2N4124 [VISHAY]
Small Signal Transistors (NPN); 小信号晶体管( NPN )型号: | 2N4124 |
厂家: | VISHAY |
描述: | Small Signal Transistors (NPN) |
文件: | 总5页 (文件大小:212K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
2N4124
Small Signal Transistors (NPN)
TO-92
FEATURES
.142 (3.6)
.181 (4.6)
NPN Silicon Epitaxial Transistor
for switching and amplifier applications.
♦
♦
♦
Especially suitable for AF-driver and
low-power output stages.
As complementary type, the PNP
transistor 2N4126 is recommended.
.
.022 (0.55)
.098 (2.5)
max
C
E
MECHANICAL DATA
Case: TO-92 Plastic Package
Weight: approx. 0.18 g
B
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at
ambient temperature unless otherwise specified
25 °C
Symbol
Value
Unit
V
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
V
CEO
V
CBO
V
EBO
25
30
V
5
V
I
I
I
200
mA
mA
mA
mW
°C
°C
C
Peak Collector Current
Base Current
800
CM
B
50
Power Dissipation at T
= 25 °C
P
6251)
150
amb
tot
Junction Temperature
T
j
Storage Temperature Range
T
–65 to +150
S
1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case.
4/98
2N4124
ELECTRICAL CHARACTERISTICS
Ratings at
ambient temperature unless otherwise specified
25 °C
Symbol
Min.
Typ.
Max.
Unit
DC Current Gain
at V = 1 V, I = 2.0 mA
h
h
120
–
–
60
360
–
–
–
CE
C
FE
FE
at V = 1 V, I = 50 mA
CE
C
Collector-Base Cutoff Current
I
–
–
50
50
0.3
0.95
–
nA
nA
V
CBO
at V = 20 V
CB
Emitter-Base Cutoff Current
I
–
–
EBO
at V = 3 V
EB
Collector Saturation Voltage
V
V
V
V
V
–
–
CESAT
at I = 50 mA, I = 5 mA
C
B
Base Saturation Voltage
at I = 50 mA, I = 5 mA
–
–
V
BESAT
C
B
Collector-Emitter Breakdown Voltage
25
30
5
–
V
(BR)CEO
(BR)CBO
(BR)EBO
at I = 1 mA
C
Collector-Base Breakdown Voltage
–
–
V
at I = 10 µA
C
Emitter-Base Breakdown Voltage
–
–
V
at I = 10 µA
E
Gain-Bandwidth Product
f
–
200
12
–
–
MHz
pF
K/W
T
at V = 5 V, I = 10 mA, f = 50 MHz
CE
C
Collector-Base Capacitance
C
R
–
–
CBO
thJA
at V = 10 V, f = 1 MHz
CB
Thermal Resistance Junction to Ambient Air
–
2001)
1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case
RATINGS AND CHARACTERISTIC CURVES 2N4124
RATINGS AND CHARACTERISTIC CURVES 2N4124
RATINGS AND CHARACTERISTIC CURVES 2N4124
相关型号:
2N4124-18
Small Signal Bipolar Transistor, 0.2A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon
MOTOROLA
2N4124-18F
Small Signal Bipolar Transistor, 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92-18F, 3 PIN
CENTRAL
2N4124-18R
Small Signal Bipolar Transistor, 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92-18R, 3 PIN
CENTRAL
2N4124-5F
Small Signal Bipolar Transistor, 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92-5F, 3 PIN
CENTRAL
2N4124-5T
Small Signal Bipolar Transistor, 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92-5T, 3 PIN
CENTRAL
2N4124-5T1
Small Signal Bipolar Transistor, 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92-5T1, 3 PIN
CENTRAL
©2020 ICPDF网 联系我们和版权申明