1N6374/92 [VISHAY]
Trans Voltage Suppressor Diode, 1500W, 8V V(RWM), Unidirectional, 1 Element, Silicon, PLASTIC, CASE 1.5KE, 2 PIN;
| 型号： | 1N6374/92 |
| 厂家： | 
VISHAY |
| 描述： | Trans Voltage Suppressor Diode, 1500W, 8V V(RWM), Unidirectional, 1 Element, Silicon, PLASTIC, CASE 1.5KE, 2 PIN 局域网 二极管 |
| 文件： | 总5页 (文件大小：96K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ICTE5.0 thru ICTE18C, 1N6373 thru 1N6386
Vishay General Semiconductor
TRANSZORB® Transient Voltage Suppressors
FEATURES
• Glass passivated chip junction
• Available in uni-directional and bi-directional
• 1500 W peak pulse power capability with a
10/1000 µs waveform, repetitive rate (duty cycle):
0.01 %
• Excellent clamping capability
• Very fast response time
Case Style 1.5KE
• Low incremental surge resistance
• Solder dip 260 °C, 40 seconds
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
PRIMARY CHARACTERISTICS
TYPICAL APPLICATIONS
VWM
PPPM
PD
5.0 V to 18 V
Use in sensitive electronics protection against voltage
transients induced by inductive load switching
and lighting on ICs, MOSFET, signal lines of sensor
units for consumer, computer, industrial and
telecommunication.
1500 W
6.5 W
IFSM
200 A
TJ max.
175 °C
MECHANICAL DATA
Case: Molded epoxy body over passivated junction
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
DEVICES FOR BI-DIRECTION APPLICATIONS
For bi-directional types, use C suffix (e.g. ICTE-18C).
Electrical characteristics apply in both directions.
Polarity: For uni-directional types the color band
denotes cathode end, no marking on bi-directional
types
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)
A
PARAMETER
SYMBOL
PPPM
IPPM
LIMIT
1500
UNIT
W
Peak pulse power dissipation with a 10/1000 µs waveform (1) (Fig. 1)
Peak pulse current with a 10/1000 µs waveform (1) (Fig. 3)
Power dissipation on infinite heatsink at TL = 75 °C (Fig. 8)
Peak forward surge current 8.3 ms single half sine-wave uni-directional only (2)
Maximum instantaneous forward voltage at 100 A for uni-directional only
Operating junction and storage temperature range
See next table
6.5
A
PD
W
IFSM
200
A
VF
3.5
V
TJ, TSTG
- 55 to + 175
°C
Notes:
(1) Non-repetitive current pulse, per Fig. 3 and derated above TA = 25 °C per Fig. 2
(2) 8.3 ms single half sine-wave, duty cycle = 4 pulses per minute maximum
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Document Number: 88356
Revision: 04-Sep-07
ICTE5.0 thru ICTE18C, 1N6373 thru 1N6386
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (JEDEC REGISTERED DATA) (T = 25 °C unless otherwise noted)
A
MINIMUM (3)
BREAKDOWN
VOLTAGE
MAXIMUM
REVERSE
LEAKAGE
AT VWM
MAXIMUM
CLAMPING
VOLTAGE
MAXIMUM
CLAMPING
VOLTAGE AT
MAXIMUM
PEAK
PULSE
STAND-OFF
VOLTAGE
GENERAL
SEMICONDUCTOR
PART NUMBER
JEDEC TYPE
NUMBER
AT IPP = 1.0 A
I
PP = 10 A
VWM (V)
CURRENT
AT 1.0 mA
I
PP (A)
ID (µA)
VC (V)
VC (V)
V
BR (V)
UNI-DIRECTIONAL TYPES
1N6373 (2)
1N6374
1N6375
1N6376
1N6377
1N6378
ICTE-5 (2)
5.0
8.0
6.0
9.4
300
25.0
2.0
7.1
7.5
160
100
90
ICTE-8
11.3
13.7
16.1
20.1
24.2
11.5
14.1
16.5
20.6
25.2
ICTE-10
ICTE-12
ICTE-15
ICTE-18
10.0
12.0
15.0
18.0
11.7
14.1
17.6
21.2
2.0
70
2.0
60
2.0
50
BI-DIRECTIONAL TYPES
1N6382
1N6383
1N6384
1N6385
1N6386
ICTE-8C
ICTE-10C
ICTE-12C
ICTE-15C
ICTE-18C
8.0
9.4
50.0
2.0
2.0
2.0
2.0
11.4
14.1
16.7
