首页 |元器件品牌

10-PY07BIA050RG01-M523E88Y [VINCOTECH]

High efficiency in hard switching and resonant topologies;High speed switching;Low gate charge;
10-PY07BIA050RG01-M523E88Y
型号： 10-PY07BIA050RG01-M523E88Y
厂家： VINCOTECH    VINCOTECH
描述：

High efficiency in hard switching and resonant topologies;High speed switching;Low gate charge
文件： 总32页 (文件大小：9003K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
 查看货源
10-PY07BIA050RG01-M523E88Y  
datasheet  
flowSOL 1 BI (TL)  
650 V / 50 A  
Topology features  
flow 1 12 mm housing  
● Dual Booster + H-Bridge  
● Kelvin Emitter for improved switching performance  
● Integrated DC capacitor  
● Temperature sensor  
Component features  
● High efficiency in hard switching and resonant topologies  
● High speed switching  
● Low gate charge  
Housing features  
● Base isolation: Al2O3  
● Convex shaped substrate for superior thermal contact  
● Thermo-mechanical push-and-pull force relief  
● Press-fit pin  
Schematic  
● Reliable cold welding connection  
Target applications  
● Power Supply  
● Solar Inverters  
● Welding & Cutting  
Types  
● 10-PY07BIA050RG01-M523E88Y  
Copyright Vincotech  
1
19 Apr. 2023 / Revision 1  
10-PY07BIA050RG01-M523E88Y  
datasheet  
Maximum Ratings  
Tj = 25 °C, unless otherwise specified  
Parameter  
Symbol  
Conditions  
Value  
Unit  
Inverter Switch  
VCES  
Collector-emitter voltage  
650  
46  
V
A
IC  
Collector current (DC current)  
Repetitive peak collector current  
Total power dissipation  
Tj = Tjmax  
Ts = 80 °C  
Ts = 80 °C  
ICRM  
tp limited by Tjmax  
Tj = Tjmax  
200  
77  
A
Ptot  
W
V
VGES  
Gate-emitter voltage  
±30  
175  
Tjmax  
Maximum junction temperature  
°C  
Inverter Diode  
VRRM  
Peak repetitive reverse voltage  
650  
30  
V
A
IF  
Forward current (DC current)  
Repetitive peak forward current  
Total power dissipation  
Tj = Tjmax  
Ts = 80 °C  
Ts = 80 °C  
IFRM  
tp limited by Tjmax  
Tj = Tjmax  
120  
53  
A
Ptot  
W
°C  
Tjmax  
Maximum junction temperature  
175  
Boost Switch  
VCES  
Collector-emitter voltage  
650  
46  
V
A
IC  
Collector current (DC current)  
Repetitive peak collector current  
Total power dissipation  
Tj = Tjmax  
Ts = 80 °C  
Ts = 80 °C  
ICRM  
tp limited by Tjmax  
Tj = Tjmax  
200  
77  
A
Ptot  
W
V
VGES  
Gate-emitter voltage  
±30  
175  
Tjmax  
Maximum junction temperature  
°C  
Copyright Vincotech  
2
19 Apr. 2023 / Revision 1  
10-PY07BIA050RG01-M523E88Y  
datasheet  
Maximum Ratings  
Tj = 25 °C, unless otherwise specified  
Parameter  
Symbol  
Conditions  
Value  
Unit  
Boost Diode  
VRRM  
Peak repetitive reverse voltage  
650  
30  
V
A
IF  
Forward current (DC current)  
Repetitive peak forward current  
Total power dissipation  
Tj = Tjmax  
Ts = 80 °C  
Ts = 80 °C  
IFRM  
tp limited by Tjmax  
Tj = Tjmax  
120  
53  
A
Ptot  
W
°C  
Tjmax  
Maximum junction temperature  
175  
Boost Sw. Protection Diode  
VRRM  
Peak repetitive reverse voltage  
Forward current (DC current)  
Surge (non-repetitive) forward current  
Surge current capability  
1600  
31  
V
A
IF  
IFSM  
I2t  
Tj = Tjmax  
Ts = 80 °C  
Tj = 150 °C  
Ts = 80 °C  
200  
200  
37  
A
Single Half Sine Wave,  
tp = 10 ms  
A2s  
W
°C  
Ptot  
Total power dissipation  
Tj = Tjmax  
Tjmax  
Maximum junction temperature  
150  
ByPass Diode  
VRRM  
Peak repetitive reverse voltage  
1600  
38  
V
A
IF  
Forward current (DC current)  
Surge (non-repetitive) forward current  
Surge current capability  
Tj = Tjmax  
Ts = 80 °C  
Tj = 150 °C  
Ts = 80 °C  
IFSM  
I2t  
270  
370  
47  
A
Single Half Sine Wave,  
tp = 10 ms  
A2s  
W
°C  
Ptot  
Total power dissipation  
Tj = Tjmax  
Tjmax  
Maximum junction temperature  
150  
Capacitor (DC)  
VMAX  
Maximum DC voltage  
630  
V
Top  
Operation Temperature  
-55 ... 125  
°C  
Copyright Vincotech  
3
19 Apr. 2023 / Revision 1  
10-PY07BIA050RG01-M523E88Y  
datasheet  
Maximum Ratings  
Tj = 25 °C, unless otherwise specified  
Parameter  
Symbol  
Conditions  
Value  
Unit  
Module Properties  
Thermal Properties  
Tstg  
Tjop  
Storage temperature  
-40…+125  
°C  
°C  
Operation temperature under switching  
condition  
-40…+(Tjmax - 25)  
Isolation Properties  
Isolation voltage  
Isolation voltage  
Creepage distance  
Clearance  
Visol  
Visol  
DC Test Voltage*  
tp = 2 s  
6000  
2500  
V
AC Voltage  
tp = 1 min  
V
>12,7  
>12,7  
≥ 200  
mm  
mm  
Comparative Tracking Index  
*100 % tested in production  
CTI  
Copyright Vincotech  
4
19 Apr. 2023 / Revision 1  
10-PY07BIA050RG01-M523E88Y  
datasheet  
Characteristic Values  
Symbol  
Parameter  
Conditions  
Values  
Typ  
Unit  
VCE [V] IC [A]  
VDS [V] ID [A] Tj [°C]  
