A0-VS122PA600M7-L759F7 [VINCOTECH]
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC;
| 型号： | A0-VS122PA600M7-L759F7 |
| 厂家： | 
VINCOTECH |
| 描述： | Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC |
| 文件： | 总17页 (文件大小：3036K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
A0-VS122PA600M7-L759F70
A0-VP122PA600M7-L759F70T
datasheet
VINcoDUAL E3
1200 V / 600 A
Features
VINco E3 housing
V
● IGBT M7 technology with low
and improved EMC behavior
CEsat
● New SoLid Cover Technology for higher reliability
● Industry standard housing
● Press-fit pin and pre-applied phase-change
Thermal Interface Material available
Schematic
Target applications
● Industrial Drives
● Power Supply
● UPS
Types
● A0-VS122PA600M7-L759F70
● A0-VP122PA600M7-L759F70T
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Half-Bridge Switch
VCES
IC
Collector-emitter voltage
1200
538
V
A
Collector current
Tj = Tjmax
Ts = 80 °C
ICRM
Repetitive peak collector current
tp limited by Tjmax
Tj = Tjmax
1200
A
Ptot
VGES
tSC
Total power dissipation
Gate-emitter voltage
Ts = 80 °C
954
±20
9,5
W
V
Short circuit ratings
VGE = 15 V
Vcc = 800 V
Tj = 150 °C
µs
°C
Tjmax
Maximum junction temperature
175
Copyright Vincotech
1
24 Sep. 2019 / Revision 5
A0-VS122PA600M7-L759F70
A0-VP122PA600M7-L759F70T
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Half-Bridge Diode
VRRM
IF
IFRM
Ptot
Peak repetitive reverse voltage
1200
437
V
A
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
1200
713
A
Tj = Tjmax
W
°C
Tjmax
Maximum junction temperature
175
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching condition
Isolation Properties
-40…(Tjmax - 25)
DC Test Voltage*
AC Voltage
tp = 2 s
4000
2500
18,1
V
Visol
Isolation voltage
tp = 1 min
V
Creepage distance
mm
mm
Clearance
16,2
Comparative Tracking Index
* 100 % tested in prodiction
CTI
> 200
Copyright Vincotech
2
24 Sep. 2019 / Revision 5
A0-VS122PA600M7-L759F70
A0-VP122PA600M7-L759F70T
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Half-Bridge Switch
Static
VGE(th)
Gate-emitter threshold voltage
VGE = VCE
0,06
600
25
5,4
6
6,6
V
V
25
1,51
1,71
1,78
2,15
VCEsat
Collector-emitter saturation voltage
15
125
150
ICES
IGES
rg
Collector-emitter cut-off current*
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
1200
0
25
25
960
µA
nA
Ω
20
1500
0,67
111000
3300
Cies
Coes
Cres
Qg
Output capacitance
0
10
25
25
pF
Reverse transfer capacitance
Gate charge
1260
15
600
600
3600
nC
Thermal
phase-change
material
λ = 3,4 W/mK
Rth(j-s)
Thermal resistance junction to sink
0,10
K/W
Dynamic
25
445
461
465
td(on)
125
150
25
Turn-on delay time
68
tr
Rise time
125
150
25
74
82
363
Rgoff = 1 Ω
Rgon = 1 Ω
ns
td(off)
Turn-off delay time
Fall time
125
150
25
125
150
25
125
150
25
125
150
393
405
63
92
±15
600
626
tf
91
47,602
71,722
79,251
45,175
53,576
60,131
QrFWD = 49,9 μC
QrFWD = 85,5 μC
QrFWD = 91,4 μC
Eon
Turn-on energy (per pulse)
mWs
Eoff
Turn-off energy (per pulse)
* including parallel device's leakage current
Copyright Vincotech
3
24 Sep. 2019 / Revision 5
A0-VS122PA600M7-L759F70
A0-VP122PA600M7-L759F70T
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Half-Bridge Diode
Static
25
1,67
1,82
1,83
2,2
VF
IR
125
150
Forward voltage
600
V
Reverse leakage current
1200
25
360
µA
