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10-FY07HVA050RG-L984F88 [VINCOTECH]

High efficiency in hard switching and resonant topologies;High speed switching;Low gate charge;
10-FY07HVA050RG-L984F88
型号： 10-FY07HVA050RG-L984F88
厂家： VINCOTECH    VINCOTECH
描述：

High efficiency in hard switching and resonant topologies;High speed switching;Low gate charge
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10-FY07HVA050RG-L984F88  
datasheet  
flowPACK 1 H6.5  
650 V / 50 A  
Features  
flow 1 12 mm housing  
● Innovative H6.5 topology  
● Fast IGBT  
● Optimized for wide range of load conditions  
● LVRT (Low voltage ride through) capability  
● Low inductance package  
● Integrated temperature sensor  
Schematic  
Target applications  
● Solar Inverters  
● Special Application  
Types  
● 10-FY07HVA050RG-L984F88  
Copyright Vincotech  
1
01 Jun. 2021 / Revision 4  
10-FY07HVA050RG-L984F88  
datasheet  
Maximum Ratings  
Tj = 25 °C, unless otherwise specified  
Parameter  
Symbol  
Conditions  
Value  
Unit  
Buck Switch  
VCES  
Collector-emitter voltage  
650  
46  
V
A
IC  
Collector current (DC current)  
Repetitive peak collector current  
Total power dissipation  
Tj = Tjmax  
Ts = 80 °C  
Ts = 80 °C  
ICRM  
tp limited by Tjmax  
Tj = Tjmax  
200  
77  
A
Ptot  
W
V
VGES  
Gate-emitter voltage  
±30  
175  
Tjmax  
Maximum junction temperature  
°C  
Buck Diode  
VRRM  
Peak repetitive reverse voltage  
650  
30  
V
A
IF  
Forward current (DC current)  
Repetitive peak forward current  
Total power dissipation  
Tj = Tjmax  
Ts = 80 °C  
Ts = 80 °C  
IFRM  
tp limited by Tjmax  
Tj = Tjmax  
120  
53  
A
Ptot  
W
°C  
Tjmax  
Maximum junction temperature  
175  
Boost Switch  
VCES  
Collector-emitter voltage  
650  
46  
V
A
IC  
Collector current (DC current)  
Repetitive peak collector current  
Total power dissipation  
Tj = Tjmax  
Ts = 80 °C  
Ts = 80 °C  
ICRM  
tp limited by Tjmax  
Tj = Tjmax  
200  
77  
A
Ptot  
W
V
VGES  
Gate-emitter voltage  
±30  
175  
Tjmax  
Maximum junction temperature  
°C  
Copyright Vincotech  
2
01 Jun. 2021 / Revision 4  
10-FY07HVA050RG-L984F88  
datasheet  
Maximum Ratings  
Tj = 25 °C, unless otherwise specified  
Parameter  
Symbol  
Conditions  
Value  
Unit  
Boost Diode  
VRRM  
Peak repetitive reverse voltage  
650  
30  
V
A
IF  
Forward current (DC current)  
Repetitive peak forward current  
Total power dissipation  
Tj = Tjmax  
Ts = 80 °C  
Ts = 80 °C  
IFRM  
tp limited by Tjmax  
Tj = Tjmax  
120  
53  
A
Ptot  
W
°C  
Tjmax  
Maximum junction temperature  
175  
Module Properties  
Thermal Properties  
Tstg  
Tjop  
Storage temperature  
-40…+125  
°C  
°C  
Operation temperature under switching  
condition  
-40…+(Tjmax - 25)  
Isolation Properties  
Isolation voltage  
Isolation voltage  
Creepage distance  
Clearance  
Visol  
Visol  
DC Test Voltage*  
AC Voltage  
tp = 2 s  
6000  
2500  
>12,7  
7,85  
V
tp = 1 min  
V
mm  
mm  
Comparative Tracking Index  
*100 % tested in production  
CTI  
≥ 200  
Copyright Vincotech  
3
01 Jun. 2021 / Revision 4  
10-FY07HVA050RG-L984F88  
datasheet  
Characteristic Values  
Symbol  
Parameter  
Conditions  
Values  
Typ  
Unit  
VCE [V] IC [A]  
VDS [V] ID [A] Tj [°C]  
VGE [V]  
VGS [V]  
Min  
Max  
VF [V]  
IF [A]  
Buck Switch  
Static  
VGE(th)  
Gate-emitter threshold voltage  
5
0,033  
50  
25  
5
6
7
V
V
25  
1,5  
1,66  
1,7  
1,9(1)  
VCEsat  
Collector-emitter saturation voltage  