VGE [V]  
VGS [V]  
Min  
Max  
VF [V]  
IF [A]  
Inverter Switch  
Static  
VGE(th)  
Gate-emitter threshold voltage  
5
0,033  
50  
25  
5
6
7
V
V
25  
1,5  
1,66  
1,7  
1,9(1)  
VCEsat  
Collector-emitter saturation voltage  
15  
125  
150  
ICES  
IGES  
rg  
Collector-emitter cut-off current  
Gate-emitter leakage current  
Internal gate resistance  
Input capacitance  
0
650  
0
25  
25  
0,01  
0,2  
mA  
µA  
Ω
30  
None  
4200  
104  
79  
Cies  
Coes  
Cres  
Qg  
pF  
pF  
pF  
nC  
Output capacitance  
f = 1 Mhz  
0
30  
25  
25  
Reverse transfer capacitance  
Gate charge  
15  
400  
50  
141  
Thermal  
λpaste = 3,4 W/mK  
(PSX)  
Thermal resistance junction to sink(2)  
Dynamic  
1,23  
K/W  
Rth(j-s)  
25  
40,81  
39,51  
39,15  
12,62  
13,65  
13,73  
99,13  
112,72  
116,47  
31,36  
41,1  
td(on)  
Turn-on delay time  
Rise time  
125  
150  
25  
ns  
ns  
tr  
125  
150  
25  
Rgon = 8 Ω  
Rgoff = 8 Ω  
td(off)  
Turn-off delay time  
Fall time  
125  
150  
25  
ns  
-5/15  
350  
50  
tf  
125  
150  
25  
ns  
45,18  
0,252  
0,348  
0,375  
0,775  
1,01  
QrFWD=1,33 µC  
QrFWD=1,71 µC  
QrFWD=2,28 µC  
Eon  
Turn-on energy (per pulse)  
Turn-off energy (per pulse)  
125  
150  
25  
mWs  
mWs  
Eoff  
125  
150  
1,09  
Copyright Vincotech  
5
19 Apr. 2023 / Revision 1  
10-PY07BIA050RG01-M523E88Y  
datasheet  
Characteristic Values  
Symbol  
Parameter  
Conditions  
Values  
Typ  
Unit  
VCE [V] IC [A]  
VDS [V] ID [A] Tj [°C]  
VGE [V]  
VGS [V]  
Min  
Max  
VF [V]  
IF [A]  
Inverter Diode  
Static  
25  
1,58  
1,75  
1,69  
1,9(1)  
VF  
IR  
Forward voltage  
30  
125  
150  
V
Reverse leakage current  
Thermal  
Vr = 650 V  
25  
10  
µA  
λpaste = 3,4 W/mK  
(PSX)  
Thermal resistance junction to sink(2)  
Dynamic  
1,8  
K/W  
Rth(j-s)  
25  
74,42  
80,11  
82,98  
33,25  
41,83  
83,95  
1,33  
IRM  
Peak recovery current  
125  
150  
25  
A
trr  
Reverse recovery time  
125  
150  
25  
ns  
di/dt=5312 A/µs  
di/dt=4539 A/µs  
di/dt=4370 A/µs  
Qr  
Recovered charge  
-5/15  
350  
50  
125  
150  
25  
1,71  
μC  
2,28  
0,359  
0,433  
0,601  
4295,85  
4309,19  
4316,74  
Erec  
Reverse recovered energy  
Peak rate of fall of recovery current  
125  
150  
25  
mWs  
A/µs  
(dirf/dt)max  
125  
150  
Copyright Vincotech  
6
19 Apr. 2023 / Revision 1  
10-PY07BIA050RG01-M523E88Y  
datasheet  
Characteristic Values  
Symbol  
Parameter  
Conditions  
Values  
Typ  
Unit  
VCE [V] IC [A]  
VDS [V] ID [A] Tj [°C]  
VGE [V]  
VGS [V]  
Min  
Max  
VF [V]  
IF [A]  
Boost Switch  
Static  
VGE(th)  
Gate-emitter threshold voltage  
5
0,033  
50  
25  
5
6
7
V
V
25  
1,5  
1,66  
1,7  
1,9(1)  
VCEsat  
Collector-emitter saturation voltage  
15  
125  
150  
ICES  
IGES  
rg  
Collector-emitter cut-off current  
Gate-emitter leakage current  
Internal gate resistance  
Input capacitance  
0
650  
0
25  
25  
0,01  
0,2  
mA  
µA  
Ω
30  
None  
4200  
104  
79  
Cies  
Coes  
Cres  
Qg  
pF  
pF  
pF  
nC  
Output capacitance  
f = 1 Mhz  
0
30  
25  
25  
Reverse transfer capacitance  
Gate charge  
15  
400  
50  
141  
Thermal  
λpaste = 3,4 W/mK  
(PSX)  
Thermal resistance junction to sink(2)  
Dynamic  
1,23  
K/W  
Rth(j-s)  
25  
25,88  
23,52  
23,08  
12,17  
13,08  
13,16  
149,94  
168,51  
173,78  
27,43  
40  
td(on)  
Turn-on delay time  
Rise time  
125  
150  
25  
ns  
ns  
tr  
125  
150  
25  
Rgon = 8 Ω  
Rgoff = 8 Ω  
td(off)  
Turn-off delay time  
Fall time  
125  
150  
25  
ns  
0/15  
400  
50  
tf  
125  
150  
25  
ns  
43,86  
0,371  
0,457  
0,484  
0,88  
QrFWD=1,37 µC  
QrFWD=1,87 µC  
QrFWD=2,12 µC  
Eon  
Turn-on energy (per pulse)  
Turn-off energy (per pulse)  
125  
150  
25  
mWs  
mWs  
Eoff  
125  
150  
1,16  
1,23  
Copyright Vincotech  
7
19 Apr. 2023 / Revision 1  
10-PY07BIA050RG01-M523E88Y  
datasheet  
Characteristic Values  
Symbol  
Parameter  
Conditions  
Values  
Typ  
Unit  
VCE [V] IC [A]  
VDS [V] ID [A] Tj [°C]  
VGE [V]  
VGS [V]  
Min  
Max  
VF [V]  
IF [A]  
Boost Diode  
Static  
25  
1,58  
1,75  
1,69  
1,9(1)  
VF  
IR  
Forward voltage  
30  
125  
150  
V
Reverse leakage current  
Thermal  
Vr = 650 V  
25  
10  
µA  
λpaste = 3,4 W/mK  
(PSX)  
Thermal resistance junction to sink(2)  
Dynamic  
1,8  
K/W  
Rth(j-s)  
25  
70,24  
73,81  
75,53  
35,68  
70,71  
81,8  
IRM  
Peak recovery current  
125  
150  
25  
A
trr  
Reverse recovery time  
125  
150  
25  
ns  
1,37  
di/dt=5458 A/µs  
di/dt=4754 A/µs  
di/dt=4534 A/µs  
Qr  
Recovered charge  
0/15  
400  
50  
125  
150  
25  
1,87  
μC  
2,12  
0,392  
0,535  
0,614  
3354,88  
3619,62  
3472,77  
Erec  
