10-PY07NIA200S503-L366F53Y [VINCOTECH]
High speed and smooth switching;Low gate charge;Very low collector emitter saturation voltage;
| 型号： | 10-PY07NIA200S503-L366F53Y |
| 厂家： | 
VINCOTECH |
| 描述： | High speed and smooth switching;Low gate charge;Very low collector emitter saturation voltage |
| 文件： | 总30页 (文件大小：3742K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
10-PY07NIA200S503-L366F53Y
datasheet
flowNPC 1
1200 V / 200 A
Features
flow 1 12 mm housing
● Three-level topology
● Optimized for Solar applications
● Enhanced efficiency
● Low inductive package
Schematic
Target applications
● Solar Inverters
● UPS
Types
● 10-PY07NIA200S503-L366F53Y
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Buck Switch
VCES
IC
ICRM
Ptot
VGES
Tjmax
Collector-emitter voltage
650
158
600
223
±20
175
V
A
Collector current
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Repetitive peak collector current
Total power dissipation
Gate-emitter voltage
tp limited by Tjmax
Tj = Tjmax
A
W
V
Maximum junction temperature
°C
Copyright Vincotech
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10-PY07NIA200S503-L366F53Y
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Buck Diode
VRRM
IF
IFRM
Ptot
Peak repetitive reverse voltage
650
132
400
158
175
V
A
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
A
Tj = Tjmax
W
°C
Tjmax
Maximum junction temperature
Boost Switch
VCES
IC
Collector-emitter voltage
650
160
450
300
179
±20
175
V
A
Collector current
Tj = Tjmax
Ts = 80 °C
ICRM
Repetitive peak collector current
Turn off safe operating area
Total power dissipation
tp limited by Tjmax
Tj ≤ 175 °C, VCE ≤ 650 V
Tj = Tjmax
A
A
Ptot
VGES
Tjmax
Ts = 80 °C
W
V
Gate-emitter voltage
Maximum junction temperature
°C
Boost Diode
VRRM
IF
IFRM
Ptot
Peak repetitive reverse voltage
650
89
V
A
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
200
133
175
A
Tj = Tjmax
W
°C
Tjmax
Maximum junction temperature
Boost Sw.Inv.Diode
VRRM
IF
IFRM
Ptot
Peak repetitive reverse voltage
650
89
V
A
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
200
133
175
A
Tj = Tjmax
W
°C
Tjmax
Maximum junction temperature
Copyright Vincotech
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datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Module Properties
Thermal Properties
Storage temperature
Tstg
Tjop
-40…+125
°C
°C
Operation temperature under switching condition
Isolation Properties
-40…(Tjmax - 25)
DC Test Voltage*
AC Voltage
tp = 2 s
6000
2500
V
Visol
Isolation voltage
tp = 1 min
V
Creepage distance
min. 12,7
11,83
mm
mm
Clearance
Comparative Tracking Index
*100 % tested in production
CTI
> 200
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datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Buck Switch
Static
VGE(th)
Gate-emitter threshold voltage
VGE = VCE
0,002
200
25
3,2
4
4,8
V
V
25
1,39
1,48
1,51
1,75
Collector-emitter saturation voltage
VCEsat
15
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
650
0
25
25
200
400
µA
nA
Ω
20
none
12400
352
Cies
Coes
Cres
Qg
Output capacitance
f = 1 Mhz
0
25
25
25
pF
Reverse transfer capacitance
Gate charge
48
15
520
200
480
nC
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
0,43
K/W
25
52
58
58
Turn-on delay time
td(on)
125
150
25
11
Rise time
tr
125
150
25
125
150
25
125
150
25
125
150
25
12
13
152
177
181
12
Rgon = 2 Ω
Rgoff = 2 Ω
ns
Turn-off delay time
Fall time
td(off)
-5 / 15
350
120
tf
24
23
0,814
1,23
1,35
1,46
2,23
Qr
FWD
Qr
FWD
Qr
FWD
= 4,5 μC
= 8,7 μC
= 9,9 μC
Turn-on energy (per pulse)
Eon
mWs
125
Eoff
Turn-off energy (per pulse)
150
2,50
Copyright Vincotech