15  
125  
150  
ICES  
IGES  
rg  
Collector-emitter cut-off current  
Gate-emitter leakage current  
Internal gate resistance  
Input capacitance  
0
650  
0
25  
25  
0,01  
0,2  
mA  
µA  
Ω
30  
None  
4200  
104  
79  
Cies  
Coes  
Cres  
Qg  
pF  
pF  
pF  
nC  
Output capacitance  
f = 1 Mhz  
0
30  
25  
25  
Reverse transfer capacitance  
Gate charge  
15  
400  
50  
141  
Thermal  
λpaste = 3,4 W/mK  
(PSX)  
(2)  
Rth(j-s)  
Thermal resistance junction to sink  
Dynamic  
1,23  
K/W  
25  
40  
39  
td(on)  
Turn-on delay time  
Rise time  
125  
150  
25  
ns  
ns  
38  
9
tr  
125  
150  
25  
10  
11  
Rgon = 8 Ω  
Rgoff = 8 Ω  
111  
td(off)  
Turn-off delay time  
Fall time  
125  
150  
25  
123  
ns  
127  
-5/15  
350  
40  
29,84  
62,35  
72,9  
0,364  
0,504  
0,557  
0,542  
0,684  
0,804  
tf  
125  
150  
25  
ns  
QrFWD=1,44 µC  
QrFWD=2,28 µC  
QrFWD=2,54 µC  
Eon  
Turn-on energy (per pulse)  
Turn-off energy (per pulse)  
125  
150  
25  
mWs  
mWs  
Eoff  
125  
150  
Copyright Vincotech  
4
01 Jun. 2021 / Revision 4  
10-FY07HVA050RG-L984F88  
datasheet  
Characteristic Values  
Symbol  
Parameter  
Conditions  
Values  
Typ  
Unit  
VCE [V] IC [A]  
VDS [V] ID [A] Tj [°C]  
VGE [V]  
VGS [V]  
Min  
Max  
VF [V]  
IF [A]  
Buck Diode  
Static  
25  
1,58  
1,75  
1,69  
1,9(1)  
VF  
IR  
Forward voltage  
30  
125  
150  
V
Reverse leakage current  
Thermal  
Vr = 650 V  
25  
10  
µA  
λpaste = 3,4 W/mK  
(PSX)  
(2)  
Rth(j-s)  
Thermal resistance junction to sink  
Dynamic  
1,8  
K/W  
25  
69,62  
81,9  
IRRM  
Peak recovery current  
125  
150  
25  
A
84,52  
27,54  
53,77  
57,04  
1,44  
trr  
Reverse recovery time  
125  
150  
25  
ns  
di/dt=5655 A/µs  
di/dt=5116 A/µs  
Qr  
Recovered charge  
-5/15  
350  
40  
125  
150  
25  
2,28  
μC  
2,54  
0,452  
0,683  
0,753  
7107  
7107  
6871  
Erec  
Reverse recovered energy  
Peak rate of fall of recovery current  
125  
150  
25  
mWs  
A/µs  
(dirf/dt)max  
125  
150  
Copyright Vincotech  
5
01 Jun. 2021 / Revision 4  
10-FY07HVA050RG-L984F88  
datasheet  
Characteristic Values  
Symbol  
Parameter  
Conditions  
Values  
Typ  
Unit  
VCE [V] IC [A]  
VDS [V] ID [A] Tj [°C]  
VGE [V]  
VGS [V]  
Min  
Max  
VF [V]  
IF [A]  
Boost Switch  
Static  
VGE(th)  
Gate-emitter threshold voltage  
5
0,033  
50  
25  
5
6
7
V
V
25  
1,5  
1,66  
1,7  
1,9(1)  
VCEsat  
Collector-emitter saturation voltage  
15  
125  
150  
ICES  
IGES  
rg  
Collector-emitter cut-off current  
Gate-emitter leakage current  
Internal gate resistance  
Input capacitance  
0
650  
0
25  
25  
0,01  
0,2  
mA  
µA  
Ω
30  
None  
4200  
104  
79  
Cies  
Coes  
Cres  
Qg  
pF  
pF  
pF  
nC  
Output capacitance  
f = 1 Mhz  
0
30  
25  
25  
Reverse transfer capacitance  
Gate charge  
15  
400  
50  
141  
Thermal  
λpaste = 3,4 W/mK  
(PSX)  
(2)  
Rth(j-s)  
Thermal resistance junction to sink  
Dynamic  
1,23  
K/W  
25  
48  
48  
td(on)  
Turn-on delay time  
Rise time  
125  
150  
25  
ns  
ns  
39  
10  
tr  
125  
150  
25  
10  
10  
Rgon = 8 Ω  
Rgoff = 8 Ω  
112  
td(off)  
Turn-off delay time  
Fall time  
125  
150  
25  
126  
ns  
129  
-5/15  
350  
40  
23,69  
43,85  
69,76  
0,382  
0,486  
0,582  
0,483  
0,678  
0,749  
tf  
125  
150  
25  
ns  
QrFWD=1,24 µC  
QrFWD=1,87 µC  
QrFWD=2,66 µC  
Eon  
Turn-on energy (per pulse)  
Turn-off energy (per pulse)  
125  
150  
25  
mWs  
mWs  
Eoff  
125  
