1N4448W [VISHAY]
Small Signal Diodes; 小信号二极管
| 型号： | 1N4448W |
| 厂家： | 
VISHAY |
| 描述： | Small Signal Diodes |
| 文件： | 总4页 (文件大小：143K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
1N4448W
Small Signal Diodes
FEATURES
SOD-123
Silicon Epitaxial Planar Diode
Fast switching diode.
♦
♦
♦
.022 (0.55)
Cathode Mark
This diode is also available in other case styles including:
the DO-35 case with the type designation 1N4448, the
MiniMELF case with the type designation LL4448, and
the SOT23 case with the type designation IMBD4448.
Top View
.067 (1.70)
.055 (1.40)
MECHANICAL DATA
Case: SOD-123 Plastic Case
Weight: approx. 0.01 g
min. .010 (0.25)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at
ambient temperature unless otherwise specified
25 °C
Symbol
Value
75
Unit
V
Reverse Voltage
V
V
I
R
Peak Reverse Voltage
100
V
RM
Rectified Current (Average)
Half Wave Rectification with Resist. Load
1501)
mA
0
at T
= 25 °C and f ≥ 50 Hz
amb
Surge Forward Current at t < 1 s and T = 25 °C
I
500
mA
mW
°C
j
FSM
Power Dissipation at T
= 25 °C
P
5001)
amb
tot
Junction Temperature
Storage Temperature Range
T
T
175
j
–65 to +175
°C
S
1) Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature.
4/98
1N4448W
ELECTRICAL CHARACTERISTICS
Ratings at
ambient temperature unless otherwise specified
25 °C
Symbol
Min.
Typ.
Max.
Unit
Forward Voltage
at I = 5 mA
V
F
V
F
0.62
–
–
–
0.72
1
V
V
F
at I = 10 mA
F
Leakage Current
at V = 20 V
I
I
I
–
–
–
–
–
–
25
5
50
nA
µA
µA
R
R
R
R
at V = 75 V
R
at V = 20 V, T = 150 °C
R
j
Reverse Breakdown Voltage
tested with 100 µA Pulses
V
100
–
–
–
–
4
4
V
(BR)R
Capacitance
C
–
pF
ns
tot
at V = V = 0 V
F
R
Reverse Recovery Time
from I = 10 mA to I = 1 mA, V = 6 V, R = 100
t
rr
–
F
R
R
L
Ω
Thermal Resistance Junction to Ambient Air
Recification Efficiency at f = 100 MHz, V = 2 V
R
–
–
–
3501)
–
K/W
–
thJA
η
0.45
RF
v
1) Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature.
Rectification Efficiency Measurement Circuit
RATINGS AND CHARACTERISTIC CURVES 1N4448W
1N4448W
1N4448W
1N4448W
1N4448W
RATINGS AND CHARACTERISTIC CURVES 1N4448W
1N4448W
1N4448W
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Rectifier Diode, 1 Element, 0.25A, 75V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-2
WTE
1N4448W-TP-HF
Rectifier Diode, 1 Element, 0.25A, 100V V(RRM), Silicon, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-2
MCC
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