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datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Buck Diode
Static
25
125
150
1,50
1,44
1,42
1,92
10,6
VF
IR
Forward voltage
200
V
Reverse leakage current
650
25
µA
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
0,60
K/W
25
140
192
204
IRRM
125
150
25
Peak recovery current
A
47
trr
Qr
Reverse recovery time
125
150
25
125
150
25
125
150
25
125
150
68
75
ns
di/dt = 6591 A/μs
di/dt = 4747 A/μs
di/dt = 5247 A/μs
4,53
8,68
9,86
0,824
1,80
2,13
14082
7871
5212
-5 / 15
350
120
Recovered charge
μC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
(dirf/dt)max
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datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Boost Switch
Static
VGE(th)
Gate-emitter threshold voltage
VGE = VCE
0,002
150
25
4,2
5
5,8
V
V
25
1,10
1,08
1,09
1,45
VCEsat
Collector-emitter saturation voltage
15
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
650
0
25
25
80
µA
nA
Ω
20
200
none
23250
60
Cies
Cres
Qg
f = 1 Mhz
0
25
25
25
pF
Reverse transfer capacitance
Gate charge
15
520
150
872
nC
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
0,53
K/W
25
95
94
94
Turn-on delay time
td(on)
125
150
25
7
Rise time
tr
125
150
25
125
150
25
125
150
25
125
150
25
9
9
356
397
412
74
Rgon = 2 Ω
Rgoff = 2 Ω
ns
Turn-off delay time
Fall time
td(off)
-5 / 15
350
90
tf
73
65
0,450
0,682
0,849
4,431
6,677
Qr
FWD
Qr
FWD
Qr
FWD
= 3,2 μC
= 5,9 μC
= 6,7 μC
Turn-on energy (per pulse)
Eon
mWs
125
Eoff
Turn-off energy (per pulse)
150
7,032
Copyright Vincotech
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datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Boost Diode
Static
25
125
150
1,61
1,58
1,57
1,92
5,3
VF
IR
Forward voltage
100
V
Reverse leakage current
650
25
µA
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
0,71
K/W
25
103
130
137
IRRM
125
150
25
Peak recovery current
A
51
trr
Qr
Reverse recovery time
125
150
25
125
150
25
125
150
25
125
150
86
94
ns
di/dt = 8581 A/μs
3,178
5,859
6,736
0,763
1,449
1,630
2631
2254
2303
di/dt = 8320 A/μs -5 / 15
di/dt = 7500 A/μs
350
90
μC
Recovered charge
Erec
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
(dirf/dt)max
Boost Sw.Inv.Diode
Static
25
125
150
1,61
1,58
1,57
1,92
5,3
VF
IR
Forward voltage
100
V
Reverse leakage current
650
25
µA
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
0,71
K/W
Copyright Vincotech
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datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Thermistor
Rated resistance
R
ΔR/R
P
25
100
25
25
25
25
22
kΩ
%
Deviation of R100
Power dissipation
Power dissipation constant
B-value
R100 = 1484 Ω
-5
5
5
mW
mW/K
K
1,5
B(25/50) Tol. ±1 %
B(25/100) Tol. ±1 %
3962
4000
B-value
K
Vincotech NTC Reference
I
Copyright Vincotech
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10-PY07NIA200S503-L366F53Y
datasheet
Buck Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
I C = f(VCE
)
I C = f(VCE)
VGE
:
I
I
tp
=
250
15
μs
V
25 °C
125 °C
150 °C
tp
Tj
=
=
250
150
μs
°C
VGE
=
Tj:
VGE from
7 V to 17 V in steps of 1 V
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as function of pulse duration
I C = f(VGE
)
Z th(j-s) = f(tp)
100
I
Z
10-1
10-2
10-3
10-5
10-4
10-3
10-2
10-1
100
101
tp(s)
102
tp
=
100
10
μs
V
25 °C
125 °C
150 °C
D =
R th(j-s)
tp / T
VCE
=
Tj:
=
0,43
K/W
IGBT thermal model values
(K/W)
R
τ
(s)
4,84E-02
5,64E-02
1,45E-01
1,33E-01
3,13E-02
1,24E-02
4,77E+00
9,85E-01
1,55E-01
4,15E-02
6,49E-03
1,35E-03
Copyright Vincotech
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10-PY07NIA200S503-L366F53Y
datasheet
Buck Switch Characteristics
figure 5.