150  
Copyright Vincotech  
6
01 Jun. 2021 / Revision 4  
10-FY07HVA050RG-L984F88  
datasheet  
Characteristic Values  
Symbol  
Parameter  
Conditions  
Values  
Typ  
Unit  
VCE [V] IC [A]  
VDS [V] ID [A] Tj [°C]  
VGE [V]  
VGS [V]  
Min  
Max  
VF [V]  
IF [A]  
Boost Diode  
Static  
25  
1,58  
1,75  
1,69  
1,9(1)  
VF  
IR  
Forward voltage  
30  
125  
150  
V
Reverse leakage current  
Thermal  
Vr = 650 V  
25  
10  
µA  
λpaste = 3,4 W/mK  
(PSX)  
(2)  
Rth(j-s)  
Thermal resistance junction to sink  
Dynamic  
1,8  
K/W  
25  
65,31  
73,95  
80,44  
27,1  
IRRM  
Peak recovery current  
125  
150  
25  
A
trr  
Reverse recovery time  
125  
150  
25  
55,95  
102,01  
1,24  
ns  
di/dt=5242 A/µs  
di/dt=5023 A/µs  
di/dt=4998 A/µs  
Qr  
Recovered charge  
-5/15  
350  
40  
125  
150  
25  
1,87  
μC  
2,66  
0,462  
0,683  
0,772  
6528  
6096  
5695  
Erec  
Reverse recovered energy  
Peak rate of fall of recovery current  
125  
150  
25  
mWs  
A/µs  
(dirf/dt)max  
125  
150  
Copyright Vincotech  
7
01 Jun. 2021 / Revision 4  
10-FY07HVA050RG-L984F88  
datasheet  
Characteristic Values  
Symbol  
Parameter  
Conditions  
Values  
Typ  
Unit  
VCE [V] IC [A]  
VDS [V] ID [A] Tj [°C]  
VF [V] IF [A]  
VGE [V]  
VGS [V]  
Min  
Max  
Thermistor  
Static  
R
ΔR/R  
P
Rated resistance  
Deviation of R100  
Power dissipation  
Power dissipation constant  
B-value  
25  
22  
kΩ  
%
R100 = 1484 Ω  
100  
-5  
5
5
mW  
mW/K  
K
d
25  
1,5  
B(25/50)  
Tol. ±1 %  
Tol. ±1 %  
3962  
4000  
B(25/100)  
B-value  
K
Vincotech Thermistor Reference  
I
(1)  
Value at chip level  
(2)  
Only valid with pre-applied Vincotech thermal interface material.  
Copyright Vincotech  
8
01 Jun. 2021 / Revision 4  
10-FY07HVA050RG-L984F88  
datasheet  
Buck Switch Characteristics  
figure 1.  
IGBT  
figure 2.  
IGBT  
Typical output characteristics  
Typical output characteristics  
IC = f(VCE  
)
IC = f(VCE)  
150  
150  
VGE  
:
7 V  
8 V  
125  
100  
75  
50  
25  
0
125  
100  
75  
50  
25  
0
9 V  
10 V  
11 V  
12 V  
13 V  
14 V  
15 V  
16 V  
17 V  
0,0  
0,5  
1,0  
1,5  
2,0  
2,5  
3,0  
0,0  
0,5  
1,0  
1,5  
2,0  
2,5  
3,0  
V
CE(V)  
VCE(V)  
tp  
=
tp  
=
250  
15  
μs  
V
250  
150  
μs  
°C  
25 °C  
VGE  
=
Tj =  
125 °C  
150 °C  
Tj:  
VGE from 7 V to 17 V in steps of 1 V  
figure 3.  
IGBT  
figure 4.  
IGBT  
Typical transfer characteristics  
Transient thermal impedance as a function of pulse width  
IC = f(VGE  
)
Zth(j-s) = f(tp)  
1
50  
10  
40  
30  
20  
10  
0
10  
-1  
10  
0,5  
0,2  
0,1  
-2  
10  
0,05  
0,02  
0,01  
0,005  
0
-3  
0
0
10  
-5  
-4  
10  
-3  
10  
-2  
10  
-1  
10  
0
10  
1
10  
2
2
4
6
8
10  
10  
10  
tp(s)  
V
GE(V)  
tp  
VCE  
=
=
250  
10  
μs  
V
D =  
tp / T  
1,228  
25 °C  
125 °C  
150 °C  
Rth(j-s) =  
Tj:  
K/W  
IGBT thermal model values  
R (K/W)  
τ (s)  
5,07E-02  
1,43E-01  
5,97E-01  
2,58E-01  
1,27E-01  
5,33E-02  
3,25E+00  
5,26E-01  
9,03E-02  
2,71E-02  
5,65E-03  
7,25E-04  
Copyright Vincotech  
9
01 Jun. 2021 / Revision 4  
10-FY07HVA050RG-L984F88  
datasheet  
Buck Switch Characteristics  
figure 5.  
IGBT  
Safe operating area  
IC = f(VCE  
)
1000  
100  
10  
1
0,1  
0,01  
1
10  
100  
1000  
10000  
V
CE(V)  
D =  
single pulse  
Ts =  
80  
15  
°C  
V
VGE  
=
Tj =  
Tjmax  
Copyright Vincotech  
10  
01 Jun. 2021 / Revision 4  
10-FY07HVA050RG-L984F88  
datasheet  
Buck Diode Characteristics  
figure 6.  
