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2N6661B-2 [VISHAY]

Power Field-Effect Transistor, 0.9A I(D), 90V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AD, TO-39, 3PIN;

2N6661B-2


元器件型号：	2N6661B-2
生产厂家：	VISHAY TELEFUNKEN
描述和应用：	Power Field-Effect Transistor, 0.9A I(D), 90V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AD, TO-39, 3PIN 脉冲晶体管
PDF文件：	总2页 (文件大小：45K)
下载文档：	下载PDF数据表文档文件
型号参数：2N6661B-2参数

2N6661CSM4

N-CHANNEL ENHANCEMENT MODE MOSFET

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17 SEME-LAB

2N6661DCSM

DUAL N–CHANNEL ENHANCEMENT MODE

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10 SEME-LAB

2N6661JANTX

N-Channel 90 V (D-S) MOSFET

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17 VISHAY

2N6661JANTXV

N-Channel 90 V (D-S) MOSFET

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23 VISHAY

2N6661JTVP02

19500/547 JANTXV2N6661P WITH PIND

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0 VISHAY

2N6661M1A

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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14 SEME-LAB

2N6661N2

2N6661N2

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1 MICROCHIP

2N6666

NPN SILICON TRANSISTOR

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10 CENTRAL

2N6666

NPN SILICON TRANSISTOR

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44 CENTRAL

2N6666

POWER TRANSISTORS(65W)

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18 MOSPEC

2N6666

PLASTIC MEDIUM-POWER SILICON TRANSISTORS

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30 BOCA

2N6666

isc Silicon PNP Darlington Power Transistor

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13 ISC

2N6666

Power Bipolar Transistor, 8A I(C), 40V V(BR)CEO, PNP, Silicon, TO-220, Plastic/Epoxy, 2 Pin,

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0 MICROSEMI

2N6666-6200

8A, 40V, PNP, Si, POWER TRANSISTOR, TO-220AB

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0 RENESAS

2N6666-DR6260

8A, 40V, PNP, Si, POWER TRANSISTOR, TO-220AB

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0 RENESAS

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