1N1188RA [VISHAY]
Power Silicon Rectifier Diodes, 35 A, 40 A, 60 A; 电源硅整流二极管， 35 A， 40 A ， 60 A
| 型号： | 1N1188RA |
| 厂家： | 
VISHAY |
| 描述： | Power Silicon Rectifier Diodes, 35 A, 40 A, 60 A |
| 文件： | 总8页 (文件大小：531K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
1N1183, 1N3765, 1N1183A, 1N2128A Series
www.vishay.com
Vishay Semiconductors
Power Silicon Rectifier Diodes,
35 A, 40 A, 60 A
DESCRIPTION/FEATURES
• Low leakage current series
• Good surge current capability up to 1000 A
• Can be supplied to meet stringent military,
aerospace, and other high reliability
requirements
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
DO-203AB (DO-5)
PRODUCT SUMMARY
IF(AV)
35 A, 40 A, 60 A
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
1N1183
35 (1)
140 (1)
1N3765
35 (1)
140 (1)
1N1183A
40 (1)
150 (1)
1N2128A
60 (1)
140 (1)
UNITS
A
IF(AV)
TC
°C
50 Hz
60 Hz
50 Hz
60 Hz
480
500 (1)
1140
380
400 (1)
730
765
800 (1)
2900
860
900 (1)
3700
IFSM
I2t
A
A2s
1040
670
2650
3400
I2t
VRRM
16 100
50 to 600 (1)
10 300
700 to 1000 (1)
41 000
50 to 600 (1)
52 500
50 to 600 (1)
A2s
V
Range
Note
(1)
JEDEC registered values
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
VRRM, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
RM, MAXIMUM DIRECT
REVERSE VOLTAGE
TYPE NUMBER
(TJ = - 65 °C TO 200 °C (2)
V
)
(TJ = - 65 °C TO 200 °C (2)
V
)
1N1183
1N1184
1N1185
1N1186
1N1187
1N1188
1N1189
1N1190
1N3765
1N3766
1N3767
1N3768
1N1183A
1N1184A
1N1185A
1N1186A
1N1187A
1N1188A
1N1189A
1N1190A
1N2128A
50 (1)
100 (1)
150 (1)
200 (1)
300 (1)
400 (1)
500 (1)
600 (1)
700 (1)
800 (1)
900 (1)
1000 (1)
50 (1)
100 (1)
150 (1)
200 (1)
300 (1)
400 (1)
500 (1)
600 (1)
700 (1)
800 (1)
900 (1)
1000 (1)
1N2129A
1N2130A
1N2131A
1N2133A
1N2135A
1N2137A
1N2138A
Notes
(1)
JEDEC registered values
For 1N1183 Series and 1N3765 Series TC = - 65 °C to 190 °C
Basic type number indicates cathode to case. For anode to case, add “R” to part number, e.g., 1N1188R, 1N3766R, 1N1186RA, 1N2135RA
(2)
•
Revision: 04-Dec-12
Document Number: 93492
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1N1183, 1N3765, 1N1183A, 1N2128A Series
www.vishay.com
Vishay Semiconductors
FORWARD CONDUCTION
PARAMETER
SYMBOL
TEST CONDITIONS
1-phase operation,
1N1183 1N3765 1N1183A 1N2128A UNITS
35 (1)
35 (1)
40 (1)
60 (1)
A
Maximum average forward current
at case temperature
IF(AV)
180° sinusoidal conduction
140 (1)
140 (1)
150 (1)
140 (1)
°C
Half cycle 50 Hz
sine wave or 6 ms
rectangular pulse
Following any
rated load
480
500 (1)
570
380
400 (1)
455
765
800 (1)
910
860
900 (1)
1000
1050
condition and
with rated
Half cycle 60 Hz
sine wave or 5 ms
rectangular pulse
V
RRM applied
Maximum peak one cycle
non-repetitive surge current
IFSM
A
Half cycle 50 Hz
sine wave or 6 ms
rectangular pulse
Following any
rated load
condition and
with ½ VRRM
appliedfollowing
surge = 0
Half cycle 60 Hz
sine wave or 5 ms
rectangular pulse
595
475
950
With rated VRRM
appliedfollowing
surge, initial
t = 10 ms
t = 8.3 ms
t = 10 ms
1140
1040
730
670
2900
2650
3700
3400
Maximum I2t for fusing
TJ = TJ maximum
I2t
A2s
With VRRM = 0
following surge,
initial
1610
1030
940
4150
5250
Maximum I2t for individual
device fusing
t = 8.3 ms
1470
3750
4750
TJ = TJ maximum
Maximum I2t for individual
device fusing
t = 0.1 to 10 ms,
VRRM = 0 following surge
I2t (2)
16 100
10 300
41 500
52 500
A2s
1.7 (1)
1.8 (1)
110
1.3 (1)
1.3 (1)
V
A
Maximum peak forward voltage
at maximum forward current (IFM
VFM
TJ = 25 °C
)
110
126
188
VRRM = 700
VRRM = 800
VRRM = 900
VRRM = 1000
-
5.0 (1)
4.0 (1)
3.0 (1)
2.0 (1)
-
-
-
-
-
-
Maximum rated IF(AV) and TC
Maximum average
reverse current
IR(AV)
-
-
-
-
-
-
mA
Maximum rated IF(AV), VRRM and TC
10 (1)
2.5 (1)
10 (1)
Notes
(1)
JEDEC registered values
I2t for time tx = I2t x tx
