10-FZ062TA050SM-P987D13 [VINCOTECH]
High efficiency in hard switching and resonant topologies;High speed switching;Low gate charge;
| 型号： | 10-FZ062TA050SM-P987D13 |
| 厂家： | 
VINCOTECH |
| 描述： | High efficiency in hard switching and resonant topologies;High speed switching;Low gate charge |
| 文件： | 总26页 (文件大小：7484K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
10-FZ062TA050SM-P987D13
datasheet
flowPFC 0 CD
650 V / 50 A
Topology features
flow 0 12 mm housing
● Dual Boost PFC
● Current sense interface in the collector with low inductive
bypass diode
● Integrated Shunt Resistor with protection Diode
● Integrated DC capacitor
● Temperature sensor
Component features
● High efficiency in hard switching and resonant topologies
● High speed switching
● Low gate charge
Housing features
● Base isolation: Al2O3
● Clip-in, reliable mechanical connection, qualified for wave
soldering
Schematic
● Convex shaped substrate for superior thermal contact
● Thermo-mechanical push-and-pull force relief
● Solder pin
Target applications
● Power Supply
● Welding & Cutting
Types
● 10-FZ062TA050SM-P987D13
Copyright Vincotech
1
11 Jul. 2022 / Revision 2
10-FZ062TA050SM-P987D13
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
PFC Switch
VCES
Collector-emitter voltage
650
43
V
A
IC
Collector current (DC current)
Repetitive peak collector current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
ICRM
tp limited by Tjmax
Tj = Tjmax
150
84
A
Ptot
W
V
VGES
Gate-emitter voltage
±20
175
Tjmax
Maximum junction temperature
°C
PFC Diode
VRRM
Peak repetitive reverse voltage
600
48
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Surge (non-repetitive) forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
IFRM
IFSM
Ptot
tp limited by Tjmax
60
A
Single Half Sine Wave,
tp = 10 ms
Tj = 25 °C
Ts = 80 °C
310
63
A
Tj = Tjmax
W
°C
Tjmax
Maximum junction temperature
175
PFC Sw. Protection Diode
VRRM
Peak repetitive reverse voltage
650
17
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
20
A
Ptot
33
W
°C
Tjmax
Maximum junction temperature
175
Copyright Vincotech
2
11 Jul. 2022 / Revision 2
10-FZ062TA050SM-P987D13
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Current Transformer Protection Diode
VRRM
Peak repetitive reverse voltage
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
650
17
V
A
IF
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
20
A
Ptot
33
W
°C
Tjmax
Maximum junction temperature
175
Shunt Protection Diode
VRRM
Peak repetitive reverse voltage
1600
45
V
A
IF
Forward current (DC current)
Surge (non-repetitive) forward current
Surge current capability
Tj = Tjmax
Ts = 80 °C
Tj = 150 °C
Ts = 80 °C
IFSM
I2t
280
390
59
A
Single Half Sine Wave,
tp = 10 ms
A2s
W
°C
Ptot
Total power dissipation
Tj = Tjmax
Tjmax
Maximum junction temperature
150
Rectifier Diode
VRRM
Peak repetitive reverse voltage
1600
45
V
A
IF
Forward current (DC current)
Surge (non-repetitive) forward current
Surge current capability
Tj = Tjmax
Ts = 80 °C
Tj = 150 °C
Ts = 80 °C
IFSM
I2t
280
390
59
A
Single Half Sine Wave,
tp = 10 ms
A2s
W
°C
Ptot
Total power dissipation
Tj = Tjmax
Tjmax
Maximum junction temperature
150
PFC Shunt
I
DC current
32
7
A
Ptot
Top
Power dissipation
Tc = 70 °C
W
°C
Operation Temperature
-55 ... 170
Copyright Vincotech
3
11 Jul. 2022 / Revision 2
10-FZ062TA050SM-P987D13
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Capacitor (DC)
VMAX
Maximum DC voltage
1000
V
Top
Operation Temperature
-55 ... 125
°C
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching
condition
-40…+(Tjmax - 25)
Isolation Properties
Isolation voltage
Isolation voltage
