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10-P107NIB150SG06-M136F39Y [VINCOTECH]

High speed switching;Low EMI;Low turn-off losses;Low collector emitter saturation voltage;
10-P107NIB150SG06-M136F39Y
型号： 10-P107NIB150SG06-M136F39Y
厂家： VINCOTECH    VINCOTECH
描述：

High speed switching;Low EMI;Low turn-off losses;Low collector emitter saturation voltage
文件： 总29页 (文件大小：1170K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
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10-F107NIB150SG06-M136F39  
10-P107NIB150SG06-M136F39Y  
datasheet  
flowNPC 1  
1200 V / 150 A  
Features  
flow 1 17 mm housing  
● switching with high speed components  
● low voltage ride through (LVRT)  
● reactive power capable  
● improved Rth (AlN) substrat  
Schematic  
Target applications  
● UPS  
● Motor drive  
● Solar inverters  
Types  
● 10-F107NIB150SG06-M136F39  
● 10-P107NIB150SG06-M136F39Y  
Maximum Ratings  
Tj  
= 25 °C, unless otherwise specified  
Parameter  
Symbol  
Condition  
Value  
Unit  
Buck Switch  
Collector-emitter voltage  
VCES  
IC  
650  
128  
450  
279  
±20  
5
V
A
Collector current  
Tj = Tjmax  
Ts = 80 °C  
Ts = 80 °C  
Tj ≤ 150 °C  
ICRM  
Ptot  
VGES  
tSC  
Repetitive peak collector current  
Total power dissipation  
Gate-emitter voltage  
tp limited by Tjmax  
Tj = Tjmax  
A
W
V
Short circuit ratings  
VGE = 15 V  
Vcc = 400 V  
µs  
°C  
Maximum junction temperature  
Tjmax  
175  
Copyright Vincotech  
1
24 Jan. 2019 / Revision 6  
10-F107NIB150SG06-M136F39  
10-P107NIB150SG06-M136F39Y  
datasheet  
Maximum Ratings  
Tj = 25 °C, unless otherwise specified  
Parameter  
Symbol  
Condition  
Value  
Unit  
Buck Diode  
Peak repetitive reverse voltage  
VRRM  
IF  
IFSM  
Ptot  
650  
125  
V
A
Continuous (direct) forward current  
Surge (non-repetitive) forward current  
Total power dissipation  
Tj = Tjmax  
Ts = 80 °C  
Tj = 100 °C  
Ts = 80 °C  
tp = 10 ms sine Wave  
Tj = Tjmax  
1280  
241  
A
W
°C  
Maximum junction temperature  
Tjmax  
175  
Boost Switch  
Collector-emitter voltage  
VCES  
IC  
600  
173  
450  
324  
±20  
6
V
A
Collector current  
Tj = Tjmax  
Ts = 80 °C  
Ts = 80 °C  
Tj = 150 °C  
ICRM  
Ptot  
VGES  
tSC  
Repetitive peak collector current  
Total power dissipation  
Gate-emitter voltage  
tp limited by Tjmax  
Tj = Tjmax  
A
W
V
Short circuit ratings  
VGE = 15 V  
Vcc = 360 V  
µs  
°C  
Maximum junction temperature  
Tjmax  
175  
Boost Diode  
Peak repetitive reverse voltage  
VRRM  
IF  
IFRM  
Ptot  
650  
120  
200  
203  
175  
V
A
Continuous (direct) forward current  
Repetitive peak forward current  
Total power dissipation  
Tj = Tjmax  
Ts = 80 °C  
Ts = 80 °C  
A
Tj = Tjmax  
W
°C  
Maximum junction temperature  
Tjmax  
Boost Sw.Inv.Diode  
Peak repetitive reverse voltage  
VRRM  
IF  
IFRM  
Ptot  
600  
124  
200  
204  
175  
V
A
Continuous (direct) forward current  
Repetitive peak forward current  
Total power dissipation  
Tj = Tjmax  
Ts = 80 °C  
Ts = 80 °C  
A
Tj = Tjmax  
W
°C  
Maximum junction temperature  
Tjmax  
Copyright Vincotech  
2
24 Jan. 2019 / Revision 6  
10-F107NIB150SG06-M136F39  
10-P107NIB150SG06-M136F39Y  
datasheet  
Maximum Ratings  
Tj = 25 °C, unless otherwise specified  
Parameter  
Symbol  
Condition  
Value  
Unit  
Module Properties  
Thermal Properties  
Tstg  
Tjop  
Storage temperature  
-40…+125  
°C  
°C  
Operation temperature under switching condition  
Isolation Properties  
-40…(Tjmax - 25)  
DC Test Voltage*  
AC Voltage  
tp = 2 s  
6000  
2500  
V
Isolation voltage  
Visol  
tp = 1 min  
V
Creepage distance  
min. 12,7  
min. 12,7  
> 200  
mm  
mm  
Clearance  
Comparative Tracking Index  
*100 % tested in production  
CTI  
Copyright Vincotech  
3
24 Jan. 2019 / Revision 6  
10-F107NIB150SG06-M136F39  
10-P107NIB150SG06-M136F39Y  
datasheet  
Characteristic Values  
Parameter  
Symbol  
Conditions  
Value  
Typ  
Unit  
VCE [V] IC [A]  
VGE [V]  
VGS [V]  
VDS [V] ID [A] Tj [°C]  
VF [V] IF [A]  
Min  
Max  
Buck Switch  
Static  
Gate-emitter threshold voltage  
Collector-emitter saturation voltage  
Collector-emitter cut-off current  
Gate-emitter leakage current  
Internal gate resistance  
Input capacitance  
VGE(th)  
VCEsat  
ICES  
IGES  
rg  
VGE = VCE  
0,0024  
150  
25  
4,2  
5,1  
5,6  
V
V
25  
1,38  
1,89  
2,25  
2,22  
15  
0
150  
650  
0
25  
25  
7,6  
µA  
nA  
Ω
20  
300  
none  
9240  
480  
Cies  
Coes  
Cres  
Qg  
f = 1 Mhz  
Output capacitance  
0
25  
25  
25  
pF  
Reverse transfer capacitance  
Gate charge  
274  
15  
480  
150  
940  
nC  
Thermal  