Thermal
phase-change
material
λ = 3,4 W/mK
Rth(j-s)
Thermal resistance junction to sink
0,13
K/W
Dynamic
25
450
476
468
IRRM
125
150
25
Peak recovery current
Reverse recovery time
Recovered charge
A
219
trr
Qr
125
150
25
125
150
25
125
150
25
125
150
420
466
ns
di/dt = 10500 A/μs
49,944
85,482
91,410
18,159
31,436
33,102
5046
3591
3605
di/dt = 8700 A/μs ±15
di/dt = 7117 A/μs
600
626
μC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
(dirf/dt)max
Thermistor
R
ΔR/R
P
Rated resistance
25
100
25
25
25
25
5
kΩ
%
Deviation of R100
Power dissipation
Power dissipation constant
B-value
R100 = 493 Ω
-5
+5
245
1,4
mW
mW/K
K
B(25/50)
Tol. ±2 %
Tol. ±2 %
3375
3437
B(25/100)
B-value
K
Vincotech NTC Reference
K
Copyright Vincotech
4
24 Sep. 2019 / Revision 5
A0-VS122PA600M7-L759F70
A0-VP122PA600M7-L759F70T
datasheet
Half-Bridge Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
I C = f(VCE
)
I C = f(VCE
)
1800
1800
VGE
:
7
V
V
V
I
I
I
I
I
I
I
I
8
9
1500
1200
900
600
300
0
1500
1200
900
600
300
0
10
11
12
13
14
15
16
17
V
V
V
V
V
V
V
V
0
1
2
3
4
5
0
1
2
3
4
5
VC E (V)
VC E (V)
tp
=
250
15
μs
V
25 °C
125 °C
150 °C
tp
Tj
=
=
250
125
7 V to 17 V in steps of 1 V
μs
VGE
=
Tj:
°C
VGE from
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as function of pulse duration
I C = f(VGE
)
Z th(j-s) = f(tp)
10-1
600
I
I
I
I
500
400
300
200
100
Z
Z
Z
Z
10-2
10-3
10-4
0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
0
10-5
10-4
10-3
10-2
10-1
100
101
tp(s)
102
4
6
8
10
12
VG E (V)
tp
=
250
0
μs
V
25 °C
125 °C
150 °C
D =
t
p / T
0,10
IGBT thermal model values
(K/W)
VCE
=
Tj:
R th(j-s)
=
K/W
R
τ
(s)
3,79E-02
2,16E-02
3,06E-02
6,56E-03
2,84E-03
2,69E+00
3,12E-01
5,64E-02
1,08E-02
8,43E-04
Copyright Vincotech
5
24 Sep. 2019 / Revision 5
A0-VS122PA600M7-L759F70
A0-VP122PA600M7-L759F70T
datasheet
Half-Bridge Switch Characteristics
figure 5.
IGBT
figure 6.
IGBT
Gate voltage vs gate charge
Safe operating area
VGE = f(Q G
)
I C = f(VCE
)
20
10000
V
V
V
V
I I
I I
1ms
10µs
100ms
10ms
100µs
15
10
5
1000
100
10
DC
600V
0
1
-5
0.1
-10
-15
0.01
-4000
-2000
0
2000
4000
6000
1
10
100
1000
10000
QG (nC)
VC E (V)
D =
single pulse
I C
=
600
A
V
V
Ts
=
80
ºC
V
VGE
VCC
=
=
±15
600
VGE
=
±15
Tjmax
Tj =
Copyright Vincotech
6
24 Sep. 2019 / Revision 5
A0-VS122PA600M7-L759F70
A0-VP122PA600M7-L759F70T
datasheet
Half-Bridge Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
= f(
)
= f( )
tp
I F
VF
Z th(j-s)
100
Z
Z
Z
Z
10-1
10-2
10-4
=
10-3
10-2
10-1
100
101
102
μs
tp
=
250
25 °C
125 °C
150 °C
D =
R th(j-s)
tp / T
0,13
Tj:
K/W
FWD thermal model values
(K/W)
R
τ (s)
4,56E+00
1,42E-02
2,24E-02
3,79E-02
4,42E-02
6,69E-03
7,87E-03
9,51E-01
1,30E-01
3,01E-02
8,14E-03
6,10E-04
Thermistor Characteristics
Typical Thermistor resistance values
figure 1.
Thermistor
Typical NTC characteristic
as a function of temperature
R = f(T)
Copyright Vincotech
7
24 Sep. 2019 / Revision 5
A0-VS122PA600M7-L759F70
A0-VP122PA600M7-L759F70T
datasheet
Half-Bridge Switching Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(R g)
E = f(I C
)
E
E
E
E
E
E
E
E
25 °C
125 °C
150 °C
25 °C
125 °C
150 °C
With an inductive load at
With an inductive load at
:
VCE
VGE
=
=
=
=
600
±15
1
V
V
Ω
Ω
T
j
VCE
VGE
I C
=
=
=
600
±15
626
V
V
A
Tj:
R gon
R goff
1
figure 3.
