1N5226B 概述
Silicon Z-Diodes 硅Z-二极管
1N5226B 数据手册
通过下载1N5226B数据手册来全面了解它。这个PDF文档包含了所有必要的细节,如产品概述、功能特性、引脚定义、引脚排列图等信息。
PDF下载1N5221B...1N5267B
Vishay Telefunken
Silicon Z–Diodes
Features
Very sharp reverse characteristic
Very high stability
Low reverse current level
V –tolerance ± 5%
Z
Applications
94 9367
Voltage stabilization
Absolute Maximum Ratings
T = 25 C
j
Parameter
Power dissipation
Z–current
Junction temperature
Storage temperature range
Test Conditions
75 C
Type
Symbol
Value
500
Unit
mW
mA
C
P
V
T
L
I
Z
P /V
V
Z
T
200
–65...+200
j
T
stg
C
Maximum Thermal Resistance
T = 25 C
j
Parameter
Junction ambient
Test Conditions
l=9.5mm (3/8”), T =constant
Symbol
R
thJA
Value
300
Unit
K/W
L
Electrical Characteristics
T = 25 C
j
Parameter
Forward voltage
Test Conditions
I =200mA
Type
Symbol Min
Typ Max Unit
1.1
V
F
V
F
www.vishay.de • FaxBack +1-408-970-5600
Document Number 85588
Rev. 2, 06-Aug-99
1 (4)
1N5221B...1N5267B
Vishay Telefunken
1)
Type
V
I
for
r
r
at
I
I
at
V
TK
VZ
%/K
Znom
V
ZT
zjT
zjk
ZK
R
A
R
mA
20
mA
V
1N5221B
1N5222B
1N5223B
1N5224B
1N5225B
1N5226B
1N5227B
1N5228B
1N5229B
1N5230B
1N5231B
1N5232B
1N5233B
1N5234B
1N5235B
1N5236B
1N5237B
1N5238B
1N5239B
1N5240B
1N5241B
1N5242B
1N5243B
1N5244B
1N5245B
1N5246B
1N5247B
1N5248B
1N5249B
1N5250B
1N5251B
1N5252B
1N5253B
1N5254B
1N5255B
1N5256B
1N5257B
1N5258B
1N5259B
1N5260B
1N5261B
1N5262B
1N5263B
1N5264B
1N5265B
1N5266B
1N5267B
2.4
2.5
2.7
2.8
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.0
6.2
6.8
7.5
8.2
8.7
9.1
10
11
< 30
< 30
< 30
< 30
< 29
< 28
< 24
< 23
< 22
< 19
< 17
< 11
< 7
< 1200
< 1250
< 1300
< 1400
< 1600
< 1600
< 1700
< 1900
< 2000
< 1900
< 1600
< 1600
< 1600
< 1000
< 750
< 500
< 500
< 600
< 600
< 600
< 600
< 600
< 600
< 600
< 600
< 600
< 600
< 600
< 600
< 600
< 600
< 600
< 600
< 600
< 600
< 600
< 700
< 700
< 800
< 900
< 1000
< 1100
< 1300
< 1400
< 1400
< 1600
< 1700
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
< 100
< 100
< 75
< 75
< 50
< 25
< 15
< 10
< 5
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
2.0
2.0
3.0
3.5
4.0
5.0
6.0
6.5
6.5
7.0
8.0
8.4
9.1
9.9
10
< –0.085
< –0.085
< –0.080
< –0.080
< –0.075
< –0.070
< –0.065
< –0.060
< +0.055
< +0.030
< +0.030
< +0.038
< +0.038
< +0.045
< +0.050
< +0.058
< +0.062
< +0.065
< +0.068
< +0.075
< +0.076
< +0.077
< +0.079
< +0.082
< +0.082
< +0.083
< +0.084
< +0.085
< +0.086
< +0.086
< +0.087
< +0.088
< +0.089
< +0.090
< +0.091
< +0.091
< +0.092
< +0.093
< +0.094
< +0.095
< +0.095
< +0.096
< +0.096
< +0.097
< +0.097
< +0.097
< +0.098
20
20
20
20
20
20
20
20