λpaste = 3,4 W/mK  
(PSX)  
Thermal resistance junction to sink  
Rth(j-s)  
0,34  
K/W  
Dynamic  
25  
149  
150  
151  
30  
td(on)  
125  
150  
25  
Turn-on delay time  
tr  
Rise time  
125  
150  
25  
125  
150  
25  
125  
150  
25  
125  
150  
25  
32  
33  
192  
188  
212  
12  
15  
17  
1,815  
2,442  
2,616  
2,084  
Rgon = 4 Ω  
Rgoff = 4 Ω  
ns  
td(off)  
Turn-off delay time  
Fall time  
±15  
350  
150  
tf  
Qr  
FWD  
Qr  
FWD  
Qr  
FWD  
= 4,8 μC  
= 9,1 μC  
= 10,3 μC  
Eon  
Turn-on energy (per pulse)  
mWs  
Eoff  
Turn-off energy (per pulse)  
125  
150  
2,747  
2,964  
Copyright Vincotech  
4
24 Jan. 2019 / Revision 6  
10-F107NIB150SG06-M136F39  
10-P107NIB150SG06-M136F39Y  
datasheet  
Characteristic Values  
Parameter  
Symbol  
Conditions  
Value  
Typ  
Unit  
VCE [V] IC [A]  
VGE [V]  
VGS [V]  
VDS [V] ID [A] Tj [°C]  
VF [V] IF [A]  
Min  
Max  
Buck Diode  
Static  
25  
1,52  
1,47  
1,45  
1,92  
8,4  
VF  
IR  
125  
150  
Forward voltage  
160  
V
Reverse leakage current  
650  
25  
µA  
Thermal  
λpaste = 3,4 W/mK  
(PSX)  
Thermal resistance junction to sink  
Rth(j-s)  
0,39  
K/W  
Dynamic  
25  
100  
143  
152  
IRRM  
125  
150  
25  
Peak recovery current  
A
66  
trr  
Qr  
Reverse recovery time  
125  
150  
25  
125  
150  
25  
125  
150  
25  
125  
150  
95  
105  
ns  
di/dt = 5294 A/μs  
di/dt = 5307 A/μs ±15  
di/dt = 4893 A/μs  
4,759  
9,056  
10,295  
1,035  
2,055  
2,344  
2725  
2076  
1787  
350  
150  
Recovered charge  
μC  
Erec  
Reverse recovered energy  
Peak rate of fall of recovery current  
mWs  
A/µs  
(dirf/dt)max  
Copyright Vincotech  
5
24 Jan. 2019 / Revision 6  
10-F107NIB150SG06-M136F39  
10-P107NIB150SG06-M136F39Y  
datasheet  
Characteristic Values  
Parameter  
Symbol  
Conditions  
Value  
Typ  
Unit  
VCE [V] IC [A]  
VGE [V]  
VGS [V]  
VDS [V] ID [A] Tj [°C]  
VF [V] IF [A]  
Min  
Max  
Boost Switch  
Static  
Gate-emitter threshold voltage  
Collector-emitter saturation voltage  
Collector-emitter cut-off current  
Gate-emitter leakage current  
Internal gate resistance  
Input capacitance  
VGE(th)  
VCEsat  
ICES  
IGES  
rg  
VGE = VCE  
0,0024  
150  
25  
5
5,8  
6,5  
V
V
25  
1,05  
1,46  
1,64  
1,85  
15  
0
150  
600  
0
25  
25  
7,6  
µA  
nA  
Ω
20  
1200  
none  
9240  
576  
Cies  
Coes  
Cres  
Qg  
f = 1 Mhz  
Output capacitance  
0
25  
25  
25  
pF  
Reverse transfer capacitance  
Gate charge  
274  
15  
480  
150  
940  
nC  
Thermal  
λpaste = 3,4 W/mK  
(PSX)  
Thermal resistance junction to sink  
Rth(j-s)  
0,29  
K/W  
Dynamic  
25  
150  
25  
150  
25  
150  
25  
150  
25  
150  
25  
149  
151  
31  
td(on)  
tr  
td(off)  
tf  
Turn-on delay time  
Rise time  
36  
Rgon = 4 Ω  
Rgoff = 4 Ω  
ns  
220  
245  
58  
78  
1,77  
2,38  
Turn-off delay time  
Fall time  
±15  
350  
150  
Qr  
Qr  
= 5,9 μC  
= 12,9 μC  
FWD  
Eon  
Eoff  
Turn-on energy (per pulse)  
Turn-off energy (per pulse)  
FWD  
mWs  
4,26  
5,95  
150  
Copyright Vincotech  
6
24 Jan. 2019 / Revision 6  
10-F107NIB150SG06-M136F39  
10-P107NIB150SG06-M136F39Y  
datasheet  
Characteristic Values  
Parameter  
Symbol  
Conditions  
Value  
Typ  
Unit  
VCE [V] IC [A]  
VGE [V]  
VGS [V]  
VDS [V] ID [A] Tj [°C]  
VF [V] IF [A]  
Min  
Max  
Boost Diode  
Static  
25  
100  
1,20  
1,77  
1,57  
1,9  
48  
VF  
IR  
Forward voltage  
Reverse leakage current  
Thermal  
V
150  
650  
25  
µA  
λpaste = 3,4 W/mK  
(PSX)  
Thermal resistance junction to sink  
Rth(j-s)  
0,47  
K/W  
Dynamic  
25  
150  
25  
150  
25  
150  
25  
150  
25  
150  
82  
114  
133  
IRRM  
Peak recovery current  
Reverse recovery time  
Recovered charge  
A
trr  
Qr  
ns  
290  
di/dt = 7150 A/μs  
di/dt = 5023 A/μs  
5,92  
12,85  
1,65  
3,68  
559  
±15  
350  
150  
μC  
Reverse recovered energy  
Peak rate of fall of recovery current  
Erec  
mWs  
A/µs  
(dirf/dt)max  
676  
Boost Sw.Inv.Diode  
Static  
25  
150  
1,2  
1,77  
1,54  
1,9  
VF  
Forward voltage  
100  
V
Thermal  
λpaste = 3,4 W/mK  
(PSX)  
Thermal resistance junction to sink  
Rth(j-s)  
0,46  
22  
K/W  
Thermistor  
Rated resistance  
R
ΔR/R  
P
25  
100  
25  
25  
25  
25  
kΩ  
%
Deviation of R100  
Power dissipation  
Power dissipation constant  
B-value  
R100 = 1484 Ω  
-5  
5
5
mW  
mW/K  
K
1,5  
B(25/50)  
Tol. ±1 %  
Tol. ±1 %  
3962  
4000  
B(25/100)  
B-value  
K
Vincotech NTC Reference  
I
Copyright Vincotech  
7
24 Jan. 2019 / Revision 6  
10-F107NIB150SG06-M136F39  
10-P107NIB150SG06-M136F39Y  
datasheet  
Buck Switch Characteristics  
figure 1.  
