2N4126 [VISHAY]
Small Signal Transistors (PNP); 小信号晶体管( PNP )![2N4126](http://pdffile.icpdf.com/pdf1/p00068/img/icpdf/2N4126_357614_icpdf.jpg)
型号: | 2N4126 |
厂家: | ![]() |
描述: | Small Signal Transistors (PNP) |
文件: | 总5页 (文件大小:230K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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2N4126
Small Signal Transistors (PNP)
TO-92
FEATURES
.142 (3.6)
.181 (4.6)
♦
♦
PNP Silicon Epitaxial Transistor
for switching and amplifier applications.
Especially suit-able for AF-driver and
low-power output stages.
As complementary type, the NPN tran-
sistor 2N4124 is recommended.
.
.022 (0.55)
.098 (2.5)
max
C
E
MECHANICAL DATA
Case: TO-92 Plastic Package
Weight: approx. 0.18 g
B
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at
ambient temperature unless otherwise specified
25 °C
Symbol
Value
Unit
V
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
–V
–V
–V
25
CEO
CBO
EBO
25
V
4
V
–I
–I
–I
P
200
mA
mA
mA
mW
°C
°C
C
Peak Collector Current
Base Current
800
CM
B
50
Power Dissipation at T
= 25 °C
6251)
150
amb
tot
Junction Temperature
T
T
j
Storage Temperature Range
–65 to +150
S
1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case.
4/98
2N4126
ELECTRICAL CHARACTERISTICS
Ratings at
ambient temperature unless otherwise specified
25 °C
Symbol
Min.
Typ.
Max.
Unit
DC Current Gain
at V = –1 V, I = –2.0 mA
h
h
120
–
–
60
360
–
–
–
CE
C
FE
FE
at V = –1 V, I = –50 mA
CE
C
Collector Cutoff Current
–I
–
–
50
50
0.4
0.95
–
nA
nA
V
CBO
EBO
at V = –20 V
CB
Emitter Cutoff Current
–I
–
–
at V = –3 V
EB
Collector Saturation Voltage
–V
–V
–
–
CESAT
BESAT
at I = –50 mA, I = –5 mA
C
B
Base Saturation Voltage
at I = –50 mA, I = –5 mA
–
–
V
C
B
Collector-Emitter Breakdown Voltage
–V
–V
–V
25
25
4
–
V
(BR)CEO
(BR)CBO
(BR)EBO
at I = –1 mA
C
Collector-Base Breakdown Voltage
–
–
V
at I = –10 µA
C
Emitter-Base Breakdown Voltage
–
–
V
at I = –10 µA
E
Gain-Bandwidth Product
f
–
200
12
–
–
MHz
pF
K/W
T
at V = –5 V, I = –10 mA, f = 50 MHz
CE
C
Collector-Base Capacitance
C
R
–
–
CBO
at V = –10 V, f = 1 MHz
CB
Thermal Resistance Junction to Ambient Air
–
2001)
thJA
1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case.
RATINGS AND CHARACTERISTIC CURVES 2N4126
RATINGS AND CHARACTERISTIC CURVES 2N4126
RATINGS AND CHARACTERISTIC CURVES 2N4126
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