1N5817-E3/73 [VISHAY]
Diode Schottky 20V 1A 2-Pin DO-204AL Ammo;
| 型号： | 1N5817-E3/73 |
| 厂家： | 
VISHAY |
| 描述： | Diode Schottky 20V 1A 2-Pin DO-204AL Ammo 二极管 |
| 文件： | 总4页 (文件大小：80K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
1N5817, 1N5818, 1N5819
Vishay General Semiconductor
www.vishay.com
Schottky Barrier Plastic Rectifier
FEATURES
• Guardring for overvoltage protection
• Very small conduction losses
• Extremely fast switching
• Low forward voltage drop
• High frequency operation
• Solder dip 275 °C max. 10 s, per JESD 22-B106
DO-204AL (DO-41)
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in low voltage high frequency inverters,
freewheeling, DC/DC converters, and polarity protection
applications.
PRIMARY CHARACTERISTICS
IF(AV)
1.0 A
VRRM
IFSM
20 V, 30 V, 40 V
25 A
MECHANICAL DATA
Case: DO-204AL (DO-41)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
VF
0.45 V, 0.55 V, 0.60 V
125 °C
TJ max.
Package
Diode variations
DO-204AL
Single
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: Color band denotes the cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
1N5817
20
1N5818
30
1N5819
40
UNIT
Maximum repetitive peak reverse voltage
Maximum RMS voltage
VRRM
V
V
V
V
VRMS
14
21
28
Maximum DC blocking voltage
Maximum non-repetitive peak reverse voltage
VDC
20
30
40
VRSM
24
36
48
Maximum average forward rectified current
IF(AV)
IFSM
1.0
25
A
A
at 0.375" (9.5 mm) lead length at TL = 90 °C
Peak forward surge current, 8.3 ms single half
sine-wave superimposed on rated load
Voltage rate of change (rated VR)
dV/dt
10 000
V/μs
°C
Operating junction and storage temperature range
TJ, TSTG
- 65 to + 125
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
1.0
3.1
SYMBOL
1N5817
1N5818
0.550
0.875
1.0
1N5819
UNIT
(1)
Maximum instantaneous forward voltage
Maximum instantaneous forward voltage
VF
0.450
0.600
0.900
V
V
(1)
VF
0.750
TA = 25 °C
Maximum average reverse current
at rated DC blocking voltage
(1)
IR
mA
pF
TA = 100 °C
10
Typical junction capacitance
4.0 V, 1.0 MHz
CJ
125
110
Note
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
Revision: 13-Aug-13
Document Number: 88525
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1N5817, 1N5818, 1N5819
Vishay General Semiconductor
www.vishay.com
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
1N5817
1N5818
50
1N5819
UNIT
(1)
RJA
Typical thermal resistance
°C/W
(1)
RJL
15
Note
(1)
Thermal resistance from junction to lead vertical PCB mounted, 0.375" (9.5 mm) lead length with 1.5" x 1.5" (38 mm x 38 mm) copper pads
ORDERING INFORMATION (Example)
PREFERRED P/N
1N5819-E3/54
1N5819-E3/73
UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY
DELIVERY MODE
13" diameter paper tape and reel
Ammo pack packaging
0.332
0.332
54
73
5500
3000
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
1.0
100
10
TJ = 125 °C
0.75
Pulse Width = 300 μs
1 % Duty Cycle
Resistive or Inductive Load
0.375" (9.5 mm) Lead Length
0.5
0.25
0
1
TJ = 25 °C
0.1
0.01
0
80
100
120
20
40
60
140
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Case Temperature (°C)
Instantaneous Forward Voltage (V)
Fig. 1 - Forward Current Derating Curve
Fig. 3 - Typical Instantaneous Forward Characteristics
30
25
20
15
10
5
100
10
TJ = 125 °C
1
0.1
0.01
TJ = 75 °C
TJ = 25 °C
0.001
0
0
20
40
60
80
100
1
10
100
Percent of Rated Peak Reverse Voltage (%)
Number of Cycles at 60 Hz
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Fig. 4 - Typical Reverse Characteristics
Revision: 13-Aug-13
Document Number: 88525
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1N5817, 1N5818, 1N5819
Vishay General Semiconductor
www.vishay.com
1000
100
10
100
10
1
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
1N5817
0.1
0.01
100
0.1
1
10
0.1
1
10
100
Reverse Voltage (V)
t - Pulse Duration (s)
Fig. 5 - Typical Junction Capacitance
Fig. 7 - Typical Transient Thermal Impedance
1000
100
10
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
1N5818, 1N5819
0.1
1
10
100
Reverse Voltage (V)
Fig. 6 - Typical Junction Capacitance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-204AL (DO-41)
1.0 (25.4)
MIN.
0.107 (2.7)
0.080 (2.0)
DIA.
0.205 (5.2)
0.160 (4.1)
1.0 (25.4)
MIN.
0.034 (0.86)
0.028 (0.71)
DIA.
Revision: 13-Aug-13
Document Number: 88525
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
Document Number: 91000
1
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