IGBT  
figure 2.  
IGBT  
Typical output characteristics  
Typical output characteristics  
= f(  
500  
)
VCE  
= f(  
I C  
500  
)
VCE  
I C  
VGE  
:
7
V
V
V
I
I
I
I
I
I
I
I
8
9
400  
300  
200  
100  
10  
11  
12  
13  
14  
15  
16  
17  
V
V
V
V
V
V
V
V
400  
300  
200  
100  
0
0
0
1
2
3
4
5
0
1
2
3
4
5
VC E (V)  
VC E (V)  
=
250  
15  
μs  
V
25 °C  
150 °C  
=
250  
125  
7 V to 17 V in steps of 1 V  
μs  
tp  
tp  
:
Tj  
=
=
°C  
VGE  
T j  
from  
VGE  
figure 3.  
IGBT  
figure 4.  
IGBT  
Typical transfer characteristics  
Transient thermal impedance as function of pulse duration  
= f(  
150  
)
VGE  
= f( )  
Z th(j-s) tp  
I C  
100  
I
I
I
I
120  
90  
Z
Z
Z
Z
10-1  
10-2  
10-3  
60  
0,5  
0,2  
0,1  
0,05  
0,02  
0,01  
0,005  
0
30  
0
10-5  
10-4  
10-3  
10-2  
10-1  
100  
101  
tp(s)  
102  
0
2
4
6
8
10  
VG E (V)  
=
100  
0
μs  
V
25 °C  
150 °C  
=
D
tp  
t
p / T  
0,34  
IGBT thermal model values  
(K/W)  
:
Tj  
=
=
R th(j-s)  
K/W  
VCE  
R
(s)  
τ
4,43E-02  
6,46E-02  
1,01E-01  
9,03E-02  
2,31E-02  
1,76E-02  
3,55E+00  
8,58E-01  
1,36E-01  
4,30E-02  
4,39E-03  
6,24E-04  
Copyright Vincotech  
8
24 Jan. 2019 / Revision 6  
10-F107NIB150SG06-M136F39  
10-P107NIB150SG06-M136F39Y  
datasheet  
Buck Switch Characteristics  
figure 5.  
IGBT  
Safe operating area  
I C = f(VCE  
)
1000  
1ms  
10µs  
100µs  
10ms  
100ms  
I
I
I
I
DC  
100  
10  
1
0,1  
0,01  
1
10  
100  
1000  
VC E (V)  
D =  
single pulse  
80 ºC  
Ts  
=
VGE  
=
±15  
V
Tj =  
Tjmax  
Copyright Vincotech  
9
24 Jan. 2019 / Revision 6  
10-F107NIB150SG06-M136F39  
10-P107NIB150SG06-M136F39Y  
datasheet  
Buck Diode Characteristics  
figure 1.  
FWD  
figure 2.  
FWD  
Typical forward characteristics  
Transient thermal impedance as a function of pulse width  
I F = f(VF)  
Z th(j-s) = f(tp)  
100  
500  
400  
300  
200  
100  
0
Z
Z
Z
Z
10-1  
0,5  
0,2  
0,1  
0,05  
0,02  
0,01  
0,005  
0
10-2  
10-5  
=
10-4  
10-3  
10-2  
10-1  
100  
101  
102  
tp (s)  
0
1
2
3
4
VF (V)  
tp  
=
250  
μs  
25 °C  
125 °C  
150 °C  
D =  
R th(j-s)  
tp / T  
Tj:  
0,39  
K/W  
FWD thermal model values  
R (K/W)  
τ (s)  
4,62E-02  
6,71E-02  
5,38E-02  
1,26E-01  
3,49E-02  
3,03E-02  
3,61E-02  
3,80E+00  
9,22E-01  
2,23E-01  
5,05E-02  
1,17E-02  
2,42E-03  
3,36E-04  
Copyright Vincotech  
10  
24 Jan. 2019 / Revision 6  
10-F107NIB150SG06-M136F39  
10-P107NIB150SG06-M136F39Y  
datasheet  
Boost Switch Characteristics  
figure 1.  
IGBT  
figure 2.  
IGBT  
Typical output characteristics  
Typical output characteristics  
= f(  
500  
)
VCE  
= f(  
I C  
500  
)
VCE  
I C  
VGE  
:
7
V
V
V
I
I
I
I
I
I
I
I
8
9
400  
300  
200  
100  
10  
11  
12  
13  
14  
15  
16  
17  
V
V
V
V
V
V
V
V
400  
300  
200  
100  
0
0
0
1
2
3
4
5
0
1
2
3
4
5
VC E (V)  
VC E (V)  
=
250  
15  
μs  
V
25 °C  
150 °C  
=
250  
125  
7 V to 17 V in steps of 1 V  
μs  
tp  
tp  
:
Tj  
=
=
°C  
VGE  
T j  
from  
VGE  
figure 3.  
IGBT  
figure 4.  
