10-FZ12NMA080SH04-M260F13 [VINCOTECH]
Easy paralleling;High speed switching;Low switching losses;
| 型号： | 10-FZ12NMA080SH04-M260F13 |
| 厂家： | 
VINCOTECH |
| 描述： | Easy paralleling;High speed switching;Low switching losses |
| 文件： | 总28页 (文件大小：1435K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
10-FZ12NMA080SH04-M260F13
10-PZ12NMA080SH04-M260F13Y
datasheet
flowMNPC 0
1200 V / 80 A
Features
flow 0 12mm housing
● Three-level MNPC (T-Type)
● Reactive power capability
● Low inductance layout
● Improved LVRT
Schematic
Target applications
● Industrial Drives
● Solar Inverters
● UPS
Types
● 10-FZ12NMA080SH04-M260F13
● 10-PZ12NMA080SH04-M260F13Y
Maximum Ratings
T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Buck Switch
VCES
IC
Collector-emitter voltage
1200
76
V
A
Collector current
Tj = Tjmax
Ts = 80 °C
ICRM
tp limited by Tjmax
Tj ≤ 175 °C, VCE ≤ 1200 V
Tj = Tjmax
Repetitive peak collector current
Turn off safe operating area
Total power dissipation
Gate-emitter voltage
240
320
186
±20
10
A
A
Ptot
VGES
tSC
Ts = 80 °C
W
V
Short circuit ratings
VGE = 15 V
Vcc = 800 V
Tj = 150 °C
µs
°C
Tjmax
Maximum junction temperature
175
Copyright Vincotech
1
12 Jun. 2018 / Revision 1
10-FZ12NMA080SH04-M260F13
10-PZ12NMA080SH04-M260F13Y
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Buck Diode
VRRM
IF
IFRM
Ptot
Peak repetitive reverse voltage
650
55
V
A
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
tp limited by Tjmax
Tj = Tjmax
150
71
A
W
°C
Tjmax
Maximum junction temperature
175
Boost Switch
Collector-emitter voltage
VCES
IC
650
58
V
A
Collector current
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Tj = 150 °C
ICRM
Ptot
VGES
tSC
tp limited by Tjmax
Tj = Tjmax
Repetitive peak collector current
Total power dissipation
Gate-emitter voltage
225
101
±20
6
A
W
V
Short circuit ratings
VGE = 15 V
Vcc = 360 V
µs
°C
Maximum junction temperature
Tjmax
175
Boost Diode
Peak repetitive reverse voltage
VRRM
IF
IFRM
Ptot
1200
53
V
A
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
tp limited by Tjmax
Tj = Tjmax
100
90
A
W
°C
Maximum junction temperature
Tjmax
175
Copyright Vincotech
2
12 Jun. 2018 / Revision 1
10-FZ12NMA080SH04-M260F13
10-PZ12NMA080SH04-M260F13Y
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching condition
Isolation Properties
-40…(Tjmax - 25)
DC Test Voltage*
tp = 2 s
6000
2500
V
Visol
Isolation voltage
AC Voltage
tp = 1 min
V
Creepage distance
Clearance
min. 12,7
9,15 / 8,95
> 200
mm
mm
Solder pin / Press-fit pin
Comparative Tracking Index
*100 % tested in production
CTI
Copyright Vincotech
3
12 Jun. 2018 / Revision 1
10-FZ12NMA080SH04-M260F13
10-PZ12NMA080SH04-M260F13Y
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Buck Switch
Static
VGE(th)
Gate-emitter threshold voltage
VGE = VCE
0,003
80
25
5,3
5,8
6,3
V
V
25
1,78
1,99
2,33
2,41
2,42
VCEsat
Collector-emitter saturation voltage
15
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
1200
0
25
25
10
µA
nA
Ω
20
240
none
4660
300
Cies
Coes
Cres
Qg
Output capacitance
f = 1 Mhz
0
25
25
25
pF
Reverse transfer capacitance
Gate charge
260
15
960
80
370
nC
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
0,51
K/W
Dynamic
25
125
25
125
25
125
25
125
25
125
25
125
77
79
11
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
14
Rgon = 4 Ω
Rgoff = 4 Ω
ns
180
242
48
Turn-off delay time
Fall time
±15
350
50
76
0,524
0,980
1,31
2,28
Qr
Qr
= 2,1 μC
= 3,8 μC
FWD
Eon
Eoff
