12F(R)120 [VISHAY]

Rectifier Diode, 1 Phase, 1 Element, 12A, 1200V V(RRM), Silicon, DO-203AA, DO-4, 1 PIN;
12F(R)120
型号: 12F(R)120
厂家: VISHAY    VISHAY
描述:

Rectifier Diode, 1 Phase, 1 Element, 12A, 1200V V(RRM), Silicon, DO-203AA, DO-4, 1 PIN

二极管
文件: 总7页 (文件大小:173K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
12F(R) Series  
Vishay Semiconductors  
www.vishay.com  
Standard Recovery Diodes  
(Stud Version), 12 A  
FEATURES  
• High surge current capability  
• Stud cathode and stud anode version  
• Wide current range  
• Types up to 1200 V VRRM  
• Designed and qualified for industrial and consumer level  
• Material categorization: For definitions of compliance  
please see www.vishay.com/doc?99912  
DO-203AA (DO-4)  
TYPICAL APPLICATIONS  
• Battery charges  
PRODUCT SUMMARY  
IF(AV)  
12 A  
• Converters  
Package  
DO-203AA (DO-4)  
Single diode  
• Power supplies  
Circuit configuration  
• Machine tool controls  
MAJOR RATINGS AND CHARACTERISTICS  
PARAMETER  
TEST CONDITIONS  
VALUES  
12  
UNITS  
A
°C  
A
IF(AV)  
TC  
144  
IF(RMS)  
19  
50 Hz  
60 Hz  
50 Hz  
60 Hz  
Range  
265  
IFSM  
A
280  
351  
I2t  
A2s  
320  
VRRM  
TJ  
100 to 1200  
-65 to 175  
V
°C  
ELECTRICAL SPECIFICATIONS  
VOLTAGE RATINGS  
VRRM, MAXIMUM  
V
RSM, MAXIMUM  
V
R(BR), MINIMUM  
AVALANCHE  
VOLTAGE  
V (1)  
IRRM MAXIMUM  
AT TJ = 175 °C  
mA  
TYPE  
NUMBER  
VOLTAGE  
CODE  
REPETITIVE PEAK  
REVERSE VOLTAGE  
V
NON-REPETITIVE  
PEAK VOLTAGE  
V
10  
20  
100  
200  
150  
275  
-
-
40  
400  
500  
500  
750  
950  
1150  
1350  
12F(R)  
60  
600  
725  
12  
80  
800  
950  
100  
120  
1000  
1200  
1200  
1400  
Note  
(1)  
Avalanche version only available from VRRM 400 V to 1200 V  
Revision: 13-Dec-13  
Document Number: 93487  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
12F(R) Series  
Vishay Semiconductors  
www.vishay.com  
FORWARD CONDUCTION  
PARAMETER  
SYMBOL  
IF(AV)  
TEST CONDITIONS  
180° conduction, half sine wave  
VALUES  
12  
UNITS  
A
°C  
A
Maximum average forward current   
at case temperature  
144  
Maximum RMS forward current  
IF(RMS)  
19  
Maximum on-repetitive peak   
reverse power  
(1)  
PR  
10 μs square pulse, TJ = TJ maximum  
7
K/W  
t = 10 ms  
265  
280  
225  
235  
351  
320  
250  
226  
3510  
0.77  
0.97  
No voltage  
reapplied  
t = 8.3 ms  
Maximum peak, one-cycle forward,  
non-repetitive surge current  
IFSM  
A
t = 10 ms  
100 % VRRM  
reapplied  
t = 8.3 ms  
t = 10 ms  
t = 8.3 ms  
t = 10 ms  
t = 8.3 ms  
Sinusoidal half wave,  
initial TJ = TJ maximum  
No voltage  
reapplied  
Maximum I2t for fusing  
I2t  
A2s  
100 % VRRM  
reapplied  
Maximum I2t for fusing  
I2t  
t = 0.1 to 10 ms, no voltage reapplied  
(16.7 % x x IF(AV) < I < x IF(AV)), TJ = TJ maximum  
(I > x IF(AV)), TJ = TJ maximum  
A2s  
Low level value of threshold voltage  
High level value of threshold voltage  
VF(TO)1  
VF(TO)2  
V
Low level value of forward   
slope resistance  
rf1  
(16.7 % x x IF(AV) < I < x IF(AV)), TJ = TJ maximum  
10.70  
m  
High level value of forward   
rf2  
(I > x IF(AV)), TJ = TJ maximum  
6.20  
1.26  
slope resistance  
Maximum forward voltage drop  
VFM  
Ipk = 38 A, TJ = 25 °C, tp = 400 μs rectangular wave  
V
Note  
(1)  
Available only for avalanche version, all other parameters the same as 12F  
THERMAL AND MECHANICAL SPECIFICATIONS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES  
UNITS  
Maximum junction operating temperature range  
Maximum storage temperature range  
Maximum thermal resistance, junction to case  
Maximum thermal resistance, case to heatsink  
TJ  
-65 to 175  
°C  
TStg  
-65 to 200  
RthJC  
RthCS  
DC operation  
2
K/W  
Mounting surface, smooth, flat and greased  
0.5  
1.5 + 0 - 10 %  
N · m  
lbf · in  
N · m  
lbf · in  
g
Not lubricated threads  
13  
Allowable mounting torque  
1.2 + 0 - 10 %  
Lubricated threads  
10  
7
Approximate weight  
Case style  
0.25  
oz.  
See dimensions - link at the end of datasheet  
DO-203AA (DO-4)  
Revision: 13-Dec-13  
Document Number: 93487  