IGBT  
Typical transfer characteristics  
Transient thermal impedance as function of pulse duration  
= f(  
150  
)
VGE  
= f( )  
Z th(j-s) tp  
I C  
100  
I
I
I
I
120  
90  
Z
Z
Z
Z
10-1  
10-2  
10-3  
60  
0,5  
0,2  
0,1  
0,05  
0,02  
0,01  
0,005  
0
30  
0
10-5  
10-4  
10-3  
10-2  
10-1  
100  
101  
tp(s)  
102  
0
2
4
6
8
10  
VG E (V)  
=
100  
0
μs  
V
25 °C  
150 °C  
=
D
tp  
t
p / T  
0,29  
IGBT thermal model values  
(K/W)  
:
Tj  
=
=
R th(j-s)  
K/W  
VCE  
R
(s)  
τ
4,40E-02  
5,08E-02  
7,83E-02  
8,59E-02  
2,00E-02  
1,46E-02  
2,95E+00  
7,93E-01  
1,41E-01  
4,33E-02  
3,83E-03  
5,99E-04  
Copyright Vincotech  
11  
24 Jan. 2019 / Revision 6  
10-F107NIB150SG06-M136F39  
10-P107NIB150SG06-M136F39Y  
datasheet  
Boost Switch Characteristics  
figure 5.  
IGBT  
figure 6.  
IGBT  
Gate voltage vs gate charge  
Safe operating area  
= f(  
)
= f(  
)
VCE  
VGE  
Q G  
I C  
16  
1000  
1ms  
10µs  
10ms  
100µs  
100ms  
120 V  
480 V  
V
V
V
V
I I  
I I  
DC  
14  
12  
10  
8
100  
10  
1
6
4
0,1  
0,01  
2
0
0
200  
400  
A
600  
800  
1000  
1200  
1
10  
100  
1000  
QG (nC)  
VC E (V)  
=
single pulse  
D
=
150  
I C  
=
80  
ºC  
T s  
=
±15  
Tjmax  
V
VGE  
=
T j  
figure 7.  
IGBT  
figure 8.  
IGBT  
Short circuit duration as a function of  
Typical short circuit current as a function of  
VGE  
VGE  
tp  
= f(VGE  
)
I SC = f(VGE  
)
SC  
25  
20  
15  
10  
5
2500  
I
I
I
I
t
t
t
t
2000  
1500  
1000  
500  
0
0
12  
13  
14  
15  
16  
17  
18  
19  
20  
VGE (V)  
10  
11  
12  
13  
14  
15  
VGE (V)  
=
≤
VCE  
VCE  
400  
150  
V
ºC  
400  
150  
V
ºC  
≤
≤
T j  
T j  
Copyright Vincotech  
12  
24 Jan. 2019 / Revision 6  
10-F107NIB150SG06-M136F39  
10-P107NIB150SG06-M136F39Y  
datasheet  
Boost Diode Characteristics  
figure 1.  
FWD  
figure 2.  
FWD  
Typical forward characteristics  
Transient thermal impedance as a function of pulse width  
I F = f(VF)  
Z th(j-s) = f(tp)  
100  
300  
250  
200  
150  
100  
50  
Z
Z
Z
Z
10-1  
0,5  
0,2  
0,1  
0,05  
0,02  
0,01  
0,005  
0
10-2  
0
10-5  
=
10-4  
10-3  
10-2  
10-1  
100  
101  
102  
tp (s)  
0
1
2
3
4
VF (V)  
tp  
=
250  
μs  
25 °C  
150 °C  
D =  
R th(j-s)  
tp / T  
Tj:  
0,47  
K/W  
FWD thermal model values  
R (K/W)  
τ (s)  
4,73E-02  
6,76E-02  
1,01E-01  
1,41E-01  
6,28E-02  
4,92E-02  
4,12E+00  
9,18E-01  
1,37E-01  
3,83E-02  
8,98E-03  
1,99E-03  
Copyright Vincotech  
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24 Jan. 2019 / Revision 6  
10-F107NIB150SG06-M136F39  
10-P107NIB150SG06-M136F39Y  
datasheet  
Boost Sw.Inv.Diode Characteristics  
figure 1.  
FWD  
figure 2.  
FWD  
Typical forward characteristics  
Transient thermal impedance as a function of pulse width  
I F = f(VF)  
Z th(j-s) = f(tp)  
100  
300  
250  
200  
150  
100  
50  
Z
Z
Z
Z
10-1  
0,5  
0,2  
0,1  
0,05  
0,02  
0,01  
0,005  
0
10-2  
0
10-4  
=
10-3  
10-2  
10-1  
100  
101  
102  
tp (s)  
0
1
2
3
4
VF (V)  
tp  
=
250  
μs  
25 °C  
125 °C  
150 °C  
D =  
R th(j-s)  
tp / T  
0,46  
Tj:  
K/W  
FWD thermal model values  
R (K/W)  
τ (s)  
4,32E-02  
5,82E-02  
7,54E-02  
1,32E-01  
6,30E-02  
4,34E-02  
4,90E-02  
3,42E+00  
8,07E-01  
1,51E-01  
3,88E-02  
9,31E-03  
2,22E-03  
3,53E-04  
Thermistor Characteristics  
Typical Thermistor resistance values  
figure 1.  
Thermistor  
Typical NTC characteristic as a function of temperature  
as a function of temperature  
R = f(T)  
NTC-typical temperature characteristic  
25000  
20000  
15000  
10000  
5000  
0
25  
50  
75  
100  
125  
T (°C)  
Copyright Vincotech  
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24 Jan. 2019 / Revision 6  
10-F107NIB150SG06-M136F39  
10-P107NIB150SG06-M136F39Y  
datasheet  
Buck Switching Characteristics  
figure 1.  
IGBT  
figure 2.  
