12F(R)120 [VISHAY]
Rectifier Diode, 1 Phase, 1 Element, 12A, 1200V V(RRM), Silicon, DO-203AA, DO-4, 1 PIN;
| 型号： | 12F(R)120 |
| 厂家： | 
VISHAY |
| 描述： | Rectifier Diode, 1 Phase, 1 Element, 12A, 1200V V(RRM), Silicon, DO-203AA, DO-4, 1 PIN 二极管 |
| 文件： | 总7页 (文件大小：173K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
12F(R) Series
Vishay Semiconductors
www.vishay.com
Standard Recovery Diodes
(Stud Version), 12 A
FEATURES
• High surge current capability
• Stud cathode and stud anode version
• Wide current range
• Types up to 1200 V VRRM
• Designed and qualified for industrial and consumer level
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
DO-203AA (DO-4)
TYPICAL APPLICATIONS
• Battery charges
PRODUCT SUMMARY
IF(AV)
12 A
• Converters
Package
DO-203AA (DO-4)
Single diode
• Power supplies
Circuit configuration
• Machine tool controls
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
VALUES
12
UNITS
A
°C
A
IF(AV)
TC
144
IF(RMS)
19
50 Hz
60 Hz
50 Hz
60 Hz
Range
265
IFSM
A
280
351
I2t
A2s
320
VRRM
TJ
100 to 1200
-65 to 175
V
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
VRRM, MAXIMUM
V
RSM, MAXIMUM
V
R(BR), MINIMUM
AVALANCHE
VOLTAGE
V (1)
IRRM MAXIMUM
AT TJ = 175 °C
mA
TYPE
NUMBER
VOLTAGE
CODE
REPETITIVE PEAK
REVERSE VOLTAGE
V
NON-REPETITIVE
PEAK VOLTAGE
V
10
20
100
200
150
275
-
-
40
400
500
500
750
950
1150
1350
12F(R)
60
600
725
12
80
800
950
100
120
1000
1200
1200
1400
Note
(1)
Avalanche version only available from VRRM 400 V to 1200 V
Revision: 13-Dec-13
Document Number: 93487
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
12F(R) Series
Vishay Semiconductors
www.vishay.com
FORWARD CONDUCTION
PARAMETER
SYMBOL
IF(AV)
TEST CONDITIONS
180° conduction, half sine wave
VALUES
12
UNITS
A
°C
A
Maximum average forward current
at case temperature
144
Maximum RMS forward current
IF(RMS)
19
Maximum on-repetitive peak
reverse power
(1)
PR
10 μs square pulse, TJ = TJ maximum
7
K/W
t = 10 ms
265
280
225
235
351
320
250
226
3510
0.77
0.97
No voltage
reapplied
t = 8.3 ms
Maximum peak, one-cycle forward,
non-repetitive surge current
IFSM
A
t = 10 ms
100 % VRRM
reapplied
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Sinusoidal half wave,
initial TJ = TJ maximum
No voltage
reapplied
Maximum I2t for fusing
I2t
A2s
100 % VRRM
reapplied
Maximum I2t for fusing
I2t
t = 0.1 to 10 ms, no voltage reapplied
(16.7 % x x IF(AV) < I < x IF(AV)), TJ = TJ maximum
(I > x IF(AV)), TJ = TJ maximum
A2s
Low level value of threshold voltage
High level value of threshold voltage
VF(TO)1
VF(TO)2
V
Low level value of forward
slope resistance
rf1
(16.7 % x x IF(AV) < I < x IF(AV)), TJ = TJ maximum
10.70
m
High level value of forward
rf2
(I > x IF(AV)), TJ = TJ maximum
6.20
1.26
slope resistance
Maximum forward voltage drop
VFM
Ipk = 38 A, TJ = 25 °C, tp = 400 μs rectangular wave
V
Note
(1)
Available only for avalanche version, all other parameters the same as 12F
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum junction operating temperature range
Maximum storage temperature range
Maximum thermal resistance, junction to case
Maximum thermal resistance, case to heatsink
TJ
-65 to 175
°C
TStg
-65 to 200
RthJC
RthCS
DC operation
2
K/W
Mounting surface, smooth, flat and greased
0.5
1.5 + 0 - 10 %
N · m
lbf · in
N · m
lbf · in
g
Not lubricated threads
13
Allowable mounting torque
1.2 + 0 - 10 %
Lubricated threads
10
7
Approximate weight
Case style
0.25
oz.
