V23990-K202-A-1B-PM [VINCOTECH]
Trench Fieldstop IGBT3 technology;
| 型号： | V23990-K202-A-1B-PM |
| 厂家： | 
VINCOTECH |
| 描述： | Trench Fieldstop IGBT3 technology 双极性晶体管 |
| 文件： | 总17页 (文件大小：2044K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
V23990-K202-A-PM
datasheet
MiniSKiiP® 1 PIM
600V / 10A
MiniSKiiP® 1 housing
Features
● Solderless interconnection
● Trench Fieldstop IGBT3 technology
Target Applications
Schematic
● Industrial drives
Types
● V23990-K202-A-PM
Maximum Ratings
Tj=25°C, unless otherwise specified
Condition
Parameter
Symbol
Value
Unit
D8,D9,D10,D11,D12,D13
Repetitive peak reverse voltage
DC forward current
VRRM
IFAV
1600
29
V
A
A
Th=80°C
Tj=Tjmax
IFSM
Surge forward current
220
240
46
tp=10ms
Tj=25°C
Th=80°C
half sine wave
I2t-value
I2t
A2s
W
Ptot
Tj=Tjmax
Power dissipation
Maximum Junction Temperature
Tjmax
150
°C
T1,T2,T3,T4,T5,T6,T7
Collector-emitter break down voltage
DC collector current
VCE
IC
ICpulse
Ptot
600
17
V
A
Th=80°C
Th=80°C
Tj=Tjmax
tp limited by Tjmax
Tj=Tjmax
Repetitive peak collector current
Power dissipation
30
A
48
W
V
VGE
Gate-emitter peak voltage
Short circuit ratings
±20
tSC
Tj≤150°C
5
µs
V
VCC
VGE=15V
360
Tjmax
Maximum Junction Temperature
175
°C
copyright Vincotech
1
Revision: 3
V23990-K202-A-PM
datasheet
Maximum Ratings
Tj=25°C, unless otherwise specified
Condition
Parameter
Symbol
Value
Unit
D1,D2,D3,D4,D5,D6,D7
Repetitive peak reverse voltage
DC forward current
VRRM
IF
IFRM
Ptot
600
19
V
A
Th=80°C
Th=80°C
Tj=Tjmax
tp limited by Tjmax
Tj=Tjmax
Repetitive peak forward current
Power dissipation
38
A
38
W
°C
Tjmax
Maximum Junction Temperature
175
Thermal Properties
Tstg
Top
Storage temperature
-40…+125
°C
°C
Operation temperature under switching condition
-40…+(Tjmax - 25)
Insulation Properties
Insulation voltage
Creepage distance
Clearance
Vis
t=2s
DC voltage
4000
V
min 12,7
min 12,7
mm
mm
copyright Vincotech
2
Revision: 3
V23990-K202-A-PM
datasheet
Characteristic Values
Conditions
Value
Typ
Parameter
Symbol
Unit
Vr [V] or
VGE [V] or
IC [A] or
IF [A] or
ID [A]
VCE [V] or
Tj
Min
Max
VGS [V]
VDS [V]
D8,D9,D10,D11,D12,D13
Forward voltage
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
1,51
1,42
0,86
0,79
0,03
0,03
VF
Vto
rt
25
25
25
V
V
Threshold voltage (for power loss calc. only)
Slope resistance (for power loss calc. only)
Reverse current
ꢀ
0,05
Ir
1500
mA
Thermal grease
RthJH
thickness≤50um
λ =1 W/mK
K/W
Thermal resistance chip to heatsink
1,5
T1,T2,T3,T4,T5,T6,T7
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current incl. Diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
5
5,8
6,5
1,9
VGE(th) VCE=VGE
0,0008
10
V
V
1,1
1,68
1,91
VCE(sat)
ICES
IGES
Rgint
td(on)
tr
15
0
0,03
300
600
0
mA
nA
ꢀ
20
-
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
17
17
13
Rise time
16
ns
145
163
91
td(off)
tf
Turn-off delay time
Rgoff=16 ꢀ
Rgon=32 ꢀ
±15
300
10
Fall time
99
0,229
0,309
0,224
0,283
Eon
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
mWs
pF
Eoff
Cies
Coss
Crss
QGate
551
Output capacitance
f=1MHz
0
25
Tj=25°C
Tj=25°C