IGBT
figure 6.
IGBT
Gate voltage vs gate charge
Safe operating area
VGE = f(Q G
)
I C = f(VCE)
I
V
D =
single pulse
80 ºC
I C
=
200
A
Ts
=
VGE
=
±15
V
Tj =
Tjmax
Copyright Vincotech
10
12 Mar. 2019 / Revision 4
10-PY07NIA200S503-L366F53Y
datasheet
Buck Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
I F = f(VF)
Z th(j-s) = f(tp)
100
Z
10-1
10-2
10-4
=
10-3
10-2
10-1
100
101
102
tp
=
250
μs
25 °C
125 °C
150 °C
D =
tp / T
0,60
Tj:
R th(j-s)
K/W
FWD thermal model values
R (K/W)
τ
(s)
5,21E-02
1,03E-01
3,26E-01
6,99E-02
3,18E-02
1,65E-02
3,07E+00
4,73E-01
1,08E-01
2,85E-02
5,21E-03
6,69E-04
Copyright Vincotech
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datasheet
Boost Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
I C = f(VCE
)
I C = f(VCE)
VGE
:
I
I
tp
=
250
15
μs
V
25 °C
125 °C
150 °C
tp
Tj
=
250
150
μs
°C
VGE
=
Tj:
=
VGE from
7 V to 17 V in steps of 1 V
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as function of pulse duration
I C = f(VGE
)
Z th(j-s) = f(tp)
100
I
Z
10-1
10-2
10-3
10-5
10-4
10-3
10-2
10-1
100
101
tp(s)
102
tp
=
100
10
μs
V
25 °C
125 °C
150 °C
D =
R th(j-s)
tp / T
VCE
=
Tj:
=
0,53
K/W
IGBT thermal model values
(K/W)
R
τ
(s)
1,45E-01
1,58E-01
1,60E-01
4,03E-02
2,74E-02
1,46E+00
2,17E-01
5,54E-02
1,46E-02
1,18E-03
Copyright Vincotech
12
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datasheet
Boost Switch Characteristics
figure 5.
IGBT
figure 6.
IGBT
Gate voltage vs gate charge
Safe operating area
VGE = f(Q G
)
I C = f(VCE)
I
V
D =
single pulse
80 ºC
I C
=
150
A
Ts
=
VGE
=
±15
V
Tj =
Tjmax
Copyright Vincotech
13
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datasheet
Boost Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
I F = f(VF)
Z th(j-s) = f(tp)
100
Z
10-1
10-2
10-4
=
10-3
10-2
10-1
100
101
102
tp
=
250
μs
25 °C
125 °C
150 °C
D =
tp / T
0,71
Tj:
R th(j-s)
K/W
FWD thermal model values
R (K/W)
τ
(s)
3,89E-02
7,15E-02
1,49E-01
2,38E-01
1,36E-01
3,72E-02
4,26E-02
5,80E+00
1,25E+00
1,96E-01
5,23E-02
1,12E-02
2,44E-03
3,69E-04
Copyright Vincotech
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10-PY07NIA200S503-L366F53Y
datasheet
Boost Sw.Inv.Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
I F = f(VF)
Z th(j-s) = f(tp)
100
Z
10-1
10-2
10-4
=
10-3
10-2
10-1
100
101
102
tp
=
250
μs
25 °C
125 °C
150 °C
D =
tp / T
0,71
Tj:
R th(j-s)
K/W
FWD thermal model values
R (K/W)
τ
(s)
3,89E-02
7,15E-02
1,49E-01
2,38E-01
1,36E-01
3,72E-02
4,26E-02
5,80E+00
1,25E+00
1,96E-01
5,23E-02
1,12E-02
2,44E-03
3,69E-04
Thermistor Characteristics
Typical Thermistor resistance values
figure 1.
Thermistor
Typical NTC characteristic as a function of temperature
as a function of temperature
R = f(T)
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datasheet
Buck Switching Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(R g)
E = f(I C
)
E
E
With an inductive load at
25 °C
With an inductive load at
25 °C
350
V
V
Ω
Ω
350
-5 / 15
120
V
V
A
VCE
VGE
=
=
=
=
Tj:
VCE
VGE
I C
=
=
=
Tj:
125 °C
150 °C
125 °C
150 °C
-5 / 15
R gon
R goff
2
2
figure 3.
