25FR10 [VISHAY]
Standard Recovery Diodes(Stud Version), 25 A; 标准恢复二极管(梭哈版) , 25 A型号: | 25FR10 |
厂家: | VISHAY |
描述: | Standard Recovery Diodes(Stud Version), 25 A |
文件: | 总6页 (文件大小:137K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
25F(R) Series
Vishay High Power Products
Standard Recovery Diodes
(Stud Version), 25 A
FEATURES
• High surge current capability
RoHS
• Stud cathode and stud anode version
• Wide current range
COMPLIANT
• Types up to 1200 V VRRM
• RoHS compliant
TYPICAL APPLICATIONS
• Battery charges
DO-203AA (DO-4)
• Converters
PRODUCT SUMMARY
• Power supplies
IF(AV)
25 A
• Machine tool controls
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
VALUES
25
UNITS
A
°C
A
IF(AV)
TC
120
IF(RMS)
40
50 Hz
60 Hz
50 Hz
60 Hz
Range
356
IFSM
A
373
636
I2t
A2s
580
VRRM
TJ
100 to 1200
- 65 to 175
V
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
V
RRM, MAXIMUM
VRSM, MAXIMUM
NON-REPETITIVE
PEAK VOLTAGE
V
VR(BR), MINIMUM
AVALANCHE
VOLTAGE
V (1)
IRRM MAXIMUM
AT TJ = 175 °C
mA
TYPE
NUMBER
VOLTAGE
CODE
REPETITIVE PEAK
REVERSE VOLTAGE
V
10
20
40
60
80
100
200
400
600
800
150
275
500
725
950
-
-
500
750
950
25F(R)
12
100
120
1000
1200
1200
1400
1150
1350
Note
(1)
Avalanche version only available from VRRM 400 V to 1200 V
Document Number: 93506
Revision: 29-Sep-08
For technical questions, contact: ind-modules@vishay.com
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1
25F(R) Series
Standard Recovery Diodes
(Stud Version), 25 A
Vishay High Power Products
FORWARD CONDUCTION
PARAMETER
SYMBOL
IF(AV)
TEST CONDITIONS
VALUES
UNITS
25
A
Maximum average forward current
at case temperature
180° conduction, half sine wave
120
40
°C
A
Maximum RMS forward current
IF(RMS)
Maximum on-repetitive peak
reverse power
(1)
PR
10 µs square pulse, TJ = TJ maximum
10
K/W
t = 10 ms
t = 8.3 ms
t = 10 ms
356
373
300
No voltage
reapplied
Maximum peak, one-cycle forward,
non-repetitive surge current
IFSM
A
100 % VRRM
reapplied
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
314
636
Sinusoidal half wave,
initial TJ = TJ maximum
No voltage
reapplied
580
Maximum I2t for fusing
I2t
A2s
450
100 % VRRM
reapplied
410
Maximum I2√t for fusing
I2√t
t = 0.1 to 10 ms, no voltage reapplied
(16.7 % x π x IF(AV) < I < π x IF(AV)), TJ = TJ maximum
(I > π x IF(AV)), TJ = TJ maximum
6360
0.80
0.90
A2√s
Low level value of threshold voltage
High level value of threshold voltage
VF(TO)1
VF(TO)2
V
Low level value of forward
slope resistance
rf1
(16.7 % x π x IF(AV) < I < π x IF(AV)), TJ = TJ maximum
6.80
mΩ
High level value of forward
slope resistance
rf2
(I > π x IF(AV)), TJ = TJ maximum
5.70
1.30
Maximum forward voltage drop
VFM
Ipk = 78 A, TJ = 25 °C, tp = 400 µs rectangular wave
V
Note
(1)
Available only for avalanche version, all other parameters the same as 25F
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
- 65 to 175
- 65 to 200
1.5
UNITS
Maximum junction operating
temperature range
TJ
°C
Maximum storage temperature range
TStg
Maximum thermal resistance,
junction to case
RthJC
DC operation
K/W
Maximum thermal resistance,
case to heatsink
RthCS
Mounting surface, smooth, flat and greased
Not lubricated threads
0.5
1.5 + 0 - 10 %
(13)
N · m
(lbf · in)
Allowable mounting torque
1.2 + 0 - 10 %
(10)
N · m
(lbf · in)
Lubricated threads
7
g
Approximate weight
Case style
0.25
oz.