40
Reverse transfer capacitance
Gate charge
17
±15
300
10
62
nC
Thermal grease
thickness≤50um
λ =1 W/mK
RthJH
K/W
Thermal resistance chip to heatsink
2,0
D1,D2,D3,D4,D5,D6,D7
Diode forward voltage
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
1,44
1,42
8,5
10,3
189
275
0,64
1,12
90
1,6
VF
IRRM
trr
10
10
V
A
Peak reverse recovery current
Reverse recovery time
ns
Qrr
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovered energy
diF/dt=tbd A/us
0
300
µC
di(rec)max
/dt
A/µs
mWs
55
0,12
0,22
Erec
Thermal grease
thickness≤50um
λ =1 W/mK
RthJH
K/W
Thermal resistance chip to heatsink
2,5
PTC
Rated resistance
Deviation of R100
R100
R
T=25°C
T=100°C
T=100°C
T=25°C
T=25°C
1000
ꢀ
%
∆R/R R100=1670 ꢀ
P
-3
3
1670,313
7,635*10-3
1,731*10-5
ꢀ
A-value
B(25/50) Tol. %
B(25/100) Tol. %
1/K
1/K²
B-value
Vincotech NTC Reference
E
copyright Vincotech
3
Revision: 3
V23990-K202-A-PM
datasheet
T1,T2,T3,T4,T5,T6,T7/D1,D2,D3,D4,D5,D6,D7
Figure 1
IGBT
Figure 2
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
30
25
20
15
10
5
30
25
20
15
10
5
0
0
0
V
CE (V)
VCE (V)
0
1
2
3
4
5
1
2
3
4
5
At
At
tp =
Tj =
tp =
250
25
ꢁs
250
125
ꢁs
Tj =
°C
°C
VGE from
VGE from
7 V to 17 V in steps of 1 V
7 V to 17 V in steps of 1 V
Figure 3
IGBT
Figure 4
FWD
Typical transfer characteristics
Typical diode forward current as
a function of forward voltage
IF = f(VF)
IC = f(VGE
)
12
30
25
20
15
10
5
9
6
3
Tj = 25°C
Tj = Tjmax-25°C
Tj = Tjmax-25°C
Tj = 25°C
VGE (V)
0
0
0
VF (V)
2
4
6
8
10
0
0,5
1
1,5
2
2,5
At
At
tp =
tp =
250
10
ꢁs
250
ꢁs
VCE
=
V
copyright Vincotech
4
Revision: 3
V23990-K202-A-PM
datasheet
T1,T2,T3,T4,T5,T6,T7/D1,D2,D3,D4,D5,D6,D7
Figure 5
IGBT
Figure 6
IGBT
Typical switching energy losses
as a function of collector current
E = f(IC)
Typical switching energy losses
as a function of gate resistor
E = f(RG)
0,8
0,6
0,4
0,2
0
0,6
0,5
0,4
Eon High T
Eon High T
Eon Low T
Eon Low T
Eoff High T
Eoff High T
0,3
0,2
0,1
0
Eoff Low T
Eoff Low T
I C (A)
R G ( Ω )
150
0
5
10
15
20
0
25
50
75
100
125
With an inductive load at
With an inductive load at
Tj =
Tj =
°C
V
°C
V
V
A
25/125
25/125
VCE
VGE
=
=
VCE
VGE
IC =
=
=
300
15
300
15
V
Rgon
Rgoff
=
=
32
ꢀ
ꢀ
10
16
Figure 7
IGBT
Figure 8
IGBT
Typical reverse recovery energy loss
as a function of collector current
Erec = f(IC)
Typical reverse recovery energy loss
as a function of gate resistor
Erec = f(RG)
0,4
0,25
Erec
Tj = Tjmax -25°C
0,2
0,15
0,1
Erec
0,3
Tj = Tjmax -25°C
0,2
Erec
Tj = 25°C
Erec
Tj = 25°C
0,1
0,05
0
0
I C (A)
R G ( Ω )
150
0
5
10
15
20
0
30
60
90
120
With an inductive load at
With an inductive load at
Tj =
Tj =
°C
V
°C
V
V
A
25/125
25/125
VCE
VGE
=
=
VCE
VGE
IC =
=
=
300
15
300
15
V
Rgon
=
32
ꢀ
10
copyright Vincotech
5
Revision: 3
V23990-K202-A-PM
datasheet
T1,T2,T3,T4,T5,T6,T7/D1,D2,D3,D4,D5,D6,D7
Figure 9
IGBT
Figure 10
IGBT
Typical switching times as a
function of collector current
t = f(IC)
Typical switching times as a
function of gate resistor
t = f(RG)
1
1
tdoff
tdoff
tf
tf
0,1
0,1
tdon
tr
tr
tdon
0,01
0,01
0,001
0,001
I
(A)
R G ( Ω )
150
0
2
4
6
