10ETF04STRR
更新时间：2024-09-18 13:00:47
品牌：VISHAY
描述：Rectifier Diode, 1 Phase, 1 Element, 10A, 400V V(RRM), Silicon, TO-220AC, HALOGEN FREE, SMD-220, D2PAK-3
概述
规格参数
数据手册10ETF04STRR 概述
Rectifier Diode, 1 Phase, 1 Element, 10A, 400V V(RRM), Silicon, TO-220AC, HALOGEN FREE, SMD-220, D2PAK-3 整流二极管
10ETF04STRR 规格参数
| 是否Rohs认证： | 不符合 | 生命周期： | Obsolete |
| 零件包装代码： | TO-220AC | 包装说明： | R-PSSO-G2 |
| 针数： | 3 | Reach Compliance Code： | unknown |
| HTS代码： | 8541.10.00.80 | 风险等级： | 5.27 |
| 其他特性： | FREE WHEELING DIODE | 应用： | FAST SOFT RECOVERY |
| 外壳连接： | CATHODE | 配置： | SINGLE |
| 二极管元件材料： | SILICON | 二极管类型： | RECTIFIER DIODE |
| 最大正向电压 (VF)： | 1.2 V | JEDEC-95代码： | TO-220AC |
| JESD-30 代码： | R-PSSO-G2 | 湿度敏感等级： | 1 |
| 最大非重复峰值正向电流： | 150 A | 元件数量： | 1 |
| 相数： | 1 | 端子数量： | 2 |
| 最高工作温度： | 150 °C | 最低工作温度： | -40 °C |
| 最大输出电流： | 10 A | 封装主体材料： | PLASTIC/EPOXY |
| 封装形状： | RECTANGULAR | 封装形式： | SMALL OUTLINE |
| 峰值回流温度（摄氏度）： | 225 | 认证状态： | Not Qualified |
| 最大重复峰值反向电压： | 400 V | 最大反向恢复时间： | 0.145 µs |
| 子类别： | Rectifier Diodes | 表面贴装： | YES |
| 端子形式： | GULL WING | 端子位置： | SINGLE |
| 处于峰值回流温度下的最长时间： | NOT SPECIFIED | Base Number Matches： | 1 |
10ETF04STRR 数据手册
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PDF下载10ETF..PbF Soft Recovery Series
Vishay High Power Products
Fast Soft Recovery
Rectifier Diode, 10 A
FEATURES/DESCRIPTION
Base
The 10ETF..PbF fast soft recovery rectifier series
has been optimized for combined short reverse
recovery time and low forward voltage drop.
cathode
Pb-free
Available
2
RoHS*
COMPLIANT
The glass passivation ensures stable reliable
operation in the most severe temperature and power cycling
conditions.
This product series has been designed and qualified for
industrial level and lead (Pb)-free.
