1N6383HE3_A/D [VISHAY]
TVS DIODE 10V 14.5V 1.5KE;
| 型号： | 1N6383HE3_A/D |
| 厂家： | 
VISHAY |
| 描述： | TVS DIODE 10V 14.5V 1.5KE 电视 |
| 文件： | 总5页 (文件大小：90K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
End of Life "August 2021" - Alternative Device: "1.5KE Series"
ICTE5 thru ICTE18C, 1N6373 thru 1N6386
www.vishay.com
Vishay General Semiconductor
®
TRANSZORB Transient Voltage Suppressors
FEATURES
• Glass passivated chip junction
• Available in uni-directional and bi-directional
• 1500 W peak pulse power capability with a
10/1000 μs waveform, repetitive rate (duty
cycle): 0.01 %
• Excellent clamping capability
• Very fast response time
• Low incremental surge resistance
Case Style 1.5KE
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
TYPICAL APPLICATIONS
VWM
5.0 V to 18 V
6.0 V to 21.2 V
9.2 V to 21.2 V
1500 W
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFET, signal lines of sensor units for consumer,
computer, industrial, and telecommunication.
V
BR (uni-directional)
V
BR (bi-directional)
PPPM
PD
6.5 W
MECHANICAL DATA
IFSM
200 A
Case: 1.5KE, molded epoxy body over passivated junction
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant and commercial grade
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified
(“X” denotes revision code e.g. A, B, ...)
TJ max.
Polarity
Package
175 °C
Uni-directional, bi-directional
1.5KE
DEVICES FOR BI-DIRECTION APPLICATIONS
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
For bi-directional types, use C suffix (e.g. ICTE18C).
Electrical characteristics apply in both directions.
Polarity: for uni-directional types the color band denotes
cathode end, no marking on bi-directional types
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
PPPM
IPPM
LIMIT
1500
UNIT
W
Peak pulse power dissipation with a 10/1000 μs waveform (1) (fig. 1)
Peak pulse current with a 10/1000 μs waveform (1) (fig. 3)
Power dissipation on infinite heatsink at TL = 75 °C (fig. 8)
Peak forward surge current 8.3 ms single half sine-wave uni-directional only (2)
Maximum instantaneous forward voltage at 100 A for uni-directional only
Operating junction and storage temperature range
See next table
6.5
A
PD
W
IFSM
200
A
VF
3.5
V
TJ, TSTG
-55 to +175
°C
Notes
(1)
Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2
8.3 ms single half sine-wave, duty cycle = 4 pulses per minute maximum
(2)
Revision: 01-Mar-2021
Document Number: 88356
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
End of Life "August 2021" - Alternative Device: "1.5KE Series"
ICTE5 thru ICTE18C, 1N6373 thru 1N6386
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (JEDEC® REGISTERED DATA) (TA = 25 °C unless otherwise noted)
BREAKDOWN
VOLTAGE
VBR AT 1.0 mA
(V)
MAXIMUM
REVERSE
LEAKAGE
AT VWM
MAXIMUM
CLAMPING
VOLTAGE
MAXIMUM
CLAMPING
VOLTAGE AT
MAXIMUM
PEAK
STAND-OFF
VOLTAGE
VWM
JEDEC®
TYPE
NUMBER
GENERAL
SEMICONDUCTOR
PART NUMBER
PULSE
AT IPP = 1.0 A
I
PP = 10 A
CURRENT
(V)
ID (μA)
V
C (V)
VC (V)
I
PP (A)
MIN.
