2N5912-E3 [VISHAY]

Small Signal Field-Effect Transistor, N-Channel, Junction FET;
2N5912-E3
元器件型号: 2N5912-E3
生产厂家: VISHAY TELEFUNKEN    VISHAY TELEFUNKEN
描述和应用:

Small Signal Field-Effect Transistor, N-Channel, Junction FET

PDF文件: 总7页 (文件大小:77K)
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型号参数:2N5912-E3参数

2N5912X

Small Signal Field-Effect Transistor, 2-Element, N-Channel, Silicon, Junction FET, DIE

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0 CALOGIC

2N5913

SI NPN POWER BJT

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21 NJSEMI

2N5916

TRANSISTOR | BJT | NPN | 24V V(BR)CEO | 200MA I(C) | STX-6

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36 ETC

2N5918

TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 750MA I(C) | STX-6

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33 ETC

2N5926

TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 50A I(C) | TO-210AE

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31 ETC

2N5927

TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 100A I(C) | TO-114

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21 ETC

2N5928

TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 100A I(C) | TO-114

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41 ETC

2N5928

SILICON NPN TRANSISTOR

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68 NJSEMI

2N5929

TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 30A I(C) | TO-3VAR

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13 ETC

2N5929

Bipolar NPN Device in a Hermetically sealed TO3

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22 SEME-LAB

2N593

BIDIRECTIONAL TRANSISTOR

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20 NJSEMI

2N5930

Bipolar NPN Device in a Hermetically sealed TO3 Metal Package

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16 SEME-LAB

2N5930

Bipolar NPN Device in a Hermetically sealed TO3 Metal Package

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16 SEME-LAB

2N5930

Power Bipolar Transistor, 30A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin

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0 MICROSEMI

2N5931

TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 30A I(C) | TO-3VAR

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19 ETC