2N4126 [VISHAY]

Small Signal Transistors (PNP); 小信号晶体管( PNP )
2N4126
型号: 2N4126
厂家: VISHAY    VISHAY
描述:

Small Signal Transistors (PNP)
小信号晶体管( PNP )

晶体 晶体管
文件: 总5页 (文件大小:230K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
2N4126  
Small Signal Transistors (PNP)  
TO-92  
FEATURES  
.142 (3.6)  
.181 (4.6)  
PNP Silicon Epitaxial Transistor  
for switching and amplifier applications.  
Especially suit-able for AF-driver and  
low-power output stages.  
As complementary type, the NPN tran-  
sistor 2N4124 is recommended.  
.
.022 (0.55)  
.098 (2.5)  
max  
C
E
MECHANICAL DATA  
Case: TO-92 Plastic Package  
Weight: approx. 0.18 g  
B
Dimensions in inches and (millimeters)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at  
ambient temperature unless otherwise specified  
25 °C  
Symbol  
Value  
Unit  
V
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current  
–V  
–V  
–V  
25  
CEO  
CBO  
EBO  
25  
V
4
V
–I  
–I  
–I  
P
200  
mA  
mA  
mA  
mW  
°C  
°C  
C
Peak Collector Current  
Base Current  
800  
CM  
B
50  
Power Dissipation at T  
= 25 °C  
6251)  
150  
amb  
tot  
Junction Temperature  
T
T
j
Storage Temperature Range  
–65 to +150  
S
1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case.  
4/98  
2N4126  
ELECTRICAL CHARACTERISTICS  
Ratings at  
ambient temperature unless otherwise specified  
25 °C  
Symbol  
Min.  
Typ.  
Max.  
Unit  
DC Current Gain  
at V = –1 V, I = 2.0 mA  
h
h
120  
60  
360  
CE  
C
FE  
FE  
at V = –1 V, I = 50 mA  
CE  
C
Collector Cutoff Current  
–I  
50  
50  
0.4  
0.95  
nA  
nA  
V
CBO  
EBO  
at V = –20 V  
CB  
Emitter Cutoff Current  
–I  
at V = –3 V  
EB  
Collector Saturation Voltage  
–V  
–V  
CESAT  
BESAT  
at I = –50 mA, I = –5 mA  
C
B
Base Saturation Voltage  
at I = –50 mA, I = –5 mA  
V
C
B
Collector-Emitter Breakdown Voltage  
–V  
–V  
–V  
25  
25  
4
V
(BR)CEO  
(BR)CBO  
(BR)EBO  
at I = –1 mA  
C
Collector-Base Breakdown Voltage  
V
at I = –10 µA  
C
Emitter-Base Breakdown Voltage  
V
at I = –10 µA  
E
Gain-Bandwidth Product  
f
200  
12  
MHz  
pF  
K/W  
T
at V = –5 V, I = 10 mA, f = 50 MHz  
CE  
C
Collector-Base Capacitance  
C
R
CBO  
at V = –10 V, f = 1 MHz  
CB  
Thermal Resistance Junction to Ambient Air  
2001)  
thJA  
1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case.  
RATINGS AND CHARACTERISTIC CURVES 2N4126  
RATINGS AND CHARACTERISTIC CURVES 2N4126  
RATINGS AND CHARACTERISTIC CURVES 2N4126  

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