1N1199APBF [VISHAY]

Rectifier Diode, 1 Phase, 1 Element, 12A, 50V V(RRM), Silicon, DO-203AA, DO-4, 1 PIN;


型号：	1N1199APBF
厂家：	VISHAY
描述：	Rectifier Diode, 1 Phase, 1 Element, 12A, 50V V(RRM), Silicon, DO-203AA, DO-4, 1 PIN 整流二极管
文件：	总6页 (文件大小：152K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

1N1...A, 1N36..A Series

Vishay High Power Products

Medium Power

Silicon Rectifier Diodes, 12 A

FEATURES

• Voltage ratings from 50 to 1000 V

RoHS

• High surge capability

• Low thermal impedance

• High temperature rating

COMPLIANT

• Can be supplied as JAN and JAN-TX devices in

accordance with MIL-S-19500/260

DO-203AA (DO-4)

• RoHS compliant

PRODUCT SUMMARY

I_F(AV)

12 A

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER

TEST CONDITIONS

VALUES

12 ⁽¹⁾

150 ⁽¹⁾

UNITS

I_F(AV)

T_C

°C

50 Hz

60 Hz

50 Hz

60 Hz

230

240 ⁽¹⁾

I_FSM

I²t

260

A²s

240

T_C

- 65 to 200

50 to 1000 ⁽¹⁾

°C

V_RRM

Range

Note

(1)

JEDEC registered values

ELECTRICAL SPECIFICATIONS

VOLTAGE RATINGS

V_RRM, MAXIMUM

REPETITIVE PEAK

REVERSE VOLTAGE

_RSM, MAXIMUM

_R(RMS), MAXIMUM RMS

REVERSE VOLTAGE

_RM, MAXIMUM DIRECT

REVERSE VOLTAGE

NON-REPETITIVE PEAK

REVERSE VOLTAGE

TYPE NUMBER ⁽²⁾

_C= - 65 °C TO 200 °C

T_C= - 65 °C TO 200 °C

100 ⁽¹⁾

T_C= - 65 °C TO 200 °C

50 ⁽¹⁾

1N1199A

1N1200A

1N1201A

1N1202A

1N1203A

1N1204A

1N1205A

1N1206A

1N3670A

1N3671A

1N3672A

1N3673A

50 ⁽¹⁾

100 ⁽¹⁾

150 ⁽¹⁾

200 ⁽¹⁾

300 ⁽¹⁾

400 ⁽¹⁾

500 ⁽¹⁾

600 ⁽¹⁾

35 ⁽¹⁾

70 ⁽¹⁾

105 ⁽¹⁾

140 ⁽¹⁾

210 ⁽¹⁾

280 ⁽¹⁾

350 ⁽¹⁾

420 ⁽¹⁾

490

200 ⁽¹⁾

300 ⁽¹⁾

350 ⁽¹⁾

450 ⁽¹⁾

600 ⁽¹⁾

700 ⁽¹⁾

800 ⁽¹⁾

900 ⁽¹⁾

100 ⁽¹⁾

150 ⁽¹⁾

200 ⁽¹⁾

300 ⁽¹⁾

400 ⁽¹⁾

500 ⁽¹⁾

600 ⁽¹⁾

700 ⁽¹⁾

800 ⁽¹⁾

900 ⁽¹⁾

1000 ⁽¹⁾

560

1000 ⁽¹⁾

1100 ⁽¹⁾

1200 ⁽¹⁾

800 ⁽¹⁾

900 ⁽¹⁾

1000 ⁽¹⁾

630

700

Notes

(1)

JEDEC registered values

Basic part number indicates cathode to case; for anode to case, add “R” to part number, e.g., 1N1199RA

(2)

Document Number: 93493

Revision: 24-Jun-08

For technical questions, contact: ind-modules@vishay.com

www.vishay.com

1N1...A, 1N36..A Series

Medium Power

Silicon Rectifier Diodes, 12 A

Vishay High Power Products

FORWARD CONDUCTION

PARAMETER

SYMBOL

TEST CONDITIONS

180° sinusoidal conduction

VALUES

12 ⁽¹⁾

UNITS

Maximum average forward current

at case temperature

I_F(AV)