Turn-on energy (per pulse)
Turn-off energy (per pulse)
FWD
mWs
Copyright Vincotech
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12 Jun. 2018 / Revision 1
10-FZ12NMA080SH04-M260F13
10-PZ12NMA080SH04-M260F13Y
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Buck Diode
Static
25
125
150
1,53
1,49
1,47
1,92
3,8
VF
IR
Forward voltage
75
V
Reverse leakage current
650
25
µA
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
1,34
K/W
Dynamic
25
125
25
125
25
125
25
125
25
125
63
73
52
Peak recovery current
Reverse recovery time
Recovered charge
IRRM
A
trr
Qr
ns
92
di/dt = 5245 A/μs
di/dt = 3680 A/μs
2,06
3,80
0,473
0,845
1198
852
±15
350
50
μC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
(dirf/dt)max
Copyright Vincotech
5
12 Jun. 2018 / Revision 1
10-FZ12NMA080SH04-M260F13
10-PZ12NMA080SH04-M260F13Y
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Boost Switch
Static
VGE(th)
Gate-emitter threshold voltage
VGE = VCE
0,0012 25
25
5,1
5,8
6,4
V
V
0,93
1,46
1,55
1,76
1,77
VCEsat
Collector-emitter saturation voltage
15
75
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
650
0
25
25
3,8
µA
nA
Ω
20
600
none
4620
288
Cies
Coes
Cres
Qg
Output capacitance
f = 1 Mhz
0
25
25
25
pF
Reverse transfer capacitance
Gate charge
137
15
480
75
470
nC
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
0,94
K/W
Dynamic
25
125
25
125
25
125
25
125
25
125
25
125
84
85
11
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
12
Rgon = 4 Ω
Rgoff = 4 Ω
ns
177
205
86
105
0,528
0,747
1,86
2,50
Turn-off delay time
Fall time
±15
350
56
Qr
Qr
= 5,3 μC
= 8,2 μC
FWD
Eon
Eoff
Turn-on energy (per pulse)
Turn-off energy (per pulse)
FWD
mWs
Copyright Vincotech
6
12 Jun. 2018 / Revision 1
10-FZ12NMA080SH04-M260F13
10-PZ12NMA080SH04-M260F13Y
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Boost Diode
Static
25
125
150
1,73
1,70
1,68
2,05
10
VF
IR
Forward voltage
50
V
Reverse leakage current
1200
25
µA
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
1,06
K/W
Dynamic
25
125
25
125
25
125
25
125
25
125
106
118
102
Peak recovery current
Reverse recovery time
Recovered charge
IRRM
A
trr
Qr
ns
148
di/dt = 6090 A/μs
di/dt = 5325 A/μs
5,32
8,22
1,55
2,42
6904
4951
±15
350
56
μC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
(dirf/dt)max
Thermistor
Rated resistance
R
ΔR/R
P
25
100
25
25
25
25
22
kΩ
%
Deviation of R100
Power dissipation
Power dissipation constant
B-value
R100 = 1486 Ω
-12
+14
200
2
mW
mW/K
K
B(25/50) Tol. ±3%
B(25/100) Tol. ±3%
3950
3998
B-value
K
Vincotech NTC Reference
B
Copyright Vincotech
7
12 Jun. 2018 / Revision 1
10-FZ12NMA080SH04-M260F13
10-PZ12NMA080SH04-M260F13Y
datasheet
Buck Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
I C = f(VCE
)
I C = f(VCE)
VGE
:
I
I
I
I
I
I
I
I
tp
=
250
15
μs
V
25 °C
125 °C
150 °C
tp
Tj
=
=
250
150
μs
°C
VGE
=
Tj:
VGE from
7 V to 17 V in steps of 1 V
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as function of pulse duration
I C = f(VGE
)
Z th(j-s) = f(tp)
100
I
I
I
I
Z
Z
Z
Z
10-1
10-2
10-3
10-5
10-4
10-3
10-2
10-1
100
101
tp(s)
102
tp
=
100
10
μs
V
25 °C
125 °C
150 °C
D =
R th(j-s)
tp / T
VCE
=
Tj:
=
0,51
K/W
IGBT thermal model values
(K/W)
R
τ
(s)
9,51E-02
1,84E-01
1,81E-01
3,37E-02
1,79E-02
1,03E+00
1,62E-01
6,24E-02
7,02E-03
6,34E-04
Copyright Vincotech
8
12 Jun. 2018 / Revision 1
10-FZ12NMA080SH04-M260F13
10-PZ12NMA080SH04-M260F13Y
datasheet
Buck Switch Characteristics
figure 5.
