SURGE
VOLTAGEAT
IPPM
IT
(mA)
VWM
(V)
CURRENT
ID (μA)
IR (μA)
I
PPM (A) (2)
VC (V)
MIN.
MAX.
TJ = 150 °C
3KASMC10A
3KASMC11A
3KASMC12A
3KASMC13A
3KASMC14A
3KASMC15A
3KASMC16A
3KASMC17A
3KASMC18A
3KASMC20A
3KASMC22A
3KASMC24A
3KASMC26A
3KASMC28A
3KASMC30A
3KASMC33A
3KASMC36A
3KASMC40A
3KASMC43A
3AX
3AZ
3BE
3BG
3BK
3BM
3BP
3BR
3BT
3BV
3BX
3BZ
3CE
3CG
3CK
3CM
3CP
3CR
3CT
11.1
12.2
13.3
14.4
15.6
16.7
17.8
18.9
20.0
22.2
24.4
26.7
28.9
31.1
33.3
36.7
40.0
44.4
47.8
12.3
13.5
14.7
15.9
17.2
18.5
19.7
20.9
22.1
24.5
26.9
29.5
31.9
34.4
36.8
40.6
44.2
49.1
52.8
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
10
11
12
13
14
15
16
17
18
20
22
24
26
28
30
33
36
40
43
5.0
5.0
2.0
2.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
50
50
20
20
10
10
10
10
10
10
10
10
10
10
15
15
20
20
20
177
165
151
140
129
123
115
109
103
92.6
84.5
77.1
71.3
66.1
62.0
56.3
51.6
46.5
43.2
17.0
18.2
19.9
21.5
23.2
24.4
26.0
27.6
29.2
32.4
35.5
38.9
42.1
45.4
48.4
53.3
58.1
64.5
69.4
Notes
(1)
(2)
(3)
Pulse test: tp 50 ms
Surge current waveform per fig. 3 and derate per fig. 2
All terms and symbols are consistent with ANSI/IEEE C62.35
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance, junction to ambient air (1)
SYMBOL
VALUE
77.5
UNIT
RJA
°C/ W
Typical thermal resistance, junction to leads
RJL
18.3
Note
(1)
Mounted on minimum recommended pad layout
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY
DELIVERY MODE
3KASMC10AHM3/57T (1)
3KASMC10AHM3/9AT (1)
3KASMC10AHM3_A/H (1)
3KASMC10AHM3_A/I (1)
0.211
0.211
0.211
0.211
57T
9AT
H
850
3500
850
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
I
3500
Note
(1)
AEC-Q101 qualified
Revision: 05-Mar-13
Document Number: 89962
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
3KASMC10A thru 3KASMC43A
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
100
10
10 000
Measured at
Zero Bias
1000
Measured at
Stand-Off Voltage
1
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
0.1
0.1
100
1
10
100
1000
10 000
10
20
30
40
50
VWM - Reverse Stand-off Voltage (V)
td - Pulse Width (µs)
Fig. 1 - Peak Pulse Power Rating Curve
Fig. 4 - Typical Junction Capacitance
200
100
75
TJ = TJ max.
8.3 ms Single Half Sine-Wave
100
50
50
25
10
0
1
5
10
50
100
50
TJ - Initial Temperature (°C)
0
100
150
200
Number of Cycles at 60 Hz
Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature
Fig. 5 - Maximum Non-Repetitive/Peak Forward Surge Current
150
6
TJ = 25 °C
Pulse Width (td)
60 Hz
tr = 10 µs
Resistive or
Inductive Load
is defined as the Point
where the Peak Current
decays to 50 % of IPPM
5
Peak Value
IPPM
100
50
0
4
3
2
1
0
Half Value -
IPPM
IPP
2
10/1000 µs Waveform
as defined by R.E.A.
td
75
150
175
1.0
3.0
4.0
25
50
100 125
0
2.0
200
0
t - Time (ms)
TL - Lead Temperature (°C)
Fig. 3 - Pulse Waveform
Fig. 6 - Power Derating Curve
Revision: 05-Mar-13
Document Number: 89962
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
3KASMC10A thru 3KASMC43A
www.vishay.com
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-214AB (SMC)
Cathode Band
Mounting Pad Layout
0.185 (4.69) MAX.
0.246 (6.22)
0.220 (5.59)
0.126 (3.20)
0.114 (2.90)
0.126 (3.20) MIN.
0.280 (7.11)
0.260 (6.60)
0.060 (1.52) MIN.
0.012 (0.305)
0.006 (0.152)
0.320 (8.13) REF.
0.103 (2.62)
0.079 (2.06)
0.060 (1.52)
0.030 (0.76)
0.008 (0.2)
0 (0)
0.320 (8.13)
0.305 (7.75)
Revision: 05-Mar-13
Document Number: 89962
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
Document Number: 91000
1
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