1
3
Cathode
Anode
TO-220AC
APPLICATIONS
PRODUCT SUMMARY
• Output rectification and freewheeling in inverters,
choppers and converters
VRRM
VF at 10 A
trr
200 to 600 V
< 1.2 V
50 ns
• Input rectifications where severe restrictions on conducted
EMI should be met
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
VRRM
IF(AV)
IFSM
trr
CHARACTERISTICS
VALUES
200 to 600
10
UNITS
V
Sinusoidal waveform
A
150
1 A, 100 A/µs
50
ns
V
VF
10 A, TJ = 25 °C
1.2
TJ
- 40 to 150
°C
VOLTAGE RATINGS
VRRM, MAXIMUM PEAK REVERSE
V
RSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
IRRM
AT 150 °C
mA
PART NUMBER
VOLTAGE
V
10ETF02PbF
10ETF04PbF
10ETF06PbF
200
400
600
300
500
700
2
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
10
UNITS
Maximum average forward current
IF(AV)
TC = 128 °C, 180° conduction half sine wave
10 ms sine pulse, rated VRRM applied
10 ms sine pulse, no voltage reapplied
10 ms sine pulse, rated VRRM applied
10 ms sine pulse, no voltage reapplied
t = 0.1 to 10 ms, no voltage reapplied
150
A
Maximum peak one cycle
non-repetitive surge current
IFSM
160
112.5
160
Maximum I2t for fusing
I2t
A2s
Maximum I2√t for fusing
I2√t
1600
A2√s
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 94090
Revision: 17-Apr-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
1
10ETF..PbF Soft Recovery Series
Fast Soft Recovery
Rectifier Diode, 10 A
Vishay High Power Products
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
1.2
UNITS
V
Maximum forward voltage drop
Forward slope resistance
Threshold voltage
VFM
10 A, TJ = 25 °C
rt
23.5
0.85
0.1
mΩ
V
TJ = 150 °C
VF(TO)
TJ = 25 °C
Maximum reverse leakage current
IRM
V
R = Rated VRRM
mA
TJ = 150 °C
3.0
RECOVERY CHARACTERISTICS
PARAMETER
SYMBOL TEST CONDITIONS
VALUES
145
UNITS
ns
IFM
Reverse recovery time
Reverse recovery current
Reverse recovery charge
Snap factor
trr
IF at 10 Apk
trr
Irr
Qrr
S
2.75
A
25 A/µs
25 °C
t
dir
dt
0.32
µC
Qrr
0.6
IRM(REC)
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum junction and storage
temperature range
TJ, TStg
- 40 to 150
°C
Maximum thermal resistance
junction to case
RthJC
RthJA
RthCS
DC operation
1.5
62
Maximum thermal resistance
junction to ambient
°C/W
Typical thermal resistance,
case to heatsink
Mounting surface, smooth and greased
0.5
2
g
Approximate weight
0.07
oz.
minimum
maximum
6 (5)
12 (10)
kgf · cm
(lbf · in)
Mounting torque
Marking device
Case style TO-220AC (JEDEC)
10ETF06
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2
For technical questions, contact: diodes-tech@vishay.com
Document Number: 94090
Revision: 17-Apr-08
10ETF..PbF Soft Recovery Series
Fast Soft Recovery
Rectifier Diode, 10 A
Vishay High Power Products
150
145
140
135
130
125
120
20
16
12
8
10ETF.. Series
RthJC (DC) = 1.5 °C/W
90°
10ETF.. Series
TJ = 150 °C
180°
120°
60°
DC
30°
Ø
RMS limit
Conduction angle
Ø
4
Conduction period
30°
4
60° 90° 120°
180°
0
0
0
0
2
6
8
10
12
0
4
8
12
16
Average Forward Current (A)
Average Forward Current (A)
Fig. 1 - Current Rating Characteristics
Fig. 4 - Forward Power Loss Characteristics
160
140
120
100
80
150
145
140
135
130
125
120
10ETF.. Series
RthJC (DC) = 1.5 °C/W
At any rated load condition and with
rated VRRM applied following surge.
Initial TJ = 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
Ø
Conduction period
120°
90°
60
60°
6
10ETF.. Series
DC
30°
180°
40
1
10
100
2
4
8
10
12
14
16
Number of Equal Amplitude Half Cycle
Average Forward Current (A)
Fig. 2 - Current Rating Characteristics
Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
16
14
12
10
8
180
120°
Maximum non-repetitive surge current
versus pulse train duration.