Creepage distance
Clearance
Visol
Visol
DC Test Voltage*
tp = 2 s
6000
2500
>12,7
8,99
V
AC Voltage
tp = 1 min
V
mm
mm
Comparative Tracking Index
*100 % tested in production
CTI
≥ 200
Copyright Vincotech
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11 Jul. 2022 / Revision 2
10-FZ062TA050SM-P987D13
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
PFC Switch
Static
VGE(th)
VCEsat
ICES
IGES
rg
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
VCE = VGE
0,0005
50
25
3,3
4
4,7
V
25
1,83
2,01
2,22(1)
15
0
V
125
650
0
25
25
40
µA
nA
Ω
20
120
None
3000
50
Cies
Coes
Cres
Qg
pF
pF
pF
nC
Output capacitance
f = 1 Mhz
0
25
25
25
Reverse transfer capacitance
Gate charge
11
15
520
50
120
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
1,13
K/W
25
18,86
18,39
18,5
td(on)
Turn-on delay time
Rise time
125
150
25
ns
ns
11,39
12,87
13,01
123,04
139,07
143,26
9
tr
125
150
25
Rgon = 8 Ω
Rgoff = 8 Ω
td(off)
Turn-off delay time
Fall time
125
150
25
ns
0/15
400
50
tf
125
150
25
7,04
ns
9,07
QrFWD=0,523 µC
QrFWD=1,6 µC
QrFWD=2 µC
0,72
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
125
150
25
1,04
mWs
mWs
1,13
0,332
0,48
Eoff
125
150
0,514
Copyright Vincotech
5
11 Jul. 2022 / Revision 2
10-FZ062TA050SM-P987D13
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
PFC Diode
Static
25
1,67
1,33
1,24
2,5(1)
VF
IR
Forward voltage
30
125
150
V
Reverse leakage current
Thermal
Vr = 600 V
25
20
µA
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
1,5
K/W
25
34,11
54,83
62,42
30,67
53,6
IRM
Peak recovery current
125
150
25
A
trr
Reverse recovery time
125
150
25
ns
58,79
0,523
1,6
di/dt=3557 A/µs
di/dt=2840 A/µs
di/dt=3262 A/µs
Qr
Recovered charge
0/15
400
50
125
150
25
μC
2
0,073
0,294
0,377
2927,79
2115,26
2340,37
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
25
mWs
A/µs
(dirf/dt)max
125
150
Copyright Vincotech
6
11 Jul. 2022 / Revision 2
10-FZ062TA050SM-P987D13
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
PFC Sw. Protection Diode
Static
25
1,23
1,67
1,56
1,87(1)
0,14
VF
IR
Forward voltage
10
V
125
Reverse leakage current
Thermal
Vr = 650 V
25
µA
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
2,87
K/W
Current Transformer Protection Diode
Static
25
1,23
1,67
1,56
1,87(1)
0,14
VF
IR
Forward voltage
10
V
125
Reverse leakage current
Thermal
Vr = 650 V
25
µA
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
2,87
K/W
Shunt Protection Diode
Static
25
1,32
1,33
1,3(1)
1,33(1)
20
VF
IR
Forward voltage
50
V
125
25
Reverse leakage current
Vr = 1600 V
µA
150
1500
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
1,2
K/W
Copyright Vincotech
7
11 Jul. 2022 / Revision 2
10-FZ062TA050SM-P987D13
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
Rectifier Diode
Static
25
1,32
1,33
1,3(1)
1,33(1)
20
VF
IR
Forward voltage
50
V
125
25
Reverse leakage current
Vr = 1600 V
µA
150
1500
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
1,2
K/W
PFC Shunt
Static
R
Resistance
6,8
mΩ
%
Tolerance
-1
1
Temperature coeficient
tc
100
ppm/K
Capacitor (DC)
Static
DC bias voltage =
0 V
C
Capacitance
25
25
100
2,5
nF
%
%
Tolerance
10
10
Dissipation factor
f = 1 kHz
Copyright Vincotech
8
11 Jul. 2022 / Revision 2
10-FZ062TA050SM-P987D13
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
Thermistor
Static
R
ΔR/R
P
Rated resistance
Deviation of R100
Power dissipation
Power dissipation constant
B-value
25
22
kΩ
%
R100 = 1484 Ω
100
25
-5
5
130
1,5
mW
mW/K
K
d
25
B(25/50)
Tol. ±1 %
Tol. ±1 %
3962
4000
B(25/100)
B-value
K
Vincotech Thermistor Reference
I
(1)
Value at chip level
(2)
Only valid with pre-applied Vincotech thermal interface material.
