2N3906 [VISHAY]
SMALL SIGNAL TRANSISTORS PNP; 小信号晶体管PNP
| 型号： | 2N3906 |
| 厂家： | 
VISHAY |
| 描述： | SMALL SIGNAL TRANSISTORS PNP |
| 文件： | 总3页 (文件大小：116K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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2N3906
SMALL SIGNAL TRANSISTORS (PNP)
FEATURES
TO-92
0.142 (3.6)
0.181 (4.6)
¨ PNP Silicon Epitaxial Planar Transistor for
switching and amplifier applications.
¨ As complementary type, the NPN transistor
2N3904 is recommended.
¨ On special request, this transistor is also
manufactured in the pin configuration
TO-18.
¨ This transistor is also available in the SOT-23 case with
0.022 (0.55)
max.Æ
the type designation MMBT3906.
0.098 (2.5)
E
C
MECHANICAL DATA
Case: TO-92 Plastic Package
Weight: approx. 0.18g
B
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25¡C ambient temperature unless otherwise specified
SYMBOL
ÐVCBO
ÐVCEO
ÐVEBO
ÐIC
VALUE
40
UNIT
Volts
Volts
Volts
mA
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
40
5.0
200
Power Dissipation at TA = 25¡C
at TC = 25¡C
Ptot
625
1.5
mW
Watts
Thermal Resistance Junction to Ambient Air
Junction Temperature
RqJA
Tj
250(1)
150
¡C/W
¡C
Storage Temperature Range
TS
Ð 65 to +150
¡C
NOTES:
(1) Valid provided that leads are kept at ambient temperature.
1/5/99
2N3906
ELECTRICAL CHARACTERISTICS
Ratings at 25¡C ambient temperature unless otherwise specified
SYMBOL
MIN.
MAX.
UNIT
Collector-Base Breakdown Voltage
at ÐIC = 10 mA, IE = 0
ÐV(BR)CBO
40
Ð
Volts
Collector-Emitter Breakdown Voltage
at ÐIC = 1 mA, IB = 0
ÐV(BR)CEO
40
5
Ð
Ð
Volts
Volts
Emitter-Base Breakdown Voltage
at ÐIE = 10 mA, IC = 0
ÐV(BR)EBO
Collector Saturation Voltage
at ÐIC = 10 mA, ÐIB = 1 mA
at ÐIC = 50 mA, ÐIB = 5 mA
ÐVCEsat
ÐVCEsat
Ð
Ð
0.25
0.4
Volts
Volts
Base Saturation Voltage
at ÐIC = 10 mA, ÐIB = 1 mA
at ÐIC = 50 mA, ÐIB = 5 mA
ÐVBEsat
ÐVBEsat
Ð
Ð
0.85
0.95
Volts
Volts
Collector-Emitter Cutoff Current
at ÐVEB = 3 V, ÐVCE = 30 V
ÐICEV
Ð
Ð
50
50
nA
nA
Emitter-Base Cutoff Current
at ÐVEB = 3 V, ÐVCE = 30 V
ÐIEBV
DC Current Gain
at ÐVCE = 1 V, ÐIC = 0.1 mA
at ÐVCE = 1 V, ÐIC = 1 mA
at ÐVCE = 1 V, ÐIC = 10 mA
at ÐVCE = 1 V, ÐIC = 50 mA
at ÐVCE = 1 V, ÐIC = 100 mA
hFE
hFE
hFE
hFE
hFE
60
80
100
60
Ð
Ð
300
Ð
Ð
Ð
Ð
Ð
Ð
30
Ð
Input Impedance
at ÐVCE = 10 V, ÐIC = 1 mA, f = 1 kHz
hie
1
10
kW
Voltage Feedback Ratio
at ÐVCE = 10 V, ÐIC = 1 mA, f = 1 kHz
hre
0.5 á 10Ð4
8 á 10Ð4
Ð
MHz
pF
Gain-Bandwidth Product
at ÐVCE = 20 V, ÐIC = 10 mA, f = 100 MHz
fT
250
Ð
Ð
Collector-Base Capacitance
at ÐVCB = 5 V, f = 100 kHz
CCBO
4.5
10
Emitter-Base Capacitance
at ÐVEB = 0.5 V, f = 100 kHz
CEBO
Ð
pF
2N3906
ELECTRICAL CHARACTERISTICS
Ratings at 25¡C ambient temperature unless otherwise specified
SYMBOL
MIN.
MAX.
UNIT
Small Signal Current Gain
at ÐVCE = 10 V, ÐIC = 1 mA, f = 1 kHz
hfe
100
400
Ð
Output Admittance
at ÐVCE = 1 V, ÐIC = 1 mA, f = 1 kHz
hoe
1
40
mS
Noise Figure
at ÐVCE = 5 V, ÐIC = 100 mA, RG = 1 kW,
f = 10 É 15000 Hz
NF
td
tr
Ð
Ð
Ð
Ð
Ð
4
35
dB
ns
ns
ns
ns
Delay Time (see Fig. 1)
at ÐIB1 = 1 mA, ÐIC = 10 mA
Rise Time (see Fig. 1)
at ÐIB1 = 1 mA, ÐIC = 10 mA
35
Storage Time (see Fig. 2)
at IB1 = ÐIB2 = 1 mA, ÐIC = 10 mA
ts
225
75
Fall Time (see Fig. 2)
at IB1 = ÐIB2 = 1 mA, ÐIC = 10 mA
tf
Fig. 1: Test circuit for delay and rise time
* total shunt capacitance of test jig and connectors
Fig. 2: Test circuit for storage and fall time
* total shunt capacitance of test jig and connectors
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