See dimensions - link at the end of datasheet
DO-203AA (DO-4)
Revision: 13-Dec-13
Document Number: 93487
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
12F(R) Series
Vishay Semiconductors
www.vishay.com
RthJC CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
TEST CONDITIONS
UNITS
180°
120°
90°
0.33
0.41
0.53
0.78
1.28
0.26
0.44
0.58
0.81
1.29
TJ = TJ maximum
K/W
60°
30°
Note
•
The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
180
170
160
150
140
180
170
160
150
140
130
12F(R) Series
R (DC) = 2.0 K/W
12F(R) Series
(DC) = 2.0 K/W
R
thJC
thJC
Conduction Period
Conduction Angle
30°
60°
90°
120°
30°
60°
90°
180°
120°
DC
16
Average Forward Current (A)
Fig. 2 - Current Ratings Characteristics
180°
0
2
4
6
8
10 12 14
0
4
8
12
20
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
14
R
6
180°
1
K
0
/
W
K
/
W
120°
=
8
12
K
90°
60°
30°
/
W
-
D
e
l
t
a
10
R
RMS Limit
8
6
4
2
0
Conduction Angle
12F(R) Series
T = 175°C
J
0
2
4
6
8
10 12 104
Maximum Allowable Ambient Temperature (°C)
Fig. 3 - Forward Power Loss Characteristics
25
50
75
100
Average Forward Current (A)
Revision: 13-Dec-13
Document Number: 93487
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
12F(R) Series
Vishay Semiconductors
www.vishay.com
20
DC
180°
120°
90°
16
12
8
60°
30°
2
0
RMS Limit
K
/
W
Conduction Period
12F(R) Series
4
T = 175°C
J
0
0
4
8
12
16
200
Maximum Allowable Ambient Temperature (°C)
Fig. 4 - Forward Power Loss Characteristics
25
50
75
100
Average Forward Current (A)
1000
100
10
250
225
200
175
150
125
100
At Any Rated Load Condition And With
Rated V
Applied Following Surge.
T = 25°C
J
RRM
Initial T = 175°C
@60 Hz 0.0083 s
@50 Hz 0.0100 s
J
T = 175°C
J
12F(R) Series
12F(R) Series
1
0
1
2
3
4
5
6
1
10
100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Instantaneous Forward Voltage (V)
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 7 - Forward Voltage Drop Characteristics
275
10
Maximum Non Repetitive Surge Current
Steady State Value
Versus Pulse Train Duration.
R
= 2.0 K/W
250
Initial T = 175°C
J
thJC
(DC Operation)
No Voltage Reapplied
Rated V
Reapplied
225
200
175
150
125
100
RRM
1
12F(R) Series
1
12F(R) Series
0.1
0.001
0.01
0.1
Pulse Train Duration (s)
1
0.01
0.1
10
Square Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance ZthJC Characteristics
Fig. 6 - Maximum Non-Repetitive Surge Current
Revision: 13-Dec-13
Document Number: 93487
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
12F(R) Series
Vishay Semiconductors
www.vishay.com
ORDERING INFORMATION TABLE
Device code
12
F
R
120
M
1
2
3
4
5
1
2
3
-
-
-
Current rating: Code = IF(AV)
F = Standard device
None = Stud normal polarity (cathode to stud)
R = Stud reverse polarity (anode to stud)
4
5
-
-
Voltage code x 10 = VRRM (see Voltage Ratings table)
None = Stud base DO-203AA (DO-4) 10-32UNF-2A
M = Stud base DO-203AA (DO-4) M5 x 0.8
(not available for avalanche diodes)
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95311
Revision: 13-Dec-13
Document Number: 93487
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
DO-203AA (DO-4)
DIMENSIONS in millimeters (inches)
0.8 0.1
(0.03 0.004)
3.30 (0.13)
4.00 (0.16)
2+ 0.3
0
(0.08 + 0.01
)
0
5.50 (0.22) MIN.
R 0.40
R (0.02)
Ø 1.80 0.20
(Ø 0.07 0.01)
20.30 (0.80) MAX.
Ø 6.8 (0.27)
10.20 (0.40)
MAX.
3.50 (0.14)
11.50 (0.45)
10.70 (0.42)
10/32" UNF-2A
For metric devices: M5 x 0.8
11 (0.43)
Document Number: 95311
Revision: 30-Jun-08
For technical questions, contact: indmodules@vishay.com
www.vishay.com
1
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Revision: 02-Oct-12
Document Number: 91000
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