V23990-P729-F49-PM [VINCOTECH]
Easy paralleling;High speed switching;Low switching losses;
| 型号： | V23990-P729-F49-PM |
| 厂家： | 
VINCOTECH |
| 描述： | Easy paralleling;High speed switching;Low switching losses |
| 文件： | 总17页 (文件大小：1606K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
V23990-P729-F48-PM
V23990-P729-F49-PM
datasheet
flowPACK 0
1200 V / 40 A
Features
flow0 housing
● Low inductance layout
● Clip-in PCB mounting
12mm housing
17mm housing
Schematic
Target applications
● Solar
Types
● V23990-P729-F48-PM
● V23990-P729-F49-PM
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
H-Bridge Switch
VCES
IC
Collector-emitter voltage
1200
43
V
A
Collector current
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
ICRM
Ptot
VGES
Repetitive peak collector current
Total power dissipation
Gate-emitter voltage
tp limited by Tjmax
Tj = Tjmax
120
113
±20
A
W
V
tSC
Tj ≤ 150°C
VGE = 15V
10
µs
V
Short circuit ratings
VCC
800
Tjmax
Maximum Junction Temperature
175
°C
Copyright Vincotech
1
24 May. 2016 / Revision 2
V23990-P729-F48-PM
V23990-P729-F49-PM
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
H-Bridge Diode
VRRM
IF
Ptot
Tjmax
Peak Repetitive Reverse Voltage
1200
25
V
A
Continuous (direct) forward current
Total power dissipation
Tj = Tjmax
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
61
W
°C
Maximum Junction Temperature
175
Capacitor (DC)
VMAX
Top
Maximum DC voltage
1000
V
Operation Temperature
-55…+125
°C
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching condition
-40…(Tjmax - 25)
Isolation Properties
Isolation voltage
Visol
DC Test Voltage
tp = 2 s
4000
min. 12,7
V
Creepage distance
Clearance
mm
mm
12mm / 17mm housing
9,55 / min. 12,7
> 200
Comparative Tracking Index
CTI
Copyright Vincotech
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24 May. 2016 / Revision 2
V23990-P729-F48-PM
V23990-P729-F49-PM
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VGE [V] VCE [V] IC [A]
VGS [V] VDS [V] ID [A]
Tj [°C]
Min
Max
H-Bridge Switch
Static
VGE(th)
VCEsat
ICES
IGES
rg
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
VGE = VCE
0,0015 25
5,3
5,8
6,3
V
V
25
1,78
1,96
2,29
2,42
15
0
40
125
1200
0
25
25
5
µA
nA
Ω
20
120
none
2330
150
Cies
Coes
Cres
Qg
f = 1 MHz
Output capacitance
0
25
25
25
pF
Reverse transfer capacitance
Gate charge
130
15
960
40
185
nC
Thermal
phase-change
material
ʎ = 3,4 W/mK
Rth(j-s)
Thermal resistance junction to sink
0,84
K/W
IGBT Switching
25
64
65
66
td(on)
125
150
25
Turn-on delay time
15
Rgoff = 8 Ω
Rgon = 8 Ω
tr
Rise time
125
150
25
125
150
25
125
150
25
125
150
25
19
18
162
216
230
26
ns
td(off)
Turn-off delay time
Fall time
±15
600
40
tf
63
70
1,542
2,194
2,410
1,321
2,287
2,529
Qr
FWD
Qr
FWD
Qr
FWD
= 2,7 ꢀC
= 4,8 ꢀC
= 5,8 ꢀC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
mWs
Eoff
125
150
Copyright Vincotech
3
24 May. 2016 / Revision 2
V23990-P729-F48-PM
V23990-P729-F49-PM
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VGE [V] VCE [V] IC [A]
VGS [V] VDS [V] ID [A]
Tj [°C]
Min
Max
H-Bridge Diode
Static
25
150
25
2,47
2,49
2,74
VF
Ir
Forward voltage
25
V
60
3300
Reverse leakage current
1200
