12FL10MS02
更新时间:2024-09-18 17:21:44
品牌:VISHAY
描述:Rectifier Diode, 1 Phase, 1 Element, 12A, 100V V(RRM), Silicon, DO-203AA, ROHS COMPLIANT, DO-4, 1 PIN
12FL10MS02 概述
Rectifier Diode, 1 Phase, 1 Element, 12A, 100V V(RRM), Silicon, DO-203AA, ROHS COMPLIANT, DO-4, 1 PIN 整流二极管
12FL10MS02 规格参数
是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 零件包装代码: | DO-4 |
包装说明: | ROHS COMPLIANT, DO-4, 1 PIN | 针数: | 1 |
Reach Compliance Code: | not_compliant | HTS代码: | 8541.10.00.80 |
风险等级: | 5.49 | 其他特性: | FREE WHEELING DIODE |
应用: | FAST RECOVERY | 外壳连接: | CATHODE |
配置: | SINGLE | 二极管元件材料: | SILICON |
二极管类型: | RECTIFIER DIODE | 最大正向电压 (VF): | 1.4 V |
JEDEC-95代码: | DO-203AA | JESD-30 代码: | O-MUPM-D1 |
最大非重复峰值正向电流: | 180 A | 元件数量: | 1 |
相数: | 1 | 端子数量: | 1 |
最高工作温度: | 150 °C | 最低工作温度: | -65 °C |
最大输出电流: | 12 A | 封装主体材料: | METAL |
封装形状: | ROUND | 封装形式: | POST/STUD MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 认证状态: | Not Qualified |
最大重复峰值反向电压: | 100 V | 最大反向恢复时间: | 0.2 µs |
子类别: | Rectifier Diodes | 表面贴装: | NO |
端子形式: | SOLDER LUG | 端子位置: | UPPER |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | Base Number Matches: | 1 |
12FL10MS02 数据手册
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PDF下载6FL(R), 12FL(R), 16FL(R) Series
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Vishay Semiconductors
Fast Recovery Diodes
(Stud Version), 6 A, 12 A, 16 A
FEATURES
• Short reverse recovery time
• Low stored charge
• Wide current range
• Excellent surge capabilities
• Standard JEDEC types
• Stud cathode and stud anode versions
• Fully characterized reverse recovery conditions
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
DO-203AA (DO-4)
TYPICAL APPLICATIONS
• DC power supplies
• Inverters
PRODUCT SUMMARY
• Converters
IF(AV)
6 A, 12 A, 16 A
• Choppers
• Ultrasonic systems
• Freewheeling diodes
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
6FL..
12FL..
16FL..
16
UNITS
IF(AV)
TC = 100 °C
6
12
A
A
IF(RMS)
9.5
110
115
60
19
25
50 Hz
60 Hz
50 Hz
60 Hz
145
180
190
160
150
2290
IFSM
A
150
103
I2t
A2s
55
94
I2t
VRRM
trr
1452
1452
50 to 1000
I2s
V
Range
Range
See Recovery Characteristics table
- 65 to 150
ns
°C
TJ
Revision: 08-Apr-13
Document Number: 93138
1
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
6FL(R), 12FL(R), 16FL(R) Series
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ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
VRRM, MAXIMUM
REPETITIVE PEAK AND
OFF-STATE VOLTAGE
V
VRSM, MAXIMUM
I
RRM MAXIMUM IRRM MAXIMUM IRRM MAXIMUM
TYPE
NUMBER
VOLTAGE
CODE
NON-REPETITIVE
PEAK VOLTAGE
V
AT TJ = 25 °C
μA
AT TJ = 100 °C
mA
AT TJ = 150 °C
mA
5
10
20
40
60
80
100
50
100
200
400
600
800
1000
75
150
275
500
725
950
1250
6FL..
12FL..
16FL..
50
-
6.0
FORWARD CONDUCTION
PARAMETER
SYMBOL
IF(AV)
TEST CONDITIONS
6FL..
12FL..
12 (1)
100
16FL..
UNITS
A
6
16
100
25
Maximum average forward current
at case temperature
180° conduction, half sine wave
DC
100
9.5
130
135
110
115
86
°C
Maximum RMS current
IF(RMS)
19
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
170
215
225
180
190
230
210
160
150
2290
1.4
No voltage
reapplied
180
A
Maximum peak, one-cycle
non-repetitive forward current
IFSM
145
100 % VRRM
reapplied
Sinusoidal
half wave,
initial
150 (1)
145
No voltage
reapplied
TJ = 150 °C
78
130
Maximum I2t for fusing
I2t
A2s
60
103
100 % VRRM
reapplied
55
94
Maximum I2t for fusing
I2t
t = 0.1 ms to 10 ms, no voltage reapplied
856
1.4
1.5
1452
1.4 (1)
1.5 (1)
A2s
TJ = 25 °C; IF = Rated IF(AV) (DC)
Maximum forward voltage drop
VFM
V
T
C = 100 °C; IFM = x rated IF(AV)
1.5
Note
(1)
JEDEC registered values
Revision: 08-Apr-13
Document Number: 93138
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RECOVERY CHARACTERISTICS
6FL..