FWD  
figure 7.  
FWD  
Typical forward characteristics  
Transient thermal impedance as a function of pulse width  
IF = f(VF)  
Zth(j-s) = f(tp)  
1
80  
60  
40  
20  
0
10  
0
10  
-1  
10  
0,5  
0,2  
0,1  
-2  
10  
0,05  
0,02  
0,01  
0,005  
0
-3  
10  
-5  
-4  
10  
-3  
10  
-2  
10  
-1  
10  
0
1
2
0,0  
0,5  
1,0  
1,5  
2,0  
2,5  
3,0  
10  
10  
10  
10  
tp(s)  
VF(V)  
tp  
=
250  
μs  
D =  
tp / T  
1,803  
25 °C  
125 °C  
150 °C  
Rth(j-s) =  
Tj:  
K/W  
FWD thermal model values  
R (K/W)  
τ (s)  
5,16E-02  
1,29E-01  
6,80E-01  
4,86E-01  
3,20E-01  
1,36E-01  
5,27E+00  
5,85E-01  
8,65E-02  
2,55E-02  
5,42E-03  
7,50E-04  
Copyright Vincotech  
11  
01 Jun. 2021 / Revision 4  
10-FY07HVA050RG-L984F88  
datasheet  
Boost Switch Characteristics  
figure 8.  
IGBT  
figure 9.  
IGBT  
Typical output characteristics  
Typical output characteristics  
IC = f(VCE  
)
IC = f(VCE)  
150  
150  
VGE  
:
7 V  
8 V  
125  
100  
75  
50  
25  
0
125  
100  
75  
50  
25  
0
9 V  
10 V  
11 V  
12 V  
13 V  
14 V  
15 V  
16 V  
17 V  
0,0  
0,5  
1,0  
1,5  
2,0  
2,5  
3,0  
0,0  
0,5  
1,0  
1,5  
2,0  
2,5  
3,0  
V
CE(V)  
VCE(V)  
tp  
=
tp  
=
250  
15  
μs  
V
250  
150  
μs  
°C  
25 °C  
VGE  
=
Tj =  
125 °C  
150 °C  
Tj:  
VGE from 7 V to 17 V in steps of 1 V  
figure 10.  
IGBT  
figure 11.  
IGBT  
Typical transfer characteristics  
Transient thermal impedance as a function of pulse width  
IC = f(VGE  
)
Zth(j-s) = f(tp)  
1
50  
10  
40  
30  
20  
10  
0
10  
-1  
10  
0,5  
0,2  
0,1  
-2  
10  
0,05  
0,02  
0,01  
0,005  
0
-3  
0
0
10  
-5  
-4  
10  
-3  
10  
-2  
10  
-1  
10  
0
10  
1
10  
2
2
4
6
8
10  
10  
10  
tp(s)  
V
GE(V)  
tp  
VCE  
=
=
250  
10  
μs  
V
D =  
tp / T  
1,228  
25 °C  
125 °C  
150 °C  
Rth(j-s) =  
Tj:  
K/W  
IGBT thermal model values  
R (K/W)  
τ (s)  
5,07E-02  
1,43E-01  
5,97E-01  
2,58E-01  
1,27E-01  
5,33E-02  
3,25E+00  
5,26E-01  
9,03E-02  
2,71E-02  
5,65E-03  
7,25E-04  
Copyright Vincotech  
12  
01 Jun. 2021 / Revision 4  
10-FY07HVA050RG-L984F88  
datasheet  
Boost Switch Characteristics  
figure 12.  
IGBT  
Safe operating area  
IC = f(VCE  
)
1000  
100  
10  
1
0,1  
0,01  
1
10  
100  
1000  
10000  
V
CE(V)  
D =  
single pulse  
Ts =  
80  
15  
°C  
V
VGE  
=
Tj =  
Tjmax  
Copyright Vincotech  
13  
01 Jun. 2021 / Revision 4  
10-FY07HVA050RG-L984F88  
datasheet  
Boost Diode Characteristics  
figure 13.  
FWD  
figure 14.  
FWD  
Typical forward characteristics  
Transient thermal impedance as a function of pulse width  
IF = f(VF)  
Zth(j-s) = f(tp)  
1
80  
60  
40  
20  
0
10  
0
10  
-1  
10  
0,5  
0,2  
0,1  
-2  
10  
0,05  
0,02  
0,01  
0,005  
0
-3  
10  
-5  
-4  
10  
-3  
10  
-2  
10  
-1  
10  
0
1
2
0,0  
0,5  
1,0  
1,5  
2,0  
2,5  
3,0  
10  
10  
10  
10  
tp(s)  
VF(V)  
tp  
=
250  
μs  
D =  
tp / T  
1,803  
25 °C  
125 °C  
150 °C  
Rth(j-s) =  
Tj:  
K/W  
FWD thermal model values  
R (K/W)  
τ (s)  
5,16E-02  
1,29E-01  
6,80E-01  
4,86E-01  
3,20E-01  
1,36E-01  
5,27E+00  
5,85E-01  
8,65E-02  
2,55E-02  
5,42E-03  
7,50E-04  
Copyright Vincotech  
14  
01 Jun. 2021 / Revision 4  
10-FY07HVA050RG-L984F88  
datasheet  
Thermistor Characteristics  
figure 15.  