90°
160
140
120
100
80
60°
Initial TJ = 150 °C
No voltage reapplied
Rated VRRM reapplied
180°
30°
RMS limit
6
Ø
4
Conduction angle
60
10ETF.. Series
TJ = 150 °C
2
10ETF.. Series
0
40
2
4
6
8
10
0.01
0.1
1
Average Forward Current (A)
Fig. 3 - Forward Power Loss Characteristics
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
Document Number: 94090
Revision: 17-Apr-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
3
10ETF..PbF Soft Recovery Series
Fast Soft Recovery
Rectifier Diode, 10 A
Vishay High Power Products
100
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
10ETF.. Series
TJ = 25 °C
10ETF.. Series
IFM = 20 A
IFM = 10 A
TJ = 150 °C
TJ = 25 °C
10
IFM = 5 A
IFM = 2 A
IFM = 1 A
160 200
1
0.5
1.0
1.5
2.0
2.5
3.0
0
40
80
120
Instantaneous Forward Voltage (V)
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 7 - Forward Voltage Drop Characteristics
Fig. 10 - Recovery Charge Characteristics, TJ = 25 °C
0.20
0.15
0.10
0.05
0
2.5
10ETF.. Series
TJ = 150 °C
IFM = 20 A
2.0
IFM = 20 A
IFM = 10 A
IFM = 5 A
IFM = 10 A
1.5
IFM = 5 A
1.0
IFM = 2 A
IFM = 2 A
0.5
10ETF.. Series
TJ = 25 °C
IFM = 1 A
IFM = 1 A
0
0
40
80
120
160
200
0
40
80
120
160
200
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 8 - Recovery Time Characteristics, TJ = 25 °C
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 11 - Recovery Charge Characteristics, TJ = 150 °C
0.4
15
10ETF.. Series
10ETF.. Series
TJ = 150 °C
IFM = 20 A
TJ = 25 °C
12
IFM = 10 A
0.3
0.2
0.1
0
IFM = 5 A
9
IFM = 20 A
IFM = 2 A
IFM = 10 A
IFM = 5 A
6
IFM = 1 A
IFM = 2 A
IFM = 1 A
120
3
0
0
40
80
160
200
0
40
80
120
160
200
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 9 - Recovery Time Characteristics, TJ = 150 °C
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 12 - Recovery Current Characteristics, TJ = 25 °C
www.vishay.com
4
For technical questions, contact: diodes-tech@vishay.com
Document Number: 94090
Revision: 17-Apr-08
10ETF..PbF Soft Recovery Series
Fast Soft Recovery
Rectifier Diode, 10 A
Vishay High Power Products
20
16
12
8
10ETF.. Series
TJ = 150 °C
IFM = 20 A
IFM = 10 A
IFM = 5 A
IFM = 2 A
IFM = 1 A
4
0
0
40
80
120
160
200
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 13 - Recovery Current Characteristics, TJ = 150 °C
10
Steady state value
(DC operation)
1
0.1
0.01
D = 0.50
D = 0.33
D = 0.25
D = 0.17
10ETF.. Series
Single pulse
D = 0.08
0.001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 14 - Thermal Impedance ZthJC Characteristics
Document Number: 94090
Revision: 17-Apr-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
5
10ETF..PbF Soft Recovery Series
Fast Soft Recovery
Rectifier Diode, 10 A
Vishay High Power Products
ORDERING INFORMATION TABLE
Device code
10
E
T
F
06 PbF
1
2
3
4
5
6
1
2
-
-
Current rating (10 = 10 A)
Circuit configuration:
E = Single diode
3
4
-
-
Package:
T = TO-220AC
Type of silicon:
F = Fast soft recovery rectifier
Voltage code x 100 = VRRM
None = Standard production
PbF = Lead (Pb)-free
02 = 200 V
04 = 400 V
06 = 600 V
5
6
-
-
LINKS TO RELATED DOCUMENTS
Dimensions
http://www.vishay.com/doc?95221
http://www.vishay.com/doc?95224
Part marking information
www.vishay.com
6
For technical questions, contact: diodes-tech@vishay.com
Document Number: 94090
Revision: 17-Apr-08
Outline Dimensions
Vishay Semiconductors
TO-220AC
DIMENSIONS in millimeters and inches
B
Seating
1
2
3
plane
(6)
A
D
D
E
A
Ø P
0.014 M B AM
A
L1
E
(7)
E2
C
C
A1
Thermal pad
Q
(6)
H1
H1
(7)
D2 (6)
2 x b2
2 x b
(6)
Detail B
D
Detail B
θ
D1
1
3
2
Lead tip
L3
L4
C
E1 (6)
Lead assignments
Diodes
L
1 + 2 - Cathode
3 - Anode
c
A
Conforms to JEDEC outline TO-220AC
View A - A
e1
A2
0.015 M B AM
MILLIMETERS
INCHES
MIN.