See dimensions - link at the end of datasheet
DO-203AA (DO-4)
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For technical questions, contact: ind-modules@vishay.com
Document Number: 93506
Revision: 29-Sep-08
25F(R) Series
Standard Recovery Diodes
(Stud Version), 25 A
Vishay High Power Products
ΔRthJC CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
TEST CONDITIONS
UNITS
180°
120°
90°
0.28
0.39
0.50
0.73
1.20
0.24
0.41
0.54
0.75
1.21
TJ = TJ maximum
K/W
60°
30°
Note
• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
180
170
160
150
140
130
120
110
100
180
170
160
150
140
130
120
110
100
25F(R) Series
(DC) = 1.5 K/W
25F(R) Series
(DC) = 1.5 K/W
R
R
thJC
thJC
Conduction Period
Conduction Angle
90°
90°
60°
120°
180°
60° 120°
30°
180°
DC
30°
0
5
10
15
20
25
30
0
5
10 15 20 25 30 35 40 45
Average Forward Current (A)
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
35
180°
2
3
t
h
K
K
S
A
/
120°
W
/
W
30
90°
60°
30°
25
20
15
10
5
RMS Limit
8
K
/
W
Conduction Angle
25F(R) Series
T = 175°C
J
0
0
5
10
15
20
25
300 25 50 75 100 125 150 175
Maximum Allowable Ambient Temperature (°C)
Average Forward Current (A)
Fig. 3 - Forward Power Loss Characteristics
Document Number: 93506
Revision: 29-Sep-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
3
25F(R) Series
Standard Recovery Diodes
(Stud Version), 25 A
Vishay High Power Products
25
DC
180°
120°
20
90°
60°
30°
RMS Limit
15
1
0
K
/
W
10
5
Conduction Period
16F(R) Series
T = 175°C
J
0
0
5
10
15
20
25
300
25
50
75
100
Maximum Allowable Ambient Temperature (°C)
Average Forward Current (A)
Fig. 4 - Forward Power Loss Characteristics
1000
100
10
350
300
250
200
150
100
50
At Any Rated Load Condition And With
Rated V
Applied Following Surge.
RRM
Initial T = 175°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
T = 25°C
J
T = 175°C
J
25F(R) Series
25F(R) Series
1
0
0.5
1
1.5
2
2.5
3
3.5
4
1
10
100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Instantaneous Forward Voltage (V)
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 7 - Forward Voltage Drop Characteristics
400
10
Maximum Non Repetitive Surge Current
Steady State Value
Versus Pulse Train Duration.
350
R
= 1.5 K/W
thJC
(DC Operation)
Initial T = 175°C
J
No Voltage Reapplied
300
Rated V
Reapplied
RRM
250
200
150
100
50
1
25F(R) Series
1
25F(R) Series
0.1
0
0.01
0.1
0.001
1
10
0.01
0.1
10
Square Wave Pulse Duration (s)
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 8 - Thermal Impedance ZthJC Characteristics
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For technical questions, contact: ind-modules@vishay.com
Document Number: 93506
Revision: 29-Sep-08
25F(R) Series
Standard Recovery Diodes
(Stud Version), 25 A
Vishay High Power Products
ORDERING INFORMATION TABLE
Device code
25
F
R
120
M
1
2
3
4
5
1
2
3
-
-
-
Current rating: Code = IF(AV)
F = Standard device
None = Stud normal polarity (cathode to stud)
R = Stud reverse polarity (anode to stud)
4
5
-
-
Voltage code x 10 = VRRM (see Voltage Ratings table)
None = Stud base DO-203AA (DO-4) 10-32UNF-2A
M = Stud base DO-203AA (DO-4) M5 X 0.8
(not available for avalanche diodes)
LINKS TO RELATED DOCUMENTS
Dimensions
http://www.vishay.com/doc?95311
Document Number: 93506
Revision: 29-Sep-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
5
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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