1N4946GPE/51 [VISHAY]
Rectifier Diode, 1 Element, 1A, 600V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN;
| 型号： | 1N4946GPE/51 |
| 厂家： | 
VISHAY |
| 描述： | Rectifier Diode, 1 Element, 1A, 600V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN |
| 文件： | 总2页 (文件大小：30K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
1N4942GP thru 1N4942GP
Vishay Semiconductors
formerly General Semiconductor
Glass Passivated Junction
Fast Switching Rectifier
Reverse Voltage 200 to 1000V
Forward Current 1.0A
DO-204AL (DO-41)
Features
• Plastic package has Underwriters Laboratories
Flammability Classification 94V-0
• High temperature metallurgically bonded construction
• For use in high frequency rectifier circuits
• Fast switching for high efficiency
1.0 (25.4)
MIN.
0.107 (2.7)
0.080 (2.0)
DIA.
• Cavity-free glass passivated junction
• Capable of meeting environmental standards of
MIL-S-19500
• 1.0 Ampere operation at TA=55°C with no thermal runaway
• High temperature soldering guaranteed:
350°C/10 seconds, 0.375" (9.5mm) lead length,
5 lbs. (2.3kg) tension
0.205 (5.2)
0.160 (4.1)
Dimensions in inches
and (millimeters)
®
1.0 (25.4)
MIN.
Mechanical Data
Case: JEDEC DO-204AL, molded plastic over glass body
Terminals: Plated axial leads, solderable per
MIL-STD-750, Method 2026
0.034 (0.86)
0.028 (0.71)
DIA.
Polarity: Color band denotes cathode end
Mounting Position: Any
0.026 (0.66)
0.023 (0.58)
NOTE: Lead diameter is
for suffix "E" part numbers
Weight: 0.012 oz., 0.3 g
Dimensions in inches and (millimeters)
*Glass-plastic encapsulation technique is covered by
Patent No. 3,996,602, and brazed-lead assembly by Patent No. 3,930,306
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
Symbol 1N4942GP 1N4944GP 1N4946GP 1N4947GP 1N4948GP Unit
* Maximum repetitive peak reverse voltage
* Maximum RMS voltage
VRRM
VRMS
VDC
200
140
200
400
280
400
600
420
600
800
560
800
1000
700
V
V
V
* Maximum DC blocking voltage
1000
* Maximum average forward rectified current
0.375" (9.5mm) lead length at TA=55°C
IF(AV)
1.0
A
* Peak forward surge current
8.3ms single half sine-wave superimposed
on rated load (JEDEC Method)
IFSM
25
A
Typical thermal resistance (1)
RΘJA
55
°C/W
°C
* Operating junction and storage temperature range
TJ, TSTG
-65 to +175
Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
* Maximum instantaneous forward voltage at 1.0A
VF
1.3
V
* Maximum DC reverse current
at rated DC blocking voltage
TA= 25°C
TA=150°C
1.0
200
IR
µA
* Maximum reverse recovery time at
IF=0.5A, IR=1.0A, Irr=0.25A
trr
150
250
500
ns
Typical junction capacitance at 4.0V, 1MHz
CJ
15
pF
Notes:
(1) Thermal resistance from junction to ambient, and from junction to lead at 0.375” (9.5mm) lead length, P.C.B. mounted
*JEDEC registered values
Document Number 88511
27-Feb-02
www.vishay.com
1
1N4942GP thru 1N4942GP
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
Fig. 1 — Forward Current
Fig. 2 — Maximum Non-Repetitive
Peak Forward Surge Current
Derating Curves
1.0
30
25
20
15
10
5
TJ = TJ max.
8.3ms Single Half Sine-Wave
(JEDEC Method)
Resistive or
Inductive Load
0.75
0.5
0.25
0.375" (9.5mm) Lead Length
0
1
10
100
25
50
75
100
125
150
175
Ambient Temperature (°C)
Number of Cycles at 60 HZ
Fig. 3 — Typical Instantaneous
Forward Characteristics
Fig. 4 — Typical Reverse
Characteristics
10
1
20
10
TJ = 125°C
TJ = 75°C
TJ = 25°C
Pulse Width = 300µs
1% Duty Cycle
1
0.1
0.1
TJ = 25°C
0.01
0.01
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
20
40
60
80
100
Instantaneous Forward Voltage (V)
Percent of Rated Peak Reverse Voltage (%)
Fig. 6 — Typical Transient
Thermal Impedance
Fig. 5 — Typical Junction Capacitance
100
30
10
T = 25°C
J
f = 1.0MHZ
Vsig = 50mVp-p
10
1
0.1
1
1
10
100
0.01
0.1
1
10
100
Reverse Voltage (V)
t, Pulse Duration (sec.)
www.vishay.com
2
Document Number 88511
27-Feb-02
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