Thermistor  
Typical NTC characteristic as function of temperature  
RT = f(T)  
25000  
20000  
15000  
10000  
5000  
0
20  
40  
60  
80  
100  
120  
140  
T(°C)  
Copyright Vincotech  
15  
01 Jun. 2021 / Revision 4  
10-FY07HVA050RG-L984F88  
datasheet  
Buck Switching Characteristics  
figure 16.  
IGBT  
figure 17.  
IGBT  
Typical switching energy losses as a function of collector current  
Typical switching energy losses as a function of gate resistor  
E = f(IC)  
E = f(Rg)  
1,25  
1,00  
0,75  
0,50  
0,25  
0,00  
1,25  
1,00  
0,75  
0,50  
0,25  
0,00  
Eoff  
Eon  
Eon  
Eoff  
Eon  
Eoff  
Eoff  
Eoff  
Eon  
Eon  
Eoff  
Eon  
0
10  
20  
30  
40  
50  
60  
70  
80  
IC(A)  
0
5
10  
15  
20  
25  
30  
35  
Rg(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
=
=
=
=
VCE  
VGE  
IC  
=
=
=
350  
-5/15  
8
V
V
Ω
Ω
125 °C  
150 °C  
350  
-5/15  
40  
V
V
A
125 °C  
150 °C  
Tj:  
Tj:  
Rgon  
Rgoff  
8
figure 18.  
FWD  
figure 19.  
FWD  
Typical reverse recovered energy loss as a function of collector current  
Typical reverse recovered energy loss as a function of gate resistor  
Erec = f(IC)  
Erec = f(Rg)  
1,25  
1,00  
0,75  
0,50  
0,25  
0,00  
1,0  
0,8  
0,6  
0,4  
0,2  
0,0  
Erec  
Erec  
Erec  
Erec  
Erec  
Erec  
0
10  
20  
30  
40  
50  
60  
70  
80  
0
5
10  
15  
20  
25  
30  
35  
IC(A)  
Rg(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
350  
-5/15  
8
V
V
Ω
125 °C  
150 °C  
350  
-5/15  
40  
V
125 °C  
150 °C  
Tj:  
Tj:  
V
A
Copyright Vincotech  
16  
01 Jun. 2021 / Revision 4  
10-FY07HVA050RG-L984F88  
datasheet  
Buck Switching Characteristics  
figure 20.  
IGBT  
figure 21.  
IGBT  
Typical switching times as a function of collector current  
Typical switching times as a function of gate resistor  
t = f(IC)  
t = f(Rg)  
0
10  
0
10  
td(off)  
td(off)  
-1  
10  
-1  
10  
td(on)  
td(on)  
tf  
tf  
tr  
tr  
-2  
10  
-2  
10  
-3  
10  
-3  
10  
0
10  
20  
30  
40  
50  
60  
70  
80  
IC(A)  
0
5
10  
15  
20  
25  
30  
35  
Rg(Ω)  
With an inductive load at  
With an inductive load at  
Tj =  
Tj =  
150  
350  
-5/15  
8
°C  
V
150  
350  
-5/15  
40  
°C  
VCE  
=
=
=
=
VCE  
=
=
=
V
V
A
VGE  
Rgon  
Rgoff  
VGE  
IC  
V
Ω
Ω
8
figure 22.  
FWD  
figure 23.  
FWD  
Typical reverse recovery time as a function of collector current  
Typical reverse recovery time as a function of IGBT turn off gate resistor  
trr = f(IC)  
trr = f(Rgoff)  
0,12  
0,10  
0,08  
0,06  
0,04  
0,02  
0,00  
0,175  
0,150  
0,125  
0,100  
0,075  
0,050  
0,025  
0,000  
trr  
trr  
trr  
trr  
trr  
trr  
0
10  
20  
30  
40  
50  
60  
70  
80  
0
5
10  
15  
20  
25  
30  
35  
IC(A)  
Rgoff(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
350  
-5/15  
8
V
V
Ω
125 °C  
150 °C  
350  
-5/15  
40  
V
V
A
125 °C  
150 °C  
Tj:  
Tj:  
Copyright Vincotech  
17  
01 Jun. 2021 / Revision 4  
10-FY07HVA050RG-L984F88  
datasheet  
Buck Switching Characteristics  
figure 24.  
FWD  
figure 25.  
FWD  
Typical recovered charge as a function of collector current  
Typical recovered charge as a function of turn off gate resistor  
Qr = f(IC)  
Qr = f(Rgoff)  
4,5  
4,0  
3,5  
3,0  
2,5  
2,0  
1,5  
1,0  
0,5  
0,0  
3,5  
3,0  
2,5  
2,0  
1,5  
1,0  
0,5  
0,0  
Qr  
Qr  
Qr  
Qr  
Qr  
Qr  
0
10  
20  
30  
40  
50  
60  
70  
80  
0
5
10  
15  
20  
25  
30  
35  
IC(A)  
Rgoff(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
350  
-5/15  
8
V
V
Ω
125 °C  
150 °C  
350  
-5/15  
40  
V
125 °C  
150 °C  
Tj:  
Tj:  
V
A
figure 26.  