IGBT
figure 6.
IGBT
Gate voltage vs gate charge
Safe operating area
VGE = f(Q G)
I C = f(VCE)
16
1000
240 V
1ms
100µs
10µs
10ms
V
V
V
V
I I
I I
14
12
10
8
100ms
DC
100
10
1
960 V
6
4
0,1
2
0
0,01
0
50
100
150
200
250
300
350
400
QG (nC)
1
10
100
1000
10000
VC E (V)
D =
single pulse
80
I C =
80
A
Ts
=
ºC
V
VGE
=
±15
Tj =
Tjmax
figure 7.
IGBT
figure 8.
IGBT
Short circuit duration as a function of VGE
Typical short circuit current as a function of VGE
tpSC = f(VGE
)
I SC = f(VGE)
50
600
I
I
I
I
t
t
t
t
40
30
20
10
0
500
400
300
200
100
10
11
12
13
14
15
16
17
18
10
12
14
16
18
20
VG E (V)
VGE (V)
VCE
=
VCE
≤
600
150
V
ºC
600
25
V
ºC
Tj ≤
Tj ≤
Copyright Vincotech
9
12 Jun. 2018 / Revision 1
10-FZ12NMA080SH04-M260F13
10-PZ12NMA080SH04-M260F13Y
datasheet
Buck Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
I F = f(VF)
Z th(j-s) = f(tp)
101
250
200
150
100
50
Z
Z
Z
Z
100
0,5
10-1
0,2
0,1
0,05
0,02
0,01
0,005
0
10-2
0
10-4
=
10-3
10-2
10-1
100
101
102
tp (s)
0
1
2
3
4
VF (V)
tp
=
250
μs
25 °C
125 °C
150 °C
D =
R th(j-s)
tp / T
1,34
Tj:
K/W
FWD thermal model values
R (K/W)
τ
(s)
5,84E-02
1,57E-01
5,86E-01
3,27E-01
1,27E-01
8,12E-02
3,64E+00
5,25E-01
1,06E-01
2,57E-02
4,84E-03
4,11E-04
Copyright Vincotech
10
12 Jun. 2018 / Revision 1
10-FZ12NMA080SH04-M260F13
10-PZ12NMA080SH04-M260F13Y
datasheet
Boost Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
I C = f(VCE
)
I C = f(VCE)
VGE
:
I
I
I
I
I
I
I
I
tp
=
250
15
μs
V
25 °C
125 °C
150 °C
tp
Tj
=
=
250
150
μs
°C
VGE
=
Tj:
VGE from
7 V to 17 V in steps of 1 V
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as function of pulse duration
I C = f(VGE
)
Z th(j-s) = f(tp)
100
I
I
I
I
Z
Z
Z
Z
10-1
10-2
10-3
10-5
10-4
10-3
10-2
10-1
100
101
tp(s)
102
tp
=
100
10
μs
V
25 °C
125 °C
150 °C
D =
R th(j-s)
tp / T
VCE
=
Tj:
=
0,94
K/W
IGBT thermal model values
(K/W)
R
τ
(s)
8,02E-02
1,26E-01
3,43E-01
2,97E-01
6,50E-02
3,26E-02
4,50E+00
1,07E+00
1,53E-01
5,33E-02
7,48E-03
5,38E-04
Copyright Vincotech
11
12 Jun. 2018 / Revision 1
10-FZ12NMA080SH04-M260F13
10-PZ12NMA080SH04-M260F13Y
datasheet
Boost Switch Characteristics
figure 5.