Reverse recovered energy  
Peak rate of fall of recovery current  
125  
150  
25  
mWs  
A/µs  
(dirf/dt)max  
125  
150  
Copyright Vincotech  
8
19 Apr. 2023 / Revision 1  
10-PY07BIA050RG01-M523E88Y  
datasheet  
Characteristic Values  
Symbol  
Parameter  
Conditions  
Values  
Typ  
Unit  
VCE [V] IC [A]  
VDS [V] ID [A] Tj [°C]  
VF [V] IF [A]  
VGE [V]  
VGS [V]  
Min  
Max  
Boost Sw. Protection Diode  
Static  
25  
1,12  
1,03  
1,02  
1,5(1)  
VF  
IR  
Forward voltage  
18  
125  
150  
25  
V
100  
Reverse leakage current  
Thermal  
Vr = 1600 V  
µA  
150  
1000  
λpaste = 3,4 W/mK  
(PSX)  
Thermal resistance junction to sink(2)  
1,87  
K/W  
Rth(j-s)  
ByPass Diode  
Static  
25  
1,15  
1,1  
1,5(1)  
VF  
IR  
Forward voltage  
28  
V
125  
25  
100  
Reverse leakage current  
Vr = 1600 V  
µA  
150  
1000  
Thermal  
λpaste = 3,4 W/mK  
(PSX)  
Thermal resistance junction to sink(2)  
1,5  
K/W  
Rth(j-s)  
Capacitor (DC)  
Static  
DC bias voltage =  
0 V  
C
Capacitance  
25  
25  
47  
nF  
%
%
Tolerance  
-10  
10  
Dissipation factor  
f = 1 kHz  
2,5  
Copyright Vincotech  
9
19 Apr. 2023 / Revision 1  
10-PY07BIA050RG01-M523E88Y  
datasheet  
Characteristic Values  
Symbol  
Parameter  
Conditions  
Values  
Typ  
Unit  
VCE [V] IC [A]  
VDS [V] ID [A] Tj [°C]  
VF [V] IF [A]  
VGE [V]  
VGS [V]  
Min  
Max  
Thermistor  
Static  
R
ΔR/R  
P
Rated resistance  
Deviation of R100  
Power dissipation  
Power dissipation constant  
B-value  
25  
22  
kΩ  
%
R100 = 1484 Ω  
100  
25  
-5  
5
130  
1,5  
mW  
mW/K  
K
d
25  
B(25/50)  
Tol. ±1 %  
Tol. ±1 %  
3962  
4000  
B(25/100)  
B-value  
K
Vincotech Thermistor Reference  
I
(1)  
Value at chip level  
(2)  
Only valid with pre-applied Vincotech thermal interface material.  
Copyright Vincotech  
10  
19 Apr. 2023 / Revision 1  
10-PY07BIA050RG01-M523E88Y  
datasheet  
Inverter Switch Characteristics  
figure 1.  
IGBT  
figure 2.  
IGBT  
Typical output characteristics  
Typical output characteristics  
IC = f(VCE  
)
IC = f(VCE)  
150  
150  
VGE  
:
7 V  
8 V  
125  
100  
75  
50  
25  
0
125  
100  
75  
50  
25  
0
9 V  
10 V  
11 V  
12 V  
13 V  
14 V  
15 V  
16 V  
17 V  
0,0  
0,5  
1,0  
1,5  
2,0  
2,5  
3,0  
0,0  
0,5  
1,0  
1,5  
2,0  
2,5  
3,0  
V
CE(V)  
VCE(V)  
tp  
=
tp  
=
250  
15  
μs  
V
250  
150  
μs  
°C  
25 °C  
VGE  
=
Tj =  
125 °C  
150 °C  
Tj:  
VGE from 7 V to 17 V in steps of 1 V  
figure 3.  
IGBT  
figure 4.  
IGBT  
Typical transfer characteristics  
Transient thermal impedance as a function of pulse width  
IC = f(VGE  
)
Zth(j-s) = f(tp)  
1
50  
10  
40  
30  
20  
10  
0
10  
-1  
10  
0,5  
0,2  
0,1  
-2  
10  
0,05  
0,02  
0,01  
0,005  
0
-3  
0
0
10  
-5  
-4  
10  
-3  
10  
-2  
10  
-1  
10  
0
10  
1
10  
2
2
4
6
8
10  
10  
10  
tp(s)  
V
GE(V)  
tp  
VCE  
=
=
250  
10  
μs  
V
D =  
tp / T  
1,228  
25 °C  
125 °C  
150 °C  
Rth(j-s) =  
Tj:  
K/W  
IGBT thermal model values  
R (K/W)  
τ (s)  
5,07E-02  
1,43E-01  
5,97E-01  
2,58E-01  
1,27E-01  
5,33E-02  
3,25E+00  
5,26E-01  
9,03E-02  
2,71E-02  
5,65E-03  
7,25E-04  
Copyright Vincotech  
11  
19 Apr. 2023 / Revision 1  
10-PY07BIA050RG01-M523E88Y  
datasheet  
Inverter Switch Characteristics  
figure 5.  
IGBT  
Safe operating area  
IC = f(VCE  
)
1000  
100  
10  
1
0,1  
0,01  
1
10  
100  
1000  
10000  
V
CE(V)  
D =  
single pulse  
Ts =  
80  
15  
°C  
V
VGE  
=
Tj =  
Tjmax  
Copyright Vincotech  
12  
19 Apr. 2023 / Revision 1  
10-PY07BIA050RG01-M523E88Y  
datasheet  
Inverter Diode Characteristics  
figure 6.  
FWD  
figure 7.  
FWD  
Typical forward characteristics  
Transient thermal impedance as a function of pulse width  
IF = f(VF)  
Zth(j-s) = f(tp)  
1
80  
60  
40  
20  
0
10  
0
10  
-1  
10  
0,5  
0,2  
0,1  
-2  
10  
0,05  
0,02  
0,01  
0,005  
0
-3  
10  
-5  
-4  
10  
-3  
10  
-2  
10  
-1  
10  
0
1
2
0,0  
0,5  
1,0  
1,5  
2,0  
2,5  
3,0  
10  
10  
10  
10  
tp(s)  
VF(V)  
tp  
=
250  
μs  
D =  
tp / T  
1,803  
25 °C  
125 °C  
150 °C  
Rth(j-s) =  
Tj:  
K/W  
FWD thermal model values  
R (K/W)  
τ (s)  
5,16E-02  
1,29E-01  
6,80E-01  
4,86E-01  
3,20E-01  
1,36E-01  
5,27E+00  
5,85E-01  
8,65E-02  
2,55E-02  
5,42E-03  
7,50E-04  
Copyright Vincotech  
13  
19 Apr. 2023 / Revision 1  
10-PY07BIA050RG01-M523E88Y  
datasheet  
Boost Switch Characteristics  
figure 8.  
IGBT  
figure 9.  
IGBT  
Typical output characteristics  
Typical output characteristics  
IC = f(VCE  
)
IC = f(VCE)  
150  
150  
VGE  
:
7 V  
8 V  
125  
100  
75  
50  
25  
0
125  
100  
75  
50  
25  
0
9 V  
10 V  
11 V  
12 V  
13 V  
14 V  
15 V  
16 V  
17 V  
0,0  
0,5  
1,0  