µA
150
Thermal
phase-change
material
λ = 3,4 W/mK
Rth(j-s)
Thermal resistance junction to sink
FWD Switching
1,56
K/W
25
48
IRRM
125
150
25
55
60
101
Peak recovery current
A
trr
Qr
Reverse recovery time
125
150
25
125
150
25
125
150
25
125
150
222
251
ns
di/dt = 3019 A/ꢀs
di/dt = 3104 A/ꢀs
di/dt = 2972 A/ꢀs
2,701
4,784
5,825
1,132
2,113
2,604
3780
2583
2658
±15
600
40
Recovered charge
ꢀC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
(dirf/dt)max
Capacitor (DC)
Capacitance
C
56
55/125/56
22
nF
%
Tolerance
-20
+20
Climatic category
Thermistor
Rated resistance
R
ΔR/R
P
25
100
25
25
25
25
kΩ
%
Deviation of R100
Power dissipation
Power dissipation constant
B-value
R100 = 1486 Ω
-12
+14
200
2
mW
mW/K
K
B(25/50) Tol. ±3%
B(25/100) Tol. ±3%
3950
3998
B-value
K
Vincotech NTC Reference
B
Copyright Vincotech
4
24 May. 2016 / Revision 2
V23990-P729-F48-PM
V23990-P729-F49-PM
datasheet
H-Bridge Switch Characteristics
Typical output characteristics
IGBT
Typical output characteristics
IGBT
IC = f(VCE
)
I C = f(VCE)
I
I
I
I
I
I
I
I
tp
=
250
15
ꢀs
V
25 °C
125 °C
tp
=
250
125
ꢀs
°C
VGE
=
Tj:
Tj =
VGE from
7 V to 17 V in steps of 1 V
Typical transfer characteristics
IGBT
Transient Thermal Impedance as function of Pulse duration
IGBT
IC = f(VGE
)
Z th(j-s) = f(tp)
100
I
I
I
I
Z
Z
Z
Z
10-1
10-2
10-3
10-5
10-4
10-3
10-2
10-1
100
101
tp(s)
102
tp
=
100
10
ꢀs
V
25 °C
125 °C
D =
R th(j-s)
tp / T
VCE
=
Tj:
=
0,84
K/W
IGBT thermal model values
(K/W)
R
τ
(s)
1,18E-01
4,24E-01
2,01E-01
6,46E-02
3,72E-02
8,20E-01
1,32E-01
4,79E-02
9,26E-03
8,03E-04
Copyright Vincotech
5
24 May. 2016 / Revision 2
V23990-P729-F48-PM
V23990-P729-F49-PM
datasheet
H-Bridge Switch Characteristics
Gate voltage vs Gate charge
IGBT
Safe operating area
IGBT
VGE = f(Q G
)
I C = f(VCE
)
V
V
V
V
I I
I I
At
IC=
At
D =
single pulse
80
40
A
Ts
VGE
Tj
=
ºC
V
=
±15
=
Tjmax
ºC
Short circuit duration as a function of VGE
IGBT
Typical short circuit current as a function of VGE
IGBT
tpSC = f(VGE
)
I SC = f(VGE)
t
t
t
t
I I
I I
Copyright Vincotech
6
24 May. 2016 / Revision 2
V23990-P729-F48-PM
V23990-P729-F49-PM
datasheet
H-Bridge Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Z th(j-s) = f(tp)
101
Z
Z
Z
Z
100
D = 0,5
0,2
10-1
0,1
0,05
0,02
0,01
0,005
0.000
10-2
10-4
=
10-3
10-2
10-1
100
101
102
D =
R th(j-s)
tp
=
250
ꢀs
25 °C
150 °C
tp / T
1,56
Tj:
K/W
FWD thermal model values
R (K/W)
τ
(s)
4,65E-02
1,06E-01
4,71E-01
4,83E-01
2,34E-01
1,81E-01
3,38E-02
4,86E+00
8,11E-01
1,09E-01
3,07E-02
7,03E-03
1,25E-03
3,28E-04
Thermistor Characteristics
Typical Thermistor resistance values
Thermistor typical temperature characteristic
Typical NTC characteristic
as a function of temperature
R T = f(T)
Copyright Vincotech
7
24 May. 2016 / Revision 2
V23990-P729-F48-PM
V23990-P729-F49-PM
datasheet
H-Bridge Switching Characteristics
Figure 1.
IGBT
Figure 2.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(rg)
E = f(I C
)
E
E
E
E
E
E
E
E
25 °C
25 °C
125 °C
150 °C
With an inductive load at
With an inductive load at
VCE
VGE
=
=
=
=
600
±15
8
V
V
Ω
Ω
T
j
:
VCE
VGE
I C
=
=
=
600
±15
40
V
V
A
T j:
125 °C
150 °C
R gon
R goff
8
Figure 3.