Copyright Vincotech
9
11 Jul. 2022 / Revision 2
10-FZ062TA050SM-P987D13
datasheet
PFC Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
150
150
VGE
:
8 V
9 V
125
100
75
50
25
0
125
100
75
50
25
0
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
18 V
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
V
CE(V)
VCE(V)
tp
=
tp
=
250
15
μs
V
250
125
μs
°C
25 °C
Tj:
VGE
=
Tj =
125 °C
VGE from 8 V to 18 V in steps of 1 V
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
1
50
10
0
40
30
20
10
10
-1
10
-2
10
0,5
0,2
0,1
-3
0,05
0,02
0,01
0,005
0
10
-4
0
0
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
1
2
3
4
5
6
7
10
10
tp(s)
V
GE(V)
tp
VCE
=
=
250
10
μs
D =
tp / T
1,126
25 °C
Tj:
V
125 °C
Rth(j-s) =
K/W
IGBT thermal model values
R (K/W)
τ (s)
7,12E-02
1,29E-01
4,31E-01
3,15E-01
1,31E-01
5,02E-02
8,15E+00
6,00E-01
9,13E-02
2,59E-02
5,80E-03
8,53E-04
Copyright Vincotech
10
11 Jul. 2022 / Revision 2
10-FZ062TA050SM-P987D13
datasheet
PFC Switch Characteristics
figure 5.
IGBT
figure 6.
IGBT
Safe operating area
Gate voltage vs gate charge
IC = f(VCE
)
VGE = f(Qg)
1000
17,5
15,0
12,5
10,0
7,5
100
10
1
5,0
0,1
0,01
2,5
0,0
1
10
100
1000
10000
0
25
50
75
100
125
150
V
CE(V)
Qg(μC)
D =
IC
=
single pulse
50
25
A
Ts =
Tj =
80
15
°C
V
°C
VGE
=
Tj =
Tjmax
Copyright Vincotech
11
11 Jul. 2022 / Revision 2
10-FZ062TA050SM-P987D13
datasheet
PFC Diode Characteristics
figure 7.
FWD
figure 8.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
80
60
40
20
0
10
0
10
-1
10
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
-3
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,0
0,5
1,0
1,5
2,0
2,5
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
1,505
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
1,05E-01
3,09E-01
6,31E-01
3,01E-01
1,59E-01
2,13E+00
2,20E-01
4,50E-02
6,71E-03
8,19E-04
Copyright Vincotech
12
11 Jul. 2022 / Revision 2
10-FZ062TA050SM-P987D13
datasheet
PFC Sw. Protection Diode Characteristics
figure 9.
FWD
figure 10.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
30
25
20
15
10
5
10
0
10
-1
10
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
-3
0
0,0
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,5
1,0
1,5
2,0
2,5
3,0
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
2,873
25 °C
Tj:
125 °C
Rth(j-s) =
K/W
FWD thermal model values
R (K/W)
τ (s)
6,53E-02
1,48E-01
1,31E+00
7,32E-01
4,04E-01
2,11E-01
3,94E+00
4,48E-01
5,96E-02
1,36E-02
2,79E-03
5,37E-04
Copyright Vincotech
13
11 Jul. 2022 / Revision 2
10-FZ062TA050SM-P987D13
datasheet
Current Transformer Protection Diode Characteristics
figure 11.
FWD
figure 12.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
30
25
20
15
10
5
10
0
10
-1
10
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
-3
0
0,0
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,5
1,0
1,5
2,0
2,5
3,0
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
2,873
25 °C
Tj:
125 °C
Rth(j-s) =
K/W
FWD thermal model values
R (K/W)
τ (s)
6,53E-02
1,48E-01
1,31E+00
7,32E-01
4,04E-01
2,11E-01
3,94E+00
4,48E-01
5,96E-02
1,36E-02
2,79E-03
5,37E-04
Copyright Vincotech
14
11 Jul. 2022 / Revision 2
10-FZ062TA050SM-P987D13
datasheet
Shunt Protection Diode Characteristics
figure 13.
Rectifier
figure 14.
Rectifier
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
125
100
75
50
25
0
10
0
10
-1
10
-2
10
0,5
0,2
0,1
-3
0,05
0,02
0,01
0,005
0
10
-4
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,0
0,5
1,0
1,5
2,0
2,5
10
10
10
10
VF(V)
tp(s)
tp
=
250
μs
D =
tp / T
1,195
25 °C
Tj:
125 °C
Rth(j-s) =
K/W
Rectifier thermal model values
R (K/W)
τ (s)
4,87E-02
1,57E-01
7,33E-01
1,69E-01
7,37E-02
1,39E-02
6,80E+00
6,29E-01
9,05E-02
3,10E-02
4,76E-03
1,53E-02
Copyright Vincotech
15
11 Jul. 2022 / Revision 2
10-FZ062TA050SM-P987D13
datasheet
Rectifier Diode Characteristics
figure 15.
Rectifier
figure 16.
