V23990-P828-F10-PM [VINCOTECH]
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;
| 型号： | V23990-P828-F10-PM |
| 厂家： | 
VINCOTECH |
| 描述： | Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current |
| 文件： | 总16页 (文件大小：2892K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
V23990-P828-F10-PM
V23990-P828-F10Y-PM
datasheet
flowPACK 1
1200 V / 35 A
Features
flow 1 17 mm housing
● Compact flow1 housing
● Trenchstop™ IGBT4 Technology
● Compact and Low Inductance Design
● Built-in NTC
Schematic
Target applications
● Motor Drive
● Power Generation
● UPS
Types
● V23990-P828-F10-PM
● V23990-P828-F10Y-PM
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Inverter Switch
VCES
IC
Collector-emitter voltage
1200
33
V
A
Collector current
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Tj = 150 °C
ICRM
Ptot
VGES
tSC
Repetitive peak collector current
Total power dissipation
Gate-emitter voltage
tp limited by Tjmax
Tj = Tjmax
105
81
A
W
V
±20
10
Short circuit ratings
VGE = 15 V
Vcc = 800 V
µs
°C
Tjmax
Maximum junction temperature
175
Copyright Vincotech
1
03 Sep. 2018 / Revision 4
V23990-P828-F10-PM
V23990-P828-F10Y-PM
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Inverter Diode
VRRM
IF
IFRM
Ptot
Peak repetitive reverse voltage
Tj=25°C
Tj = Tjmax
1200
35
V
A
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
Ts = 80 °C
Ts = 80 °C
tp limited by Tjmax
Tj = Tjmax
70
A
63
W
°C
Tjmax
Maximum junction temperature
175
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching condition
Isolation Properties
-40…(Tjmax - 25)
DC Test Voltage*
AC Voltage
tp = 2 s
6000
2500
V
Visol
Isolation voltage
tp = 1 min
V
Creepage distance
min. 12,7
12,64
mm
mm
Clearance
Comparative Tracking Index
*100 % tested in production
CTI
> 200
Copyright Vincotech
2
03 Sep. 2018 / Revision 4
V23990-P828-F10-PM
V23990-P828-F10Y-PM
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Inverter Switch
Static
VGE(th)
VCEsat
ICES
IGES
rg
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
VGE = VCE
0,0012 25
5
5,8
6,5
2,3
V
V
25
1,3
1,92
2,39
15
0
35
150
1200
0
25
25
15
µA
nA
Ω
20
200
none
1950
155
Cies
Coes
Cres
Qg
Output capacitance
f = 1 Mhz
0
25
25
25
pF
Reverse transfer capacitance
Gate charge
115
-15/15
960
35
180
nC
Thermal
λpaste = 1 W/mK
(P12)
Rth(j-s)
Thermal resistance junction to sink
1,18
K/W
Dynamic
25
150
25
150
25
150
25
150
25
150
25
150
91
94
19
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
23
Rgon = 16 Ω
Rgoff = 16 Ω
ns
204
264
72
109
2,02
3,09
1,76
2,81
Turn-off delay time
Fall time
±15
600
35
Qr
Qr
= 3,6 μC
= 6,9 μC
FWD
Eon
Eoff
Turn-on energy (per pulse)
Turn-off energy (per pulse)
FWD
mWs
Copyright Vincotech
3
03 Sep. 2018 / Revision 4
V23990-P828-F10-PM
V23990-P828-F10Y-PM
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Inverter Diode
Static
25
1,35
1,80
1,77
2,35
7,7
VF
IR
Forward voltage
Reverse leakage current
Thermal
35
V
150
1200
25
µA
λpaste = 1 W/mK
(P12)
Rth(j-s)
Thermal resistance junction to sink
1,52
K/W
Dynamic
25
150
25
150
25
150
25
150
25
150
48
53
IRRM
Peak recovery current
Reverse recovery time
Recovered charge
A
251