FWD
Figure 4.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(I c)
Erec = f(r g )
E
E
E
E
E
E
E
E
25 °C
125 °C
150 °C
25 °C
125 °C
150 °C
With an inductive load at
With an inductive load at
:
T j
600
±15
8
V
V
Ω
:
600
±15
40
V
V
A
VCE
VGE
=
=
=
T j
VCE
VGE
I C
=
=
=
R gon
Copyright Vincotech
8
24 May. 2016 / Revision 2
V23990-P729-F48-PM
V23990-P729-F49-PM
datasheet
H-Bridge Switching Characteristics
Figure 5.
IGBT
Figure 6.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(I C)
t = f(r g)
t
t
t
t
t
t
t
t
With an inductive load at
With an inductive load at
150
600
±15
8
°C
V
150
600
±15
40
°C
V
Tj =
Tj =
VCE
=
=
=
=
VCE
=
=
=
VGE
R gon
R goff
V
VGE
I C
V
Ω
Ω
A
8
Figure 7.
FWD
Figure 8.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
t rr = f(I C
)
trr = f(R gon
)
t
t
t
t
t
t
t
t
At
VCE
=
600
±15
8
V
V
Ω
25 °C
125 °C
150 °C
At
VCE
=
600
±15
40
V
V
A
25 °C
:
:
VGE
R gon
=
=
Tj
VGE
I C
=
Tj
125 °C
150 °C
=
Copyright Vincotech
9
24 May. 2016 / Revision 2
V23990-P729-F48-PM
V23990-P729-F49-PM
datasheet
H-Bridge Switching Characteristics
Figure 9.
FWD
Figure 10.
FWD
Typical recovered charge as a function of collector current
Typical recoved charge as a function of IGBT turn on gate resistor
Q r = f(I C
)
Q r = f(R gon)
Q
Q
Q
Q
Q
Q
Q
Q
25 °C
600
±15
8
V
V
Ω
25 °C
125 °C
150 °C
600
±15
40
V
V
A
At
VCE
VGE
R gon
=
At
VCE
VGE
I C
=
:
:
=
T j
=
T j
125 °C
150 °C
=
=
Figure 11.
FWD
Figure 12.
FWD
Typical peak reverse recovery current current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
I RM = f(I C
)
I RM = f(R gon
)
I
I
I I
I I
I
I
At
VCE
=
600
±15
8
V
V
Ω
25 °C
125 °C
150 °C
At
VCE
=
600
±15
40
V
V
A
25 °C
:
:
125 °C
150 °C
VGE
=
=
T j
VGE
I C
=
T j
R gon
=
Copyright Vincotech
10
24 May. 2016 / Revision 2
V23990-P729-F48-PM
V23990-P729-F49-PM
datasheet
H-Bridge Switching Characteristics
Figure 13.
FWD
Figure 14.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor
di F/dt,di rr/dt = f(I c)
di F/dt,di rr/dt = f(R g)
diF
/
dt
diF
/
dt
t
t
t
t
t
t
t
t
dir r/d
t
i
i
i
i
dirr
/dt
i
i
i
i
600
25 °C
25 °C
125 °C
150 °C
At
VCE
=
V
At
VCE
VGE
I C
=
600
±15
40
V
V
A
:
125 °C
150 °C
:
±15
8
V
VGE
=
=
T j
=
T j
Ω
R gon
=
Figure 15.
IGBT
Reverse bias safe operating area
I C = f(V CE
)
IC MAX
I
I
I
I
I
I
I
I
I
I
I
I
V
V
V
V
At
Tj =
175
°C
Ω
R gon =
R goff =
8
8
Ω
Copyright Vincotech
11
24 May. 2016 / Revision 2
V23990-P729-F48-PM
V23990-P729-F49-PM
datasheet
H-Bridge Switching Characteristics
=
=
=
T j
Rgon
150 °C
8 Ω
R goff
8 Ω
Figure 1.
IGBT
Figure 2.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff
=
integrating time for Eoff)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
VCE
tdoff
IC
IC
VCE
VGE
tEoff
VGE
tEon
-15
V
-15
15
V
VGE (0%) =
VGE (0%) =
VGE (100%) =
VC (100%) =
I C (100%) =
15
V
VGE (100%) =
VC (100%) =
I C (100%) =
V
600
40
V
600
40
V
A
A
0,230
0,423
ꢀs
ꢀs
0,066
0,256
ꢀs
ꢀs
t doff
t Eoff
=
=
tdon
tEon
=
=
Figure 3.
