20ETS12PBF [VISHAY]
High Voltage Input Rectifier Diode, 20 A; 高电压输入整流二极管， 20 A
| 型号： | 20ETS12PBF |
| 厂家： | 
VISHAY |
| 描述： | High Voltage Input Rectifier Diode, 20 A |
| 文件： | 总9页 (文件大小：228K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VS-20ETS..PbF, VS-20ATS..PbF
www.vishay.com
Vishay Semiconductors
High Voltage Input Rectifier Diode, 20 A
FEATURES
TO-220AC
TO-220AB
• Designed
and
qualified
according
to
JEDEC-JESD47
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
Base
• Typical applications are in input rectification and these
products are designed to be used with Vishay HPP
switches and output rectifiers which are available in
identical package outlines
Cathode to
base
cathode
2
2
DESCRIPTION
1
3
1
Anode
3
Cathode
Anode
Anode
The VS-20ETS..PbF, VS-20ATS..PbF rectifier high voltage
series has been optimized for very low forward voltage drop,
with moderate leakage. The glass passivation technology
used has reliable operation up to 150 °C junction
temperature.
VS-20ETS..PbF
VS-20ATS..PbF
PRODUCT SUMMARY
Package
TO-220AC, TO-220AB
IF(AV)
20 A
800 V to 1200 V
1.1 V
VR
VF at IF
IFSM
300 A
TJ max.
Diode variation
150 °C
Single die, common anode
OUTPUT CURRENT IN TYPICAL APPLICATIONS
APPLICATIONS
SINGLE-PHASE BRIDGE
THREE-PHASE BRIDGE
UNITS
Capacitive input filter TA = 55 °C, TJ = 125 °C
common heatsink of 1 °C/W
16.3
21
A
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
IF(AV)
VRRM
IFSM
CHARACTERISTICS
VALUES
20
UNITS
Sinusoidal waveform
A
V
800/1200
300
A
VF
10 A, TJ = 25 °C
1.0
V
TJ
- 40 to 150
°C
VOLTAGE RATINGS
VRRM, MAXIMUM
PEAK REVERSE VOLTAGE
V
VRSM,MAXIMUMNON-REPETITIVE
IRRM
AT 150 °C
mA
PART NUMBER
PEAK REVERSE VOLTAGE
V
VS-20ETS08PbF,
VS-20ATS08PbF
800
900
1
VS-20ETS12PbF,
VS-20ATS12PbF
1200
1300
Revision: 18-Aug-11
Document Number: 94341
1
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-20ETS..PbF, VS-20ATS..PbF
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ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
20
UNITS
Maximum average forward current
IF(AV)
TC = 105 °C, 180° conduction half sine wave
10 ms sine pulse, rated VRRM applied
10 ms sine pulse, no voltage reapplied
10 ms sine pulse, rated VRRM applied
10 ms sine pulse, no voltage reapplied
t = 0.1 ms to 10 ms, no voltage reapplied
250
A
Maximum peak one cycle
non-repetitive surge current
IFSM
300
316
Maximum I2t for fusing
I2t
A2s
442
Maximum I2t for fusing
I2t
4420
A2s
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
VFM
TEST CONDITIONS
VALUES
1.1
UNITS
V
Maximum forward voltage drop
Forward slope resistance
Threshold voltage
20 A, TJ = 25 °C
rt
10.4
0.85
0.1
m
V
TJ = 150 °C
TJ = 25 °C
VF(TO)
Maximum reverse leakage current
IRM
V
R = Rated VRRM
mA
TJ = 150 °C
1.0
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum junction and storage
temperature range
TJ, TStg
- 40 to 150
°C
Maximum thermal resistance,
junction to case
RthJC
RthCS
DC operation
1.3
0.5
°C/W
Typical thermal resistance,
case to heatsink
Mounting surface, smooth and greased
2
g
Approximate weight
Mounting torque
0.07
oz.
minimum
maximum
6 (5)
kgf · cm
(lbf · in)
12 (10)
20ETS08
Case style TO-220AC
Case style TO-220AB
20ETS12
20ATS08
20ATS12
Marking device
Revision: 18-Aug-11
Document Number: 94341
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-20ETS..PbF, VS-20ATS..PbF
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Vishay Semiconductors
150
140
130
120
110
100
90
35
DC
180°
120°
90°
60°
30°
RthJC (DC) = 1.3 °C/W
30
25
20
15
10
5
Ø
Conduction angle
RMS limit
Ø
Conduction period
60°
90°
120°
30°
TJ = 150 °C
180°
0
20
22
0
5
10
15
20
25
0
2
4
6
8
10 12 14 16 18
Average Forward Current (A)
Average Forward Current (A)
Fig. 1 - Current Rating Characteristics
Fig. 4 - Forward Power Loss Characteristics
300
150
At any rated load condition and with
rated VRRM applied following surge.