FWD
figure 4.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(I c)
Erec = f(R g)
E
E
With an inductive load at
25 °C
With an inductive load at
25 °C
350
-5 / 15
2
V
V
Ω
350
-5 / 15
120
V
V
A
VCE
VGE
=
=
=
Tj:
VCE
VGE
I C
=
=
=
Tj:
125 °C
150 °C
125 °C
150 °C
R gon
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datasheet
Buck Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(I C
)
t = f(R g)
t
t
With an inductive load at
With an inductive load at
150
350
-5 / 15
2
°C
V
150
°C
V
Tj =
Tj =
350
VCE
=
=
=
=
VCE
=
=
=
V
-5 / 15
120
V
VGE
R gon
R goff
VGE
I C
Ω
Ω
A
2
figure 7.
FWD
figure 8.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
t rr = f(I C
)
trr = f(R gon
)
t
t
350
At
VCE
=
V
V
Ω
At
VCE
=
350
V
V
A
25 °C
25 °C
-5 / 15
2
-5 / 15
120
VGE
R gon
=
=
Tj:
VGE
I C
=
Tj:
125 °C
150 °C
125 °C
150 °C
=
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datasheet
Buck Switching Characteristics
figure 9.
FWD
figure 10.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of IGBT turn on gate resistor
Q r = f(I C
)
Q r = f(R gon)
Q
Q
350
-5 / 15
2
V
V
Ω
350
-5 / 15
120
V
V
A
At
VCE
VGE
R gon
=
At
VCE
VGE
I C
=
25 °C
25 °C
=
Tj:
=
Tj:
125 °C
150 °C
125 °C
150 °C
=
=
figure 11.
FWD
figure 12.
FWD
Typical peak reverse recovery current current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
I RM = f(I C
)
I RM = f(R gon)
I
I
350
-5 / 15
2
V
V
Ω
350
-5 / 15
120
V
V
A
At
VCE
=
At
VCE
VGE
I C
=
25 °C
25 °C
VGE
=
=
Tj:
=
Tj:
125 °C
150 °C
125 °C
150 °C
R gon
=
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datasheet
Buck Switching Characteristics
figure 13.
FWD
figure 14.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor
di F/dt, di rr/dt = f(I C
)
di F/dt, di rr/dt = f(R gon)
diF/dt
diF/
dt
t
i
t
dirr/dt
dirr
/
dt
i
350
V
V
Ω
25 °C
125 °C
150 °C
350
V
V
A
25 °C
At
VCE
=
At
VCE
VGE
I C
=
-5 / 15
2
:
Tj
-5 / 15
120
:
Tj
125 °C
150 °C
VGE
R gon
=
=
=
=
figure 15.
IGBT
Reverse bias safe operating area
I C = f(VCE
)
I
IC MAX
I
I
V
At
Tj
=
=
=
175
°C
Ω
R gon
R goff
4
4
Ω
Copyright Vincotech
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12 Mar. 2019 / Revision 4
10-PY07NIA200S503-L366F53Y
datasheet
Buck Switching Definitions
General conditions
=
=
=
125 °C
2 Ω
T j
Rgon
R goff
2 Ω
figure 1.
IGBT
figure 2.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
-5
V
-5
V
VGE (0%) =
VGE (0%) =
15
V
15
V
VGE (100%) =
VC (100%) =
I C (100%) =
VGE (100%) =
VC (100%) =
I C (100%) =
350
120
177
V
350
120
58
V
A
A
t doff
=
ns
tdon
=
ns
figure 3.
IGBT
figure 4.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
VC (100%) =
I C (100%) =
t f =
350
120
24
V
VC (100%) =
I C (100%) =
350
120
12
V
A
A
ns
ns
tr
=
Copyright Vincotech
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12 Mar. 2019 / Revision 4
10-PY07NIA200S503-L366F53Y
datasheet
Buck Switching Characteristics
figure 5.