IGBT
figure 6.
IGBT
Gate voltage vs gate charge
Safe operating area
VGE = f(Q G)
I C = f(VCE)
16
1000
120 V
1ms
100µs
10µs
V
V
V
V
I I
I I
10ms
100ms
DC
14
12
10
8
100
10
1
480 V
6
4
0,1
2
0
0,01
0
100
200
300
400
500
1
10
100
1000
QG (nC)
VC E (V)
D =
single pulse
80 ºC
IC=
75
A
Ts
=
VGE
=
±15
V
Tj =
Tjmax
ºC
figure 7.
IGBT
figure 8.
IGBT
Short circuit duration as a function of VGE
Typical short circuit current as a function of VGE
tp
= f(VGE
)
I SC = f(VGE)
SC
14
12
10
8
1400
I
I
I
I
t
t
t
t
1200
1000
800
600
400
200
0
6
4
2
0
12
14
16
18
20
10
11
12
13
14
15
VGE (V)
VG E (V)
VCE
=
VCE
≤
400
150
V
ºC
400
150
V
ºC
Tj ≤
Tj ≤
Copyright Vincotech
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12 Jun. 2018 / Revision 1
10-FZ12NMA080SH04-M260F13
10-PZ12NMA080SH04-M260F13Y
datasheet
Boost Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
I F = f(VF)
Z th(j-s) = f(tp)
100
150
120
90
60
30
0
Z
Z
Z
Z
10-1
0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
10-2
10-4
=
10-3
10-2
10-1
100
101
102
tp (s)
0
1
2
3
4
5
VF (V)
tp
=
250
μs
25 °C
125 °C
150 °C
D =
R th(j-s)
tp / T
1,06
Tj:
K/W
FWD thermal model values
R (K/W)
τ
(s)
4,19E-02
8,50E-02
4,99E-01
2,83E-01
9,28E-02
5,92E-02
4,68E+00
8,80E-01
1,21E-01
4,12E-02
6,53E-03
6,76E-04
Thermistor Characteristics
Typical Thermistor resistance values
figure 1.
Typical NTC characteristic
Thermistor
as a function of temperature
R = f(T)
NTC-typical temperature characteristic
25000
20000
15000
10000
5000
0
25
50
75
100
125
T (°C)
Copyright Vincotech
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12 Jun. 2018 / Revision 1
10-FZ12NMA080SH04-M260F13
10-PZ12NMA080SH04-M260F13Y
datasheet
Buck Switching Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(R g)
E = f(I C
)
E
E
E
E
E
E
E
E
With an inductive load at
25 °C
With an inductive load at
25 °C
Tj:
Tj:
350
±15
4
V
V
Ω
Ω
350
±15
50
V
V
A
VCE
VGE
=
=
=
=
VCE
VGE
I C
=
=
=
125 °C
125 °C
R gon
R goff
4
figure 3.