RthJC (DC) = 1.3 °C/W
140
130
120
110
100
90
Initial TJ = 150 °C
250
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
Ø
200
150
100
50
Conduction period
30°
60°
90°
15
120°
180°
DC
1
10
100
0
5
10
20
25
30
35
Number of Equal Amplitude
Half Cycle Current Pulse (N)
Average Forward Current (A)
Fig. 2 - Current Rating Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
30
300
Maximum non-repetitive surge current
versus pulse train duration.
Initial TJ = 150 °C
180°
120°
90°
60°
30°
25
20
15
10
5
250
200
No voltage reapplied
Rated VRRM reapplied
RMS limit
150
Ø
Conduction angle
100
50
TJ = 150 °C
0
0.1
0.01
1
0
4
8
12
16
20
24
Pulse Train Duration (s)
Average Forward Current (A)
Fig. 3 - Forward Power Loss Characteristics
Fig. 6 - Maximum Non-Repetitive Surge Current
Revision: 18-Aug-11
Document Number: 94341
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-20ETS..PbF, VS-20ATS..PbF
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Vishay Semiconductors
1000
100
10
TJ = 25 °C
TJ = 150 °C
1
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Instantaneous Forward Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
10
Steady state value
(DC operation)
1
0.1
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
Single pulse
0.01
0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance ZthJC Characteristics
Revision: 18-Aug-11
Document Number: 94341
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-20ETS..PbF, VS-20ATS..PbF
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Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
20
E
T
S
12 PbF
1
2
3
4
5
6
7
1
-
-
-
Vishay Semiconductors product
Current rating (20 = 20 A)
Circuit configuration:
E = TO-220AC
2
3
A = TO-220AB
4
5
-
-
Package:
T = TO-220
Type of silicon:
S = Standard recovery rectifier
Voltage code x 100 = VRRM
08 = 800 V
12 = 1200 V
6
7
-
-
PbF = Lead (Pb)-free
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95180
www.vishay.com/doc?95181
Part marking information
Revision: 18-Aug-11
Document Number: 94341
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
TO-220AB, TO-220AC
DIMENSIONS FOR TO-220AB in millimeters and inches
B
A
Seating plane
Ø P
A
A1
E
4
E
Thermal pad
A
Q
H1
H1
D2
D
θ
Detail B
D1
(2)
L1
1
2
3
E1
(3)
D
D
C
C
C
View A - A
L
A
C
Sheet 2
A2
2 x e
0.015 B A
M
M
C
e1
1
2
3
D
D
Lead assignments
HEXFET
Diodes
b, b2
C
C
1. - Gate
2. - Drain
3. - Source
1. - Anode/open
2. - Cathode
3. - Anode
c
c1
IGBTs, CoPAK
b1, b3
Section C - C and D - D
1. - Gate
2. - Collector
3. - Emitter
3 x b2
3 x b
Detail B
MILLIMETERS
INCHES
MIN.
MILLIMETERS
INCHES
SYMBOL
NOTES
SYMBOL
NOTES
MIN.
4.25
1.14
2.56
0.69
0.38
1.20
1.15
0.36
0.36
0.31
14.85
8.38
MAX.
4.65
1.40
2.92
1.01
0.96
1.73
1.73
0.61
0.56
1.14
15.25
9.02
MAX.
0.183
0.055
0.115
0.040
0.038
0.068
0.068
0.024
0.022
0.045
0.600
0.355
MIN.
12.19
10.11
8.38
2.41
4.88
6.09
13.52
3.32
3.54
2.60
MAX.
12.88
10.51
8.89
MIN.
0.480
0.398
0.330
0.095
0.192
0.240
0.532
0.131
0.139
0.102
MAX.
0.507
0.414
0.350
0.105
0.208
0.255
0.552
0.150
0.147
0.118
A
A1
A2
b
0.167
0.045
0.101
0.027
0.015
0.047
0.045
0.014
0.014
0.012
0.585
0.330
D2
E
3
E1
e
2.67
b1
b2
b3
c
c1
c2
D
4
e1
H1
L
5.28
6.48
14.02
3.82
3.73
L1
Ø P
Q
2
4
3
3.00
90° to 93°
90° to 93°
D1
Notes
(1)
(2)
(3)
Dimensioning and tolerancing per ASME Y14.5M-1994
Lead dimension and finish uncontrolled in L1
Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body
Dimension b1 and c1 apply to base metal only
Controlling dimensions: inches
(4)
(5)
Document Number: 95180
Revision: 25-Oct-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
Outline Dimensions
Vishay Semiconductors
TO-220AB, TO-220AC
DIMENSIONS FOR TO-220AC in millimeters and inches
B
A
(6)
E
Seating plane
E
Ø P
A
A
A1
Thermal pad
Q
(6) H1
H1
D2 (6)
D
Detail B
θ
D1
(2)
L1
1
2
3
L3
D
D
C
C
C
L4
E1 (6)
L
A
C
View A - A
A2
e1
M
M
0.015 B A
1
2
3
Plating
Base metal
b, b2
D
D
C
C
c
c1 (4)
b1, b3
(4)
2 x b2
2 x b
Section C - C and D - D
Detail B
MILLIMETERS
INCHES
MILLIMETERS
INCHES
MIN.