20.8
24.8
11.6
14.5
17.1
21.4
25.5
100
90
70
60
50
10.0
12.0
15.0
18.0
11.7
14.1
17.6
21.2
Notes:
(1) “C” Suffix indicates bi-directional
(2) ICTE-5 and 1N6373 are not available as bi-directional
(3) The minimum breakdown voltage as shown takes into consideration the 1 V tolerance normally specified for power supply regulation on
most integrated circuit manufacturers data sheets. Please consult factory for devices that require reduced clamping voltages where tighter
regulated power supply voltages are employed
(4) Clamping factor: 1.33 at full rated power; 1.20 at 50 % rated power; Clamping factor: the ratio of the actual VC (Clamping Voltage) to the
V
BR (Breakdown Voltage) as measured on a specific device
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
ICTE-5-E3/54
ICTE-5HE3/54 (1)
0.968
54
54
1400
1400
13" diameter paper tape and reel
13" diameter paper tape and reel
0.968
Note:
(1) Automotive grade AEC Q101 qualified
Document Number: 88356
Revision: 04-Sep-07
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117
ICTE5.0 thru ICTE18C, 1N6373 thru 1N6386
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES
(T = 25 °C unless otherwise noted)
A
100000
10000
1000
100
Non-Repetitive Pulse
Waveform shown in Fig. 3
TA = 25 °C
Measured at
Zero Bias
10
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
Measured at Stand-Off
Voltage VWM
1
0.1
0.1 µs
100
1.0 µs
10 µs
100 µs
1.0 ms
10 ms
10
100
200
1.0
td - Pulse Width (s)
VBR - Breakdown Voltage (V)
Figure 1. Peak Pulse Power Rating Curve
Figure 4. Typical Junction Capacitance Uni-Directional
100
100000
Measured at
Zero Bias
Bi-Directional Type
75
50
Non-Repetitive Pulse
Waveform shown in Fig. 3
TA = 25 °C
10000
1000
100
25
0
Measured at Stand-Off
Voltage VWM
0
25
50
75
100
125
150 175
200
1.0
10
100
200
TJ - Initial Temperature (°C)
VBR - Breakdown Voltage (V)
Figure 2. Pulse Power or Current vs. Initial Junction Temperature
Figure 5. Typical Junction Capacitance
150
200
TJ = 25 °C
Pulse Width (td)
TJ = TJ max.
tr = 10 µs
8.3 ms Single Half Sine-Wave
is defined as the Point
where the Peak Current
decays to 50 % of IPPM
Peak Value
100
50
IPPM
100
50
0
Half Value -
IPP
2
IPPM
10/1000 µs Waveform
as defined by R.E.A.
td
10
1.0
3.0
4.0
0
2.0
1
5
10
50
100
t - Time (ms)
Number of Cycles at 60 Hz
Figure 3. Pulse Waveform
Figure 6. Maximum Non-Repetitive Forward Surge Current
Uni-Directional Only
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118
Document Number: 88356
Revision: 04-Sep-07
ICTE5.0 thru ICTE18C, 1N6373 thru 1N6386
Vishay General Semiconductor
50
10
8.0
Uni-Directional Only
TA = 25 °C
7.0
6.0
5.0
4.0
3.0
L = 0.375" (9.5 mm)
Lead Lengths
2.0
1.0
1
0
28
6
8
10 12 14 16 18 20 22 24 26
VC - Clamping Voltage (V)
0
25
50
75
100 125 150
175
200
TL - Lead Temperature (°C)
Figure 7. Typical Characteristics Clamping Voltage
Figure 8. Power Derating Curve
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Case Style 1.5KE
1.0 (25.4)
MIN.
0.210 (5.3)
0.190 (4.8)
DIA.
0.375 (9.5)
0.285 (7.2)
1.0 (25.4)
MIN.
0.042 (1.07)
0.038 (0.96)
DIA.
Document Number: 88356
Revision: 04-Sep-07
www.vishay.com
119
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
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1
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