1,5  
2,0  
2,5  
3,0  
0,0  
0,5  
1,0  
1,5  
2,0  
2,5  
3,0  
V
CE(V)  
VCE(V)  
tp  
=
tp  
=
250  
15  
μs  
V
250  
150  
μs  
°C  
25 °C  
VGE  
=
Tj =  
125 °C  
150 °C  
Tj:  
VGE from 7 V to 17 V in steps of 1 V  
figure 10.  
IGBT  
figure 11.  
IGBT  
Typical transfer characteristics  
Transient thermal impedance as a function of pulse width  
IC = f(VGE  
)
Zth(j-s) = f(tp)  
1
50  
10  
40  
30  
20  
10  
0
10  
-1  
10  
0,5  
0,2  
0,1  
-2  
10  
0,05  
0,02  
0,01  
0,005  
0
-3  
0
0
10  
-5  
-4  
10  
-3  
10  
-2  
10  
-1  
10  
0
10  
1
10  
2
2
4
6
8
10  
10  
10  
tp(s)  
V
GE(V)  
tp  
VCE  
=
=
250  
10  
μs  
V
D =  
tp / T  
1,228  
25 °C  
125 °C  
150 °C  
Rth(j-s) =  
Tj:  
K/W  
IGBT thermal model values  
R (K/W)  
τ (s)  
5,07E-02  
1,43E-01  
5,97E-01  
2,58E-01  
1,27E-01  
5,33E-02  
3,25E+00  
5,26E-01  
9,03E-02  
2,71E-02  
5,65E-03  
7,25E-04  
Copyright Vincotech  
14  
19 Apr. 2023 / Revision 1  
10-PY07BIA050RG01-M523E88Y  
datasheet  
Boost Switch Characteristics  
figure 12.  
IGBT  
Safe operating area  
IC = f(VCE  
)
1000  
100  
10  
1
0,1  
0,01  
1
10  
100  
1000  
10000  
V
CE(V)  
D =  
single pulse  
Ts =  
80  
15  
°C  
V
VGE  
=
Tj =  
Tjmax  
Copyright Vincotech  
15  
19 Apr. 2023 / Revision 1  
10-PY07BIA050RG01-M523E88Y  
datasheet  
Boost Diode Characteristics  
figure 13.  
FWD  
figure 14.  
FWD  
Typical forward characteristics  
Transient thermal impedance as a function of pulse width  
IF = f(VF)  
Zth(j-s) = f(tp)  
1
80  
60  
40  
20  
0
10  
0
10  
-1  
10  
0,5  
0,2  
0,1  
-2  
10  
0,05  
0,02  
0,01  
0,005  
0
-3  
10  
-5  
-4  
10  
-3  
10  
-2  
10  
-1  
10  
0
1
2
0,0  
0,5  
1,0  
1,5  
2,0  
2,5  
3,0  
10  
10  
10  
10  
tp(s)  
VF(V)  
tp  
=
250  
μs  
D =  
tp / T  
1,803  
25 °C  
125 °C  
150 °C  
Rth(j-s) =  
Tj:  
K/W  
FWD thermal model values  
R (K/W)  
τ (s)  
5,16E-02  
1,29E-01  
6,80E-01  
4,86E-01  
3,20E-01  
1,36E-01  
5,27E+00  
5,85E-01  
8,65E-02  
2,55E-02  
5,42E-03  
7,50E-04  
Copyright Vincotech  
16  
19 Apr. 2023 / Revision 1  
10-PY07BIA050RG01-M523E88Y  
datasheet  
Boost Sw. Protection Diode Characteristics  
figure 15.  
Rectifier  
figure 16.  
Rectifier  
Typical forward characteristics  
Transient thermal impedance as a function of pulse width  
IF = f(VF)  
Zth(j-s) = f(tp)  
1
50  
40  
30  
20  
10  
0
10  
0
10  
-1  
10  
0,5  
0,2  
-2  
10  
0,1  
0,05  
0,02  
0,01  
0,005  
0
-3  
10  
-5  
-4  
10  
-3  
10  
-2  
10  
-1  
10  
0
1
2
0,00  
0,25  
0,50  
μs  
0,75  
1,00  
1,25  
1,50  
1,75  
10  
10  
10  
10  
VF(V)  
tp(s)  
tp  
=
250  
D =  
tp / T  
1,869  
25 °C  
125 °C  
150 °C  
Rth(j-s) =  
Tj:  
K/W  
Rectifier thermal model values  
R (K/W)  
τ (s)  
5,65E-02  
1,70E-01  
6,15E-01  
6,94E-01  
2,16E-01  
1,19E-01  
8,90E+00  
1,08E+00  
1,58E-01  
5,21E-02  
6,16E-03  
1,06E-03  
Copyright Vincotech  
17  
19 Apr. 2023 / Revision 1  
10-PY07BIA050RG01-M523E88Y  
datasheet  
ByPass Diode Characteristics  
figure 17.  
Rectifier  
figure 18.  
Rectifier  
Typical forward characteristics  
Transient thermal impedance as a function of pulse width  
IF = f(VF)  
Zth(j-s) = f(tp)  
1
80  
60  
40  
20  
0
10  
0
10  
-1  
10  
0,5  
0,2  
-2  
10  
0,1  
0,05  
0,02  
0,01  
0,005  
0
-3  
10  
-5  
-4  
10  
-3  
10  
-2  
10  
-1  
10  
0
1
2
0,00  
0,25  
0,50  
μs  
0,75  
1,00  
1,25  
1,50  
1,75  
2,00  
VF(V)  
10  
10  
10  
10  
tp(s)  
tp  
=
250  
D =  
tp / T  
1,5  
25 °C  
Tj:  
125 °C  
Rth(j-s) =  
K/W  
Rectifier thermal model values  
R (K/W)  
τ (s)  
9,44E-02  
3,47E-01  
7,44E-01  
2,04E-01  
1,11E-01  
2,48E+00  
3,51E-01  
7,63E-02  
1,21E-02  
1,25E-03  
Copyright Vincotech  
18  
19 Apr. 2023 / Revision 1  
10-PY07BIA050RG01-M523E88Y  
datasheet  
Thermistor Characteristics  
figure 19.  
Thermistor  
Typical NTC characteristic as function of temperature  
RT = f(T)  
25000  
20000  
15000  
10000  
5000  
0
20  
40  
60  
80  
100  
120  
140  
T(°C)  
Copyright Vincotech  
19  
19 Apr. 2023 / Revision 1  
10-PY07BIA050RG01-M523E88Y  
datasheet  
Inverter Switching Characteristics  
figure 20.  
IGBT  
figure 21.  
IGBT  
Typical switching energy losses as a function of collector current  
Typical switching energy losses as a function of IGBT turn on gate resistor  
E = f(IC)  
E = f(Rg)  
2,00  
1,75  
1,50  
1,25  
1,00  
0,75  
0,50  
0,25  
0,00  
1,50  
1,25  
1,00  
0,75  
0,50  
0,25  
0,00  
Eoff  
Eoff  
Eoff  
Eoff  
Eon  
Eon  
Eoff  
Eon  
Eoff  
Eon  
Eon  
Eon  
0
20  
40  
60  
80  
100  
IC(A)  
0
5
10  
15  
20  
25  
30  
35  
Rg(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
=
=
=
=
VCE  