FWD
figure 6.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
Qr
IF
IF
fitted
VF
350
120
192
68
V
120
A
VF (100%) =
I F (100%) =
I RRM (100%) =
I F (100%) =
Q r (100%) =
A
8,68
μC
A
ns
t rr
=
Copyright Vincotech
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12 Mar. 2019 / Revision 4
10-PY07NIA200S503-L366F53Y
datasheet
Boost Switching Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(R g)
E = f(I C
)
E
E
With an inductive load at
25 °C
With an inductive load at
25 °C
350
V
V
Ω
Ω
350
-5 / 15
90
V
V
A
VCE
VGE
=
=
=
=
Tj:
VCE
VGE
I C
=
=
=
Tj:
125 °C
150 °C
125 °C
150 °C
-5 / 15
R gon
R goff
2
2
figure 3.
FWD
figure 4.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(I c)
Erec = f(R g)
E
E
With an inductive load at
25 °C
With an inductive load at
25 °C
350
-5 / 15
2
V
V
Ω
350
-5 / 15
90
V
V
A
VCE
VGE
=
=
=
Tj:
VCE
VGE
I C
=
=
=
Tj:
125 °C
150 °C
125 °C
150 °C
R gon
Copyright Vincotech
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12 Mar. 2019 / Revision 4
10-PY07NIA200S503-L366F53Y
datasheet
Boost Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(I C
)
t = f(R g)
t
t
With an inductive load at
With an inductive load at
150
350
-5 / 15
2
°C
V
150
°C
V
Tj =
Tj =
350
VCE
=
=
=
=
VCE
=
=
=
VGE
R gon
R goff
V
VGE
I C
-5 / 15
90
V
Ω
Ω
A
2
figure 7.
FWD
figure 8.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
t rr = f(I C
)
trr = f(R gon
)
t
t
350
V
V
Ω
350
V
V
A
At
VCE
=
At
VCE =
25 °C
25 °C
-5 / 15
2
-5 / 15
90
VGE
R gon
=
=
Tj:
VGE
I C
=
Tj:
125 °C
150 °C
125 °C
150 °C
=
Copyright Vincotech
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12 Mar. 2019 / Revision 4
10-PY07NIA200S503-L366F53Y
datasheet
Boost Switching Characteristics
figure 9.
FWD
figure 10.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of IGBT turn on gate resistor
Q r = f(I C
)
Q r = f(R gon)
Q
Q
350
-5 / 15
2
V
V
Ω
350
-5 / 15
90
V
V
A
At
VCE
VGE
R gon
=
At
VCE
VGE
I C
=
25 °C
25 °C
=
Tj:
=
Tj:
125 °C
150 °C
125 °C
150 °C
=
=
figure 11.
FWD
figure 12.
FWD
Typical peak reverse recovery current current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
I RM = f(I C
)
I RM = f(R gon)
I
I
350
-5 / 15
2
V
V
Ω
350
-5 / 15
90
V
V
A
At
VCE
=
At
VCE
VGE
I C
=
25 °C
25 °C
VGE
=
=
Tj:
=
Tj:
125 °C
150 °C
125 °C
150 °C
R gon
=
Copyright Vincotech
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12 Mar. 2019 / Revision 4
10-PY07NIA200S503-L366F53Y
datasheet
Boost Switching Characteristics
figure 13.
FWD
figure 14.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor
di F/dt, di rr/dt = f(I C
)
di F/dt, di rr/dt = f(R gon)
d
iF/dt
d
iF/
dt
t
i
t
i
dirr/dt
dirr
/
dt
350
At
VCE
=
V
V
Ω
25 °C
125 °C
150 °C
At
VCE
VGE
I C
=
350
V
V
A
25 °C
-5 / 15
2
:
Tj
=
-5 / 15
90
:
Tj
125 °C
150 °C
VGE
R gon
=
=
=
figure 15.
IGBT
Reverse bias safe operating area
I C = f(VCE
)
I
IC MAX
I
I
V
At
175
°C
Ω
Tj
=
=
=
2
2
R gon
R goff
Ω
Copyright Vincotech
25
12 Mar. 2019 / Revision 4
10-PY07NIA200S503-L366F53Y
datasheet
Boost Switching Definitions
General conditions
=
=
=
125 °C
2 Ω
T j
Rgon
R goff
2 Ω
figure 1.