8
10
12
14
16
18
20
0
25
50
75
100
125
C
With an inductive load at
With an inductive load at
Tj =
VCE
VGE
Tj =
VCE
VGE
IC =
125
300
15
°C
V
125
300
15
°C
=
=
=
=
V
V
A
V
Rgon
Rgoff
=
=
32
ꢀ
ꢀ
10
16
Figure 11
FWD
Figure 12
Typical reverse recovery time as a
function of IGBT turn on gate resistor
FWD
Typical reverse recovery time as a
function of collector current
trr = f(IC)
trr = f(Rgon
)
0,5
0,4
0,3
0,2
0,1
0
0,4
trr
Tj = Tjmax -25°C
trr
Tj = Tjmax -25°C
0,3
0,2
0,1
trr
Tj = 25°C
trr
Tj = 25°C
0
0
25
50
75
100
125
150
I C (A)
R g on
(
Ω
)
0
5
10
15
20
At
At
Tj =
VCE
VGE
Tj =
VR =
IF =
°C
V
°C
25/125
300
15
25/125
300
10
=
=
V
A
V
V
Rgon
=
VGE =
32
ꢀ
15
copyright Vincotech
6
Revision: 3
V23990-K202-A-PM
datasheet
T1,T2,T3,T4,T5,T6,T7/D1,D2,D3,D4,D5,D6,D7
Figure 13
FWD
Figure 14
FWD
Typical reverse recovery charge as a
function of collector current
Qrr = f(IC)
Typical reverse recovery charge as a
function of IGBT turn on gate resistor
Qrr = f(Rgon
)
2
1,2
Qrr
Tj = Tjmax -25°C
Qrr
1,5
0,9
0,6
0,3
Tj = 25°C
Tj = Tjmax -25°C
Qrr
Qrr
1
0,5
0
Tj = 25°C
0
0
I C (A)
R g on ( Ω)
150
0
5
10
15
20
25
50
75
100
125
At
At
Tj =
VCE
VGE
Tj =
VR =
IF =
°C
V
°C
25/125
300
15
25/125
300
10
=
V
A
V
=
V
Rgon
=
VGE =
32
ꢀ
15
Figure 15
FWD
Figure 16
FWD
Typical reverse recovery current as a
function of collector current
IRRM = f(IC)
Typical reverse recovery current as a
function of IGBT turn on gate resistor
IRRM = f(Rgon
)
12
12
Tj = Tjmax -25°C
Tj = Tjmax - 25°C
IRRM
IRRM
9
6
3
0
Tj = 25°C
8
Tj = 25°C
IRRM
IRRM
4
0
0
I C (A)
R gon ( Ω )
150
30
60
90
120
0
5
10
15
20
At
At
Tj =
VCE
VGE
Tj =
VR =
IF =
°C
V
°C
V
A
V
25/125
300
15
25/125
300
10
=
=
V
Rgon
=
VGE =
32
ꢀ
15
copyright Vincotech
7
Revision: 3
V23990-K202-A-PM
datasheet
T1,T2,T3,T4,T5,T6,T7/D1,D2,D3,D4,D5,D6,D7
Figure 17
FWD
Figure 18
FWD
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI0/dt,dIrec/dt = f(IC)
Typical rate of fall of forward
and reverse recovery current as a
function of IGBT turn on gate resistor
dI0/dt,dIrec/dt = f(Rgon
)
800
1200
dI0/dt
dI0/dt
µ
µ
µ
µ
dIrec/dt
dIrec/dt
600
400
200
0
900
600
300
0
I C (A)
R gon ( Ω )
150
0
5
10
15
20
0
25
50
75
100
125
At
At
Tj =
VCE
VGE
Tj =
VR =
IF =
°C
V
°C
V
A
V
25/125
300
15
25/125
300
10
=
=
V
Rgon
=
VGE =
32
ꢀ
15
Figure 19
IGBT
Figure 20
FWD
IGBT transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
FWD transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
101
101
100
100
D = 0,5
D = 0,5
0,2
0,2
0,1
10-1
10-1
0,1
0,05
0,02
0,01
0,005
0.000
0,05
0,02
0,01
0,005
0.000
10-2
10-5
10-2
10-5
10-4
10-3
10-2
10-1
100
1011
10-4
10-3
10-2
10-1
100
1011
t p (s)
t p (s)
At
At
tp / T
2,0
tp / T
2,5
D =
D =
RthJH
=
RthJH =
K/W
K/W
IGBT thermal model values
FWD thermal model values
R (K/W)
0,04
Tau (s)
5,9E+00
5,2E-01
7,5E-02
1,8E-02
2,8E-03
2,7E-04
R (K/W)
0,05
Tau (s)
9,0E+00
6,6E-01
1,2E-01
2,9E-02
4,8E-03
6,9E-04
0,15
0,25
0,71
0,88
0,61
0,73
0,26
0,33
0,22
0,26
copyright Vincotech
8
Revision: 3
V23990-K202-A-PM
datasheet
T1,T2,T3,T4,T5,T6,T7/D1,D2,D3,D4,D5,D6,D7
Figure 21
IGBT
Figure 22