FWD
figure 4.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(I c)
Erec = f(R g)
E
E
E
E
E
E
E
E
With an inductive load at
25 °C
With an inductive load at
25 °C
Tj:
Tj:
350
±15
4
V
V
Ω
350
±15
50
V
V
A
VCE
VGE
=
=
=
VCE
VGE
I C
=
=
=
125 °C
125 °C
R gon
Copyright Vincotech
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12 Jun. 2018 / Revision 1
10-FZ12NMA080SH04-M260F13
10-PZ12NMA080SH04-M260F13Y
datasheet
Buck Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(I C)
t = f(R g)
1
1
t
t
t
t
t
t
t
t
td(off )
td(on)
td(off )
td(on)
tf
0,1
0,1
tf
tr
tr
0,01
0,01
0,001
0,001
0
4
8
12
16
20
0
20
40
60
80
100
IC (A)
Rg (Ω)
With an inductive load at
With an inductive load at
Tj =
0
350
±15
4
°C
V
Tj =
0
°C
V
VCE
=
=
=
=
VCE
=
=
=
350
±15
50
V
V
VGE
R gon
R goff
VGE
I C
Ω
Ω
A
4
figure 7.
FWD
figure 8.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
t rr = f(I C
)
trr = f(R gon)
0,12
0,16
trr
t
t
t
t
t
t
t
t
trr
0,09
0,06
0,03
0
0,12
0,08
0,04
0
trr
trr
0
20
40
60
80
100
0
4
8
12
16
20
Rg on (Ω)
IC (A)
With an inductive load at
25 °C
With an inductive load at
25 °C
Tj:
Tj:
350
±15
4
V
V
Ω
350
±15
50
V
V
A
VCE
=
=
=
VCE
VGE
I C
=
=
=
125 °C
125 °C
VGE
R gon
Copyright Vincotech
15
12 Jun. 2018 / Revision 1
10-FZ12NMA080SH04-M260F13
10-PZ12NMA080SH04-M260F13Y
datasheet
Buck Switching Characteristics
figure 9.
FWD
figure 10.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of IGBT turn on gate resistor
Q r = f(I C
)
Q r = f(R gon)
6
5
Qr
Q
Q
Q
Q
Q
Q
Q
Q
5
4
3
2
1
0
4
3
2
1
0
Qr
Qr
Qr
0
20
40
60
80
100
0
4
8
12
16
20
Rgon (Ω)
IC (A)
With an inductive load at
25 °C
With an inductive load at
25 °C
Tj:
Tj:
350
±15
4
V
V
Ω
350
±15
50
V
V
A
VCE
VGE
=
=
=
VCE=
VGE =
I C=
125 °C
125 °C
R gon
figure 11.
FWD
figure 12.
FWD
Typical peak reverse recovery current current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
I RM = f(I C
)
I RM = f(R gon)
100
100
I
I
I I
I I
I
I
IRM
80
60
40
20
0
80
60
40
20
0
IRM
IRM
IRM
0
4
8
12
16
20
Rgo n (Ω)
0
20
40
60
80
100
IC (A)
With an inductive load at
25 °C
With an inductive load at
25 °C
Tj:
Tj:
350
±15
4
V
V
Ω
350
±15
50
V
V
A
VCE
VGE
=
=
=
VCE
VGE
I C
=
=
=
125 °C
125 °C
R gon
Copyright Vincotech
16
12 Jun. 2018 / Revision 1
10-FZ12NMA080SH04-M260F13
10-PZ12NMA080SH04-M260F13Y
datasheet
Buck Switching Characteristics
figure 13.
FWD
figure 14.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor
di F/dt, di rr/dt = f(I C
)
di F/dt, di rr/dt = f(R gon)
diF/dt
d
iF
/
/
dt
dt
t
t
t t
t t
t
t
dirr/dt
dirr
i
i
i i
i i
i
i
With an inductive load at
25 °C
With an inductive load at
25 °C
125 °C
Tj:
Tj:
VCE
VGE
=
=
=
350
±15
4
V
V
Ω
VCE
VGE
I C
=
=
=
350
±15
50
V
V
A
125 °C
R gon
figure 15.
