1N5820/58 [VISHAY]
Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 20V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2;
| 型号： | 1N5820/58 |
| 厂家： | 
VISHAY |
| 描述： | Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 20V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2 |
| 文件： | 总4页 (文件大小：342K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
1N5820 thru 1N5822
Vishay General Semiconductor
Schottky Barrier Rectifier
FEATURES
• Guardring for overvoltage protection
• Very small conduction losses
• Extremely fast switching
• Low forward voltage drop
• High forward surge capability
• High frequency operation
• Solder dip 260 °C, 40 s
DO-201AD
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in low voltage high frequency inverters,
freewheeling, dc-to-dc converters, and polarity
protection applications.
PRIMARY CHARACTERISTICS
IF(AV)
3.0 A
VRRM
IFSM
20 V, 30 V, 40 V
80 A
MECHANICAL DATA
Case: DO-201AD
VF
0.475 V, 0.500 V, 0.525 V
125 °C
Epoxy meets UL 94V-0 flammability rating
TJ max.
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test
Polarity: Color band denotes the cathode end
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)
A
PARAMETER
SYMBOL
VRRM
VRMS
1N5820
20
1N5821
30
1N5822
40
UNIT
Maximum repetitive peak reverse voltage
Maximum RMS voltage
V
V
V
V
14
21
28
Maximum DC blocking voltage
Non-repetitive peak reverse voltage
VDC
20
30
40
VRSM
24
36
48
Maximum average forward rectified current 0.375" (9.5 mm) lead
length at TL = 95 °C
IF(AV)
3.0
A
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
IFSM
80
A
Storage temperature range
TJ, TSTG
- 65 to + 125
°C
ELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise noted)
A
PARAMETER
TEST CONDITIONS SYMBOL
1N5820
1N5821
0.500
1N5822
0.525
UNIT
V
Maximum instantaneous forward voltage (1) 3.0
Maximum instantaneous forward voltage (1) 9.4
VF
VF
0.475
0.850
0.900
0.950
V
Maximum average reverse current at rated
DC blocking voltage (1)
TA = 25 °C
TA = 100 °C
2.0
20
IR
mA
Note:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
Document Number: 88526
Revision: 20-Aug-07
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
155
1N5820 thru 1N5822
Vishay General Semiconductor
THERMAL CHARACTERISTICS (T = 25 °C unless otherwise noted)
A
PARAMETER
SYMBOL
1N5820
1N5821
1N5822
UNIT
RθJA
RθJL
40
10
Typical thermal resistance (1)
°C/W
Note:
(1) Thermal resistance from junction to lead vertical P.C.B. mounted, 0.500" (12.7 mm) lead length with 2.5 x 2.5" (63.5 x 63.5 mm) copper pad
ORDERING INFORMATION (Example)
PREFERRED P/N
1N5820-E3/54
1N5820-E3/73
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
13" diameter paper tape and reel
Ammo pack packaging
1.08
1.08
54
73
1400
1000
RATINGS AND CHARACTERISTICS CURVES
(T = 25 °C unless otherwise noted)
A
4.0
100
10
TJ = 125 °C
Resistive or Inductive Load
0.375" (9.5 mm) Lead Length
3.0
2.0
1.0
0
Pulse Width = 300 µs
1 % Duty Cycle
1
T
J = 25 °C
0.1
0.01
0
20
40
60
80
100
120
140
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Lead Temperature (°C)
Instantaneous Forward Voltage (V)
Figure 1. Forward Current Derating Curve
Figure 3. Typical Instantaneous Forward Characteristics
80
70
60
50
40
30
20
10
10
TJ = TJ Max.
8.3 ms Single Half Sine-Wave
TJ = 125 °C
1
TJ = 75 °C
0.1
TJ = 25 °C
0.01
0.001
1
10
100
0
20
40
60
80
100
Number of Cycles at 60 Hz
Percent of Rated Peak Reverse Voltage (%)
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
Figure 4. Typical Reverse Characteristics
www.vishay.com
156
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88526
Revision: 20-Aug-07
1N5820 thru 1N5822
Vishay General Semiconductor
1000
100
10
100
10
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
1
0.1
0.1
1
10
100
0
0.1
1
10
100
Reverse Voltage (V)
t - Pulse Duration (s)
Figure 5. Typical Junction Capacitance
Figure 6. Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-201AD
1.0 (25.4)
MIN.
0.210 (5.3)
0.190 (4.8)
DIA.
0.375 (9.5)
0.285 (7.2)
1.0 (25.4)
MIN.
0.052 (1.32)
0.048 (1.22)
DIA.
Document Number: 88526
Revision: 20-Aug-07
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
157
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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