VGE  
IC  
=
=
=
350  
-5/15  
8
V
V
Ω
Ω
125 °C  
150 °C  
350  
-5/15  
50  
V
V
A
125 °C  
150 °C  
Tj:  
Tj:  
Rgon  
Rgoff  
8
figure 22.  
FWD  
figure 23.  
FWD  
Typical reverse recovered energy loss as a function of collector current  
Typical reverse recovered energy loss as a function of IGBT turn on gate resistor  
Erec = f(IC)  
Erec = f(Rg)  
1,0  
0,8  
0,6  
0,4  
0,2  
0,0  
0,7  
0,6  
0,5  
0,4  
0,3  
0,2  
0,1  
0,0  
Erec  
Erec  
Erec  
Erec  
Erec  
Erec  
0
20  
40  
60  
80  
100  
IC(A)  
0
5
10  
15  
20  
25  
30  
35  
Rg(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
350  
-5/15  
8
V
V
Ω
125 °C  
150 °C  
350  
-5/15  
50  
V
125 °C  
150 °C  
Tj:  
Tj:  
V
A
Copyright Vincotech  
20  
19 Apr. 2023 / Revision 1  
10-PY07BIA050RG01-M523E88Y  
datasheet  
Inverter Switching Characteristics  
figure 24.  
IGBT  
figure 25.  
IGBT  
Typical switching times as a function of collector current  
Typical switching times as a function of IGBT turn on gate resistor  
t = f(IC)  
t = f(Rg)  
0
10  
0
10  
td(off)  
td(on)  
td(off)  
-1  
10  
-1  
10  
td(on)  
tf  
tr  
tf  
tr  
-2  
10  
-2  
10  
-3  
10  
-3  
10  
0
20  
40  
60  
80  
100  
IC(A)  
0
5
10  
15  
20  
25  
30  
35  
Rg(Ω)  
With an inductive load at  
With an inductive load at  
Tj =  
Tj =  
150  
350  
-5/15  
8
°C  
V
150  
350  
-5/15  
50  
°C  
VCE  
=
=
=
=
VCE  
=
=
=
V
V
A
VGE  
Rgon  
Rgoff  
VGE  
IC  
V
Ω
Ω
8
figure 26.  
FWD  
figure 27.  
FWD  
Typical reverse recovery time as a function of collector current  
Typical reverse recovery time as a function of IGBT turn on gate resistor  
trr = f(IC)  
trr = f(Rgon)  
0,12  
0,10  
0,08  
0,06  
0,04  
0,02  
0,00  
0,200  
0,175  
0,150  
0,125  
0,100  
0,075  
0,050  
0,025  
0,000  
trr  
trr  
trr  
trr  
trr  
trr  
0
20  
40  
60  
80  
100  
0
5
10  
15  
20  
25  
30  
35  
IC(A)  
Rgon(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
350  
-5/15  
8
V
V
Ω
125 °C  
150 °C  
350  
-5/15  
50  
V
V
A
125 °C  
150 °C  
Tj:  
Tj:  
Copyright Vincotech  
21  
19 Apr. 2023 / Revision 1  
10-PY07BIA050RG01-M523E88Y  
datasheet  
Inverter Switching Characteristics  
figure 28.  
FWD  
figure 29.  
FWD  
Typical recovered charge as a function of collector current  
Typical recovered charge as a function of IGBT turn on gate resistor  
Qr = f(IC)  
Qr = f(Rgon)  
4,0  
3,5  
3,0  
2,5  
2,0  
1,5  
1,0  
0,5  
0,0  
3,0  
2,5  
2,0  
1,5  
1,0  
0,5  
0,0  
Qr  
Qr  
Qr  
Qr  
Qr  
Qr  
0
20  
40  
60  
80  
100  
0
5
10  
15  
20  
25  
30  
35  
IC(A)  
Rgon(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
350  
-5/15  
8
V
V
Ω
125 °C  
150 °C  
350  
-5/15  
50  
V
125 °C  
150 °C  
Tj:  
Tj:  
V
A
figure 30.  
FWD  
figure 31.  
FWD  
Typical peak reverse recovery current as a function of collector current  
Typical peak reverse recovery current as a function of IGBT turn on gate resistor  
IRM = f(IC)  
IRM = f(Rgon)  
120  
100  
80  
60  
40  
20  
0
125  
100  
75  
50  
25  
0
IRM  
IRM  
IRM  
IRM  
IRM  
IRM  
0
20  
40  
60  
80  
100  
IC(A)  
0
5
10  
15  
20  
25  
30  
35  
R
gon(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
350  
-5/15  
8
V
V
Ω
125 °C  
150 °C  
350  
-5/15  
50  
V
V
A
125 °C  
150 °C  
Tj:  
Tj:  
Copyright Vincotech  
22  
19 Apr. 2023 / Revision 1  
10-PY07BIA050RG01-M523E88Y  
datasheet  
Inverter Switching Characteristics  
figure 32.  
FWD  
figure 33.  
FWD  
Typical rate of fall of forward and reverse recovery current as a function of collector current  
Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor  
diF/dt, dirr/dt = f(IC)  
diF/dt, dirr/dt = f(Rgon)  
8000  
12500  
10000  
7500  
5000  
2500  
0
diF/dt ‒ ‒ ‒ ‒ ‒  
diF/dt ‒ ‒ ‒ ‒ ‒  
dirr/dt ──────  
7000  
6000  
5000  
4000  
3000  
2000  
1000  
0
dirr/dt ──────  
0
20  
40  
60  
80  
100  
0
5
10  
15  
20  
25  
30  
35  
IC(A)  
Rgon(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
350  
-5/15  
8
V
V
Ω
125 °C  
150 °C  
350  
-5/15  
50  
V
V
A
125 °C  
150 °C  
Tj:  
Tj:  
figure 34.  
IGBT  
Reverse bias safe operating area  
IC = f(VCE  
)
120  
IC MAX  
100  
80  
60  
40  
20  
0
0
100  
200  
300  
400  
500  
600  
700  
800  
V
CE(V)  
Tj =  
At  
150  
8
°C  
Ω
Rgon  
Rgoff  
=
=
8
Ω
Copyright Vincotech  
23  
19 Apr. 2023 / Revision 1  
10-PY07BIA050RG01-M523E88Y  
datasheet  
Boost Switching Characteristics  
figure 35.  
IGBT  
figure 36.  
IGBT  
Typical switching energy losses as a function of collector current  
Typical switching energy losses as a function of IGBT turn on gate resistor  
E = f(IC)  
E = f(Rg)  
2,5  
2,0  
1,5  
1,0  
0,5  
0,0  
2,00  
1,75  
1,50  
1,25  