MILLIMETERS
INCHES
MIN.
SYMBOL
NOTES
SYMBOL
NOTES
MIN.
4.25
1.14
2.56
0.69
0.38
1.20
1.14
0.36
0.36
14.85
8.38
11.68
10.11
MAX.
4.65
1.40
2.92
1.01
0.97
1.73
1.73
0.61
0.56
15.25
9.02
12.88
10.51
MAX.
0.183
0.055
0.115
0.040
0.038
0.068
0.068
0.024
0.022
0.600
0.355
0.507
0.414
MIN.
6.86
-
MAX.
8.89
0.76
2.67
5.28
6.48
14.02
3.82
2.13
1.27
3.73
3.00
MAX.
0.350
0.030
0.105
0.208
0.255
0.552
0.150
0.084
0.050
0.147
0.118
A
A1
A2
b
0.167
0.045
0.101
0.027
0.015
0.047
0.045
0.014
0.014
0.585
0.330
0.460
0.398
E1
E2
e
0.270
-
6
7
2.41
4.88
6.09
13.52
3.32
1.78
0.76
3.54
2.60
0.095
0.192
0.240
0.532
0.131
0.070
0.030
0.139
0.102
e1
H1
L
b1
b2
b3
c
4
4
6, 7
2
L1
L3
L4
Ø P
Q
c1
D
4
3
2
D1
D2
E
6
90° to 93°
90° to 93°
3, 6
Notes
(1)
Dimensioning and tolerancing as per ASME Y14.5M-1994
Lead dimension and finish uncontrolled in L1
Dimension D, D1 and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured
at the outermost extremes of the plastic body
(2)
(3)
(4)
(5)
(6)
(7)
(8)
Dimension b1, b3 and c1 apply to base metal only
Controlling dimension: inches
Thermal pad contour optional within dimensions E, H1, D2 and E1
Dimension E2 x H1 define a zone where stamping and singulation irregularities are allowed
Outline conforms to JEDEC TO-220, D2 (minimum) where dimensions are derived from the actual package outline
Document Number: 95221
Revision: 07-Mar-11
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree
to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and
damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay
or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to
obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 11-Mar-11
www.vishay.com
1
10ETF04STRR 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| 10ETF04STRRPBF | VISHAY | Fast Soft Recovery Rectifier Diode, 10 A | 获取价格 |
|
| 10ETF06 | INFINEON | FAST SOFT RECOVERY RECTIFIER DIODE | 获取价格 |
|
| 10ETF06 | VISHAY | Fast Soft Recovery Rectifier Diode, 10 A | 获取价格 |
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| 10ETF06FP | VISHAY | Rectifier Diode, Zener, 1 Phase, 1 Element, 10A, 600V V(RRM), Silicon, TO-220AC, FULL PACK-2 | 获取价格 |
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| 10ETF06FPPBF | INFINEON | Rectifier Diode, 1 Phase, 1 Element, 10A, 600V V(RRM), Silicon, TO-220AC, FULL PACK-3 | 获取价格 |
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| 10ETF06PBF | INFINEON | FAST SOFT RECOVERY RECTIFIER DIODE Lead-Free | 获取价格 |
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| 10ETF06PBF | VISHAY | Fast Soft Recovery Rectifier Diode, 10 A | 获取价格 |
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| 10ETF06S | INFINEON | FAST SOFT RECOVERY RECTIFIER DIODE | 获取价格 |
|
| 10ETF06S | VISHAY | Rectifier Diode, 1 Phase, 1 Element, 10A, 600V V(RRM), Silicon, TO-220AC, HALOGEN FREE, SMD-220, D2PAK-3 | 获取价格 |
|
| 10ETF06SPBF | INFINEON | FAST SOFT RECOVERY RECTIFIER DIODE | 获取价格 |
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