20
< 5
20
< 5
20
< 5
20
< 5
20
< 7
< 5
20
< 5
< 3
20
< 6
< 3
20
< 8
< 3
20
< 8
< 3
20
< 10
< 17
< 22
< 30
< 13
< 15
< 16
< 17
< 19
< 21
< 23
< 25
< 29
< 33
< 35
< 41
< 44
< 49
< 58
< 70
< 80
< 93
< 105
< 125
< 150
< 170
< 185
< 230
< 270
< 3
20
< 3
20
< 2
12
13
14
15
16
17
18
19
20
22
24
25
27
28
30
33
36
39
43
47
51
56
60
62
68
75
20
< 1
9.5
9.0
8.5
7.8
7.4
7.0
6.6
6.2
5.6
5.2
5.0
4.6
4.5
4.2
3.8
3.4
3.2
3.0
2.7
2.5
2.2
2.1
2.0
1.8
1.7
< 0.5
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
11
12
13
14
14
15
17
18
19
21
21
23
25
27
30
33
36
39
43
46
47
52
56
1)
Based on dc–measurement at thermal equilibrium; lead length = 9.5mm (3/8”); thermal resistance of heat sink = 30K/W
www.vishay.de • FaxBack +1-408-970-5600
2 (4)
Document Number 85588
Rev. 2, 06-Aug-99
1N5221B...1N5267B
Vishay Telefunken
Dimensions in mm
Cathode Identification
0.55 max.
technical drawings
according to DIN
specifications
1.7 max.
94 9366
Standard Glass Case
54 A 2 DIN 41880
JEDEC DO 35
26 min.
3.9 max.
26 min.
Weight max. 0.3g
www.vishay.de • FaxBack +1-408-970-5600
Document Number 85588
Rev. 2, 06-Aug-99
3 (4)
1N5221B...1N5267B
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
www.vishay.de • FaxBack +1-408-970-5600
4 (4)
Document Number 85588
Rev. 2, 06-Aug-99
1N5226B 相关器件
型号 | 制造商 | 描述 | 价格 | 文档 |
1N5226B(DO-35) | MCC | Zener Diode, 3.3V V(Z), 0.5W, Silicon, Unidirectional, DO-35, DO-35, 2 PIN | 获取价格 | |
1N5226B(DO-35)-BP | MCC | DIODE 3.3 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35, DO-35, 2 PIN, Voltage Regulator Diode | 获取价格 | |
1N5226B(DO-35)P | MCC | DIODE 3.3 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35, DO-35, 2 PIN, Voltage Regulator Diode | 获取价格 | |
1N5226B(DO7) | MICROSEMI | Zener Diode, 3.3V V(Z), 5%, 0.5W, Silicon, Unidirectional, DO-7, DO-7, 2 PIN | 获取价格 | |
1N5226B-1 | MICROSEMI | Zener Diode, 3.3V V(Z), 5%, 0.48W, Silicon, Unidirectional, DO-204AH, HERMETIC SEALED, GLASS, DO-35, 2 PIN | 获取价格 | |
1N5226B-13 | DIODES | Zener Diode, 3.3V V(Z), 5%, 0.5W, Silicon, Unidirectional, DO-35, HERMETIC SEALED, GLASS PACKAGE-2 | 获取价格 | |
1N5226B-1TR | MICROSEMI | Zener Diode, 3.3V V(Z), 5%, 0.48W, Silicon, Unidirectional, DO-204AH, HERMETIC SEALED, GLASS, DO-35, 2 PIN | 获取价格 | |
1N5226B-A | DIODES | 500mW EPITAXIAL ZENER DIODE | 获取价格 | |
1N5226B-A | MCC | Zener Diode, 3.3V V(Z), 5%, 0.5W, | 获取价格 | |
1N5226B-AP | MCC | Zener Diode, 3.3V V(Z), 5%, 0.5W, Silicon, Unidirectional, DO-35, ROHS COMPLIANT, GLASS PACKAGE-2 | 获取价格 |
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