1,00  
0,75  
0,50  
0,25  
0,00  
Eoff  
Eoff  
Eoff  
Eoff  
Eoff  
Eon  
Eon  
Eoff  
Eon  
Eon  
Eon  
Eon  
0
20  
40  
60  
80  
100  
IC(A)  
0
5
10  
15  
20  
25  
30  
35  
Rg(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
=
=
=
=
VCE  
VGE  
IC  
=
=
=
400  
0/15  
8
V
V
Ω
Ω
125 °C  
150 °C  
400  
0/15  
50  
V
V
A
125 °C  
150 °C  
Tj:  
Tj:  
Rgon  
Rgoff  
8
figure 37.  
FWD  
figure 38.  
FWD  
Typical reverse recovered energy loss as a function of collector current  
Typical reverse recovered energy loss as a function of IGBT turn on gate resistor  
Erec = f(IC)  
Erec = f(Rg)  
1,0  
0,8  
0,6  
0,4  
0,2  
0,0  
0,9  
0,8  
0,7  
0,6  
0,5  
0,4  
0,3  
0,2  
0,1  
0,0  
Erec  
Erec  
Erec  
Erec  
Erec  
Erec  
0
20  
40  
60  
80  
100  
0
5
10  
15  
20  
25  
30  
35  
IC(A)  
Rg(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
400  
0/15  
8
V
V
Ω
125 °C  
150 °C  
400  
0/15  
50  
V
125 °C  
150 °C  
Tj:  
Tj:  
V
A
Copyright Vincotech  
24  
19 Apr. 2023 / Revision 1  
10-PY07BIA050RG01-M523E88Y  
datasheet  
Boost Switching Characteristics  
figure 39.  
IGBT  
figure 40.  
IGBT  
Typical switching times as a function of collector current  
Typical switching times as a function of IGBT turn on gate resistor  
t = f(IC)  
t = f(Rg)  
0
10  
0
10  
td(off)  
td(off)  
-1  
10  
-1  
10  
td(on)  
tf  
tr  
tf  
td(on)  
tr  
-2  
10  
-2  
10  
-3  
10  
-3  
10  
0
20  
40  
60  
80  
100  
IC(A)  
0
5
10  
15  
20  
25  
30  
35  
Rg(Ω)  
With an inductive load at  
With an inductive load at  
Tj =  
Tj =  
150  
400  
0/15  
8
°C  
V
150  
400  
0/15  
50  
°C  
VCE  
=
=
=
=
VCE  
=
=
=
V
V
A
VGE  
Rgon  
Rgoff  
VGE  
IC  
V
Ω
Ω
8
figure 41.  
FWD  
figure 42.  
FWD  
Typical reverse recovery time as a function of collector current  
Typical reverse recovery time as a function of IGBT turn on gate resistor  
trr = f(IC)  
trr = f(Rgon)  
0,12  
0,10  
0,08  
0,06  
0,04  
0,02  
0,00  
0,200  
0,175  
0,150  
0,125  
0,100  
0,075  
0,050  
0,025  
0,000  
trr  
trr  
trr  
trr  
trr  
trr  
0
20  
40  
60  
80  
100  
0
5
10  
15  
20  
25  
30  
35  
IC(A)  
Rgon(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
400  
0/15  
8
V
V
Ω
125 °C  
150 °C  
400  
0/15  
50  
V
V
A
125 °C  
150 °C  
Tj:  
Tj:  
Copyright Vincotech  
25  
19 Apr. 2023 / Revision 1  
10-PY07BIA050RG01-M523E88Y  
datasheet  
Boost Switching Characteristics  
figure 43.  
FWD  
figure 44.  
FWD  
Typical recovered charge as a function of collector current  
Typical recovered charge as a function of IGBT turn on gate resistor  
Qr = f(IC)  
Qr = f(Rgon)  
4,0  
3,5  
3,0  
2,5  
2,0  
1,5  
1,0  
0,5  
0,0  
3,0  
2,5  
2,0  
1,5  
1,0  
0,5  
0,0  
Qr  
Qr  
Qr  
Qr  
Qr  
Qr  
0
20  
40  
60  
80  
100  
0
5
10  
15  
20  
25  
30  
35  
IC(A)  
Rgon(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
400  
0/15  
8
V
V
Ω
125 °C  
150 °C  
400  
0/15  
50  
V
125 °C  
150 °C  
Tj:  
Tj:  
V
A
figure 45.  
FWD  
figure 46.  
FWD  
Typical peak reverse recovery current as a function of collector current  
Typical peak reverse recovery current as a function of IGBT turn on gate resistor  
IRM = f(IC)  
IRM = f(Rgon)  
100  
80  
60  
40  
20  
0
125  
100  
75  
50  
25  
0
IRM  
IRM  
IRM  
IRM  
IRM  
IRM  
0
20  
40  
60  
80  
100  
0
5
10  
15  
20  
25  
30  
35  
IC(A)  
Rgon(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
400  
0/15  
8
V
V
Ω
125 °C  
150 °C  
400  
0/15  
50  
V
V
A
125 °C  
150 °C  
Tj:  
Tj:  
Copyright Vincotech  
26  
19 Apr. 2023 / Revision 1  
10-PY07BIA050RG01-M523E88Y  
datasheet  
Boost Switching Characteristics  
figure 47.  
FWD  
figure 48.  
FWD  
Typical rate of fall of forward and reverse recovery current as a function of collector current  
Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor  
diF/dt, dirr/dt = f(IC)  
diF/dt, dirr/dt = f(Rgon)  
8000  
12500  
10000  
7500  
5000  
2500  
0
diF/dt ‒ ‒ ‒ ‒ ‒  
diF/dt ‒ ‒ ‒ ‒ ‒  
dirr/dt ──────  
7000  
6000  
5000  
4000  
3000  
2000  
1000  
0
dirr/dt ──────  
0
20  
40  
60  
80  
100  
0
5
10  
15  
20  
25  
30  
35  
IC(A)  
Rgon(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
400  
0/15  
8
V
V
Ω
125 °C  
150 °C  
400  
0/15  
50  
V
V
A
125 °C  
150 °C  
Tj:  
Tj:  
figure 49.  
IGBT  
Reverse bias safe operating area  
IC = f(VCE  
)
120  
IC MAX  
100  
80  
60  
40  
20  
0
0
100  
200  
300  
400  
500  
600  
700  
800  
V
CE(V)  
Tj =  
At  
150  
8
°C  
Ω
Rgon  
Rgoff  
=
=
8
Ω
Copyright Vincotech  
27  
19 Apr. 2023 / Revision 1  
10-PY07BIA050RG01-M523E88Y  
datasheet  
Switching Definitions  
figure 50.  
IGBT  
figure 51.  
IGBT  