Rectifier
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
125
100
75
50
25
0
10
0
10
-1
10
-2
10
0,5
0,2
0,1
-3
0,05
0,02
0,01
0,005
0
10
-4
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,0
0,5
1,0
1,5
2,0
2,5
10
10
10
10
VF(V)
tp(s)
tp
=
250
μs
D =
tp / T
1,195
25 °C
Tj:
125 °C
Rth(j-s) =
K/W
Rectifier thermal model values
R (K/W)
τ (s)
4,87E-02
1,57E-01
7,33E-01
1,69E-01
7,37E-02
1,39E-02
6,80E+00
6,29E-01
9,05E-02
3,10E-02
4,76E-03
1,53E-02
Copyright Vincotech
16
11 Jul. 2022 / Revision 2
10-FZ062TA050SM-P987D13
datasheet
Thermistor Characteristics
figure 17.
Thermistor
Typical NTC characteristic as function of temperature
RT = f(T)
25000
20000
15000
10000
5000
0
20
40
60
80
100
120
140
T(°C)
Copyright Vincotech
17
11 Jul. 2022 / Revision 2
10-FZ062TA050SM-P987D13
datasheet
PFC Switching Characteristics
figure 18.
IGBT
figure 19.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of IGBT turn on gate resistor
E = f(IC)
E = f(Rg)
2,25
2,00
1,75
1,50
1,25
1,00
0,75
0,50
0,25
0,00
2,00
1,75
1,50
1,25
1,00
0,75
0,50
0,25
0,00
Eon
Eon
Eon
Eon
Eon
Eon
Eoff
Eoff
Eoff
Eoff
Eoff
Eoff
0
20
40
60
80
100
IC(A)
0
5
10
15
20
25
30
35
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
400
0/15
8
V
V
Ω
Ω
125 °C
150 °C
400
0/15
50
V
V
A
125 °C
150 °C
Tj:
Tj:
Rgon
Rgoff
8
figure 20.
FWD
figure 21.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of IGBT turn on gate resistor
Erec = f(IC)
Erec = f(Rg)
0,6
0,5
0,4
0,3
0,2
0,1
0,0
0,6
0,5
0,4
0,3
0,2
0,1
0,0
Erec
Erec
Erec
Erec
Erec
Erec
0
20
40
60
80
100
0
5
10
15
20
25
30
35
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
400
0/15
8
V
V
Ω
125 °C
150 °C
400
0/15
50
V
125 °C
150 °C
Tj:
Tj:
V
A
Copyright Vincotech
18
11 Jul. 2022 / Revision 2
10-FZ062TA050SM-P987D13
datasheet
PFC Switching Characteristics
figure 22.
IGBT
figure 23.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of IGBT turn on gate resistor
t = f(IC)
t = f(Rg)
0
10
0
10
td(off)
td(off)
-1
10
-1
10
td(on)
tr
tr
td(on)
tf
tf
-2
10
-2
10
-3
10
-3
10
0
20
40
60
80
100
IC(A)
0
5
10
15
20
25
30
35
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
400
0/15
8
°C
V
150
400
0/15
50
°C
VCE
=
=
=
=
VCE
=
=
=
V
V
A
VGE
Rgon
Rgoff
VGE
IC
V
Ω
Ω
8
figure 24.
FWD
figure 25.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
trr = f(IC)
trr = f(Rgon)
0,09
0,08
0,07
0,06
0,05
0,04
0,03
0,02
0,01
0,00
0,12
0,10
0,08
0,06
0,04
0,02
0,00
trr
trr
trr
trr
trr
trr
0
20
40
60
80
100
0
5
10
15
20
25
30
35
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
400
0/15
8
V
V
Ω
125 °C
150 °C
400
0/15
50
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
19
11 Jul. 2022 / Revision 2
10-FZ062TA050SM-P987D13
datasheet
PFC Switching Characteristics
figure 26.
FWD
figure 27.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of IGBT turn on gate resistor
Qr = f(IC)
Qr = f(Rgon)
3,5
3,0
2,5
2,0
1,5
1,0
0,5
0,0
3,0
2,5
2,0
1,5
1,0
0,5
0,0
Qr
Qr
Qr
Qr
Qr
Qr
0
20
40
60
80
100
0
5
10
15
20
25
30
35
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
400
0/15
8
V
V
Ω
125 °C
150 °C
400
0/15
50
V
125 °C
150 °C
Tj:
Tj:
V
A
figure 28.
FWD
figure 29.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
IRM = f(IC)
IRM = f(Rgon)
80
70
60
50
40
30
20
10
0
125
100
75
50
25
0
IRM
IRM
IRM
IRM
IRM
IRM
0
20
40
60
80
100
0
5
10
15
20
25
30
35
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
400
0/15
8
V
V
Ω
125 °C
150 °C
400
0/15
50
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
20
11 Jul. 2022 / Revision 2
10-FZ062TA050SM-P987D13
datasheet
PFC Switching Characteristics
figure 30.