12FL..
PARAMETER
SYMBOL
TEST CONDITIONS
UNITS
16FL..
S02
S05
TJ = 25 °C, IF = 1 A to VR = 30 V,
dIF/dt = 100 A/μs
-
-
Maximum reverse
recovery time
trr
ns
-
IFM
TJ = 25 °C, dIF/dt = 25 A/μs,
200
500
trr
IFM = x rated IF(AV)
Maximum peak
recovery current
t
dir
dt
IRM(REC)
IFM = x rated IF(AV)
-
Qrr
TJ = 25 °C, IF = 1 A to VR = 30 V,
dIF/dt = 100 A/μs
IRM(REC)
-
-
-
-
Maximum reverse
recovery charge
Qrr
nC
TJ = 25 °C, dIF/dt = 25 A/μs,
IFM = x rated IF(AV)
Note
(1)
JEDEC registered values
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
6FL..
12FL..
- 65 to 150
- 65 to 175
2.0
16FL..
UNITS
Maximum junction operating
temperature range
TJ
°C
Maximum storage temperature range
TStg
Maximum thermal resistance,
junction to case
RthJC
DC operation
2.5
1.6
°C/W
Maximum thermal resistance,
case to heatsink
Mounting surface, smooth,
flat and greased
RthCS
0.5
1.5 + 0 - 10 %
(13)
1.2 + 0 - 10 %
(10)
Not lubricated threads
Lubricated threads
N · m
(lbf · in)
Allowable mounting torque
7
g
Approximate weight
Case style
0.25
oz.
JEDEC
DO-203AA (DO-4)
Revision: 08-Apr-13
Document Number: 93138
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RthJC CONDUCTION
6FL..
12FL..
16FL..
6FL..
12FL..
16FL..
CONDUCTION ANGLE
TEST CONDITIONS
UNITS
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
180°
120°
60°
0.58
0.60
1.28
2.20
0.46
0.48
1.02
1.76
0.37
0.39
0.82
1.41
0.33
0.58
1.28
2.20
0.26
0.46
1.02
1.76
0.21
0.37
0.82
1.41
TJ = 150 °C
K/W
30°
Note
•
The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
160
150
160
150
140
140
DC
DC
130
120
110
100
90
130
120
110
100
90
180 °C
180 °C
180 °C
120 °C
60 °C
180 °C
120 °C
60 °C
80
80
70
70
60
60
0
5
10
15
20
25
30
0
1
2
3
4
5
6
7
8
9
10
Average Forward Current (A)
Average Forward Current (A)
Fig. 1 - Average Forward Current vs.
Fig. 3 - Average Forward Current vs.
Maximum Allowable Case Temperature, 6FL Series
Maximum Allowable Case Temperature, 16FL Series
160
150
140
130
IF
dIF
dt
IFM
I
DC
trr
120
t
110
%IRM(REC)
100
180 °C
Qrr
IRM(REC)
90
80
70
60
180 °C
120 °C
60 °C
IF, IFM - Peak forward current prior to commutation
-dIF/dt - Rate of fall of forward current
RM(REC) - Peak reverse recovery current
trr - Reverse recovery time
Qrr - Reverse recovered charge
I
0
2
4
6
8
10 12 14 16 18 20
Average Forward Current (A)
Fig. 2 - Average Forward Current vs.
Fig. 4 - Reverse Recovery Time Test Waveform
Maximum Allowable Case Temperature, 12FL Series
Revision: 08-Apr-13
Document Number: 93138
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10
6FL...
9
8
7
6
5
4
3
2
1
0
TJ = 150 °C
Ø = 180°
120°
60°
30°
180°
120°
60°
0.58
0.60
1.28
2.20
RMS limit
Ø
Conduction angle
30°
0
0
0
1
2
3
4
5
6
10 20 30 40 50 60 70 80 90 100
Average Forward Current (A)
Maximum Allowable
Ambient Temperature (°C)
Fig. 5 - Current Rating Nomogram (Sinusoidal Waveforms), 6FL Series
14
12
6FL...
