1348380 [VISHAY]
Standard Avalanche Sinterglass Diode; 标准的雪崩二极管Sinterglass
| 型号： | 1348380 |
| 厂家： | 
VISHAY |
| 描述： | Standard Avalanche Sinterglass Diode |
| 文件： | 总4页 (文件大小：120K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BYW52, BYW53, BYW54, BYW55, BYW56
Vishay Semiconductors
Standard Avalanche Sinterglass Diode
FEATURES
• Controlled avalanche characteristics
• Glass passivated junction
• Hermetically sealed package
• Low reverse current
• High surge current loading
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
949539
• Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
Case: SOD-57
APPLICATIONS
• Rectification, general purpose
Terminals: plated axial leads, solderable per MIL-STD-750,
method 2026
Polarity: color band denotes cathode end
Mounting position: any
Weight: approx. 369 mg
PARTS TABLE
PART
TYPE DIFFERENTIATION
PACKAGE
SOD-57
SOD-57
SOD-57
SOD-57
SOD-57
BYW52
BYW53
BYW54
BYW55
BYW56
VR = 200 V; IFAV = 2 A
VR = 400 V; IFAV = 2 A
VR = 600 V; IFAV = 2 A
VR = 800 V; IFAV = 2 A
V
R = 1000 V; IFAV = 2 A
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
See electrical characteristics
tp = 10 ms, half sine wave
PART
BYW52
BYW53
BYW54
BYW55
BYW56
SYMBOL
VALUE
200
400
600
800
1000
50
UNIT
V
V
V
V
V
V
R = VRRM
R = VRRM
R = VRRM
R = VRRM
R = VRRM
IFSM
V
Reverse voltage = repetitive peak
reverse voltage
V
V
V
Peak forward surge current
Repetitive peak forward current
Average forward current
A
IFRM
12
A
ϕ = 180 °
IFAV
2
A
Pulse avalanche peak power
tp = 20 μs half sine wave, Tj = 175 °C
PR
1000
W
Pulse energy in avalanche mode, non
repetitive (inductive load switch off)
i2t-rating
l
(BR)R = 1 A, Tj = 175 °C
ER
i2t
20
mJ
A2s
°C
8
Junction and storage temperature
range
Tj = Tstg
- 55 to + 175
MAXIMUM THERMAL RESISTANCE (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
Lead length l = 10 mm, TL = constant
On PC board with spacing 25 mm
RthJA
45
K/W
K/W
Junction ambient
RthJA
100
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For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 86049
Rev. 1.7, 25-Aug-10
BYW52, BYW53, BYW54, BYW55, BYW56
Standard Avalanche Sinterglass
Vishay Semiconductors
Diode
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX
UNIT
V
Forward voltage
IF = 1 A
VF
IR
-
-
-
-
-
-
-
-
0.9
0.1
5
1
1
VR = VRRM
μA
μA
V
Reverse current
VR = VRRM, Tj = 100 °C
IR = 100 μA, tp/T = 0.01, tp = 0.3 ms
VR = 4 V, f = 1 MHz
IR
10
1600
-
Breakdown voltage
Diode capacitance
V(BR)
CD
trr
-
18
-
pF
μs
IF = 0.5 A, IR = 1 A, iR = 0.25 A
IF = 1 A, dI/dt = 5 A/μs, VR = 50 V
lF = 1 A, dI/dt = 5 A/μs
4
Reverse recovery time
trr
-
4
μs
Reverse recovery charge
Qrr
-
200
nC
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
120
100
80
60
40
20
0
2.5
2.0
1.5
1.0
0.5
0.0
l
l
VR = VRRM
half sine wave
RthJA = 45 K/W
l = 10 mm
TL = constant
RthJA = 100 K/W
PCB: d = 25 mm
0
5
10
15
20
25
30
0
20 40 60 80 100 120 140 160 180
Tamb - Ambient Temperature (°C)
949101
l - Lead Length (mm)
16351
Fig. 1 - Typ. Thermal Resistance vs. Lead Length
Fig. 3 - Max. Average Forward Current vs.
Ambient Temperature
10
1000
VR = VRRM
Tj = 175 °C
1
100
Tj = 25 °C
0.1
10
1
0.01
0.001
0.0
0.4
0.8
1.2
1.6
25
50
75
100
125
150
175
VF - Forward Voltage (V)
Tj - Junction Temperature (°C)
16352
16350
Fig. 4 - Reverse Current vs. Junction Temperature
Fig. 2 - Forward Current vs. Forward Voltage
Document Number: 86049
Rev. 1.7, 25-Aug-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
159
BYW52, BYW53, BYW54, BYW55, BYW56
Standard Avalanche Sinterglass
Vishay Semiconductors
Diode
400
40
VR = VRRM
350
300
250
200
f = 1 MHz
35
30
25
20
PR - Limit at 100 % VR
150
15
PR - Limit at 80 % VR
100
50
0
10
5
0
25
50
75
100
125
150
175
0.1
1
10
100
16353
Tj - Junction Temperature (°C)
VR - Reverse Voltage (V)
16354
Fig. 5 - Max. Reverse Power Dissipation vs. Junction Temperature
Fig. 6 - Diode Capacitance vs. Reverse Voltage
1000
VRRM = 1000 V, RthJA = 100 K/W
100
tp/T = 0.5
Tamb = 25 °C
Tamb = 45 °C
tp/T = 0.2
tp/T = 0.1
10
tp/T = 0.05
Tamb = 60 °C
tp/T = 0.02
Tamb = 70 °C
Tamb = 100 °C
tp/T = 0.01
1
10-5
10-4
10-3
10-2
10-1
100
101
1
10
100
IFRM - Repetitive Peak
Forward Current (A)
tp - Pulse Length (s)
94 9178
Fig. 7 - Thermal Response
PACKAGE DIMENSIONS in millimeters (inches): SOD-57
26 (1.024) min.
26 (1.024) min.
4 (0.157) max.
20543
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For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 86049
Rev. 1.7, 25-Aug-10
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Document Number: 91000
Revision: 11-Mar-11
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