Turn-off Switching Waveforms & definition of tdoff, tEoff (ttEoff = integrating time for Eoff  
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)  
tdoff  
IC  
IC  
VGE  
VGE  
VCE  
tEoff  
VCE  
tEon  
figure 52.  
IGBT  
figure 53.  
IGBT  
Turn-off Switching Waveforms & definition of tf  
Turn-on Switching Waveforms & definition of tr  
IC  
IC  
VCE  
tr  
VCE  
tf  
Copyright Vincotech  
28  
19 Apr. 2023 / Revision 1  
10-PY07BIA050RG01-M523E88Y  
datasheet  
Switching Definitions  
figure 54.  
FWD  
figure 55.  
FWD  
Turn-off Switching Waveforms & definition of trr  
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)  
Qr  
IF  
IF  
fitted  
VF  
Copyright Vincotech  
29  
19 Apr. 2023 / Revision 1  
10-PY07BIA050RG01-M523E88Y  
datasheet  
Ordering Code  
Version  
Ordering Code  
Without thermal paste  
10-PY07BIA050RG01-M523E88Y  
10-PY07BIA050RG01-M523E88Y-/7/  
10-PY07BIA050RG01-M523E88Y-/3/  
With thermal paste (5,2 W/mK, PTM6000HV)  
With thermal paste (3,4 W/mK, PSX-P7)  
Marking  
Name  
Date code  
UL & VIN  
Lot  
Serial  
Text  
NN-NNNNNNNNNNNNNN-  
TTTTTTVV  
WWYY  
UL VIN  
LLLLL  
SSSS  
Type&Ver  
Lot number  
Serial  
Date code  
Datamatrix  
TTTTTTTVV  
LLLLL  
SSSS  
WWYY  
Outline  
Pin table [mm]  
Pin  
1
X
Y
28,2  
28,2  
28,2  
28,2  
28,2  
28,2  
28,2  
28,2  
28,2  
28,2  
28,2  
28,2  
28,2  
28,2  
22,85  
20,35  
15,45  
12,95  
11,8  
11,8  
6,35  
6,35  
0
Function  
G25  
0
2
3
S25  
3
6
NC  
4
12,35  
15,35  
18,35  
22,35  
25,35  
28,35  
34,7  
39,8  
46,2  
49,2  
52,2  
37,25  
37,25  
9,85  
9,85  
36  
NC  
5
S27  
6
G27  
7
NC  
8
S11  
9
G11  
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
23  
24  
25  
26  
27  
28  
29  
30  
31  
32  
33  
34  
Therm1  
Therm2  
G13  
S13  
NC  
DC-  
DC-  
DC-Boost  
DC-Boost  
DC+  
38,5  
7,25  
9,75  
0
DC+  
DC+Boost  
DC+Boost  
ACIn1  
SOL1  
SOL2  
ACIn2  
Ph1  
5
0
10,5  
15,5  
22,5  
27,5  
30,5  
33,5  
41,2  
44,2  
47,2  
52,2  
0
0
0
0
G12  
0
S12  
0
Ph1  
0
Ph2  
0
S14  
0
G14  
0
Ph2  
Copyright Vincotech  
30  
19 Apr. 2023 / Revision 1  
10-PY07BIA050RG01-M523E88Y  
datasheet  
Pinout  
DC+  
19,20  
DC+Boost  
21,22  
D26  
D28  
Sol1  
24  
T12  
T14  
D11  
D13  
Sol2  
25  
G12  
28  
G14  
33  
D25  
D27  
S12  
29  
S14  
32  
ACIn1  
23  
Ph1  
27,30  
C10  
C20  
ACIn2  
26  
Ph2  
31,34  
T11  
T13  
T25  
T27  
D12  
D14  
D45  
G27 6  
D47  
G11  
9
G13 12  
G25  
NC  
1
3
NC  
NC  
4
5
NC  
7
8
14  
S25  
2
S27  
S11  
S13 13  
Rt  
Therm1  
10  
Therm2  
11  
DC-Boost  
17,18  
DC-  
15,16  
Identification  
Component  
Voltage  
Current  
Function  
Comment  
ID  
T11, T13, T12, T14  
D11, D13, D12, D14  
T25, T27  
IGBT  
FWD  
650 V  
650 V  
650 V  
650 V  
1600 V  
1600 V  
630 V  
50 A  
30 A  
50 A  
30 A  
18 A  
28 A  
Inverter Switch  
Inverter Diode  
Boost Switch  
IGBT  
D25, D27  
FWD  
Boost Diode  
D45, D47  
Rectifier  
Rectifier  
Capacitor  
Thermistor  
Boost Sw. Protection Diode  
ByPass Diode  
D26, D28  
C10, C20  
Capacitor (DC)  
Thermistor  
Rt  
Copyright Vincotech  
31  
19 Apr. 2023 / Revision 1  
10-PY07BIA050RG01-M523E88Y  
datasheet  
Packaging instruction  
Handling instruction  
Standard packaging quantity (SPQ) 100  
>SPQ  
Standard  
<SPQ  
Sample  
Handling instructions for flow 1 packages see vincotech.com website.  
Package data  
Package data for flow 1 packages see vincotech.com website.  
Vincotech thermistor reference  
See Vincotech thermistor reference table at vincotech.com website.  
UL recognition and file number  
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.  
Document No.:  
Date:  
Modification:  
Pages  
10-PY07BIA050RG01-M523E88Y-D1-14  
19 Apr. 2023  
DISCLAIMER  
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to  
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations  
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,  
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said  
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons  
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine  
the suitability of the information and the product for reader’s intended use.  
LIFE SUPPORT POLICY  
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval  
of Vincotech.  
As used herein:  
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or  
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be  
reasonably expected to result in significant injury to the user.  
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause  
the failure of the life support device or system, or to affect its safety or effectiveness.  
Copyright Vincotech  
32  
19 Apr. 2023 / Revision 1  