IGBT  
Typical switching energy losses as a function of collector current  
Typical switching energy losses as a function of gate resistor  
E = f(R g)  
E = f(I C)  
6
12  
Eon  
Eon  
Eon  
Eon  
Eoff  
Eon  
Eoff  
E
E
E
E
E
E
E
E
Eoff  
Eon  
4
2
0
8
4
0
Eoff  
Eoff  
Eoff  
0
50  
100  
150  
200  
25 °C  
250  
300  
IC (A)  
0
5
10  
15  
25 °C  
20  
Rg (Ω)  
With an inductive load at  
With an inductive load at  
VCE  
VGE  
=
=
=
=
350  
±15  
4
V
V
Ω
Ω
Tj:  
VCE  
VGE  
I C  
=
=
=
350  
±15  
150  
V
V
A
Tj:  
125 °C  
150 °C  
125 °C  
150 °C  
R gon  
R goff  
4
figure 3.  
FWD  
figure 4.  
FWD  
Typical reverse recovered energy loss as a function of collector current  
Typical reverse recovered energy loss as a function of gate resistor  
Erec = f(I c)  
Erec = f(R g)  
3,5  
3,5  
Erec  
Erec  
3
E
E
E
3
E
E
E
E
E
2,5  
2
2,5  
2
1,5  
1
1,5  
1
Erec  
Erec  
Erec  
0,5  
0
0,5  
0
Erec  
0
5
10  
15  
20  
0
50  
100  
150  
200  
250  
300  
IC (A)  
Rg (Ω)  
With an inductive load at  
25 °C  
With an inductive load at  
25 °C  
VCE  
VGE  
=
=
=
350  
±15  
4
V
V
Ω
Tj:  
VCE  
VGE  
I C  
=
=
=
350  
±15  
150  
V
V
A
Tj:  
125 °C  
150 °C  
125 °C  
150 °C  
R gon  
Copyright Vincotech  
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24 Jan. 2019 / Revision 6  
10-F107NIB150SG06-M136F39  
10-P107NIB150SG06-M136F39Y  
datasheet  
Buck Switching Characteristics  
figure 5.  
IGBT  
figure 6.  
IGBT  
Typical switching times as a function of collector current  
Typical switching times as a function of gate resistor  
t = f(I C  
)
t = f(R g)  
1
1
td(off)  
td(on)  
t
t
t
t
t
t
t
t
td(off)  
td(on)  
0,1  
0,1  
tr  
tr  
tf  
tf  
0,01  
0,01  
0,001  
0,001  
0
5
10  
15  
20  
0
50  
100  
150  
200  
250  
300  
IC (A)  
Rg (Ω)  
With an inductive load at  
With an inductive load at  
Tj =  
150  
350  
±15  
4
°C  
Tj =  
150  
350  
±15  
150  
°C  
V
VCE  
=
=
=
=
V
V
Ω
Ω
VCE  
=
=
=
VGE  
R gon  
R goff  
VGE  
I C  
V
A
4
figure 7.  
FWD  
figure 8.  
FWD  
Typical reverse recovery time as a function of collector current  
Typical reverse recovery time as a function of IGBT turn on gate resistor  
trr = f(I C  
)
trr = f(R gon)  
0,15  
0,25  
t
t
t
t
trr  
trr  
t
t
t
t
trr  
trr  
0,2  
0,15  
0,1  
0,05  
0
0,1  
0,05  
0
trr  
trr  
0
50  
100  
150  
200  
25 °C  
250  
300  
0
5
10  
15  
25 °C  
20  
Rgon (Ω)  
IC (A)  
With an inductive load at  
With an inductive load at  
350  
±15  
4
V
V
Ω
350  
±15  
150  
V
V
A
VCE  
=
=
=
Tj:  
VCE  
VGE  
I C  
=
=
=
Tj:  
125 °C  
150 °C  
125 °C  
150 °C  
VGE  
R gon  
Copyright Vincotech  
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24 Jan. 2019 / Revision 6  
10-F107NIB150SG06-M136F39  
10-P107NIB150SG06-M136F39Y  
datasheet  
Buck Switching Characteristics  
figure 9.  
FWD  
figure 10.  
FWD  
Typical recovered charge as a function of collector current  
Typical recovered charge as a function of IGBT turn on gate resistor  
Q r = f(I C  
)
Q r = f(R gon)  
16  
12  
Q
Q
Q
Q
Q
Q
Q
Q
Qr  
Qr  
Qr  
Qr  
12  
8
9
6
3
0
Qr  
Qr  
4
0
0
50  
100  
150  
200  
25 °C  
250  
300  
0
5
10  
15  
25 °C  
20  
Rgon (Ω)  
IC (A)  
With an inductive load at  
With an inductive load at  
VCE  
VGE  
=
=
=
350  
±15  
4
V
V
Ω
Tj:  
VCE  
=
350  
±15  
150  
V
V
A
Tj:  
125 °C  
150 °C  
125 °C  
150 °C  
VGE  
=
R gon  
I C=  
figure 11.  
FWD  
figure 12.  
FWD  
Typical peak reverse recovery current current as a function of collector current  
Typical peak reverse recovery current as a function of IGBT turn on gate resistor  
I RM = f(I C  
)
I RM = f(R gon)  
200  
200  
IRM  
I
I
I I  
I I  
I
I
IRM  
150  
100  
50  
150  
100  
50  
IRM  
IRM  
IRM  
IRM  
0
0
0
5
10  
15  
20  
Rgo n (Ω)  
0
50  
100  
150  
200  
25 °C  
250  
300  
IC (A)  
With an inductive load at  
With an inductive load at  
25 °C  
350  
±15  
4
V
V
Ω
350  
±15  
150  
V
V
A
VCE  
VGE  
=
=
=
Tj:  
VCE  
VGE  
I C  
=
=
=
Tj:  
125 °C  
150 °C  
125 °C  
150 °C  
R gon  
Copyright Vincotech  
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24 Jan. 2019 / Revision 6  
10-F107NIB150SG06-M136F39  
10-P107NIB150SG06-M136F39Y  
datasheet  
Buck Switching Characteristics  
figure 13.  
FWD  
figure 14.  