IGBT
figure 2.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
-5
V
-5
V
VGE (0%) =
VGE (0%) =
15
V
15
V
VGE (100%) =
VC (100%) =
I C (100%) =
VGE (100%) =
VC (100%) =
I C (100%) =
350
90
V
350
90
V
A
A
t doff
=
397
ns
tdon
=
94
ns
figure 3.
IGBT
figure 4.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
VC (100%) =
I C (100%) =
t f =
350
90
V
VC (100%) =
I C (100%) =
350
90
9
V
A
A
73
ns
ns
tr
=
Copyright Vincotech
26
12 Mar. 2019 / Revision 4
10-PY07NIA200S503-L366F53Y
datasheet
Boost Switching Characteristics
figure 5.
FWD
figure 6.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
Qr
IF
IF
fitted
VF
350
90
V
90
A
VF (100%) =
I F (100%) =
I RRM (100%) =
I F (100%) =
Q r (100%) =
A
5,86
μC
130
86
A
ns
t rr
=
Copyright Vincotech
27
12 Mar. 2019 / Revision 4
10-PY07NIA200S503-L366F53Y
datasheet
Ordering Code & Marking
Version
without thermal paste 12 mm housing with press-fit pins
with thermal paste 12 mm housing with press-fit pins
Ordering Code
10-PY07NIA200S503-L366F53Y
10-PY07NIA200S503-L366F53Y-/3/
Name
Date code
WWYY
Serial
UL & VIN
UL VIN
Lot
Serial
NN-NNNNNNNNNNNNNN
TTTTTTVV WWYY UL
VIN LLLLL SSSS
Text
NN-NNNNNNNNNNNNNN-TTTTTTVV
LLLLL
SSSS
Type&Ver
Lot number
Date code
WWYY
Datamatrix
TTTTTTTVV
LLLLL
SSSS
Outline
Pin table
Pin
1
X
Y
6,9
0
Function
Therm1
52,2
52,2
36,2
33,2
33,2
9,2
2
Therm2
S4
3
6,75
7,9
4,9
5,75
6,9
3,9
0
4
G14
G18
S2
5
6
7
6,2
G12
G16
DC-
DC-
8
6,2
9
2,7
10
0
0
11
12
13
2,7
0
2,7
2,7
2,7
5,4
DC-
DC-
DC-
14
15
16
17
18
19
20
21
22
0
2,7
0
5,4
DC-
12,75
12,75
15,45
15,45
22,8
GND
GND
GND
GND
DC+
DC+
DC+
DC+
2,7
0
2,7
0
22,8
2,7
0
25,5
25,5
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
2,7
0
28,2
28,2
22,45
21,3
24,3
22,15
21
DC+
DC+
S1
18,3
21,3
21,3
43
G15
G11
S3
46
G17
G13
Ph
46
24
52,2
49,5
52,2
49,5
52,2
49,5
52,2
20,1
22,8
22,8
25,5
25,5
28,2
28,2
Ph
Ph
Ph
Ph
Ph
Ph
Copyright Vincotech
28
12 Mar. 2019 / Revision 4
10-PY07NIA200S503-L366F53Y
datasheet
Pinout
Identification
ID
Component
Voltage
Current
Function
Comment
Parallel devices with separate control.
Values apply to complete device.
T11, T12, T15, T16
IGBT
650 V
200 A
200 A
150 A
100 A
100 A
Buck Switch
D11, D12
T13, T14, T17, T18
D13, D14, D17, D18
D15, D16, D19, D20
Rt
FWD
IGBT
FWD
Diode
NTC
650 V
650 V
650 V
650 V
Buck Diode
Boost Switch
Boost Diode
Parallel devices with separate control.
Values apply to complete device.
Parallel devices.
Values apply to complete device.
Parallel devices.
Values apply to complete device.
Boost Sw.Inv.Diode
Thermistor
Copyright Vincotech
29
12 Mar. 2019 / Revision 4
10-PY07NIA200S503-L366F53Y
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 100
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow 1 packages see vincotech.com website.
Package data
Package data for flow 1 packages see vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
10-PY07NIA200S503-L366F53Y-D4-14
12 Mar. 2019
Correction of Ic/If values
2
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
30
12 Mar. 2019 / Revision 4
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