1N5550 [VISHAY]

GLASS PASSIVATED JUNCTION RECTIFIER; 玻璃钝化结整流器
1N5550
型号: 1N5550
厂家: VISHAY    VISHAY
描述:

GLASS PASSIVATED JUNCTION RECTIFIER
玻璃钝化结整流器

文件: 总2页 (文件大小:56K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
1N5550 THRU 1N5552  
GLASS PASSIVATED JUNCTION RECTIFIER  
Reverse Voltage - 200 to 1000 Volts Forward Current - 3.0 Amperes  
FEATURES  
Glass passivated cavity-free junction  
High temperature metallurgically bonded construction  
Hermetically sealed package  
Case Style G4  
Capable of meeting  
environmental  
standards of  
1.0 (25.4)  
MIN.  
0.180 (4.6)  
0.115 (2.9)  
DIA.  
MIL-S-19500  
Medium switching for  
improved efficiency  
High temperature soldering guaranteed:  
0.300 (7.6)  
MAX.  
350°C/10 seconds, 0.375" (9.5mm) lead length,  
5 lbs. (2.3kg) tension  
0.042 (1.07)  
1.0 (25.4)  
0.038 (0.962)  
MECHANICAL DATA  
MIN.  
DIA.  
Case: Solid glass body  
Terminals: Solder plated axial leads, solderable per  
MIL-STD-750, Method 2026  
Polarity: Color band denotes cathode end  
Dimensions in inches and (millimeters)  
Mounting Position: Any  
Weight: 0.037 ounce, 1.04 grams  
*
Brazed-lead assembly is covered by Patent No. 3,930,306  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25°C ambient temperature unless otherwise specified.  
SYMBOLS  
VRRM  
VRMS  
VDC  
1N5550  
200  
1N5551  
400  
1N5552  
600  
UNITS  
Volts  
Volts  
Volts  
Volts  
*Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
140  
280  
420  
*Maximum DC blocking voltage  
200  
400  
600  
*Minimum reverse breakdown voltage at 50µA  
V(BR)  
240  
460  
660  
*Maximum average forward rectified current  
0.375" (9.5mm) lead length at TA=55°C  
I(AV  
)
3.0  
Amps  
Peak forward surge current  
8.3ms single half sine-wave superimposed  
on rated load (JEDEC Method)  
IFSM  
VF  
100.0  
1.2  
Amps  
Volts  
µA  
Maximum instantaneous forward voltage at 9.0A  
*Maximum DC reverse current  
at rated DC blocking voltage  
TA=25°C  
TA=100°C  
TA=200°C  
1.0  
25.0  
1500.0  
IR  
*Maximum junction capacitance (NOTE 1  
*Maximum reverse recovery time (NOTE 2)  
Typical thermal resistance (NOTE 3  
)
CJ  
trr  
150  
120  
2.0  
100  
pF  
µs  
)
RΘJA  
RΘJL  
22.0  
12.0  
°C/W  
°C  
*Operating and storage temperature range  
TJ, TSTG  
-65 to +200  
NOTES:  
(1) Measured at 1.0 MHZ and applied reverse voltage of 12.0 Volts  
(2) Reverse recovery test conditions: IF=0.5A, IR=1.0A, Irr=0.25A  
(3) Thermal resistance from junction to ambient and from junction to lead at 0.375” (9.5mm) lead length,  
with both leads mounted between heat sinks.  
*JEDEC registered values  
4/98  
RATINGS AND CHARACTERISTIC CURVES 1N5550 THRU 1N5552  
FIG. 2 - MAXIMUM NON-REPETITIVE PEAK FORWARD  
SURGE CURRENT  
FIG. 1 - FORWARD CURRENT DERATING CURVE  
5.0  
4.0  
3.0  
2.0  
1.0  
0
200  
100  
T
LEAD TEMPERATURE  
L = 0.375" (9.5mm)  
L,  
T =T max.  
8.3ms SINGLE HALF  
SINE-WAVE(JEDEC Method)  
J
J
0.8 x 0.8 x .040"  
(20 x 20 x 1mm)  
COPPER  
T , AMBIENT  
A
TEMPERATURE  
HEATSINKS  
P.C.B. MOUNTED,  
0.375" (9.5mm) LEAD LENGTH  
RESISTIVE OR INDUCTIVE LOAD  
0
25  
50  
75  
100 125 150 175 200  
10  
TEMPERATURE, °C  
1
10  
100  
NUMBER OF CYCLES AT 60 Hz  
FIG. 3 - TYPICAL INSTANTANEOUS  
FORWARD CHARACTERISTICS  
FIG. 4 -TYPICAL REVERSE CHARACTERISTICS  
50  
20  
10  
T =150°C  
J
10  
PULSE WIDTH=300µs  
1% DUTY CYCLE  
T =125°C  
J
1
T =25°C  
J
1
T =75°C  
J
0.1  
0.1  
0.01  
0.01  
20  
0
40  
60  
80  
100  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
PERCENT OF RATED PEAK REVERSE  
VOLTAGE, %  
INSTANTANEOUS FORWARD REVERSE VOLTAGE,  
VOLTS  
FIG. 5 - TYPICAL JUNCTION CAPACITANCE  
100  
T =25°C  
J
f=1.0 MHz  
Vsig=50mVp-p  
10  
1
10  
100  
REVERSE VOLTAGE, VOLTS  

相关型号:

1N5550-1

RECTIFIERS
MICROSEMI

1N5550/54

Rectifier Diode, 1 Element, 3A, 200V V(RRM),
VISHAY

1N5550D3A

POWER RECTIFIER DIODE
SEME-LAB

1N5550D3B

POWER RECTIFIER DIODE
SEME-LAB

1N5550R

Rectifier Diode, 1 Phase, 1 Element, 5A, Silicon,
MICROSEMI

1N5550TRLEADFREE

Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon,
CENTRAL

1N5550US

VOIDLESS HERMITICALLY SEALED SURFACE MOUNT STANDARD RECOVERY GLASS RECTIFIERS
MICROSEMI

1N5550US

HIGH CURRENT AXIAL LEAD RECTIFIERS : 200-1000 VOLT, 3.0 AMP, 2000 NANOSECOND RECTIFIER
SENSITRON

1N5550US

Surface Mount Hermetically Sealed Standard Recovery Rectifier Diode
SEMTECH

1N5550USE3

Rectifier Diode, Avalanche, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, ROHS COMPLIANT, HERMETIC SEALED, GLASS, D-5B, SQ-MELF, B PACKAGE-2
MICROSEMI

1N5550USS

Rectifier Diode, 1 Phase, 1 Element, 3A, Silicon,
SENSITRON

1N5550USV

暂无描述
SENSITRON