IGBT
Reverse bias safe operating area
I C = f(VCE
)
180
IC MAX
I
I
I
I
160
140
120
100
80
I
I
I
I
I
I
I
I
60
40
20
V
V
V
V
0
0
200
400
600
800
1000
1200
1400
VC E (V)
At
Tj =
125
°C
Ω
4
4
R gon
R goff
=
=
Ω
Copyright Vincotech
17
12 Jun. 2018 / Revision 1
10-FZ12NMA080SH04-M260F13
10-PZ12NMA080SH04-M260F13Y
datasheet
Buck Switching Definitions
General conditions
=
=
=
125 °C
4 Ω
4 Ω
T j
Rgon
R goff
figure 1.
IGBT
figure 2.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
%
%
VGE 90%
VCE 90%
IC
IC
VGE
VGE
VCE
tdon
tEoff
IC 1%
VCE 3%
VCE
IC 10%
VGE 10%
tEon
t
(µs)
t (µs)
VGE (0%) =
-15
15
V
VGE (0%) =
-15
V
VGE (100%) =
VC (100%) =
I C (100%) =
V
VGE (100%) =
VC (100%) =
I C (100%) =
15
V
350
50
V
350
50
V
A
A
242
ns
79
ns
t doff
=
tdon
=
figure 3.
IGBT
figure 4.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
fitted
%
%
IC
IC
IC 90%
IC 60%
IC 40%
VCE
IC 90%
tr
IC10%
VCE
IC 10%
tf
t
(µs)
t
(µs)
350
50
V
350
50
V
VC (100%) =
I C (100%) =
t f =
VC (100%) =
I C (100%) =
A
A
76
ns
tr
=
14
ns
Copyright Vincotech
18
12 Jun. 2018 / Revision 1
10-FZ12NMA080SH04-M260F13
10-PZ12NMA080SH04-M260F13Y
datasheet
Buck Switching Characteristics
figure 5.
FWD
figure 6.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
%
%
Qr
trr
tQr
IF
IF
fitted
IRRM 10%
VF
IRRM 90%
IRRM 100%
t
(µs)
t
(µs)
VF (100%) =
I F (100%) =
I RRM (100%) =
350
50
V
I F (100%) =
Q r (100%) =
50
A
A
3,80
μC
73
A
t rr
=
92
ns
Copyright Vincotech
19
12 Jun. 2018 / Revision 1
10-FZ12NMA080SH04-M260F13
10-PZ12NMA080SH04-M260F13Y
datasheet
Boost Switching Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(R g)
E = f(I C
)
4
4
E
E
E
E
E
E
E
E
Eoff
3
2
1
0
3
2
1
0
Eoff
Eoff
Eon
Eon
Eoff
Eon
Eon
0
40
80
120
IC (A)
0
4
8
12
16
20
Rg (Ω)
With an inductive load at
25 °C
125 °C
With an inductive load at
25 °C
Tj:
Tj:
VCE
VGE
=
=
=
=
350
±15
4
V
V
Ω
Ω
VCE
VGE
I C
=
=
=
350
±15
56
V
V
A
125 °C
R gon
R goff
4
figure 3.
FWD
figure 4.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(I c)
Erec = f(R g)
4
4
E
E
E
E
E
E
E
E
Erec
3
2
1
0
3
2
1
0
Erec
Erec
Erec
0
4
8
12
16
20
0
40
80
120
IC (A)
Rg (Ω)
With an inductive load at
25 °C
With an inductive load at
25 °C
Tj:
Tj:
350
±15
4
V
V
Ω
350
±15
56
V
V
A
VCE
VGE
=
=
=
VCE
VGE
I C
=
=
=
125 °C
125 °C
R gon
Copyright Vincotech
20
12 Jun. 2018 / Revision 1
10-FZ12NMA080SH04-M260F13
10-PZ12NMA080SH04-M260F13Y
datasheet
Boost Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(I C)
t = f(R g)
1
1
t
t
t
t
t
t
t
td(off )
td(on)
tf
t
td(off )
tf
0,1
0,1
td(on)
tr
tr
0,01
0,01
0,001
0,001
0
4
8
12
16
20
0
40
80
120
Rg (Ω)
IC (A)
With an inductive load at
With an inductive load at
Tj =
0
350
±15
4
°C
V
Tj =
0
°C
V
VCE
=
=
=
=
VCE
=
=
=
350
±15
56
V
V
VGE
R gon
R goff
VGE
I C
Ω
Ω
A
4
figure 7.