FWD
figure 4.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(I c)
Erec = f(R g)
E
E
E
E
E
E
E
E
25 °C
125 °C
150 °C
25 °C
125 °C
150 °C
With an inductive load at
With an inductive load at
600
±15
1
V
V
Ω
Tj:
VCE
VGE
I C
=
=
=
600
±15
626
V
V
A
:
Tj
VCE
VGE
=
=
=
R gon
Copyright Vincotech
8
24 Sep. 2019 / Revision 5
A0-VS122PA600M7-L759F70
A0-VP122PA600M7-L759F70T
datasheet
Half-Bridge Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(I C
)
t = f(R g)
t
t
t
t
With an inductive load at
With an inductive load at
Tj =
150
600
±15
1
°C
Tj =
150
600
±15
626
°C
V
VCE
=
=
=
=
V
V
Ω
Ω
VCE
=
=
=
VGE
R gon
R goff
VGE
I C
V
A
1
figure 7.
FWD
figure 8.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
trr = f(I C
)
trr = f(R gon
)
t
t
t
t
t t
t t
600
25 °C
At
VCE
=
V
V
Ω
At
VCE
=
600
V
V
A
25 °C
125 °C
150 °C
±15
1
:
Tj
125 °C
150 °C
VGE
I C
=
±15
626
:
Tj
VGE
R gon
=
=
=
Copyright Vincotech
9
24 Sep. 2019 / Revision 5
A0-VS122PA600M7-L759F70
A0-VP122PA600M7-L759F70T
datasheet
Half-Bridge Switching Characteristics
figure 9.
FWD
figure 10.
FWD
Typical recovered charge as a function of collector current
Typical recoved charge as a function of IGBT turn on gate resistor
Q r = f(I C
)
Q r = f(R gon)
Q
Q
Q
Q
Q
Q
Q
Q
600
At
VCE
VGE
R gon
=
V
V
Ω
25 °C
125 °C
150 °C
At
VCE
VGE
I C
=
600
±15
626
V
V
A
25 °C
125 °C
150 °C
±15
1
:
Tj
=
:
Tj
=
=
=
figure 11.
FWD
figure 12.
FWD
Typical peak reverse recovery current current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
I RM = f(I C
)
I RM = f(R gon
)
I
I
I I
I I
I
I
At
VCE
=
600
±15
1
V
V
Ω
25 °C
125 °C
150 °C
At
VCE
=
600
±15
626
V
V
A
25 °C
125 °C
150 °C
:
Tj
:
Tj
VGE
=
=
VGE
I C
=
R gon
=
Copyright Vincotech
10
24 Sep. 2019 / Revision 5
A0-VS122PA600M7-L759F70
A0-VP122PA600M7-L759F70T
datasheet
Half-Bridge Switching Characteristics
figure 13.
FWD
figure 14.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor
di F/dt,di rr/dt = f(I c)
di F/dt,di rr/dt = f(R gon
)
diF/dt
diF
/
dt
t
t
t
t
di
r r/dt
dirr
/dt
t
t
t
t
i
i
i
i
i
i
i
i
At
VCE
=
600
±15
1
V
V
Ω
25 °C
125 °C
150 °C
At
VCE
VGE
I C
=
600
±15
626
V
V
A
25 °C
:
Tj
:
Tj
125 °C
150 °C
VGE
R gon
=
=
=
=
figure 15.
IGBT
Reverse bias safe operating area
I C = f(VCE
)
IC MAX
I
I
I
I
I
I
I
I
I
I
I
I
V
V
V
V
At
Tj =
175
°C
Ω
R gon
R goff
=
=
1
1
Ω
Copyright Vincotech
11
24 Sep. 2019 / Revision 5
A0-VS122PA600M7-L759F70
A0-VP122PA600M7-L759F70T
datasheet
Half-Bridge Switching Characteristics
General conditions
=
=
=
T j
R gon
125 °C
1 Ω
R goff
1 Ω
figure 1.