353
3,56
6,93
1,38
2,83
2000
390
trr
Qr
ns
di/dt = 2303 A/μs
di/dt = 1645 A/μs
±15
600
35
μC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
(dirf/dt)max
Thermistor
R
ΔR/R
P
Rated resistance
25
100
25
25
25
25
4,7
kΩ
%
Deviation of R100
Power dissipation
Power dissipation constant
B-value
R100 = 401,3 Ω
-12,5
12,5
5
mW
mW/K
K
1,3
B(25/50)
Tol. ±3%
Tol. ±3%
3612
3650
B(25/100)
B-value
K
Vincotech NTC Reference
U
Copyright Vincotech
4
03 Sep. 2018 / Revision 4
V23990-P828-F10-PM
V23990-P828-F10Y-PM
datasheet
Inverter Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
= f(
120
)
VCE
= f(
)
VCE
I C
I C
120
VGE
:
7
V
V
V
I
I
I
I
I
I
I
I
8
9
10
11
12
13
14
15
16
17
V
V
V
V
V
V
V
V
90
60
30
90
60
30
0
0
0
1
2
3
4
5
0
1
2
3
4
5
VC E (V)
VC E (V)
tp
=
250
15
μs
V
25 °C
150 °C
tp
=
250
150
μs
°C
Tj:
VGE
=
Tj =
VGE from
7 V to 17 V in steps of 1 V
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as function of pulse duration
= f(
35
)
VGE
= f( )
Z th(j-s) tp
I C
101
I
I
I
I
30
25
20
15
10
5
Z
Z
Z
Z
100
0,5
10-1
0,2
0,1
0,05
0,02
0,01
0,005
0
10-2
10-5
0
10-4
10-3
10-2
10-1
100
101
tp(s)
102
0
2
4
6
8
10
12
VG E (V)
=
100
10
μs
V
25 °C
150 °C
=
D
tp
t
p / T
:
Tj
=
=
1,18
IGBT thermal model values
(K/W)
K/W
VCE
R th(j-s)
R
τ
(s)
5,22E-02
1,72E-01
6,00E-01
2,51E-01
5,83E-02
4,67E-02
4,58E+00
8,26E-01
1,60E-01
2,52E-02
3,82E-03
4,27E-04
Copyright Vincotech
5
03 Sep. 2018 / Revision 4
V23990-P828-F10-PM
V23990-P828-F10Y-PM
datasheet
Inverter Switch Characteristics
figure 5.
IGBT
figure 6.
IGBT
Gate voltage vs gate charge
Safe operating area
VGE = f(Q G
)
I C = f(VCE
)
20
1000
240 V
V
V
I I
I I
V
V
17,5
10ms
1ms
100µs
10µs
100
10
100ms
DC
15
12,5
10
960 V
1
7,5
5
0,1
0,01
2,5
0
0
50
100
150
200
QG (nC)
1
10
100
1000
10000
VC E (V)
=
single pulse
80
D
I C
=
35
A
=
ºC
V
Ts
VGE
=
±15
=
Tj
Tjmax
Copyright Vincotech
6
03 Sep. 2018 / Revision 4
V23990-P828-F10-PM
V23990-P828-F10Y-PM
datasheet
Inverter Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
= f(
120
)
= f( )
tp
I F
VF
Z th(j-s)
101
100
80
60
40
20
0
Z
Z
Z
Z
100
0,5
10-1
0,2
0,1
0,05
0,02
0,01
0,005
0
10-2
=
10-4
=
10-3
10-2
10-1
100
101
102
tp (s)
0
0,8
1,6
2,4
3,2
4
VF (V)
=
250
μs
25 °C
150 °C
/
tp
tp
D
T
:
Tj
1,52
K/W
R th(j-s)
FWD thermal model values
(K/W)
R
τ (s)
4,69E-02
1,86E-01
6,67E-01
3,43E-01
1,78E-01
9,90E-02
9,63E+00
1,03E+00
1,61E-01
3,40E-02
6,66E-03
6,12E-04
Thermistor Characteristics
Typical Thermistor resistance values
figure 1.
Typical NTC characteristic
Thermistor
R
= f(T)
NTC-typical temperature characteristic
5000
4500
4000
3500
3000
2500
2000
1500
1000
500
0
25
50
75
100
125
T (°C)
Copyright Vincotech
7
03 Sep. 2018 / Revision 4
V23990-P828-F10-PM
V23990-P828-F10Y-PM
datasheet
Inverter Switching Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(R g)
E = f(I C
)
8
8
Eon
E
E
E
E
E
E
E
E
6
4
2
0
6
4
2
0
Eon
Eon
Eoff
Eon
Eoff
Eoff
Eoff
0
10
20
30
40
50
60
70
0
10
20
30
40
50
60
70
R
g (Ω)
IC (A)
With an inductive load at
25 °C
With an inductive load at
25 °C
Tj:
Tj:
VCE
VGE
=
=
=
=
600
±15
16
V
V
Ω
Ω
VCE
VGE
I C
=
=
=
600
±15
35
V
V
A
150 °C
150 °C
R gon
R goff
16
figure 3.