TJ = 150 °C
10
8
Ø = 180°
120°
60°
30°
DC
DC
180°
120°
60°
0
6
0.33
0.58
1.28
2.20
RMS limit
4
2
Ø
Conduction angle
30°
0
1
2
3
4
5
6
7
8
9
10 10 20 30 40 50 60 70 80 90 100
Average Forward Current (A)
Maximum Allowable
Ambient Temperature (°C)
Fig. 6 - Current Rating Nomogram (Rectangular Waveforms), 6FL Series
20
18
16
14
12
10
8
12FL...
TJ = 150 °C
Ø = 180°
120°
60°
30°
180°
120°
60°
0.46
0.48
1.02
1.76
RMS limit
6
4
Ø
Conduction angle
2
30°
0
1
2
3
4
5
6
7
8
9
10 11 12 10 20 30 40 50 60 70 80 90 100
Average Forward Current (A)
Maximum Allowable
Ambient Temperature (°C)
Fig. 7 - Current Rating Nomogram (Sinusoidal Waveforms), 12FL Series
Revision: 08-Apr-13
Document Number: 93138
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30
12FL...
TJ = 150 °C
25
Ø = 180°
120°
60°
30°
20
15
10
DC
180°
120°
60°
0
DC
0.26
0.46
1.02
1.76
RMS limit
5
0
Ø
Conduction angle
30°
0
2
4
6
8
10 12 14 16 18 20 10 20 30 40 50 60 70 80 90 100
Average Forward Current (A)
Maximum Allowable
Ambient Temperature (°C)
Fig. 8 - Current Rating Nomogram (Rectangular Waveforms), 12FL Series
25
20
15
10
5
16FL...
TJ = 150 °C
Ø = 180°
120°
60°
30°
180°
120°
60°
0.37
0.39
0.82
1.41
RMS limit
Ø
Conduction angle
30°
0
0
2
4
6
8
10
12
14
16 10 20 30 40 50 60 70 80 90 100
Average Forward Current (A)
Maximum Allowable
Ambient Temperature (°C)
Fig. 9 - Current Rating Nomogram (Sinusoidal Waveforms), 16FL Series
35
30
16FL...
TJ = 150 °C
Ø = 180°
120°
25
20
60°
30°
DC
180°
120°
60°
0
15 RMS limit
0.21
0.37
0.82
1.41
DC
10
5
Ø
Conduction angle
30°
0
0
5
10
15 20
25 10 20 30 40 50 60 70 80 90 100
Average Forward Current (A)
Maximum Allowable
Ambient Temperature (°C)
Fig. 10 - Current Rating Nomogram (Rectangular Waveforms), 16FL Series
Revision: 08-Apr-13
Document Number: 93138
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103
103
12FL...
6FL...
Ø = 180°
120°
60°
30°
Ø
102
102
10
Ø = DC
180°
120°
60°
Ø
10
1
30°
TJ = 150 °C
TJ = 25 °C
TJ = 150 °C
1
1
10
102
103
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Instantaneous Forward Voltage (V)
Average Forward Current (A)
Fig. 11 - Maximum Forward Voltage vs. Forward Current,
6FL Series
Fig. 14 - Maximum High Level Forward Power Loss vs. Average
Forward Current, 12FL Series
103
103
6FL...
16FL..
Ø = 180°
120°
60°
30°
Ø
102
102
Ø = DC
180°
120°
60°
TJ = 150 °C
Ø
10
10
1
30°
TJ = 25 °C
TJ = 150 °C
1
1
10
102
103
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Average Forward Current (A)
Instantaneous Forward Voltage (V)
Fig. 12 - Maximum High Level Forward Power Loss vs.
Average Forward Current, 6FL Series
Fig. 15 - Maximum Forward Voltage vs. Forward Current,
16FL Series
103
103
16FL...
Ø = 180°
12FL..
120°
60°
30°
102
102
Ø = DC
180°
120°
60°
Ø
30°
10
10
1
TJ = 150 °C
Ø
TJ = 25 °C
TJ = 150 °C
1
1
10
102
103
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Average Forward Current (A)
Instantaneous Forward Voltage (V)
Fig. 13 - Maximum Forward Voltage vs. Forward Current,
12FL Series
Fig. 16 - Maximum High Level Forward Power Loss vs.
Average Forward Current, 16FL Series
Revision: 08-Apr-13
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105
TJ = 150 °C
6FL...S05
IF = π x rated IF(AV)
600
500
400
300
12FL...S05
TJ = 150 °C
16FL...S05
104
IF = π x rated IF(AV)
200
TJ = 25 °C
6FL...
103
100
12FL...
IF = 1 A
16FL...
16FL...
60
50
40
12FL...
30
6FL...
102
6FL...S02
12FL...S02
16FL...S02
IF = 1 A
20
TJ = 25 °C
10
10
1
3
10
30
100
1
3
10
30
100
Rate of Fall of Forward Current (A/µs)
Rate of Fall of Forward Current (A/µs)
Fig.17a - Typical Reverse Recovery Time vs.