FWD
figure 31.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgon)
12000
7000
6000
5000
4000
3000
2000
1000
0
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
dirr/dt ──────
10000
8000
6000
4000
2000
0
0
20
40
60
80
100
IC(A)
0
5
10
15
20
25
30
35
R
gon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
400
0/15
8
V
V
Ω
125 °C
150 °C
400
0/15
50
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 32.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
120
IC MAX
100
80
60
40
20
0
0
100
200
300
400
500
600
700
800
V
CE(V)
Tj =
At
150
8
°C
Ω
Rgon
Rgoff
=
=
8
Ω
Copyright Vincotech
21
11 Jul. 2022 / Revision 2
10-FZ062TA050SM-P987D13
datasheet
PFC Switching Definitions
figure 33.
IGBT
figure 34.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (ttEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
figure 35.
IGBT
figure 36.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
Copyright Vincotech
22
11 Jul. 2022 / Revision 2
10-FZ062TA050SM-P987D13
datasheet
PFC Switching Definitions
figure 37.
FWD
figure 38.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
Qr
IF
IF
fitted
VF
Copyright Vincotech
23
11 Jul. 2022 / Revision 2
10-FZ062TA050SM-P987D13
datasheet
Ordering Code
Version
Ordering Code
Without thermal paste
10-FZ062TA050SM-P987D13
10-FZ062TA050SM-P987D13-/7/
10-FZ062TA050SM-P987D13-/3/
With thermal paste (5,2 W/mK, PTM6000HV)
With thermal paste (3,4 W/mK, PSX-P7)
Marking
Name
Date code
UL & VIN
Lot
Serial
Text
NN-NNNNNNNNNNNNNN-
TTTTTTVV
WWYY
UL VIN
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
Datamatrix
TTTTTTTVV
LLLLL
SSSS
WWYY
Outline
Pin table [mm]
Pin
1
X
Y
0
Function
Therm1
Therm2
S1sh1
S2sh1
DC-
33,5
33,5
29,5
29,5
26,7
23,9
2
2,8
2,8
0
3
4
5
0
6
0
DC-
7
not assembled
8
14,85
14,05
12,05
9,5
0
13,35
0
S25
ST1
G25
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
12,05
PFC1-
not assembled
6,7
3,9
12,05
0
PFC2-
S27
ST2
2,2
13,35
0
1,1
G27
0
22,7
22,7
20,2
22,7
22,7
22,7
22,7
22,7
18,55
16,05
8,7
PFC2
PFC+
PFC+
PFC1
G34
7,1
7,1
14,2
20,7
23,5
26
DC+
DC+
28,8
33,5
33,5
33,5
31
G32
ACIn1
ACIn1
ACIn2
ACIn2
8,7
Copyright Vincotech
24
11 Jul. 2022 / Revision 2
10-FZ062TA050SM-P987D13
datasheet
Pinout
PFC+
18,19
DC+
22,23
D32
D34
D25
D27
PFC1
20
PFC2
17
ACIn1
25,26
D26
T25
D28
C25
D45
C27
D47
ACIn2
27,28
ST1
9
ST2
15
T27
G25
10
G27
16
D31
D33
S25
8
S27
14
D48
PFC1-
11
PFC2-
13
SH1
G32
24
DC-
5,6
Rt
G34
21
S1sh1
3
S2sh1
4
Therm1
1
Therm2
2
Identification
Component
Voltage
Current
Function
Comment
ID
T25, T27
D25, D27
D45, D47
IGBT
FWD
FWD
650 V
600 V
650 V
50 A
30 A
10 A
PFC Switch
PFC Diode
PFC Sw. Protection Diode
Current Transformer Protection
Diode
D26, D28
FWD
650 V
10 A
D48
Rectifier
Rectifier
Shunt
1600 V
1600 V
50 A
50 A
Shunt Protection Diode
Rectifier Diode
PFC Shunt
D31, D32, D33, D34
SH1
C25, C27
Rt
Capacitor
Thermistor
1000 V
Capacitor (DC)
Thermistor
Copyright Vincotech
25
11 Jul. 2022 / Revision 2
10-FZ062TA050SM-P987D13
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 135
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow 0 packages see vincotech.com website.
Package data
Package data for flow 0 packages see vincotech.com website.
Vincotech thermistor reference
See Vincotech thermistor reference table at vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
10-FZ062TA050SM-P987D13-D2-14
11 Jul. 2022
PFC Diode change
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
26
11 Jul. 2022 / Revision 2
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