FWD
figure 8.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
t rr = f(I C
)
trr = f(R gon)
0,2
0,5
t
t
t
t
t
t
t
t
0,16
0,12
0,08
0,04
0
0,4
0,3
0,2
0,1
0
trr
trr
trr
trr
0
40
80
120
0
4
8
12
16
20
Rg on (Ω)
IC (A)
With an inductive load at
25 °C
125 °C
With an inductive load at
25 °C
Tj:
Tj:
350
±15
4
V
V
Ω
350
±15
56
V
V
A
VCE
=
=
=
VCE
VGE
I C
=
=
=
125 °C
VGE
R gon
Copyright Vincotech
21
12 Jun. 2018 / Revision 1
10-FZ12NMA080SH04-M260F13
10-PZ12NMA080SH04-M260F13Y
datasheet
Boost Switching Characteristics
figure 9.
FWD
figure 10.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of IGBT turn on gate resistor
Q r = f(I C
)
Q r = f(R gon)
12
12
Q
Q
Q
Qr
Q
Q
Q
Q
Q
Qr
9
6
3
0
9
6
3
0
Qr
Qr
0
40
80
120
0
4
8
12
16
20
Rgon (Ω)
IC (A)
With an inductive load at
25 °C
125 °C
With an inductive load at
25 °C
Tj:
Tj:
350
±15
4
V
V
Ω
350
±15
56
V
V
A
VCE
VGE
=
=
=
VCE=
VGE =
I C=
125 °C
R gon
figure 11.
FWD
figure 12.
FWD
Typical peak reverse recovery current current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
I RM = f(I C
)
I RM = f(R gon)
160
160
IRM
I
I
I I
I I
I
I
IRM
120
80
40
0
120
80
40
0
IRM
IRM
0
4
8
12
16
20
Rgo n (Ω)
0
40
80
120
IC (A)
With an inductive load at
25 °C
125 °C
With an inductive load at
25 °C
Tj:
Tj:
350
±15
4
V
V
Ω
350
±15
56
V
V
A
VCE
VGE
=
=
=
VCE
VGE
I C
=
=
=
125 °C
R gon
Copyright Vincotech
22
12 Jun. 2018 / Revision 1
10-FZ12NMA080SH04-M260F13
10-PZ12NMA080SH04-M260F13Y
datasheet
Boost Switching Characteristics
figure 13.
FWD
figure 14.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor
di F/dt, di rr/dt = f(I C
)
di F/dt, di rr/dt = f(R gon)
diF/dt
d
iF
/
/
dt
dt
t
t
t
t
dirr/dt
dirr
t
t
t
t
i
i
i
i
i
i
i
i
With an inductive load at
25 °C
With an inductive load at
25 °C
125 °C
Tj:
Tj:
VCE
VGE
=
=
=
350
±15
4
V
V
Ω
VCE
VGE
I C
=
=
=
350
±15
56
V
V
A
125 °C
R gon
figure 15.
IGBT
Reverse bias safe operating area
I C = f(VCE
)
160
IC MAX
I
I
I
I
140
120
100
80
I
I
I
I
I
I
I
I
60
40
20
V
V
V
V
0
0
100
200
300
400
500
600
700
VC E (V)
At
Tj =
125
°C
Ω
4
4
R gon
R goff
=
=
Ω
Copyright Vincotech
23
12 Jun. 2018 / Revision 1
10-FZ12NMA080SH04-M260F13
10-PZ12NMA080SH04-M260F13Y
datasheet
Boost Switching Definitions
General conditions
=
=
=
125 °C
4 Ω
4 Ω
T j
Rgon
R goff
figure 1.