FWD  
figure 27.  
FWD  
Typical peak reverse recovery current as a function of collector current  
Typical peak reverse recovery current as a function of turn off gate resistor  
IRM = f(IC)  
IRM = f(Rgoff)  
125  
100  
75  
50  
25  
0
150  
125  
100  
75  
IRM  
IRM  
IRM  
50  
IRM  
IRM  
IRM  
25  
0
0
10  
20  
30  
40  
50  
60  
70  
80  
0
5
10  
15  
20  
25  
30  
35  
IC(A)  
Rgoff(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
350  
-5/15  
8
V
V
Ω
125 °C  
150 °C  
350  
-5/15  
40  
V
V
A
125 °C  
150 °C  
Tj:  
Tj:  
Copyright Vincotech  
18  
01 Jun. 2021 / Revision 4  
10-FY07HVA050RG-L984F88  
datasheet  
Buck Switching Characteristics  
figure 28.  
FWD  
figure 29.  
FWD  
Typical rate of fall of forward and reverse recovery current as a function of collector current  
Typical rate of fall of forward and reverse recovery current as a function of turn off gate resistor  
diF/dt, dirr/dt = f(IC)  
diF/dt, dirr/dt = f(Rgoff)  
12000  
15000  
12500  
10000  
7500  
5000  
2500  
0
diF/dt ‒ ‒ ‒ ‒ ‒  
diF/dt ‒ ‒ ‒ ‒ ‒  
dirr/dt ──────  
dirr/dt ──────  
10000  
8000  
6000  
4000  
2000  
0
0
10  
20  
30  
40  
50  
60  
70  
80  
IC(A)  
0
5
10  
15  
20  
25  
30  
35  
R
goff(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
350  
-5/15  
8
V
125 °C  
150 °C  
350  
-5/15  
40  
V
V
A
125 °C  
150 °C  
Tj:  
Tj:  
V
Ω
figure 30.  
IGBT  
Reverse bias safe operating area  
IC = f(VCE  
)
120  
IC MAX  
100  
80  
60  
40  
20  
0
0
100  
200  
300  
400  
500  
600  
700  
800  
V
CE(V)  
Tj =  
At  
150  
8
°C  
Ω
Rgon  
Rgoff  
=
=
8
Ω
Copyright Vincotech  
19  
01 Jun. 2021 / Revision 4  
10-FY07HVA050RG-L984F88  
datasheet  
Boost Switching Characteristics  
figure 31.  
IGBT  
figure 32.  
IGBT  
Typical switching energy losses as a function of collector current  
Typical switching energy losses as a function of gate resistor  
E = f(IC)  
E = f(Rg)  
1,25  
1,00  
0,75  
0,50  
0,25  
0,00  
1,25  
1,00  
0,75  
0,50  
0,25  
0,00  
Eoff  
Eon  
Eon  
Eoff  
Eon  
Eon  
Eoff  
Eoff  
Eoff  
Eon  
Eoff  
Eon  
0
10  
20  
30  
40  
50  
60  
70  
80  
IC(A)  
0
5
10  
15  
20  
25  
30  
35  
Rg(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
=
=
=
=
VCE  
VGE  
IC  
=
=
=
350  
-5/15  
8
V
V
Ω
Ω
125 °C  
150 °C  
350  
-5/15  
40  
V
V
A
125 °C  
150 °C  
Tj:  
Tj:  
Rgon  
Rgoff  
8
figure 33.  
FWD  
figure 34.  
FWD  
Typical reverse recovered energy loss as a function of collector current  
Typical reverse recovered energy loss as a function of gate resistor  
Erec = f(IC)  
Erec = f(Rg)  
1,25  
1,00  
0,75  
0,50  
0,25  
0,00  
1,0  
0,8  
0,6  
0,4  
0,2  
0,0  
Erec  
Erec  
Erec  
Erec  
Erec  
Erec  
0
10  
20  
30  
40  
50  
60  
70  
80  
IC(A)  
0
5
10  
15  
20  
25  
30  
35  
Rg(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
350  
-5/15  
8
V
V
Ω
125 °C  
150 °C  
350  
-5/15  
40  
V
125 °C  
150 °C  
Tj:  
Tj:  
V
A
Copyright Vincotech  
20  
01 Jun. 2021 / Revision 4  
10-FY07HVA050RG-L984F88  
datasheet  
Boost Switching Characteristics  
figure 35.  
IGBT  
figure 36.  