150 ⁽¹⁾

°C

Half cycle 50 Hz sine wave

or 6 ms rectangular pulse

230

240 ⁽¹⁾

275

Following any rated load

condition and with rated

V_RRMapplied

Half cycle 60 Hz sine wave

or 5 ms rectangular pulse

Maximum peak one cycle

non-repetitive surge current

I_FSM

Half cycle 50 Hz sine wave

or 6 ms rectangular pulse

Following any rated load

condition and with V_RRM

applied following surge = 0

Half cycle 60 Hz sine wave

or 5 ms rectangular pulse

285

With rated V_RRMapplied

following surge,

initial T_J= 200 °C

t = 10 ms

t = 8.3 ms

260

240

Maximum I²t for fusing

I²t

A²s

Maximum I²t for individual

device fusing

With V_RRM= 0 following

surge, initial T_J= 200 °C

t = 10 ms

t = 8.3 ms

370

340

Maximum I²√t for individual

device fusing

I²√t ⁽²⁾

t = 0.1 to 10 ms, V_RRM= 0 following surge

I_F(AV)= 12 A (38 A peak), T_C= 25 °C

3715

A²√s

Maximum forward voltage drop

V_RRM= 50

V_FM

1.35 ⁽¹⁾

3.0 ⁽¹⁾

2.5 ⁽¹⁾

2.25 ⁽¹⁾

2.0 ⁽¹⁾

1.75 ⁽¹⁾

1.5 ⁽¹⁾

1.25 ⁽¹⁾

1.0 ⁽¹⁾

0.9 ⁽¹⁾

0.8 ⁽¹⁾

0.7 ⁽¹⁾

0.6 ⁽¹⁾

V_RRM= 100

V_RRM= 150

V_RRM= 200

V_RRM= 300

V_RRM= 400

V_RRM= 500

V_RRM= 600

V_RRM= 700

V_RRM= 800

V_RRM= 900

V_RRM= 1000

Maximum average

reverse current

(3)

I_R(AV)

Maximum rated I_F(AV)and T_C

Notes

(1)

(2)

(3)

JEDEC registered values

I²t for time t_x= I²√t x √t_x

Maximum peak reverse current (I_RM) under same conditions ≈ 2 x rated I_R(AV)

www.vishay.com

For technical questions, contact: ind-modules@vishay.com

Document Number: 93493

Revision: 24-Jun-08

1N1...A, 1N36..A Series

Medium Power

Silicon Rectifier Diodes, 12 A

Vishay High Power Products

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum operating case and

storage temperature range

T_C, T_Stg

- 65 to 200 ⁽¹⁾

°C

Maximum internal thermal

resistance, junction to case

R_thJC

DC operation

2.0 ⁽¹⁾

0.5

°C/W

Thermal resistance,

case to sink

R_thCS

Mounting surface, smooth, flat and greased

Torque applied to nut; non-lubricated threads

minimum

1.36 (12)

1.69 (15)

1.07 (9.45)

1.30 (11.55)

1.17 (10.35)

1.43 (12.65)

7.0

maximum

minimum

maximum

minimum

maximum

N · m

(lbf · in)

Mounting torque

Torque applied to nut; lubricated threads

Torque applied to device case; lubricated threads

Approximate weight

Case style

0.25

oz.

JEDEC

DO-203AA (DO-4)

Note

(1)

JEDEC registered values

Document Number: 93493

Revision: 24-Jun-08

For technical questions, contact: ind-modules@vishay.com

www.vishay.com

1N1...A, 1N36..A Series

Medium Power

Silicon Rectifier Diodes, 12 A

Vishay High Power Products

Fig. 1 - Average Forward Current vs.

Maximum Allowable Case Temperature

Fig. 4 - Maximum Forward Voltage vs. Forward Current

Fig. 2 - Maximum Low Level Forward Power Loss vs.

Average Forward Current

Fig. 5 - Maximum Transient Thermal Impedance,

Junction to Case vs. Pulse Duration

Fig. 3 - Maximum High Level Forward Power Loss vs.

Average Forward Current

Fig. 6 - Maximum Non-Repetitive 50 Hz Surge Current vs.

Number of Current Pulses

LINKS TO RELATED DOCUMENTS

http://www.vishay.com/doc?95311

Dimensions

www.vishay.com

For technical questions, contact: ind-modules@vishay.com

Document Number: 93493

Revision: 24-Jun-08

Outline Dimensions

Vishay Semiconductors

DO-203AA (DO-4)

DIMENSIONS in millimeters (inches)

0.8 0.1

(0.03 0.004)

3.30 (0.13)

4.00 (0.16)

2^{+ 0.3}

(0.08 ^{+ 0.01}

)

5.50 (0.22) MIN.

R 0.40

R (0.02)

Ø 1.80 0.20

(Ø 0.07 0.01)

20.30 (0.80) MAX.

Ø 6.8 (0.27)

10.20 (0.40)

MAX.

3.50 (0.14)

11.50 (0.45)

10.70 (0.42)

10/32" UNF-2A

For metric devices: M5 x 0.8

11 (0.43)

Document Number: 95311

Revision: 30-Jun-08

For technical questions, contact: indmodules@vishay.com

www.vishay.com

Legal Disclaimer Notice

www.vishay.com

Vishay

Disclaimer

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE

RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,

“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other

disclosure relating to any product.

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consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular

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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical

requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements

about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular

product with the properties described in the product specification is suitable for use in a particular application. Parameters

provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All

operating parameters, including typical parameters, must be validated for each customer application by the customer’s

technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,

including but not limited to the warranty expressed therein.

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining

applications or for any other application in which the failure of the Vishay product could result in personal injury or death.

Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree

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Material Category Policy

Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the

definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council

of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment

(EEE) - recast, unless otherwise specified as non-compliant.

Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that

all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.

Revision: 12-Mar-12

Document Number: 91000

1N1199APBF [VISHAY]

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