IGBT
Figure 4.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
VCE
IC
VCE
tr
tf
600
V
600
40
V
VC (100%) =
I C (100%) =
t f =
VC (100%) =
I C (100%) =
40
A
A
0,070
µs
0,018
µs
tr
=
Copyright Vincotech
12
24 May. 2016 / Revision 2
V23990-P729-F48-PM
V23990-P729-F49-PM
datasheet
H-Bridge Switching Characteristics
Figure 5.
IGBT
Figure 6.
IGBT
Turn-off Switching Waveforms & definition of tEoff
Turn-on Switching Waveforms & definition of tEon
Eoff
Pon
Poff
Eon
tEon
tEoff
P off (100%) =
Eoff (100%) =
24,01
2,53
0,42
kW
mJ
ꢀs
P on (100%) =
Eon (100%) =
24,01
2,41
0,26
kW
mJ
ꢀs
t Eoff
=
tEon =
Figure 7.
FWD
Turn-off Switching Waveforms & definition of trr
Id
Vd
fitted
Vd (100%) =
I d (100%) =
I RRM (100%) =
600
40
V
A
-60
0,251
A
ꢀs
t rr
=
Copyright Vincotech
13
24 May. 2016 / Revision 2
V23990-P729-F48-PM
V23990-P729-F49-PM
datasheet
H-Bridge Switching Characteristics
Figure 8.
FWD
Figure 9.
FWD
Turn-on Switching Waveforms & definition of tQrr (tQrr = integrating time for Qrr
)
Turn-on Switching Waveforms & definition of tErec (tErec= integrating time for Erec)
Id
Qrr
Erec
tErec
Prec
40
A
24,01
2,60
1,00
kW
I d (100%) =
P rec (100%) =
Erec (100%) =
Q rr (100%) =
5,83
1,00
ꢀC
ꢀs
mJ
ꢀs
t Qrr
=
tErec =
Copyright Vincotech
14
24 May. 2016 / Revision 2
V23990-P729-F48-PM
V23990-P729-F49-PM
datasheet
Ordering Code & Marking
Version
without thermal paste PCM 12mm housing with solder pins
with thermal paste PCM 12mm housing with solder pins
without thermal paste PCM 17mm housing with solder pins
Ordering Code
V23990-P729-F48-PM
V23990-P729-F48-/3/-PM
V23990-P729-F49-PM
VIN
VIN
Date code
WWYY
Name&Ver
NNNNNNNVV
Serial
UL
UL
Lot
Serial
VIN WWYY
NNNNNNNVV UL
LLLLL SSSS
Text
LLLLL
SSSS
Name&Ver
NNNNNNNVV
Lot number
LLLLL
Date code
WWYY
Datamatrix
SSSS
Outline
Pin table [mm]
Pin
1
X
Y
Function
0
22,5
22,5
22,5
22,5
22,5
22,5
22,5
22,5
17,8
15,3
7,2
4,7
0
G1
S1
2
2,9
8,3
10,8
19,6
22,1
29,1
32
3
DC-
DC-
DC+
DC+
S2
12mm housing
4
5
6
7
8
G2
9
33,5
33,5
33,5
33,5
32
OUT1
OUT1
OUT2
OUT2
G4
10
11
12
13
14
15
16
17
18
19
20
21
22
17mm housing
29,1
22,1
19,6
10,8
8,3
2,9
0
0
S4
0
DC+
DC+
DC-
DC-
S3
0
0
0
0
0
G3
0
8
Th1
Th2
0
14,5
Copyright Vincotech
15
24 May. 2016 / Revision 2
V23990-P729-F48-PM
V23990-P729-F49-PM
datasheet
Pinout
Identification
ID
Component
IGBT
Voltage
1200 V
1200 V
1000 V
Current
Function
H-Bridge Switch
H-Bridge Diode
H-Bridge Switch
H-Bridge
Comment
T1,T2,T3,T4
D1,D2,D3,D4
C1,C2
40 A
25 A
FWD
Capacitor
Thermistor
NTC
Copyright Vincotech
16
24 May. 2016 / Revision 2
V23990-P729-F48-PM
V23990-P729-F49-PM
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 135
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow 0 packages see vincotech.com website.
Package data
Package data for flow 0 packages see vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
V23990-P729-F4x-D2-14
24 May. 2016
New brand, 17mm housig added
all
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
17
24 May. 2016 / Revision 2
相关型号：
V23990-P764-AY-PM
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current
VINCOTECH
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