FWD
figure 4.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(I c)
Erec = f(R g)
4
5
E
E
E
E
E
E
E
E
Erec
4
3
2
1
0
3
2
1
0
Erec
Erec
Erec
0
10
20
30
40
50
60
70
0
10
20
30
40
50
60
70
IC (A)
R
g (Ω)
With an inductive load at
25 °C
With an inductive load at
25 °C
Tj:
Tj:
VCE
VGE
=
=
=
600
±15
16
V
V
Ω
VCE
VGE
I C
=
=
=
600
±15
35
V
V
A
150 °C
150 °C
R gon
Copyright Vincotech
8
03 Sep. 2018 / Revision 4
V23990-P828-F10-PM
V23990-P828-F10Y-PM
datasheet
Inverter Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(I C
)
t = f(R g)
1
1
td(off)
t
t
t
t
t
t
t
t
td(off)
td(on)
td(on)
tf
tf
0,1
0,1
tr
tr
0,01
0,01
0,001
0,001
0
10
20
30
40
50
60
70
0
10
20
30
40
50
60
70
R
g (Ω)
IC (A)
With an inductive load at
With an inductive load at
Tj =
150
600
±15
16
°C
Tj =
150
600
±15
35
°C
V
VCE
=
=
=
=
V
V
Ω
Ω
VCE
=
=
=
VGE
R gon
R goff
VGE
I C
V
A
16
figure 7.
FWD
figure 8.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
trr = f(I C
)
trr = f(R gon)
0,5
1
trr
t
t
t
t
t
t
t
t
trr
0,4
0,3
0,2
0,1
0
0,8
0,6
0,4
0,2
0
trr
trr
0
10
20
30
40
50
60
70
0
10
20
30
40
50
60
70
Rg on (Ω)
IC (A)
With an inductive load at
25 °C
With an inductive load at
25 °C
Tj:
Tj:
VCE
=
=
=
600
±15
16
V
V
Ω
VCE
VGE
I C
=
=
=
600
±15
35
V
V
A
150 °C
150 °C
VGE
R gon
Copyright Vincotech
9
03 Sep. 2018 / Revision 4
V23990-P828-F10-PM
V23990-P828-F10Y-PM
datasheet
Inverter Switching Characteristics
figure 9.
FWD
figure 10.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of IGBT turn on gate resistor
Q r = f(I C
)
Q r = f(R gon)
12
8
Qr
Q
Q
Q
Q
Q
Q
Q
Q
Qr
9
6
3
0
6
4
2
0
Qr
Qr
0
10
20
30
40
50
60
70
0
10
20
30
40
50
60
70
Rgon (Ω)
IC (A)
With an inductive load at
25 °C
With an inductive load at
25 °C
Tj:
Tj:
VCE
VGE
=
=
=
600
±15
16
V
V
Ω
VCE=
VGE =
I C=
600
±15
35
V
V
A
150 °C
150 °C
R gon
figure 11.
FWD
figure 12.
FWD
Typical peak reverse recovery current current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
I RM = f(I C
)
I RM = f(R gon)
70
160
IRM
IRM
I
I
I I
I I
I
I
60
50
40
30
20
10
0
120
80
40
0
IRM
IRM
0
10
20
30
40
50
60
70
Rgo n (Ω)
0
10
20
30
40
50
60
70
IC (A)
With an inductive load at
25 °C
With an inductive load at
25 °C
Tj:
Tj:
VCE
VGE
=
=
=
600
±15
16
V
VCE
VGE
I C
=
=
=
600
±15
35
V
V
A
150 °C
150 °C
V
R gon
Ω
Copyright Vincotech
10
03 Sep. 2018 / Revision 4
V23990-P828-F10-PM
V23990-P828-F10Y-PM
datasheet
Inverter Switching Characteristics
figure 13.
FWD
figure 14.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor
di F/dt, di rr/dt = f(I C
)
di F/dt, di rr/dt = f(R gon
)
12000
3000
diF/dt
dir r/dt
diF/dt
dirr/dt
t
t
t t
t t
t
t
i
i
i i
i i
i
i
10000
8000
6000
4000
2000
0
2500
2000
1500
1000
500
0
0
10
20
30
40
50
60
70
g on (Ω)
0
10
20
30
40
50
60
70
R
IC (A)
With an inductive load at
25 °C
With an inductive load at
25 °C
Tj:
Tj:
VCE
VGE
=
=
=
600
±15
16
V
VCE =
VGE =
I C=
600
±15
35
V
150 °C
150 °C
V
V
A
R gon
Ω
figure 15.
IGBT
Reverse bias safe operating area
I C = f(VCE
)
80
IC MAX
I
I
I
I
70
60
50
40
30
20
10
0
I
I
I
I
I
I
I
I
V
V
V
V
0
200
400
600
800
1000
1200
1400
C E (V)
V
At
Tj =
150
°C
Ω
R gon
R goff
=
=
16
16
Ω
Copyright Vincotech
11
03 Sep. 2018 / Revision 4
V23990-P828-F10-PM
V23990-P828-F10Y-PM
datasheet
Inverter Switching Definitions
General conditions
=
=
=
T j
125 °C
16 Ω
16 Ω
R gon
R goff
figure 1.