IGBT
figure 2.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
VCE
VGE
IC
VGE
tEoff
VCE
tEon
-15
-15
VGE (0%) =
GE (100%) =
VC (100%) =
C (100%) =
V
VGE (0%) =
V
V
15
V
VGE (100%) =
VC (100%) =
I C (100%) =
15
V
600
V
600
V
I
617
A
617
A
tdoff
tEoff
=
=
0,393
0,858
μs
μs
tdon
tEon
=
=
0,461
0,989
μs
μs
figure 3.
IGBT
figure 4.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
VCE
IC
IC
VCE
tr
tf
600
V
600
V
VC (100%) =
I C (100%) =
tf =
VC (100%) =
I C (100%) =
617
A
617
A
0,092
μs
0,074
μs
tr
=
Copyright Vincotech
12
24 Sep. 2019 / Revision 5
A0-VS122PA600M7-L759F70
A0-VP122PA600M7-L759F70T
datasheet
Half-Bridge Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Turn-off Switching Waveforms & definition of tEoff
Turn-on Switching Waveforms & definition of tEon
Poff
Pon
Eon
Eoff
tEon
tEoff
P off (100%) =
Eoff (100%) =
370,46
kW
mJ
μs
P on (100%) =
Eon (100%) =
370,46
71,72
0,99
kW
mJ
μs
53,58
0,86
tEoff
=
tEon =
figure 7.
FWD
Turn-off Switching Waveforms & definition of trr
IF
fitted
VF
VF (100%) =
F (100%) =
I RRM (100%) =
trr
600
617
V
I
A
-476
A
=
0,420
μs
Copyright Vincotech
13
24 Sep. 2019 / Revision 5
A0-VS122PA600M7-L759F70
A0-VP122PA600M7-L759F70T
datasheet
Half-Bridge Switching Characteristics
figure 8.
FWD
figure 9.
FWD
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
Turn-on Switching Waveforms & definition of tErec (tErec= integrating time for Erec)
Erec
Qr
IF
tErec
Prec
I F (100%) =
Q r (100%) =
617
A
P rec (100%) =
Erec (100%) =
370,46
31,45
0,82
kW
mJ
μs
85,50
0,82
μC
μs
tQr
=
tErec =
Copyright Vincotech
14
24 Sep. 2019 / Revision 5
A0-VS122PA600M7-L759F70
A0-VP122PA600M7-L759F70T
datasheet
Ordering Code & Marking
Version
without thermal paste 17 mm housing with solder pins
with thermal paste 17 mm housing with solder pins
without thermal paste 17 mm housing with Press-fit pins
with thermal paste 17 mm housing with Press-fit pins
Ordering Code
A0-VS122PA600M7-L759F70
A0-VS122PA600M7-L759F70-/3/
A0-VP122PA600M7-L759F70T
A0-VP122PA600M7-L759F70T-/3/
Name
Date code
WWYY
UL & VIN
UL VIN
Lot
Serial
Text
NN-NNNNNNNNNNNNNN-TTTTTTVV
VIN WWYY LLLLL SSSS
NN-NNNNNNNNNNNNNN-TTTTTTVV
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
WWYY
Datamatrix
TTTTTTTVV
LLLLL
SSSS
Outline
Pin table [mm]
Pin
1
X
Y
Function
7,24
-0,45
Therm1
Therm2
G12
2
11,06 -0,45
60,58 -0,45
3
4
64,4
-0,45
S12
5
87,26 -0,45
C12
6
-
-
-
-
Ph
7
Ph
8
37,72 57,95
33,92 57,95
G11
9
S11
10
11
-
-
-
-
DC-
DC+
Copyright Vincotech
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24 Sep. 2019 / Revision 5
A0-VS122PA600M7-L759F70
A0-VP122PA600M7-L759F70T
datasheet
Pinout
Identification
ID
Component
Voltage
Current
Function
Comment
T11,T12
IGBT
1200 V
600 A
600 A
Half-Bridge Switch
Half-Bridge Diode
Thermistor
D11,D12
Rt
FWD
NTC
1200 V
Copyright Vincotech
16
24 Sep. 2019 / Revision 5
A0-VS122PA600M7-L759F70
A0-VP122PA600M7-L759F70T
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 24
>SPQ
Standard
<SPQ
Sample
Handling instructions for VINco E3 packages see vincotech.com website.
Package data
Package data for VINco E3 packages see vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
Change of Zth curves
Short circuit ratings added
1, 5
1, 6
A0-Vx122PA600M7-L759F70x-D5-14
24 Sep. 2019
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
17
24 Sep. 2019 / Revision 5
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