IGBT
Power dissipation as a
function of heatsink temperature
Ptot = f(Th)
Collector current as a
function of heatsink temperature
IC = f(Th)
100
80
60
40
20
0
24
18
12
6
0
T h
(
o C)
T h (
o C)
0
50
100
150
200
0
50
100
150
200
At
At
Tj =
Tj =
VGE
175
°C
175
15
°C
V
=
Figure 23
Power dissipation as a
FWD
Figure 24
Forward current as a
FWD
function of heatsink temperature
function of heatsink temperature
Ptot = f(Th)
IF = f(Th)
80
60
40
20
0
25
20
15
10
5
0
T h
(
o C)
T h (
o C)
0
50
100
150
200
0
50
100
150
200
At
At
Tj =
Tj =
175
°C
175
°C
copyright Vincotech
9
Revision: 3
V23990-K202-A-PM
datasheet
T1,T2,T3,T4,T5,T6,T7/D1,D2,D3,D4,D5,D6,D7
Figure 25
IGBT
Figure 26
IGBT
Gate voltage vs Gate charge
Safe operating area as a function
of collector-emitter voltage
IC = f(VCE
)
VGE = f(QGE
17,5
)
103
15
12,5
10
10uS
120V
480V
102
101
100
100uS
1mS
10mS
100mS
7,5
5
DC
2,5
0
0
10-1
100
10
20
30
40
50
60
70
Q g (nC)
80
103
101
102
VCE (V)
At
At
IC
=
D =
Th =
10
A
single pulse
80
ºC
VGE
Tj =
=
15
V
Tjmax
ºC
copyright Vincotech
10
Revision: 3
V23990-K202-A-PM
datasheet
D8,D9,D10,D11,D12,D13
Figure 1
Diode
Figure 2
Diode
Typical diode forward current as
a function of forward voltage
IF= f(VF)
Diode transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
101
100
10-1
10-2
50
40
30
20
D = 0,5
0,2
Tj = Tjmax-25°C
0,1
Tj = 25°C
0,05
0,02
0,01
0,005
0.000
10
0
0
0,5
1
1,5
2
2,5
VF (V)
t p (s)
10-5
10-4
10-3
10-2
10-1
100
1011
At
At
tp =
tp / T
1,5
250
ꢁs
D =
RthJH
=
K/W
Figure 3
Power dissipation as a
Diode
Figure 4
Forward current as a
Diode
function of heatsink temperature
function of heatsink temperature
Ptot = f(Th)
IF = f(Th)
100
80
60
40
20
0
45
36
27
18
9
0
T h
(
o C)
T h (
o C)
0
30
60
90
120
150
0
30
60
90
120
150
At
At
Tj =
Tj =
150
ºC
150
ºC
copyright Vincotech
11
Revision: 3
V23990-K202-A-PM
datasheet
Thermistor
Figure 1
Thermistor
Typical PTC characteristic
as a function of temperature
RT = f(T)
PTC-typical temperature characteristic
2000
1800
1600
1400
1200
1000
T (°C)
25
50
75
100
125
copyright Vincotech
12
Revision: 3
V23990-K202-A-PM
datasheet
Switching Definitions Output Inverter
General conditions
Tj
=
=
=
150 °C
32 Ω
Rgon
Rgoff
16,5 Ω
Figure 1
Output inverter IGBT
Figure 2
Output inverter IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff
Turn-on Switching Waveforms & definition of tdon, tEon
(tEoff = integrating time for Eoff
)
(tEon = integrating time for Eon)
200
120
tdoff
%
%
IC
100
170
140
VCE
VGE 90%
VCE 90%
IC
80
60
40
20
0
110
VGE
tEoff
80
tdon
50
IC 1%
VGE
VCE
20
VCE 3%
IC10%
VGE10%
-20
-10
tEon
-40
-40
2,8
-0,1
0
0,1
0,2
0,3
0,4
0,5
2,9
3
3,1
3,2
time (us)
time(us)
VGE (0%) =
VGE (0%) =
0
V
0
V
VGE (100%) =
VC (100%) =
IC (100%) =
VGE (100%) =
VC (100%) =
IC (100%) =
15
V
15
V
V
A
300
10
V
300
10
A
tdoff
tEoff
=
=
tdon
tEon
=
=
0,16
0,41
ꢁs
ꢁs
0,02
0,18
ꢁs
ꢁs
Figure 3
Output inverter IGBT
Figure 4
Output inverter IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
120
200
fitted
%
IC
%
VCE
Ic
170
140
110
100
80
60
40
20
0
IC 90%
IC
60%
IC90%
80
tr
IC 40%