IGBT
figure 2.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
%
%
VGE 90%
VCE 90%
IC
IC
VGE
VGE
VCE
tdon
tEoff
IC 1%
VCE 3%
VCE
IC 10%
VGE 10%
tEon
t (µs)
t (µs)
VGE (0%) =
-15
15
V
VGE (0%) =
-15
V
VGE (100%) =
VC (100%) =
I C (100%) =
V
VGE (100%) =
VC (100%) =
I C (100%) =
15
V
600
35
V
600
35
V
A
A
tdoff
=
264
ns
tdon
=
94
ns
figure 3.
IGBT
figure 4.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
fitted
%
%
IC
IC
IC 90%
IC 60%
IC 40%
VCE
IC 90%
tr
IC10%
VCE
IC 10%
tf
t (µs)
t (µs)
VC (100%) =
I C (100%) =
tf =
600
35
V
VC (100%) =
I C (100%) =
600
35
V
A
A
109
ns
tr
=
23
ns
Copyright Vincotech
12
03 Sep. 2018 / Revision 4
V23990-P828-F10-PM
V23990-P828-F10Y-PM
datasheet
Inverter Switching Characteristics
figure 5.
FWD
figure 6.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr
=
integrating time for Qr)
%
%
Qr
trr
tQr
IF
IF
fitted
IRRM 10%
VF
IRRM 90%
IRRM 100%
t
(µs)
t
(µs)
VF (100%) =
I F (100%) =
600
35
V
I F (100%) =
Q r (100%) =
35
A
A
6,93
μC
I
RRM (100%) =
53
A
trr
=
353
ns
Copyright Vincotech
13
03 Sep. 2018 / Revision 4
V23990-P828-F10-PM
V23990-P828-F10Y-PM
datasheet
Ordering Code & Marking
Version
without thermal paste 17mm housing with solder pins
without thermal paste 17mm housing with Press-fit pins
Ordering Code
V23990-P828-F10-PM
V23990-P828-F10Y-PM
VIN
VIN
Date code
WWYY
Name&Ver
NNNNNNNVV
Serial
UL
UL
Lot
Serial
VIN WWYY
NNNNNNNVV UL
LLLLL SSSS
Text
LLLLL
SSSS
Type&Ver
NNNNNNNVV
Lot number
LLLLL
Date code
WWYY
Datamatrix
SSSS
Outline
Pin table
Pin
X
Y
0
0
0
0
0
0
0
0
0
0
Functions
DC-
52,6
49,9
42,65
39,65
35,15
28,4
24
1
2
DC-
G6
3
4
S6
5
NTC1
NTC2
G4
6
7
8
21
S4
9
12,2
9,2
G2
10
S2
11
12
13
2,7
0
0
0
0
DC-
DC-
DC+
14,65
14
15
16
17
18
19
20
21
22
2,7
0
14,65
28,6
28,6
28,6
28,6
28,6
28,6
28,6
28,6
DC+
U
2,7
5,4
9,6
12,6
19,6
22,3
25
U
U
S1
G1
V
V
V
23
24
25
26
27
28
29
30
31
29,7
32,7
39,7
42,7
47,2
49,9
52,6
52,6
49,9
28,6
28,6
28,6
28,6
28,6
28,6
28,6
14,65
14,65
S3
G3
S5
G5
W
W
W
DC+
DC+
Copyright Vincotech
14
03 Sep. 2018 / Revision 4
V23990-P828-F10-PM
V23990-P828-F10Y-PM
datasheet
Pinout
Identification
ID
Component
Voltage
Current
Function
Comment
T2, T1, T4, T3, T6,
T5
IGBT
1200 V
35 A
35 A
Inverter Switch
D1, D2, D3, D4, D5,
D6
FWD
1200 V
Inverter Diode
Thermistor
NTC
Thermistor
Copyright Vincotech
15
03 Sep. 2018 / Revision 4
V23990-P828-F10-PM
V23990-P828-F10Y-PM
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 100
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow 1 packages see vincotech.com website.
Package data
Package data for flow 1 packages see vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
V23990-P828-F10x-D4-14
03 Sep. 2018
New datasheet format. Press-fit pin version is added.
All
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
16
03 Sep. 2018 / Revision 4
相关型号：
V23990-P828-F10Y-PM
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current
VINCOTECH
V23990-P828-FY-PM
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current
VINCOTECH
V23990-P829-F-PM
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current
VINCOTECH
V23990-P829-F108-PM
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current
VINCOTECH
V23990-P829-F10Y-PM
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current
VINCOTECH
©2020 ICPDF网 联系我们和版权申明