IGBT  
Typical switching times as a function of collector current  
Typical switching times as a function of gate resistor  
t = f(IC)  
t = f(Rg)  
0
10  
0
10  
td(off)  
td(off)  
-1  
10  
-1  
10  
td(on)  
td(on)  
tf  
tf  
tr  
tr  
-2  
10  
-2  
10  
-3  
10  
-3  
10  
0
10  
20  
30  
40  
50  
60  
70  
80  
IC(A)  
0
5
10  
15  
20  
25  
30  
35  
Rg(Ω)  
With an inductive load at  
With an inductive load at  
Tj =  
Tj =  
150  
350  
-5/15  
8
°C  
V
150  
350  
-5/15  
40  
°C  
VCE  
=
=
=
=
VCE  
=
=
=
V
V
A
VGE  
Rgon  
Rgoff  
VGE  
IC  
V
Ω
Ω
8
figure 37.  
FWD  
figure 38.  
FWD  
Typical reverse recovery time as a function of collector current  
Typical reverse recovery time as a function of IGBT turn off gate resistor  
trr = f(IC)  
trr = f(Rgoff)  
0,150  
0,125  
0,100  
0,075  
0,050  
0,025  
0,000  
0,200  
0,175  
0,150  
0,125  
0,100  
0,075  
0,050  
0,025  
0,000  
trr  
trr  
trr  
trr  
trr  
trr  
0
10  
20  
30  
40  
50  
60  
70  
80  
IC(A)  
0
5
10  
15  
20  
25  
30  
35  
R
goff(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
350  
-5/15  
8
V
V
Ω
125 °C  
150 °C  
350  
-5/15  
40  
V
V
A
125 °C  
150 °C  
Tj:  
Tj:  
Copyright Vincotech  
21  
01 Jun. 2021 / Revision 4  
10-FY07HVA050RG-L984F88  
datasheet  
Boost Switching Characteristics  
figure 39.  
FWD  
figure 40.  
FWD  
Typical recovered charge as a function of collector current  
Typical recovered charge as a function of turn off gate resistor  
Qr = f(IC)  
Qr = f(Rgoff)  
4,5  
4,0  
3,5  
3,0  
2,5  
2,0  
1,5  
1,0  
0,5  
0,0  
3,5  
3,0  
2,5  
2,0  
1,5  
1,0  
0,5  
0,0  
Qr  
Qr  
Qr  
Qr  
Qr  
Qr  
0
10  
20  
30  
40  
50  
60  
70  
80  
0
5
10  
15  
20  
25  
30  
35  
IC(A)  
Rgoff(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
350  
-5/15  
8
V
V
Ω
125 °C  
150 °C  
350  
-5/15  
40  
V
125 °C  
150 °C  
Tj:  
Tj:  
V
A
figure 41.  
FWD  
figure 42.  
FWD  
Typical peak reverse recovery current as a function of collector current  
Typical peak reverse recovery current as a function of turn off gate resistor  
IRM = f(IC)  
IRM = f(Rgoff)  
125  
100  
75  
50  
25  
0
125  
100  
75  
50  
25  
0
IRM  
IRM  
IRM  
IRM  
IRM  
IRM  
0
10  
20  
30  
40  
50  
60  
70  
80  
IC(A)  
0
5
10  
15  
20  
25  
30  
35  
R
goff(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
350  
-5/15  
8
V
V
Ω
125 °C  
150 °C  
350  
-5/15  
40  
V
V
A
125 °C  
150 °C  
Tj:  
Tj:  
Copyright Vincotech  
22  
01 Jun. 2021 / Revision 4  
10-FY07HVA050RG-L984F88  
datasheet  
Boost Switching Characteristics  
figure 43.  
FWD  
figure 44.  
FWD  
Typical rate of fall of forward and reverse recovery current as a function of collector current  
Typical rate of fall of forward and reverse recovery current as a function of turn off gate resistor  
diF/dt, dirr/dt = f(IC)  
diF/dt, dirr/dt = f(Rgoff)  
9000  
12500  
10000  
7500  
5000  
2500  
0
diF/dt ‒ ‒ ‒ ‒ ‒  
diF/dt ‒ ‒ ‒ ‒ ‒  
dirr/dt ──────  
8000  
dirr/dt ──────  
7000  
6000  
5000  
4000  
3000  
2000  
1000  
0
0
10  
20  
30  
40  
50  
60  
70  
80  
IC(A)  
0
5
10  
15  
20  
25  
30  
35  
R
goff(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
350  
-5/15  
8
V
V
Ω
125 °C  
150 °C  
350  
-5/15  
40  
V
V
A
125 °C  
150 °C  
Tj:  
Tj:  
figure 45.  
IGBT  
Reverse bias safe operating area  
IC = f(VCE  
)
120  
IC MAX  
100  
80  
60  
40  
20  
0
0
100  
200  
300  
400  
500  
600  
700  
800  
V
CE(V)  
Tj =  
At  
150  
8
°C  
Ω
Rgon  
Rgoff  
=
=
8
Ω
Copyright Vincotech  
23  
01 Jun. 2021 / Revision 4  
10-FY07HVA050RG-L984F88  
datasheet  
Switching Definitions  
figure 46.  
IGBT  
figure 47.  