FWD  
Typical rate of fall of forward and reverse recovery current as a function of collector current  
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor  
di F/dt, di rr/dt = f(I C  
)
di F/dt, di rr/dt = f(R gon)  
12000  
8000  
diF/dt  
d
iF  
/
/
dt  
dt  
t
t
t
t
dir r/dt  
dir r  
t
t
t
t
i
i
i
i
10000  
8000  
6000  
4000  
2000  
0
i
i
i
i
6000  
4000  
2000  
0
0
5
10  
15  
25 °C  
20  
g on (Ω)  
0
50  
100  
150  
200  
25 °C  
250  
300  
R
IC (A)  
With an inductive load at  
With an inductive load at  
350  
±15  
4
V
V
Ω
350  
±15  
150  
V
V
A
VCE  
VGE  
=
=
=
Tj:  
VCE  
VGE  
=
=
Tj:  
125 °C  
150 °C  
125 °C  
150 °C  
R gon  
I C=  
figure 15.  
IGBT  
Reverse bias safe operating area  
I C = f(VCE  
)
350  
IC MAX  
I
I
I
I
300  
250  
200  
150  
100  
50  
I
I
I
I
I
I
I
I
V
V
V
V
0
0
100  
200  
300  
400  
500  
600  
700  
C E (V)  
V
At  
Tj  
=
=
=
125  
°C  
Ω
R gon  
R goff  
4
4
Ω
Copyright Vincotech  
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24 Jan. 2019 / Revision 6  
10-F107NIB150SG06-M136F39  
10-P107NIB150SG06-M136F39Y  
datasheet  
Buck Switching Definitions  
General conditions  
=
=
=
T j  
125 °C  
4 Ω  
4 Ω  
R gon  
R goff  
figure 1.  
IGBT  
figure 2.  
IGBT  
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff  
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)  
tdoff  
%
%
VGE 90%  
VCE 90%  
IC  
IC  
VGE  
VGE  
VCE  
tdon  
tEoff  
IC 1%  
VCE 3%  
VCE  
IC 10%  
VGE 10%  
tEon  
t (µs)  
t (µs)  
-15  
15  
V
-15  
V
VGE (0%) =  
VGE (0%) =  
VGE (100%) =  
VC (100%) =  
I C (100%) =  
V
VGE (100%) =  
VC (100%) =  
I C (100%) =  
15  
V
350  
150  
188  
V
350  
150  
150  
V
A
A
tdoff  
=
ns  
tdon  
=
ns  
figure 3.  
IGBT  
figure 4.  
IGBT  
Turn-off Switching Waveforms & definition of tf  
Turn-on Switching Waveforms & definition of tr  
fitted  
%
%
IC  
IC  
IC 90%  
IC 60%  
IC 40%  
VCE  
IC 90%  
tr  
IC10%  
VCE  
IC 10%  
tf  
t (µs)  
t (µs)  
VC (100%) =  
I C (100%) =  
tf =  
350  
150  
15  
V
VC (100%) =  
I C (100%) =  
350  
150  
32  
V
A
A
ns  
tr  
=
ns  
Copyright Vincotech  
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24 Jan. 2019 / Revision 6  
10-F107NIB150SG06-M136F39  
10-P107NIB150SG06-M136F39Y  
datasheet  
Buck Switching Characteristics  
figure 5.  
FWD  
figure 6.  
FWD  
Turn-off Switching Waveforms & definition of trr  
Turn-on Switching Waveforms & definition of tQr (tQr  
=
integrating time for Qr)  
%
%
Qr  
trr  
tQr  
IF  
IF  
fitted  
IRRM 10%  
VF  
IRRM 90%  
IRRM 100%  
t
(µs)  
t
(µs)  
VF (100%) =  
I F (100%) =  
350  
150  
143  
95  
V
I F (100%) =  
Q r (100%) =  
150  
0
A
A
μC  
I
RRM (100%) =  
A
trr  
=
ns  
Copyright Vincotech  
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24 Jan. 2019 / Revision 6  
10-F107NIB150SG06-M136F39  
10-P107NIB150SG06-M136F39Y  
datasheet  
Boost Switching Characteristics  
figure 1.  
IGBT  
figure 2.  
IGBT  
Typical switching energy losses as a function of collector current  
Typical switching energy losses as a function of gate resistor  
E = f(R g)  
E = f(I C)  
12  
12  
E
E
E
E
E
E
E
E
Eon  
Eon  
Eoff  
9
6
3
0
9
6
3
0
Eoff  
Eoff  
Eoff  
Eon  
Eon  
0
50  
100  
150  
200  
250  
300  
IC (A)  
0
5
10  
15  
20  
Rg (Ω)  
With an inductive load at  
25 °C  
150 °C  
With an inductive load at  
25 °C  
150 °C  
Tj:  
Tj:  
VCE  
VGE  
=
=
=
=
350  
±15  
4
V
V
Ω
Ω
VCE  
VGE  
I C  
=
=
=
350  
±15  
150  
V
V
A
R gon  
R goff  
4
figure 3.  
FWD  
figure 4.  
FWD  
Typical reverse recovered energy loss as a function of collector current  
Typical reverse recovered energy loss as a function of gate resistor  
Erec = f(I c)  
Erec = f(R g)  
5
5
Erec  
E
E
E
E
E
E
E
E
4
3
2
1
0
4
3
2
1
0
Erec  
Erec  
Erec  
0
5
10  
15  
20  
0
50  
100  
150  
200  
250  
300  
IC (A)  
Rg (Ω)  
With an inductive load at  
25 °C  
With an inductive load at  
25 °C  
Tj:  
Tj:  
VCE  
VGE  
=
=
=
350  
±15  
4
V
V
Ω
VCE  
VGE  
I C  
=
=
=
350  
±15  
150  
V
V
A
150 °C  
150 °C  
R gon  
Copyright Vincotech  
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24 Jan. 2019 / Revision 6  
10-F107NIB150SG06-M136F39  
10-P107NIB150SG06-M136F39Y  
datasheet  
Boost Switching Characteristics  
figure 5.  
IGBT  
figure 6.  