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
12F(R) Series  
Vishay Semiconductors  
www.vishay.com  
RthJC CONDUCTION  
CONDUCTION ANGLE  
SINUSOIDAL CONDUCTION  
RECTANGULAR CONDUCTION  
TEST CONDITIONS  
UNITS  
180°  
120°  
90°  
0.33  
0.41  
0.53  
0.78  
1.28  
0.26  
0.44  
0.58  
0.81  
1.29  
TJ = TJ maximum  
K/W  
60°  
30°  
Note  
The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC  
180  
170  
160  
150  
140  
180  
170  
160  
150  
140  
130  
12F(R) Series  
R (DC) = 2.0 K/W  
12F(R) Series  
(DC) = 2.0 K/W  
R
thJC  
thJC  
Conduction Period  
Conduction Angle  
30°  
60°  
90°  
120°  
30°  
60°  
90°  
180°  
120°  
DC  
16  
Average Forward Current (A)  
Fig. 2 - Current Ratings Characteristics  
180°  
0
2
4
6
8
10 12 14  
0
4
8
12  
20  
Average Forward Current (A)  
Fig. 1 - Current Ratings Characteristics  
14  
R
6
180°  
1
K
0
/
W
K
/
W
120°  
=
8
12  
K
90°  
60°  
30°  
/
W
-
D
e
l
t
a
10  
R
RMS Limit  
8
6
4
2
0
Conduction Angle  
12F(R) Series  
T = 175°C  
J
0
2
4
6
8
10 12 104  
Maximum Allowable Ambient Temperature (°C)  
Fig. 3 - Forward Power Loss Characteristics  
25  
50  
75  
100  
Average Forward Current (A)  
Revision: 13-Dec-13  
Document Number: 93487  
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
12F(R) Series  
Vishay Semiconductors  
www.vishay.com  
20  
DC  
180°  
120°  
90°  
16  
12  
8
60°  
30°  
2
0
RMS Limit  
K
/
W
Conduction Period  
12F(R) Series  
4
T = 175°C  
J
0
0
4
8
12  
16  
200  
Maximum Allowable Ambient Temperature (°C)  
Fig. 4 - Forward Power Loss Characteristics  
25  
50  
75  
100  
Average Forward Current (A)  
1000  
100  
10  
250  
225  
200  
175  
150  
125  
100  
At Any Rated Load Condition And With  
Rated V  
Applied Following Surge.  
T = 25°C  
J
RRM  
Initial T = 175°C  
@60 Hz 0.0083 s  
@50 Hz 0.0100 s  
J
T = 175°C  
J
12F(R) Series  
12F(R) Series  
1
0
1
2
3
4
5
6
1
10  
100  
Number Of Equal Amplitude Half Cycle Current Pulses (N)  
Instantaneous Forward Voltage (V)  
Fig. 5 - Maximum Non-Repetitive Surge Current  
Fig. 7 - Forward Voltage Drop Characteristics  
275  
10  
Maximum Non Repetitive Surge Current  
Steady State Value  
Versus Pulse Train Duration.  
R
= 2.0 K/W  
250  
Initial T = 175°C  
J
thJC  
(DC Operation)  
No Voltage Reapplied  
Rated V  
Reapplied  
225  
200  
175  
150  
125  
100  
RRM  
1
12F(R) Series  
1
12F(R) Series  
0.1  
0.001  
0.01  
0.1  
Pulse Train Duration (s)  
1
0.01  
0.1  
10  
Square Wave Pulse Duration (s)  
Fig. 8 - Thermal Impedance ZthJC Characteristics  
Fig. 6 - Maximum Non-Repetitive Surge Current  
Revision: 13-Dec-13  
Document Number: 93487  
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
12F(R) Series  
Vishay Semiconductors  
www.vishay.com  
ORDERING INFORMATION TABLE  
Device code  
12  
F
R
120  
M
1
2
3
4
5
1
2
3
-
-
-
Current rating: Code = IF(AV)  
F = Standard device  
None = Stud normal polarity (cathode to stud)  
R = Stud reverse polarity (anode to stud)  
4
5
-
-
Voltage code x 10 = VRRM (see Voltage Ratings table)  
None = Stud base DO-203AA (DO-4) 10-32UNF-2A  
M = Stud base DO-203AA (DO-4) M5 x 0.8  
(not available for avalanche diodes)  
LINKS TO RELATED DOCUMENTS  
Dimensions  
www.vishay.com/doc?95311  
Revision: 13-Dec-13  
Document Number: 93487  
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
Outline Dimensions  
Vishay Semiconductors  
DO-203AA (DO-4)  
DIMENSIONS in millimeters (inches)  
0.8 0.1  
(0.03 0.004)  
3.30 (0.13)  
4.00 (0.16)  
2+ 0.3  
0
(0.08 + 0.01  
)
0
5.50 (0.22) MIN.  
R 0.40  
R (0.02)  
Ø 1.80 0.20  
(Ø 0.07 0.01)  
20.30 (0.80) MAX.  
Ø 6.8 (0.27)  
10.20 (0.40)  
MAX.  
3.50 (0.14)  
11.50 (0.45)  
10.70 (0.42)  
10/32" UNF-2A  
For metric devices: M5 x 0.8  
11 (0.43)  
Document Number: 95311  
Revision: 30-Jun-08  
For technical questions, contact: indmodules@vishay.com  
www.vishay.com  
1
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Revision: 02-Oct-12  
Document Number: 91000  
1

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