IGBT  
Turn-off Switching Waveforms & definition of tdoff, tEoff (ttEoff = integrating time for Eoff  
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)  
tdoff  
IC  
IC  
VGE  
VGE  
VCE  
tEoff  
VCE  
tEon  
figure 48.  
IGBT  
figure 49.  
IGBT  
Turn-off Switching Waveforms & definition of tf  
Turn-on Switching Waveforms & definition of tr  
IC  
IC  
VCE  
tr  
VCE  
tf  
Copyright Vincotech  
24  
01 Jun. 2021 / Revision 4  
10-FY07HVA050RG-L984F88  
datasheet  
Switching Definitions  
figure 50.  
FWD  
figure 51.  
FWD  
Turn-off Switching Waveforms & definition of trr  
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)  
Qr  
IF  
IF  
fitted  
VF  
Copyright Vincotech  
25  
01 Jun. 2021 / Revision 4  
10-FY07HVA050RG-L984F88  
datasheet  
Ordering Code  
Version  
Ordering Code  
Without thermal paste  
10-FY07HVA050RG-L984F88  
10-FY07HVA050RG-L984F88-/7/  
10-FY07HVA050RG-L984F88-/3/  
With thermal paste (4,4 W/mK, PTM6000)  
With thermal paste (3,4 W/mK, PSX-P7)  
Marking  
Name  
Date code  
UL & VIN  
Lot  
Serial  
Text  
NN-NNNNNNNNNNNNNN-  
TTTTTTVV  
WWYY  
UL VIN  
LLLLL  
SSSS  
Type&Ver  
Lot number  
Serial  
Date code  
Datamatrix  
TTTTTTTVV  
LLLLL  
SSSS  
WWYY  
Outline  
Pin table [mm]  
Pin  
1
X
Y
0
0
Function  
G14  
52,2  
49,2  
2
S14  
3
not assembled  
4
26,1  
23,1  
3
0
Therm2  
5
0
Therm1  
S12  
6
0
7
0
0
G12  
DC+  
DC+  
DC-1  
DC-1  
G11  
S11  
8
0
8
9
0
10,5  
17,7  
20,2  
28,2  
28,2  
28,2  
28,2  
28,2  
28,2  
28,2  
28,2  
28,2  
28,2  
28,2  
28,2  
20,2  
17,7  
10,5  
8
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
23  
24  
25  
26  
27  
28  
0
0
0
3
10  
G21  
S21  
13  
20,35  
22,85  
29,35  
31,85  
39,2  
42,2  
49,2  
52,2  
52,2  
52,2  
52,2  
52,2  
26,1  
Ph2  
Ph2  
Ph1  
Ph1  
S22  
G22  
S13  
G13  
DC-2  
DC-2  
DC+  
DC+  
A20  
22,1  
Copyright Vincotech  
26  
01 Jun. 2021 / Revision 4  
10-FY07HVA050RG-L984F88  
datasheet  
Pinout  
DC+  
8,9,26,27  
T12  
T14  
D20  
G12  
7
G14  
1
S12  
6
S14  
2
D22  
D21  
T22  
Ph1  
18,19  
T21  
S21  
15  
G21  
14  
G22  
21  
S22  
20  
A20  
28  
Ph2  
16,17  
T11  
T13  
D14  
D12  
G11  
12  
G13  
23  
S13  
22  
S11  
13  
Rt  
10,11  
DC-1  
24,25  
DC-2  
Therm2  
4
Therm1  
5
Identification  
Component  
Voltage  
Current  
Function  
Comment  
ID  
T11, T13, T12, T14  
IGBT  
FWD  
IGBT  
FWD  
NTC  
650 V  
650 V  
650 V  
650 V  
50 A  
30 A  
50 A  
30 A  
Buck Switch  
Buck Diode  
Boost Switch  
Boost Diode  
Thermistor  
D21, D22  
T21, T22  
D12, D14, D20  
Rt  
Copyright Vincotech  
27  
01 Jun. 2021 / Revision 4  
10-FY07HVA050RG-L984F88  
datasheet  
Packaging instruction  
Handling instruction  
Standard packaging quantity (SPQ) 100  
>SPQ  
Standard  
<SPQ  
Sample  
Handling instructions for flow 1 packages see vincotech.com website.  
Package data  
Package data for flow 1 packages see vincotech.com website.  
Vincotech thermistor reference  
See Vincotech thermistor reference table at vincotech.com website.  
UL recognition and file number  
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.  
Document No.:  
Date:  
Modification:  
Pages  
Merging Low- and High-side component IDs and Functions  
Update of Ordering Codes  
10-FY07HVA050RG-L984F88-D4-14  
1 Jun. 2021  
DISCLAIMER  
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to  
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations  
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,  
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said  
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons  
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine  
the suitability of the information and the product for reader’s intended use.  
LIFE SUPPORT POLICY  
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval  
of Vincotech.  
As used herein:  
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or  
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be  
reasonably expected to result in significant injury to the user.  
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause  
the failure of the life support device or system, or to affect its safety or effectiveness.  
Copyright Vincotech  
28  
01 Jun. 2021 / Revision 4  

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