2N5486-TR3 [VISHAY]
Transistor;
| 型号： | 2N5486-TR3 |
| 厂家： | 
VISHAY |
| 描述： | Transistor |
| 文件： | 总8页 (文件大小：103K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2N/SST5484 Series
Vishay Siliconix
N-Channel JFETs
2N5484
2N5485
2N5486
SST5484
SST5485
SST5486
PRODUCT SUMMARY
Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA)
2N/SST5484
2N/SST5485
2N/SST5486
−0.3 to −3
−0.5 to −4
−2 to −6
−25
−25
−25
3
3.5
4
1
4
8
FEATURES
BENEFITS
APPLICATIONS
D Excellent High-Frequency Gain:
D Wideband High Gain
D High-Frequency Amplifier/Mixer
D Oscillator
Gps 13 dB (typ) @ 400 MHz − 5485/6
D Very High System Sensitivity
D High Quality of Amplification
D Very Low Noise: 2.5 dB (typ) @
D Sample-and-Hold
400 MHz − 5485/6
D High-Speed Switching Capability
D High Low-Level Signal Amplification
D Very Low Capacitance Switches
D Very Low Distortion
D High AC/DC Switch Off-Isolation
DESCRIPTION
The 2N/SST5484 series consists of n-channel JFETs
designed to provide high-performance amplification,
especially at high frequencies up to and beyond 400 MHz.
The 2N series, TO-226AA (TO-92), and SST series, TO-236
(SOT-23), packages provide low-cost options and are
available with tape-and-reel to support automated assembly
(see Packaging Information).
TO-236
(SOT-23
)
TO-226AA
(TO-92)
1
D
D
S
1
2
3
G
S
2
3
G
Top View
SST5484 (H4)*
SST5485 (H5)*
SST5486 (H6)*
Top View
2N5484
2N5485
2N5486
*Marking Code for TO-236
For applications information see AN102 and AN105.
Document Number: 70246
S-50148—Rev. G, 24-Jan-05
www.vishay.com
1
2N/SST5484 Series
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −25 V
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 mA
Lead Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300_C
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to 150_C
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to 150_C
a
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW
Notes
a. Derate 2.8 mW/_C above 25_C
SPECIFICATIONS FOR 2N SERIES (T = 25_C UNLESS OTHERWISE NOTED)
A
Limits
2N5484
2N5485
2N5486
Parameter
Symbol
Test Conditions
Typa Min Max Min Max Min Max Unit
Static
Gate-Source
Breakdown Voltage
V
I
G
= −1 ꢀA , V = 0 V
−35
−25
−25
−25
(BR)GSS
DS
V
Gate-Source Cutoff Voltage
V
V
= 15 V, I = 10 nA
−0.3
−3
5
−0.5
−4
10
−2
−6
20
GS(off)
DS
D
b
Saturation Drain Current
I
V
= 15 V, V = 0 V
1
4
8
mA
nA
DSS
DS
GS
V
= −20 V, V = 0 V
−0.002
−0.2
−1
−1
−1
GS
DS
Gate Reverse Current
I
GSS
T
= 100_C
−200
−200
−200
A
c
Gate Operating Current
I
G
V
= 10 V, I = 1 mA
−20
pA
V
DG
D
Gate-Source
V
I
G
= 10 mA , V = 0 V
0.8
GS(F)
DS
c
Forward Voltage
Dynamic
Common-Source
g
3
6
50
5
3.5
7
60
5
4
8
75
5
mS
fs
NO TAG
Forward Transconductance
V
= 15 V, V = 0 V
GS
DS
f = 1 kHz
Common-Source
Output Conductance
g
ꢀS
os
iss
NO TAG
Common-Source
Input Capacitance
C
C
2.2
0.7
1
Common-Source
Reverse Transfer Capacitance
V
V
= 15 V, V = 0 V
GS
f = 1 MHz
DS
DS
1
1
1
pF
rss
Common-Source
Output Capacitance
C
oss
2
2
2
Equivalent Input
= 15 V, V = 0 V
GS
f = 100 Hz
nV⁄
√Hz
e
10
n
c
Noise Voltage
High-Frequency
f = 100 MHz
5.5
5.5
45
2.5
Common-Source
Y
mS
ꢀS
fs(RE)
d
Transconductance
f = 400 MHz
f = 100 MHz
f = 400 MHz
f = 100 MHz
f = 400 MHz
3
3.5
75
Common-Source
Output Conductance
V
V
= 15 V
= 0 V
DS
GS
Y
os(RE)
d
V
65
100
1
100
1
0.05
