2N4401 [VISHAY]
SMALL SIGNAL TRANSISTORS NPN; 小信号晶体管NPN
| 型号： | 2N4401 |
| 厂家： | 
VISHAY |
| 描述： | SMALL SIGNAL TRANSISTORS NPN |
| 文件： | 总3页 (文件大小：113K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ADVANCED INFORMATION
ADVANCED INFORMATION
2N4401
SMALL SIGNAL TRANSISTORS (NPN)
TO-92
FEATURES
¨ NPN Silicon Epitaxial Planar Transistor
0.142 (3.6)
0.181 (4.6)
for switching and amplifier applications.
¨ As complementary type, the PNP
transistor 2N4403 is recommended.
¨ On special request, this transistor is
also manufactured in the pin
configuration TO-18.
¨ This transistor is also available in the
SOT-23 case with the type designation
MMBT4401
max.Æ 0.022 (0.55)
0.098 (2.5)
E
C
B
MECHANICAL DATA
Case: TO-92 Plastic Package
Weight: approx. 0.18g
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND THERMAL CHARACTERISTICS
Ratings at 25¡C ambient temperature unless otherwise specified
SYMBOL
VCBO
VCEO
VEBO
IC
VALUE
60
UNIT
Volts
Volts
Volts
mA
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
40
6.0
Collector Current-Continuous
600
Power Dissipation at TA=25°C
Derate above 25°C
625
5.0
mW
mW/°C
Ptot
Ptot
Power Dissipation at TC=25°C
Derate above 25°C
1.5
12
W
mW/°C
Thermal Resistance, Junction to Ambient Air
Thermal Resistance Junction to Case
Junction Temperature
RQJA
RQJC
Tj
200
83.3
°C/W
¡C/W
¡C
150
Storage Temperature Range
TS
Ð55 to +150
¡C
2/17/99
2N4401
ELECTRICAL CHARACTERISTICS
Ratings at 25¡C ambient temperature unless otherwise specified
SYMBOL
MIN.
MAX.
UNIT
Collector-Base Breakdown Voltage
at IC = 0.1 mA, IE = 0
V(BR)CBO
60
Ð
Volts
Collector-Emitter Breakdown Voltage(1)
at IC = 1 mA, IB = 0
V(BR)CEO
V(BR)EBO
40
Ð
Ð
Volts
Volts
Emitter-Base Breakdown Voltage
at IE = 0.1 mA, IC = 0
6.0
Collector-Emitter Saturation Voltage(1)
at IC = 150 mA, IB = 15 mA
at IC = 500 mA, IB = 50 mA
VCEsat
VCEsat
Ð
Ð
0.40
0.75
Volts
Volts
Base-Emitter Saturation Voltage(1)
at IC = 150 mA, IB = 15 mA
at IC = 500 mA, IB = 50 mA
VBEsat
VBEsat
0.75
Ð
0.95
1.20
Volts
Volts
Collector Cutoff Current
at VEB = 0.4 V, VCE = 35 V
ICEX
IBEV
Ð
Ð
100
100
nA
nA
Base Cutoff Current
at VEB = 0.4 V, VCE = 35 V
DC Current Gain
at VCE = 1 V, IC = 0.1 mA
at VCE = 1 V, IC = 1 mA
at VCE = 1 V, IC = 10 mA
at VCE = 1 V, IC = 150 mA(1)
at VCE = 2 V, IC = 500 mA(1)
hFE
hFE
hFE
hFE
hFE
20
40
80
100
40
Ð
Ð
Ð
300
Ð
Ð
Ð
Ð
Ð
Ð
Input Impedance
at VCE = 10 V, IC = 1 mA, f = 1 kHz
hie
hre
1.0
15
8 ¥ 10-4
Ð
kW
Ð
Voltage Feedback Ratio
at VCE = 10 V, IC = 1 mA, f = 1 kHz
0.1 ¥ 10-4
Current Gain-Bandwidth Product
at VCE = 10 V, IC = 20 mA, f = 100 MHz
fT
250
Ð
MHz
pF
Collector-Base Capacitance
at VCB = 5 V, IE=0, f=1.0 MHZ
CCBO
CEBO
6.5
Emitter-Base Capacitance
at VEB = 0.5 V, IC=0, f=1.0 MHZ
Ð
30
pF
NOTES
(1) Pulse test: Pulse width ² 300ms - Duty cycle ² 2%
2N4401
ELECTRICAL CHARACTERISTICS
Ratings at 25¡C ambient temperature unless otherwise specified
SYMBOL
MIN.
MAX.
UNIT
Small Signal Current Gain
at VCE = 10 V, IC = 1 mA, f = 1 kHz
hfe
40
500
Ð
Output Admittance
at VCE = 10 V, IC = 1 mA, f = 1 kHz
hoe
td
tr
1.0
Ð
30
15
mS
ns
ns
ns
ns
Delay Time (see fig. 1)
at IC = 150 mA, IB1 = 15 mA, VCC=30V, VBE=2.0V
Rise Time (see fig. 1)
at IC = 150 mA, IB1 = 15 mA, VCC=30V, VBE=2.0V
Ð
20
Storage Time (see fig. 2)
at IB1 = IB2 = 15 mA, VCC=30V, IC=150mA
ts
Ð
225
30
Fall Time (see fig. 2)
at IB1 = IB2 = 15 mA, VCC=30V, IC=150mA
tf
Ð
SWITCHING TIME EQUIVALENT TEST CIRCUIT
FIGURE 1 - TURN-ON TIME
FIGURE 2 - TURN-OFF TIME
+30V
+30V
1.0 to 100 ms, DUTY CYCLE Å 2%
1.0 to 100 ms, DUTY CYCLE Å 2%
200W
200W
+16 V
+16 V
0
0
1kW
CS* < 10 pF
1kW
CS* < 10 pF
-2 V
-14 V
Scope rise time < 4ns
*Total shunt capacitance of test jig,
connectors and oscilloscope
< 2 ns
< 20 ns
-4 V
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