UNI-DIRECTIONAL TYPES
1N6373 (2)
1N6374
1N6375
1N6376
1N6377
1N6378
ICTE5 (2)
5.0
8.0
6.0
9.4
300
25.0
2.0
7.1
7.5
160
100
90
ICTE8
ICTE10
ICTE12
ICTE15
ICTE18
11.3
13.7
16.1
20.1
24.2
11.5
14.1
16.5
20.6
25.2
10.0
12.0
15.0
18.0
11.7
14.1
17.6
21.2
2.0
70
2.0
60
2.0
50
BI-DIRECTIONAL TYPES
1N6382
1N6383
1N6384
1N6385
1N6386
ICTE8C
8.0
9.4
50
2.0
2.0
2.0
2.0
11.4
14.1
16.7
20.8
24.8
11.6
14.5
17.1
21.4
25.5
100
90
70
60
50
ICTE10C
ICTE12C
ICTE15C
ICTE18C
10.0
12.0
15.0
18.0
11.7
14.1
17.6
21.2
Notes
(1)
(2)
(3)
“C” suffix indicates bi-directional
ICTE5 and 1N6373 are not available as bi-directional
Clamping factor: 1.33 at full rated power; 1.20 at 50 % rated power; clamping factor: the ratio of the actual VC (clamping voltage) to the VBR
(breakdown voltage) as measured on a specific device
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
ICTE5-E3/54
ICTE5HE3_A/C (1)
0.968
54
C
1400
1400
13" diameter paper tape and reel
13" diameter paper tape and reel
0.968
Note
(1) AEC-Q101 qualified
Revision: 01-Mar-2021
Document Number: 88356
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
End of Life "August 2021" - Alternative Device: "1.5KE Series"
ICTE5 thru ICTE18C, 1N6373 thru 1N6386
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
100 000
100
Non-Repetitive Pulse
Measured at
Zero Bias
Waveform shown in Fig. 3
A = 25 °C
T
10 000
1000
100
10
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
Measured at Stand-Off
Voltage VWM
1
0.1
0.1 µs
1.0 µs
10 µs
100 µs
1.0 ms
10 ms
1.0
10
100
200
td - Pulse Width (s)
VBR - Breakdown Voltage (V)
Fig. 1 - Peak Pulse Power Rating Curve
Fig. 4 - Typical Junction Capacitance Uni-Directional
100
100 000
Measured at
Zero Bias
Bi-Directional Type
75
50
Non-Repetitive Pulse
Waveform shown in Fig. 3
TA = 25 °C
10 000
1000
100
25
0
Measured at Stand-Off
Voltage VWM
1.0
10
100
200
0
25
50
75
100
125
150 175
200
TJ - Initial Temperature (°C)
VBR - Breakdown Voltage (V)
Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature
Fig. 5 - Typical Junction Capacitance
150
200
TJ = 25 °C
Pulse Width (td)
TJ = TJ max.
tr = 10 µs
8.3 ms Single Half Sine-Wave
is defined as the Point
where the Peak Current
decays to 50 % of IPPM
Peak Value
100
50
IPPM
100
50
0
Half Value -
IPP
2
IPPM
10/1000 µs Waveform
as defined by R.E.A.
td
10
1.0
3.0
4.0
0
2.0
1
5
10
50
100
t - Time (ms)
Number of Cycles at 60 Hz
Fig. 3 - Pulse Waveform
Fig. 6 - Maximum Non-Repetitive Forward Surge Current
Uni-Directional Only
Revision: 01-Mar-2021
Document Number: 88356
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
End of Life "August 2021" - Alternative Device: "1.5KE Series"
ICTE5 thru ICTE18C, 1N6373 thru 1N6386
www.vishay.com
Vishay General Semiconductor
50
10
8.0
Uni-Directional Only
TA = 25 °C
7.0
6.0
5.0
4.0
3.0
L = 0.375" (9.5 mm)
Lead Lengths
2.0
1.0
0
1
28
6
8
10 12 14 16 18 20 22 24 26
0
25
50
75
100 125 150
175
200
VC - Clamping Voltage (V)
TL - Lead Temperature (°C)
Fig. 7 - Typical Characteristics Clamping Voltage
Fig. 8 - Power Derating Curve
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Case Style 1.5KE
1.0 (25.4)
MIN.
0.210 (5.3)
0.190 (4.8)
DIA.
0.375 (9.5)
0.285 (7.2)
1.0 (25.4)
MIN.
0.042 (1.07)
0.038 (0.96)
DIA.
Revision: 01-Mar-2021
Document Number: 88356
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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www.vishay.com
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Disclaimer
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© 2021 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 09-Jul-2021
Document Number: 91000
1
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