0.8
0.1
Common-Source
Input Conductance
Y
mS
is(RE)
d
V
= 15 V, I = 1 mA
f = 100 MHz
DS
D
20
16
25
d
Common-Source Power Gain
G
ps
f = 100 MHz
f = 400 MHz
21
13
18
10
30
20
18
10
30
20
= 15 V
= 4 mA
DS
I
D
V
= 15 V, V = 0 V
GS
DS
G
0.3
2
2.5
3
2.5
2.5
dB
R
= 1 Mꢁ , f = 1 kHz
V
= 15 V, I = 1 mA
DS
D
d
R
G
= 1 kꢁ , f = 100 MHz
Noise Figure
NF
V
D
R
= 15 V
f = 100 MHz
f = 400 MHz
1
2
4
2
4
DS
I
= 4 mA
2.5
= 1 kꢁ
G
Document Number: 70246
S-50148—Rev. G, 24-Jan-05
www.vishay.com
2
2N/SST5484 Series
Vishay Siliconix
SPECIFICATIONS FOR SST SERIES (T = 25_C UNLESS OTHERWISE NOTED)
A
Limits
SST5484
SST5485
SST5486
Parameter
Symbol
Test Conditions
Typb Min Max Min Max Min Max Unit
Static
Gate-Source
Breakdown Voltage
V
I
G
= −1 ꢀA , V = 0 V
−35
−25
−25
−25
(BR)GSS
DS
V
Gate-Source Cutoff Voltage
V
V
= 15 V, I = 10 nA
DS D
−0.3
−3
5
−0.5
−4
10
−2
−6
20
GS(off)
b
Saturation Drain Current
I
V
= 15 V, V = 0 V
DS GS
1
8
mA
nA
4
DSS
V
= −20 V, V = 0 V
−0.002
−0.2
−1
−1
−1
GS
DS
Gate Reverse Current
I
GSS
T
= 100_C
−200
−200
−200
A
c
Gate Operating Current
I
G
V
= 10 V, I = 1 mA
−20
pA
V
DG
D
Gate-Source
V
I
G
= 10 mA , V = 0 V
0.8
GS(F)
DS
c
Forward Voltage
Dynamic
Common-Source
g
3
6
3.5
7
4
8
mS
fs
NO TAG
Forward Transconductance
V
= 15 V, V = 0 V
GS
DS
f = 1 kHz
Common-Source
Output Conductance
g
50
60
75
ꢀ
S
os
iss
NO TAG
Common-Source
Input Capacitance
C
C
2.2
0.7
Common-Source
Reverse Transfer
Capacitance
V
V
= 15 V, V = 0 V
GS
f = 1 MHz
DS
DS
pF
rss
Common-Source
Output Capacitance
C
oss
1
Equivalent Input
= 15 V, V = 0 V
GS
f = 100 Hz
nV⁄
√Hz
e
10
n
c
Noise Voltage
High-Frequency
f = 100 MHz
5.5
5.5
45
Common-Source
Transconductance
Y
mS
ꢀS
fs
f = 400 MHz
f = 100 MHz
f = 400 MHz
f = 100 MHz
f = 400 MHz
Common-Source
Output Conductance
V
V
= 15 V
= 0 V
DS
GS
Y
os
V
65
0.05
0.8
Common-Source
Input Conductance
Y
mS
is
V
= 15 V, I = 1 mA
f = 100 MHz
DS
D
20
Common-Source
Power Gain
G
ps
f = 100 MHz
f = 400 MHz
21
13
= 15 V
= 4 mA
DS
I
D
V
= 15 V, V = 0 V
GS
DS
G
0.3
2
dB
R
= 1 Mꢁ , f = 1 kHz
V
= 15 V, I = 1 mA
DS
D
R
G
= 1 kꢁ , f = 100 MHz
Noise Figure
Notes
NF
V
D
R
= 15 V
f = 100 MHz
f = 400 MHz
1
DS
I
= 4 mA
2.5
= 1 kꢁ
G
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
b. Pulse test: PW v300 ꢀs duty cycle v3%.
NH
c. This parameter not registered with JEDEC.
d. Not a production test.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 70246
S-50148—Rev. G, 24-Jan-05
www.vishay.com
3
2N/SST5484 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (T = 25_C UNLESS OTHERWISE NOTED)
A
Drain Current and Transconductance
vs. Gate-Source Cutoff Voltage
On-Resistance and Output Conductance
vs. Gate-Source Cutoff Voltage
10
8
100
80
20
16
500
400
r
DS @ ID = 300 ꢀA, VGS = 0 V
os
g
@ VDS = 10 V, VGS = 0 V
IDSS
f = 1 kHz
rDS
6
4
60
40
g
fs
12
8
300
200
g
os
IDSS @ V = 10 V, VGS = 0 V
DS
2
0
20
0
4
0
100
0
g
@ V = 10 V, VGS = 0 V
DS
fs
f = 1 kHz
0
−2
−4
−6
−8
−10
0
−2
−4
−6
−8
−10
V
GS(off) − Gate-Source Cutoff Voltage (V)
V
GS(off) − Gate-Source Cutoff Voltage (V)
Common-Source Forward
Transconductance vs. Drain Current
Gate Leakage Current
10
8
100 nA
10 nA
I
D
= 5 mA
VGS(off) = −3 V
VDS = 10 V
f = 1 kHz
1 mA
0.1 mA
T
= 125_C
1 nA
100 pA
10 pA
1 pA
A
T
A
= −55_C
125_C
6
4
2
0
IGSS
125_C
@
ID = 5 mA
25_C
1 mA
0.1 mA
T
A
= 25_C
