1N5627TR [VISHAY]
Rectifier Diode, Avalanche, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, HERMETIC SEALED, GLASS PACKAGE-2;
| 型号： | 1N5627TR |
| 厂家： | 
VISHAY |
| 描述： | Rectifier Diode, Avalanche, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, HERMETIC SEALED, GLASS PACKAGE-2 |
| 文件： | 总4页 (文件大小：32K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
1N5624...1N5627
Vishay Telefunken
Silicon Mesa Rectifiers
Features
Glass passivated junction
Hermetically sealed package
Controlled avalanche characteristics
Low reverse current
High surge current loading
Applications
94 9588
Rectifier, general purpose
Absolute Maximum Ratings
T = 25 C
j
Parameter
Test Conditions
Type
Symbol
V =
Value
200
400
600
800
100
18
Unit
V
1N5624
1N5625
1N5626
1N5627
Reverse voltage=
Repetitive peak reverse voltage
R
V
RRM
Peak forward surge current
Repetitive peak forward current
Average forward current
t =10ms, half sinewave
I
A
A
A
p
FSM
I
FRM
I
3
FAV
t =20 s, half sine wave,
T =175 C
j
p
Pulse avalanche peak power
P
R
1000
W
Pulse energy in avalanche mode,
non repetitive (inductive load
switch off)
I
=1A, T =175 C
E
20
mJ
(BR)R
j
R
2
2
2
i *t–rating
i *t
40
A *s
Junction and storage tempera-
ture range
T =T
–65...+175
C
j
stg
Maximum Thermal Resistance
T = 25 C
j
Parameter
Test Conditions
l=10mm, T =constant
on PC board with spacing 25mm
Symbol
Value
25
70
Unit
K/W
L
Junction ambient
R
thJA
www.vishay.com
1 (4)
Document Number 86063
Rev. 2, 27-Sep-00
1N5624...1N5627
Vishay Telefunken
Electrical Characteristics
T = 25 C
j
Parameter
Test Conditions
Type Symbol Min
Typ Max Unit
Forward voltage
I =3A
V
1.0
1
10
1600
60
4
V
F
F
V =V
0.1
5
R
RRM
Reverse current
I
R
A
V =V
, T =100 C
R
RRM
j
Breakdown voltage
Diode capacitance
I =100 A, t /T=0.01, t =0.3ms
V
(BR)
V
pF
R
p
p
V =4V, f=1MHz
C
D
40
2
3
R
I =0.5A, I =1A, i =0.25A
F
R
R
Reverse recovery time
t
rr
s
I =1A, d /d =5A/ s, V =50V
F
6
i
t
R
Reverse recovery charge
I =1A, d /d =5A/ s
Q
rr
6
10
C
F
i
t
Characteristics (Tj = 25 C unless otherwise specified)
40
30
20
10
0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
V =V
R
R RM
half sinewave
=25K/W
R
thJA
l=10mm
l
l
R
=70K/W
thJA
PCB: d=25mm
T =constant
L
30
0
20 40 60 80 100 120 140 160 180
– Ambient Temperature ( °C )
0
5
10
15
20
25
16393
T
amb
94 9563
l – Lead Length ( mm )
Figure 1. Max. Thermal Resistance vs. Lead Length
Figure 3. Max. Average Forward Current vs.
Ambient Temperature
100.000
10.000
1000
V
= V
RRM
R
100
10
1
T =175°C
j
1.000
0.100
0.010
0.001
T =25°C
j
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
– Forward Voltage ( V )
25
50
75
100
125
150
175
16392
V
16394
T – Junction Temperature ( °C )
F
j
Figure 2. Forward Current vs. Forward Voltage
Figure 4. Reverse Current vs. Junction Temperature
www.vishay.com
2 (4)
Document Number 86063
Rev. 2, 27-Sep-00
1N5624...1N5627
Vishay Telefunken
300
250
200
150
100
50
100
90
80
70
60
50
40
30
20
10
0
V
= V
RRM
R
f=1MHz
P –Limit
R
@100%V
R
P –Limit
R
@80%V
R
0
25
50
75
100
125
150
175
0.1
1.0
V – Reverse Voltage ( V )
R
10.0
100.0
16395
T – Junction Temperature ( °C )
16396
j
Figure 5. Max. Reverse Power Dissipation vs.
Junction Temperature
Figure 6. Diode Capacitance vs. Reverse Voltage
Dimensions in mm
4.3 max.
Sintered Glass Case
SOD 64
Cathode Identification
technical drawings
according to DIN
specifications
Weight max. 1.0g
1.35 max.
26 min.
26 min.
4.2 max.
94 9587
www.vishay.com
3 (4)
Document Number 86063
Rev. 2, 27-Sep-00
1N5624...1N5627
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
www.vishay.com
4 (4)
Document Number 86063
Rev. 2, 27-Sep-00
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