Rate of Fall of Forward Current, All Series ...S02
Fig. 18b - Typical Recovered Charge vs.
Rate of Fall of Forward Current, All Series ...S05
104
6FL...S02
12FL...S02
16FL...S02
TJ = 150 °C
6000
TJ = 150 °C
IF = π x rated IF(AV)
5000
4000
3000
103
IF = π x rated IF(AV)
2000
1000
TJ = 25 °C
102
16FL...
600
6FL...
500
12FL...
6FL...
400
300
12FL...
16FL...
IF = 1 A
6FL...S10
12FL...S10
16FL...S10
10
IF = 1 A
200
TJ = 25 °C
100
1
1
3
10
30
100
1
3
10
30
100
Rate of Fall of Forward Current (A/µs)
Rate of Fall of Forward Current (A/µs)
Fig. 17b - Typical Recovered Charge vs.
Rate of Fall of Forward Current, All Series ...S02
Fig. 19a - Typical Reverse Recovery Time vs.
Rate of Fall of Forward Current, All Series ...S10
105
6FL...S05
12FL...S05
16FL...S05
TJ = 150 °C
IF = π x rated IF(AV)
3000
104
TJ = 150 °C
IF = π x rated IF(AV)
2000
1000
600
103
16FL...
12FL...
500
400
TJ = 25 °C
6FL...
IF = 1 A
300
6FL...
IF = 1 A
TJ = 25 °C
102
200
12FL... 16FL...
30
6FL...S10
12FL...S10
16FL...S10
100
10
1
3
10
100
1
3
10
30
100
Rate of Fall of Forward Current (A/µs)
Rate of Fall of Forward Current (A/µs)
Fig. 18a - Typical Reverse Recovery Time vs.
Rate of Fall of Forward Current, All Series ...S05
Fig. 19b - Typical Recovered Charge vs.
Rate of Fall of Forward Current, All Series ...S10
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140
120
100
200
At any rated load condition and with
rated VRRM applied following surge.
At any rated load condition and with
rated VRRM applied following surge.
150
80
60
40
20
0
60 Hz
100
60 Hz
50 Hz
50 Hz
50
0
1
2
4
6
8 10
20
40 60
1
2
4
6
8 10
20
40 60
Number of Equal Amplitude Half
Cycle Current Pulses (N)
Number of Equal Amplitude Half
Cycle Current Pulses (N)
Fig. 20 - Maximum Non-Repetitive Surge Current vs.
Number of Current Pulses, 6FL Series
Fig. 22 - Maximum Non-Repetitive Surge Current vs.
Number of Current Pulses, 16FL Series
10
At any rated load condition and with
rated VRRM applied following surge.
150
100
50
6FL...
16FL...
1
60 Hz
50 Hz
12FL...
10-1
10-3
0
10-2
10-1
1
1
2
4
6
8 10
20
40 60
10
Number of Equal Amplitude Half
Cycle Current Pulses (N)
Square Wave Pulse Duration (s)
Fig. 21 - Maximum Non-Repetitive Surge Current vs.
Number of Current Pulses, 12FL Series
Fig. 23 - Maximum Transient Thermal Impedance,
Junction to Case vs. Pulse Duration, All Series
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ORDERING INFORMATION TABLE
Device code
16
F
L
R
60
M
S02
1
2
3
4
5
6
7
1
2
3
-
-
-
Current code I(AVG) = Exact current rating
F = Diode
Omit = Standard recovery diode
L = Only for fast diode
4
-
Omit = Stud forward polarity
R = Stud reverse polarity
5
6
-
-
Voltage code x 10 = VRRM (see Voltage Ratings table)
Outlines:
Omit = Stud base UNF thread
M = Stud base metric thread
7
-
trr code only for fast diode (see Recovery Characteristics table)
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95311
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Outline Dimensions
Vishay Semiconductors
DO-203AA (DO-4)
DIMENSIONS in millimeters (inches)
0.8 0.1
(0.03 0.004)
3.30 (0.13)
4.00 (0.16)
2+ 0.3
0
(0.08 + 0.01
)
0
5.50 (0.22) MIN.
R 0.40
R (0.02)
Ø 1.80 0.20
(Ø 0.07 0.01)
20.30 (0.80) MAX.
Ø 6.8 (0.27)
10.20 (0.40)
MAX.
3.50 (0.14)
11.50 (0.45)
10.70 (0.42)
10/32" UNF-2A
For metric devices: M5 x 0.8
11 (0.43)
Document Number: 95311
Revision: 30-Jun-08
For technical questions, contact: indmodules@vishay.com
www.vishay.com
1
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all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
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requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
Document Number: 91000
1
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