相关型号：

10-PY07BIA050SM-M523E38Y

 High efficiency in hard switching and resonant topologies;High speed switching;Low gate charge
VINCOTECH

10-PY07BVA030RW-LF42E28Y

 High efficiency in hard switching and resonant topologies;High speed switching;Low gate charge
VINCOTECH

10-PY07BVA030S5-LF42E08Y

 High speed and smooth switching;Low gate charge;Very low collector emitter saturation voltage
VINCOTECH

10-PY07BVA050S5-LF44E18Y

 High speed and smooth switching;Low gate charge;Very low collector emitter saturation voltage
VINCOTECH

10-PY07BVA075S5-LF45E18Y

 High speed and smooth switching;Low gate charge;Very low collector emitter saturation voltage
VINCOTECH

10-PY07FCA200RG-LQ45L60Y

 High efficiency in hard switching and resonant topologies;High speed switching;Low gate charge
VINCOTECH

10-PY07HVA050RG01-L984F48Y

 High efficiency in hard switching and resonant topologies;High speed switching;Low gate charge
VINCOTECH

10-PY07HVA050S5-L984F08Y

 High speed and smooth switching;Low gate charge;Very low collector emitter saturation voltage
VINCOTECH

10-PY07HVA050S501-L984F28Y

 High speed and smooth switching;Low gate charge;Very low collector emitter saturation voltage
VINCOTECH

10-PY07HVA075RG-L985F88Y

 High efficiency in hard switching and resonant topologies;High speed switching;Low gate charge
VINCOTECH

10-PY07HVA075RG01-L985F48Y

 High efficiency in hard switching and resonant topologies;High speed switching;Low gate charge
VINCOTECH

10-PY07HVA075S5-L985F08Y

 High speed and smooth switching;Low gate charge;Very low collector emitter saturation voltage
VINCOTECH
©2020 ICPDF网 联系我们和版权申明