SYMBOL
NOTES
SYMBOL
NOTES
MIN.
4.25
1.14
2.56
0.69
0.38
1.20
1.15
0.36
0.36
14.85
8.38
12.19
MAX.
4.65
1.40
2.92
1.01
0.96
1.73
1.73
0.61
0.56
15.25
9.02
12.88
MIN.
0.167
0.045
0.101
0.027
0.015
0.047
0.045
0.014
0.014
0.585
0.330
0.480
MAX.
0.183
0.055
0.115
0.040
0.038
0.068
0.068
0.024
0.022
0.600
0.355
0.507
MIN.
10.11
8.38
2.41
4.88
6.09
13.52
3.32
1.78
0.76
3.54
2.60
MAX.
10.51
8.89
2.67
5.28
6.48
14.02
3.82
2.13
1.27
3.73
3.00
MAX.
0.414
0.350
0.105
0.208
0.255
0.552
0.150
0.084
0.050
0.147
0.188
A
A1
A2
b
E
E1
e
0.398
0.330
0.095
0.192
0.240
0.532
0.131
0.070
0.030
0.139
0.102
3, 6
6
e1
H1
L
b1
b2
b3
c
4
4
6
2
L1
L3
L4
Ø P
Q
c1
D
4
3
D1
D2
6
90° to 93°
90° to 93°
Notes
(1)
(2)
(3)
Dimensioning and tolerancing per ASME Y14.5M-1994
Lead dimension and finish uncontrolled in L1
Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body
(4)
(5)
(6)
(7)
Dimension b1, b3 and c1 apply to base metal only
Controlling dimensions: inches
Thermal pad contour optional within dimensions E, H1, D2 and E1
Outline conforms are derived from the actual package outline
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Document Number: 95180
Revision: 25-Oct-10
Outline Dimensions
Vishay Semiconductors
TO-220AC
DIMENSIONS in millimeters and inches
B
Seating
1
2
3
plane
(6)
A
D
D
E
A
Ø P
0.014 M B AM
A
L1
E
(7)
E2
C
C
A1
Thermal pad
Q
(6)
H1
H1
(7)
D2 (6)
2 x b2
2 x b
(6)
Detail B
D
Detail B
θ
D1
1
3
2
Lead tip
L3
L4
C
E1 (6)
Lead assignments
Diodes
L
1 + 2 - Cathode
3 - Anode
c
A
Conforms to JEDEC outline TO-220AC
View A - A
e1
A2
0.015 M B AM
MILLIMETERS
INCHES
MIN.
MILLIMETERS
INCHES
MIN.
SYMBOL
NOTES
SYMBOL
NOTES
MIN.
4.25
1.14
2.56
0.69
0.38
1.20
1.14
0.36
0.36
14.85
8.38
11.68
10.11
MAX.
4.65
1.40
2.92
1.01
0.97
1.73
1.73
0.61
0.56
15.25
9.02
12.88
10.51
MAX.
0.183
0.055
0.115
0.040
0.038
0.068
0.068
0.024
0.022
0.600
0.355
0.507
0.414
MIN.
6.86
-
MAX.
8.89
0.76
2.67
5.28
6.48
14.02
3.82
2.13
1.27
3.73
3.00
MAX.
0.350
0.030
0.105
0.208
0.255
0.552
0.150
0.084
0.050
0.147
0.118
A
A1
A2
b
0.167
0.045
0.101
0.027
0.015
0.047
0.045
0.014
0.014
0.585
0.330
0.460
0.398
E1
E2
e
0.270
-
6
7
2.41
4.88
6.09
13.52
3.32
1.78
0.76
3.54
2.60
0.095
0.192
0.240
0.532
0.131
0.070
0.030
0.139
0.102
e1
H1
L
b1
b2
b3
c
4
4
6, 7
2
L1
L3
L4
Ø P
Q
c1
D
4
3
2
D1
D2
E
6
90° to 93°
90° to 93°
3, 6
Notes
(1)
Dimensioning and tolerancing as per ASME Y14.5M-1994
Lead dimension and finish uncontrolled in L1
Dimension D, D1 and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured
at the outermost extremes of the plastic body
(2)
(3)
(4)
(5)
(6)
(7)
(8)
Dimension b1, b3 and c1 apply to base metal only
Controlling dimension: inches
Thermal pad contour optional within dimensions E, H1, D2 and E1
Dimension E2 x H1 define a zone where stamping and singulation irregularities are allowed
Outline conforms to JEDEC TO-220, D2 (minimum) where dimensions are derived from the actual package outline
Document Number: 95221
Revision: 07-Mar-11
For technical questions within your region, please contact one of the following:
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
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Document Number: 91000
Revision: 11-Mar-11
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