IGSS @ 25_C
0.1 pA
0.1
1
10
0
4
8
12
16
20
V
DG − Drain-Gate Voltage (V)
I − Drain Current (mA)
D
Output Characteristics
Output Characteristics
10
8
15
12
VGS(off) = −2 V
VGS(off) = −3 V
VGS = 0 V
V
= 0 V
GS
−0.3 V
−0.2 V
−0.4 V
−0.6 V
6
4
9
6
−0.6 V
−0.9 V
−1.2 V
−1.5 V
−0.8 V
−1.0 V
−1.2 V
2
0
3
0
−1.8 V
−1.4 V
8
0
2
4
6
10
0
2
4
6
8
10
V
DS − Drain-Source Voltage (V)
VDS − Drain-Source Voltage (V)
Document Number: 70246
S-50148—Rev. G, 24-Jan-05
www.vishay.com
4
2N/SST5484 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (T = 25_C UNLESS OTHERWISE NOTED)
A
Transfer Characteristics
Transfer Characteristics
10
8
10
8
VGS(off) = −2 V
VDS = 10 V
V
= −3 V
V
= 10 V
DS
GS(off)
T
A
= −55_C
T
= −55_C
A
25_C
25_C
6
4
6
4
125_C
125_C
2
0
2
0
0
−0.4
−0.8
−1.2
−1.6
−2
0
−0.6
−1.2
−1.8
−2.4
−3
V
GS − Gate-Source Voltage (V)
V
− Gate-Source Voltage (V)
GS
Transconductance vs. Gate-Source Voltage
Transconductance vs. Gate-Source Voltage
10
8
10
8
VGS(off) = −2 V
VDS = 10 V
f = 1 kHz
VGS(off) = −3 V
VDS = 10 V
f = 1 kHz
T
= −55_C
A
T
= −55_C
A
6
4
6
4
25_C
25_C
125_C
125_C
2
0
2
0
0
−0.4
−0.8
−1.2
−1.6
−2
0
−0.6
−1.2
−1.8
−2.4
−3
V
GS − Gate-Source Voltage (V)
V
GS − Gate-Source Voltage (V)
On-Resistance vs. Drain Current
Circuit Voltage Gain vs. Drain Current
300
240
100
80
g
R
L
fs
T
A
= 25_C
A
+
V
1 ) R g
os
L
Assume VDD = 15 V, V = 5 V
DS
10 V
+
VGS(off) = −2 V
R
I
L
D
180
120
60
40
−3 V
V
= −2 V
GS(off)
60
0
20
0
−3 V
0.1
1
10
0.1
1
10
ID − Drain Current (mA)
ID − Drain Current (mA)
Document Number: 70246
S-50148—Rev. G, 24-Jan-05
www.vishay.com
5
2N/SST5484 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (T = 25_C UNLESS OTHERWISE NOTED)
A
Common-Source Input Capacitance
vs. Gate-Source Voltage
Common-Source Reverse Feedback
Capacitance vs. Gate-Source Voltage
5
4
3
f = 1 MHz
f = 1 MHz
2.4
3
2
1.8
1.2
VDS = 0 V
VDS = 0 V
10 V
10 V
1
0
0.6
0
0
−4
−8
−12
−16
−20
0
−4
−8
−12
−16
−20
V
GS − Gate-Source Voltage (V)
V
GS − Gate-Source Voltage (V)
Input Admittance
Forward Admittance
100
10
100
10
T
V
V
= 25_C
T
V
V
= 25_C
A
A
DS = 15 V
GS = 0 V
DS = 15 V
GS = 0 V
Common Source
Common Source
b
is
g
fs
g
is
−b
fs
1
1
0.1
0.1
100
1000
100
200
500
1000
200
500
f − Frequency (MHz)
f − Frequency (MHz)
Reverse Admittance
Output Admittance
10
10
T
V
V
= 25_C
DS = 15 V
GS = 0 V
T
V
V
= 25_C
DS = 15 V
GS = 0 V
A
A
b
os
−b
rs
Common Source
Common Source
1
1
−g
rs
0.1
0.1
g
os
0.01
0.01
100
1000
100
1000
200
500
200
500
f − Frequency (MHz)
f − Frequency (MHz)
Document Number: 70246
S-50148—Rev. G, 24-Jan-05
www.vishay.com
6
2N/SST5484 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (T = 25_C UNLESS OTHERWISE NOTED)
A
Equivalent Input Noise Voltage vs. Frequency
Output Conductance vs. Drain Current
20
16
20
16
V
= −3 V
V
= 10 V
DS
GS(off)
V
= −3 V
V
= 10 V
DS
GS(off)
f = 1 kHz
T
A
= −55_C
12
8
12
8
25_C
125_C
I
D
= 5 mA
10 k
4
0
4
0
I
D
= I
DSS
10
100
1 k
f − Frequency (Hz)
100 k
0.1
1
10
I
D
− Drain Current (mA)
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and
Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see
http://www.vishay.com/ppg?70246.
Document Number: 70246
S-50148—Rev. G, 24-Jan-05
www.vishay.com
7
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1
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