IGBT
figure 2.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
%
%
VGE 90%
VCE 90%
IC
IC
VGE
VGE
VCE
tdon
tEoff
IC 1%
VCE 3%
VCE
IC 10%
VGE 10%
tEon
t
(µs)
t (µs)
VGE (0%) =
-15
15
V
VGE (0%) =
-15
V
VGE (100%) =
VC (100%) =
I C (100%) =
V
VGE (100%) =
VC (100%) =
I C (100%) =
15
V
350
56
V
350
56
V
A
A
205
ns
85
ns
t doff
=
tdon
=
figure 3.
IGBT
figure 4.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
fitted
%
%
IC
IC
IC 90%
IC 60%
IC 40%
VCE
IC 90%
tr
IC10%
VCE
IC 10%
tf
t
(µs)
t
(µs)
350
56
V
350
56
V
VC (100%) =
I C (100%) =
t f =
VC (100%) =
I C (100%) =
A
A
105
ns
tr
=
12
ns
Copyright Vincotech
24
12 Jun. 2018 / Revision 1
10-FZ12NMA080SH04-M260F13
10-PZ12NMA080SH04-M260F13Y
datasheet
Boost Switching Characteristics
figure 5.
FWD
figure 6.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
%
%
Qr
trr
tQr
IF
IF
fitted
IRRM 10%
VF
IRRM 90%
IRRM 100%
t
(µs)
t
(µs)
VF (100%) =
I F (100%) =
I RRM (100%) =
350
56
V
I F (100%) =
Q r (100%) =
56
A
A
8,22
μC
118
148
A
t rr
=
ns
Copyright Vincotech
25
12 Jun. 2018 / Revision 1
10-FZ12NMA080SH04-M260F13
10-PZ12NMA080SH04-M260F13Y
datasheet
Ordering Code & Marking
Version
without thermal paste 12mm housing with solder pins
without thermal paste 12mm housing with Press-fit pins
Ordering Code
10-FZ12NMA080SH04-M260F13
10-PZ12NMA080SH04-M260F13Y
Name
Date code
WWYY
UL & VIN
UL VIN
Lot
Serial
NN-NNNNNNNNNNNNNN
TTTTTTVV WWYY UL
VIN LLLLL SSSS
Text
NN-NNNNNNNNNNNNNN-TTTTTTVV
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
WWYY
Datamatrix
TTTTTTTVV
LLLLL
SSSS
Outline
Pin table
Pin
X
33,6
30,8
22
Y
0
Function
S2
1
2
0
G2
-DC
-DC
GND
S4
3
4
0
19,2
10,1
2,8
0
0
5
0
6
0
7
0
G4
8
0
7,1
9,9
12,7
Line
Line
Line
9
0
10
0
11
12
13
0
0
2,8
15,5
22,6
22,6
Line
G3
S3
14
15
16
17
18
19
20
21
22
10,1
19,2
22
22,6
22,6
22,6
22,6
22,6
14,8
8,2
GND
+DC
+DC
G1
30,8
33,6
33,6
33,6
S1
NTC1
NTC2
Not assembled
Not assembled
Copyright Vincotech
26
12 Jun. 2018 / Revision 1
10-FZ12NMA080SH04-M260F13
10-PZ12NMA080SH04-M260F13Y
datasheet
Pinout
Identification
ID
Component
Voltage
Current
Function
Comment
T1, T2
IGBT
1200 V
80 A
75 A
75 A
50 A
Buck Switch
D3, D4
T3, T4
D1, D2
NTC
FWD
IGBT
FWD
NTC
650 V
650 V
Buck Diode
Boost Switch
Boost Diode
Thermistor
1200 V
Copyright Vincotech
27
12 Jun. 2018 / Revision 1
10-FZ12NMA080SH04-M260F13
10-PZ12NMA080SH04-M260F13Y
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 135
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow 0 packages see vincotech.com website.
Package data
Package data for flow 0 packages see vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
10-xZ12NMA080SH04-M260F13x-D1-14
12 Jun. 2018
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
28
12 Jun. 2018 / Revision 1
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