IGBT  
Typical switching times as a function of collector current  
Typical switching times as a function of gate resistor  
t = f(I C  
)
t = f(R g)  
1
1
td(off)  
td(on)  
t
t
t
t
t
t
t
t
td(off )  
td(on)  
0,1  
0,1  
tr  
tf  
tr  
tf  
0,01  
0,01  
0
5
10  
15  
20  
0
50  
100  
150  
200  
250  
300  
IC (A)  
R
g (Ω)  
With an inductive load at  
With an inductive load at  
Tj =  
150  
350  
±15  
4
°C  
Tj =  
150  
350  
±15  
150  
°C  
V
VCE  
=
=
=
=
V
V
Ω
Ω
VCE  
=
=
=
VGE  
R gon  
R goff  
VGE  
I C  
V
A
4
figure 7.  
FWD  
figure 8.  
FWD  
Typical reverse recovery time as a function of collector current  
Typical reverse recovery time as a function of IGBT turn on gate resistor  
trr = f(I C  
)
trr = f(R gon)  
0,35  
0,5  
trr  
trr  
t
t
t
t
t
t
t
t
0,3  
0,25  
0,2  
0,4  
0,3  
0,2  
0,1  
0
trr  
0,15  
0,1  
trr  
0,05  
0
0
50  
100  
150  
200  
250  
300  
0
5
10  
15  
20  
Rgon (Ω)  
IC (A)  
With an inductive load at  
25 °C  
150 °C  
With an inductive load at  
25 °C  
150 °C  
Tj:  
Tj:  
350  
±15  
4
V
V
Ω
350  
±15  
150  
V
V
A
VCE  
=
=
=
VCE  
VGE  
I C  
=
=
=
VGE  
R gon  
Copyright Vincotech  
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24 Jan. 2019 / Revision 6  
10-F107NIB150SG06-M136F39  
10-P107NIB150SG06-M136F39Y  
datasheet  
Boost Switching Characteristics  
figure 9.  
FWD  
figure 10.  
FWD  
Typical recovered charge as a function of collector current  
Typical recovered charge as a function of IGBT turn on gate resistor  
Q r = f(I C  
)
Q r = f(R gon)  
20  
16  
Q
Q
Q
Q
Q
Q
Q
Q
Qr  
Qr  
15  
10  
5
12  
8
Qr  
Qr  
4
0
0
0
50  
100  
150  
200  
250  
300  
0
5
10  
15  
20  
Rgon (Ω)  
IC (A)  
With an inductive load at  
25 °C  
150 °C  
With an inductive load at  
25 °C  
150 °C  
Tj:  
Tj:  
VCE  
VGE  
=
=
=
350  
±15  
4
V
V
Ω
VCE  
=
350  
±15  
150  
V
V
A
VGE  
=
R gon  
I C=  
figure 11.  
FWD  
figure 12.  
FWD  
Typical peak reverse recovery current current as a function of collector current  
Typical peak reverse recovery current as a function of IGBT turn on gate resistor  
I RM = f(I C  
)
I RM = f(R gon)  
160  
160  
I
I
IRM  
I I  
I I  
I
I
120  
80  
40  
0
120  
80  
40  
0
IRM  
IRM  
IRM  
0
5
10  
15  
20  
Rgo n (Ω)  
0
50  
100  
150  
200  
250  
300  
IC (A)  
With an inductive load at  
25 °C  
150 °C  
With an inductive load at  
25 °C  
150 °C  
Tj:  
Tj:  
350  
±15  
4
V
V
Ω
350  
±15  
150  
V
V
A
VCE  
VGE  
=
=
=
VCE  
VGE  
I C  
=
=
=
R gon  
Copyright Vincotech  
23  
24 Jan. 2019 / Revision 6  
10-F107NIB150SG06-M136F39  
10-P107NIB150SG06-M136F39Y  
datasheet  
Boost Switching Characteristics  
figure 13.  
FWD  
figure 14.  
FWD  
Typical rate of fall of forward and reverse recovery current as a function of collector current  
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor  
di F/dt, di rr/dt = f(I C  
)
di F/dt, di rr/dt = f(R gon)  
8000  
10000  
diF/dt  
d
iF  
/
/
dt  
dt  
t
t
t t  
t t  
t
t
dir r/dt  
dirr  
i
i
i i  
i i  
i
i
8000  
6000  
4000  
2000  
0
6000  
4000  
2000  
0
0
50  
100  
150  
200  
250  
300  
0
5
10  
15  
20  
g on (Ω)  
R
IC (A)  
With an inductive load at  
25 °C  
150 °C  
With an inductive load at  
25 °C  
150 °C  
Tj:  
Tj:  
350  
±15  
4
V
V
Ω
350  
±15  
150  
V
V
A
VCE  
VGE  
=
=
=
VCE =  
VGE =  
I C=  
R gon  
figure 15.  
IGBT  
Reverse bias safe operating area  
I C = f(VCE  
)
350  
IC MAX  
I
I
I
I
300  
250  
200  
150  
100  
50  
I
I
I
I
I
I
I
I
V
V
V
V
0
0
100  
200  
300  
400  
500  
600  
700  
C E (V)  
V
At  
Tj  
=
=
=
150  
°C  
Ω
R gon  
R goff  
4
4
Ω
Copyright Vincotech  
24  
24 Jan. 2019 / Revision 6  
10-F107NIB150SG06-M136F39  
10-P107NIB150SG06-M136F39Y  
datasheet  
Boost Switching Definitions  
General conditions  
=
=
=
T j  
150 °C  
4 Ω  
4 Ω  
R gon  
R goff  
figure 1.  
IGBT  
figure 2.  
IGBT  
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff  
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)  
%
tdoff  
%
VGE 90%  
VCE 90%  
IC  
IC  
VGE  
VGE  
VCE  
tdon  
tEoff  
IC 1%  
VCE 3%  
VCE  
IC 10%  
VGE 10%  
tEon  
t (µs)  
t (µs)  
-15  
15  
V
-15  
V
VGE (0%) =  
VGE (0%) =  
VGE (100%) =  
VC (100%) =  
I C (100%) =  
V
VGE (100%) =  
VC (100%) =  
I C (100%) =  
15  
V
350  
150  
245  
V
350  
150  
151  
V
A
A
tdoff  
=
ns  
tdon  
=
ns  
figure 3.  