(2)
Revision: 04-Dec-12
Document Number: 93492
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1N1183, 1N3765, 1N1183A, 1N2128A Series
www.vishay.com
Vishay Semiconductors
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
1N1183 1N3765 1N1183A 1N2128A UNITS
Maximum operating
TC
- 65 to 190 (1)
- 65 to 175 (1)
1.00 (1)
- 65 to 200
- 65 to 200
case temperature range
°C
Maximum storage
temperature range
TStg
RthJC
RthCS
Maximum internal thermal
resistance, junction to case
DC operation
1.1 (1)
0.25
0.65 (1)
°C/W
Thermal resistance,
case to sink
Mounting surface, smooth, flat and greased
Not lubricated thread, tighting on nut (2)
Lubricated thread, tighting on nut (2)
3.4 (30)
2.3 (20)
4.2 (37)
3.2 (28)
17
Maximum allowable
mounting torque
(+ 0 %, - 10 %)
N · m
(lbf · in)
Not lubricated thread, tighting on hexagon (3)
Lubricated thread, tighting on hexagon (3)
g
Approximate weight
Case style
0.6
oz.
JEDEC
DO-203AB (DO-5)
Notes
(1)
(2)
(3)
JEDEC registered values
Recommended for pass-through holes
Recommended for holed threaded heatsinks
Fig. 1 - Maximum Allowable Case Temperature vs.
Average Forward Current, 1N1183 and 1N3765 Series
Fig. 2 - Typical Low Level Forward Power Loss vs.
Average Forward Current (Sinusoidal Current Waveform),
1N1183 and 1N3765 Series
Revision: 04-Dec-12
Document Number: 93492
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1N1183, 1N3765, 1N1183A, 1N2128A Series
www.vishay.com
Vishay Semiconductors
Fig. 3 - Typical High Level Forward Power Loss vs.
Average Forward Current (Sinusoidal Current Waveform),
1N1183 and 1N3765 Series
Fig. 6 - Average Forward Current vs. Maximum Allowable Case
Temperature, 1N1183A Series
Fig. 4 - Typical Forward Voltage vs. Forward Current,
1N1183 and 1N3765 Series
Fig. 7 - Maximum Low Level Forward Power Loss vs.
Average Forward Current, 1N1183A Series
Fig. 5 - Maximum Non-Repetitive Surge Current vs.
Number of Current Pulses, 1N1183 and 1N3765 Series
Fig. 8 - Maximum High Level Forward Power Loss vs.
Average Forward Current, 1N1183A Series
Revision: 04-Dec-12
Document Number: 93492
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1N1183, 1N3765, 1N1183A, 1N2128A Series
www.vishay.com
Vishay Semiconductors
Fig. 12 - Maximum Allowable Case Temperature vs.
Average Forward Current, 1N2128A Series
Fig. 9 - Maximum Forward Voltage vs. Forward Current,
1N1183A Series
Fig. 13 - Maximum Low Level Forward Power Loss vs.
Average Forward Current, 1N2128A Series
Fig. 10 - Maximum Non-Repetitive Surge Current vs.
Number of Current Pulses, 1N1183A Series
Fig. 14 - Maximum High Level Forward Power Loss vs.
Average Forward Current, 1N2128A Series
Fig. 11 - Maximum Non-Repetitive Surge Current vs.
Number of Current Pulses, 1N2128A Series
Revision: 04-Dec-12
Document Number: 93492
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1N1183, 1N3765, 1N1183A, 1N2128A Series
www.vishay.com
Vishay Semiconductors
Fig. 15 - Maximum Forward Voltage vs. Forward Current,
1N2128A Series
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95360
Revision: 04-Dec-12
Document Number: 93492
6
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
DO-203AB (DO-5) for
1N1183, 1N3765, 1N1183A, 1N2128A, 1N3208 Series
DIMENSIONS in millimeters (inches)
Ø 14.6 (0.57)
6.1 (0.24)
7.0 (0.28)
1.03 (0.04)
MAX.
Ø 4.10 (0.16)
Ø 3.80 (0.15)
4 (0.16) MIN.
25.4 (1.0) MAX.
10.8 (0.43)
11.4 (0.45)
10.7 (0.42)
11.5 (0.45)
1/4" 28UNF-2A
for metric devices: M6 x 1
17.40 (0.68) MIN.
Across flats
1.0 (0.04)
MAX.
Document Number: 95360
Revision: 29-Sep-08
For technical questions, contact: indmodules@vishay.com
www.vishay.com
1
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Revision: 02-Oct-12
Document Number: 91000
1
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