VCE
50
20
IC10%
IC10%
-10
-40
tf
0,2
-20
0,05
0,1
0,15
0,25
0,3
0,35 0,4
time (us)
2,8
2,85
2,9
2,95
3
3,05
3,1
time(us)
VC (100%) =
IC (100%) =
tf =
VC (100%) =
IC (100%) =
tr =
300
V
300
V
10
A
10
A
0,10
ꢁs
0,02
ꢁs
copyright Vincotech
13
Revision: 3
V23990-K202-A-PM
datasheet
Switching Definitions Output Inverter
Figure 5
Output inverter IGBT
Figure 6
Output inverter IGBT
Turn-off Switching Waveforms & definition of tEoff
Turn-on Switching Waveforms & definition of tEon
120
220
%
Poff
Eoff
Pon
%
100
180
80
140
100
60
60
Eon
40
20
VGE 90%
20
Uge10%
Uce3%
0
tEoff
tEon
IC 1%
-20
-20
2,8
2,85
2,9
2,95
3
3,05
3,1
-0,05
0,1
0,25
0,4
0,55
time (us)
time(us)
Poff (100%) =
Eoff (100%) =
Pon (100%) =
Eon (100%) =
3,01
0,28
0,41
kW
3,01
0,31
0,18
kW
mJ
ꢁs
mJ
tEoff
=
tEon =
ꢁs
Figure 7
Output inverter IGBT
Turn-off Switching Waveforms & definition of trr
120
%
Id
80
trr
40
fitted
0
IRRM10%
Vd
-40
-80
IRRM90%
IRRM100%
-120
2,8
2,9
3
3,1
3,2
3,3
time(us)
Vd (100%) =
Id (100%) =
300
10
V
A
IRRM (100%) =
10
A
trr
=
0,28
ꢁs
copyright Vincotech
14
Revision: 3
V23990-K202-A-PM
datasheet
Switching Definitions Output Inverter
Figure 8
Output inverter FWD
Figure 9
Output inverter FWD
Turn-on Switching Waveforms & definition of tQrr
(tQrr = integrating time for Qrr)
Turn-on Switching Waveforms & definition of tErec
(tErec= integrating time for Erec
)
150
%
120
%
Erec
Id
Qrr
100
100
80
tErec
tQrr
50
60
Prec
40
20
0
0
-50
-100
-20
2,7
2,9
3,1
3,3
3,5
3,7
2,8
2,9
3
3,1
3,2
3,3
3,4
3,5
time(us)
time(us)
Id (100%) =
Prec (100%) =
Erec (100%) =
10
A
3,01
kW
mJ
ꢁs
Qrr (100%) =
1,12
0,56
ꢁC
ꢁs
0,22
0,56
tQrr
=
tErec =
copyright Vincotech
15
Revision: 3
V23990-K202-A-PM
datasheet
Ordering Code and Marking - Outline - Pinout
Ordering Code & Marking
Version
Ordering Code
in DataMatrix as
in packaging barcode as
with std lid (black V23990-K12-T-PM)
V23990-K202-A-/0A/-PM
K202A
K202A
K202A
K202A
K202A-/0A/
K202A-/1A/
K202A-/0B/
K202A-/1B/
with std lid (black V23990-K12-T-PM) and P12 V23990-K202-A-/1A/-PM
with thin lid (white V23990-K13-T-PM) V23990-K202-A-/0B/-PM
with thin lid (white V23990-K13-T-PM) and P12 V23990-K202-A-/1B/-PM
Outline
Pinout
copyright Vincotech
16
Revision: 3
V23990-K202-A-PM
datasheet
DISCLAIMER
The information given in this datasheet describes the type of component and does not represent assured characteristics. For tested
values please contact Vincotech.Vincotech reserves the right to make changes without further notice to any products herein to improve
reliability, function or design. Vincotech does not assume any liability arising out of the application or use of any product or circuit
described herein; neither does it convey any license under its patent rights, nor the rights of others.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written
approval of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to
cause the failure of the life support device or system, or to affect its safety or effectiveness.
copyright Vincotech
17
Revision: 3
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