IGBT  
figure 4.  
IGBT  
Turn-off Switching Waveforms & definition of tf  
Turn-on Switching Waveforms & definition of tr  
fitted  
%
%
IC  
IC  
IC 90%  
IC 60%  
VCE  
IC 90%  
IC 40%  
tr  
IC10%  
VCE  
IC 10%  
tf  
t (µs)  
t (µs)  
VC (100%) =  
I C (100%) =  
tf =  
350  
150  
78  
V
VC (100%) =  
I C (100%) =  
350  
150  
36  
V
A
A
ns  
tr  
=
ns  
Copyright Vincotech  
25  
24 Jan. 2019 / Revision 6  
10-F107NIB150SG06-M136F39  
10-P107NIB150SG06-M136F39Y  
datasheet  
Boost Switching Characteristics  
figure 5.  
FWD  
figure 6.  
FWD  
Turn-off Switching Waveforms & definition of trr  
Turn-on Switching Waveforms & definition of tQr (tQr  
=
integrating time for Qr)  
%
%
Qr  
trr  
tQr  
IF  
IF  
fitted  
IRRM 10%  
VF  
IRRM 90%  
IRRM 100%  
t
(µs)  
t
(µs)  
VF (100%) =  
I F (100%) =  
350  
150  
114  
290  
V
I F (100%) =  
Q r (100%) =  
150  
0
A
A
μC  
I
RRM (100%) =  
A
trr  
=
ns  
Copyright Vincotech  
26  
24 Jan. 2019 / Revision 6  
10-F107NIB150SG06-M136F39  
10-P107NIB150SG06-M136F39Y  
datasheet  
Ordering Code & Marking  
Version  
Ordering Code  
without thermal paste 17mm housing  
without thermal paste 17mm housing with press-fit pins  
10-F107NIB150SG06-M136F39  
10-P107NIB150SG06-M136F39Y  
Name  
Date code  
WWYY  
Serial  
UL & VIN  
UL VIN  
Lot  
Serial  
NN-NNNNNNNNNNNNNN  
TTTTTTVV WWYY UL  
VIN LLLLL SSSS  
Text  
NN-NNNNNNNNNNNNNN-TTTTTTVV  
LLLLL  
SSSS  
Type&Ver  
Lot number  
Date code  
WWYY  
Datamatrix  
TTTTTTTVV  
LLLLL  
SSSS  
Outline  
Pin table [mm]  
Pin  
1
X
Y
6,9  
0
Function  
NTC1  
NTC2  
E37  
52,2  
52,2  
36,2  
33,2  
33,2  
9,2  
2
3
6,75  
7,9  
4,9  
5,75  
6,9  
3,9  
0
4
G3  
5
G7  
6
E48  
7
6,2  
G4  
8
6,2  
G8  
9
2,7  
DC-  
DC-  
10  
0
0
11  
12  
2,7  
0
2,7  
2,7  
DC-  
DC-  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
23  
24  
25  
26  
27  
28  
29  
30  
31  
32  
33  
34  
35  
36  
37  
2,7  
0
5,4  
5,4  
DC-  
DC-  
GND  
GND  
GND  
GND  
DC+  
DC+  
DC+  
DC+  
DC+  
DC+  
E15  
2,7  
0
12,75  
12,75  
15,45  
15,45  
22,8  
22,8  
25,5  
25,5  
28,2  
28,2  
22,45  
21,3  
24,3  
22,15  
21  
2,7  
0
2,7  
0
2,7  
0
2,7  
0
18,3  
21,3  
21,3  
43  
G5  
G1  
E26  
46  
G6  
46  
24  
G2  
52,2  
49,5  
52,2  
49,5  
52,2  
49,5  
52,2  
20,1  
22,8  
22,8  
25,5  
25,5  
28,2  
28,2  
OUT  
OUT  
OUT  
OUT  
OUT  
OUT  
OUT  
Copyright Vincotech  
27  
24 Jan. 2019 / Revision 6  
10-F107NIB150SG06-M136F39  
10-P107NIB150SG06-M136F39Y  
datasheet  
Pinout  
Identification  
ID  
Component  
Voltage  
Current  
Function  
Comment  
T1, T4, T5, T8  
IGBT  
650 V  
75 A  
Buck Switch  
D9, D11, D13, D15,  
D10, D12, D14, D16  
FWD  
650 V  
40 A  
Buck Diode  
T2, T3, T6, T7  
D1, D4, D5, D8  
D2, D3, D6, D7  
NTC  
IGBT  
FWD  
600 V  
650 V  
600 V  
75 A  
50 A  
50 A  
Boost Switch  
Boost Diode  
Diode  
Boost Sw.Inv.Diode  
Thermistor  
Thermistor  
Copyright Vincotech  
28  
24 Jan. 2019 / Revision 6  
10-F107NIB150SG06-M136F39  
10-P107NIB150SG06-M136F39Y  
datasheet  
Packaging instruction  
Handling instruction  
Standard packaging quantity (SPQ) 100  
>SPQ  
Standard  
<SPQ  
Sample  
Handling instructions for flow 1 packages see vincotech.com website.  
Package data  
Package data for flow 1 packages see vincotech.com website.  
UL recognition and file number  
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.  
Document No.:  
Date:  
Modification:  
Pages  
10-F107NIB150SG06-M136F39-D6-14  
24 Jan. 2019  
All  
Upgrade of D9-16 diodes; DS update  
DISCLAIMER  
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to  
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations  
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,  
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said  
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons  
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine  
the suitability of the information and the product for reader’s intended use.  
LIFE SUPPORT POLICY  
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval  
of Vincotech.  
As used herein:  
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or  
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be  
reasonably expected to result in significant injury to the user.  
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause  
the failure of the life support device or system, or to affect its safety or effectiveness.  
Copyright Vincotech  
29  
24 Jan. 2019 / Revision 6  

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