10-EZ06PMA020SA-L925A38T [VINCOTECH]
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;![10-EZ06PMA020SA-L925A38T](http://pdffile.icpdf.com/pdf2/p00359/img/icpdf/10-EZ06PMA02_2202717_icpdf.jpg)
型号: | 10-EZ06PMA020SA-L925A38T |
厂家: | ![]() |
描述: | Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current |
文件: | 总29页 (文件大小:9376K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
![](http://public.icpdf.com/style/img/ads.jpg)
10-EZ06PMA020SA-L925A38T
datasheet
flowPIM E1
600 V / 20 A
Features
flow E1 12 mm housing
● Trench Fieldstop IGBT3 technology
● Standard industrial housing
● Optimized Rth(j-s) with Phase Change Material
● Built-in NTC
Schematic
Target applications
● Industrial Drives
Types
● 10-EZ06PMA020SA-L925A38T
Copyright Vincotech
1
18 Jun. 2021 / Revision 3
10-EZ06PMA020SA-L925A38T
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Inverter Switch
VCES
Collector-emitter voltage
600
28
V
A
IC
Collector current (DC current)
Repetitive peak collector current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Tj = 150 °C
ICRM
tp limited by Tjmax
Tj = Tjmax
60
A
Ptot
66
W
V
VGES
Gate-emitter voltage
±20
6
tSC
Short circuit ratings
VGE = 15 V, VCC = 360 V
µs
°C
Tjmax
Maximum junction temperature
175
Inverter Diode
VRRM
Peak repetitive reverse voltage
600
28
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
40
A
Ptot
50
W
°C
Tjmax
Maximum junction temperature
175
Brake Switch
VCES
Collector-emitter voltage
600
28
V
A
IC
Collector current (DC current)
Repetitive peak collector current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Tj = 150 °C
ICRM
tp limited by Tjmax
Tj = Tjmax
60
A
Ptot
66
W
V
VGES
Gate-emitter voltage
±20
6
tSC
Short circuit ratings
VGE = 15 V, VCC = 360 V
µs
°C
Tjmax
Maximum junction temperature
175
Copyright Vincotech
2
18 Jun. 2021 / Revision 3
10-EZ06PMA020SA-L925A38T
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Brake Diode
VRRM
Peak repetitive reverse voltage
600
20
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
20
A
Ptot
41
W
°C
Tjmax
Maximum junction temperature
175
Rectifier Diode
VRRM
Peak repetitive reverse voltage
1600
47
V
A
IF
Forward current (DC current)
Surge (non-repetitive) forward current
Surge current capability
Tj = Tjmax
Ts = 80 °C
Tj = 150 °C
Ts = 80 °C
IFSM
I2t
270
370
61
A
Single Half Sine Wave,
tp = 10 ms
A2s
W
°C
Ptot
Total power dissipation
Tj = Tjmax
Tjmax
Maximum junction temperature
150
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching
condition
-40…+(Tjmax - 25)
Isolation Properties
Isolation voltage
Isolation voltage
Creepage distance
Clearance
Visol
Visol
DC Test Voltage*
AC Voltage
tp = 2 s
6000
2500
V
tp = 1 min
V
>12,7
>12,7
≥ 600
mm
mm
Comparative Tracking Index
*100 % tested in production
CTI
Copyright Vincotech
3
18 Jun. 2021 / Revision 3
10-EZ06PMA020SA-L925A38T
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Inverter Switch
Static
VGE(th)
VCEsat
ICES
IGES
rg
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
VCE = VGE
0,00029 25
5
5,8
6,5
V
25
20
1,1
1,55
1,75
1,9(1)
15
0
V
125
600
0
25
25
1,1
µA
nA
Ω
20
300
None
1100
71
Cies
Coes
Cres
Qg
pF
pF
pF
nC
Output capacitance
f = 1 Mhz
0
25
25
25
Reverse transfer capacitance
Gate charge
32
VCC = 480 V
15
20
120
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
1,44
K/W
25
67,2
66,2
td(on)
Turn-on delay time
Rise time
125
150
25
ns
ns
66,2
26
tr
125
150
25
27,2
28
Rgon = 16 Ω
Rgoff = 16 Ω
115,8
133,8
137,6
69,11
87,03
88,48
0,45
td(off)
Turn-off delay time
Fall time
125
150
25
ns
±15
350
20
tf
125
150
25
ns
QrFWD=0,87 µC
QrFWD=1,64 µC
QrFWD=1,91 µC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
125
150
25
0,624
0,677
0,426
0,578
0,613
mWs
mWs
Eoff
125
150
Copyright Vincotech
4
18 Jun. 2021 / Revision 3
10-EZ06PMA020SA-L925A38T
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Inverter Diode
Static
25
1,25
1,7
1,95(1)
VF
IR
Forward voltage
20
125
150
1,58
1,58
V
Reverse leakage current
Thermal
Vr = 600 V
25
27
µA
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
1,91
K/W
25
8,88
11,5
IRRM
Peak recovery current
125
150
25
A
12,4
229,09
306,28
325,67
0,87
trr
Reverse recovery time
125
150
25
ns
di/dt=759 A/µs
di/dt=802 A/µs
di/dt=896 A/µs
Qr
Recovered charge
±15
350
20
125
150
25
1,64
μC
1,91
0,221
0,407
0,477
38,26
81,03
82,44
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
25
mWs
A/µs
(dirf/dt)max
125
150
Copyright Vincotech
5
18 Jun. 2021 / Revision 3
10-EZ06PMA020SA-L925A38T
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Brake Switch
Static
VGE(th)
VCEsat
ICES
IGES
rg
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
VCE = VGE
0,00029 25
5
5,8
6,5
V
25
20
1,1
1,55
1,75
1,9(1)
15
0
V
125
600
0
25
25
1,1
µA
nA
Ω
20
300
None
1100
71
Cies
Coes
Cres
Qg
pF
pF
pF
nC
Output capacitance
f = 1 Mhz
0
25
25
25
Reverse transfer capacitance
Gate charge
32
VCC = 480 V
15
20
120
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
1,44
K/W
25
15,8
15,2
td(on)
Turn-on delay time
Rise time
125
150
25
ns
ns
15,6
12,2
tr
125
150
25
14
14,8
Rgon = 8 Ω
Rgoff = 8 Ω
153,8
169
td(off)
Turn-off delay time
Fall time
125
150
25
ns
173,6
68,05
79,29
89,65
0,358
0,555
0,595
0,494
0,708
0,749
0/15
400
20
tf
125
150
25
ns
QrFWD=0,699 µC
QrFWD=1,37 µC
QrFWD=1,52 µC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
125
150
25
mWs
mWs
Eoff
125
150
Copyright Vincotech
6
18 Jun. 2021 / Revision 3
10-EZ06PMA020SA-L925A38T
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Brake Diode
Static
25
1,25
1,58
1,52
1,95(1)
27
VF
IR
Forward voltage
10
V
125
Reverse leakage current
Vr = 600 V
25
µA
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
2,33
K/W
25
10,72
10,6
IRRM
Peak recovery current
125
150
25
A
11,21
192,6
296,88
323,43
0,699
1,37
trr
Reverse recovery time
125
150
25
ns
di/dt=1281 A/µs
di/dt=726 A/µs
di/dt=725 A/µs
Qr
Recovered charge
0/15
400
20
125
150
25
μC
1,52
0,203
0,404
0,447
1655
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
25
mWs
A/µs
(dirf/dt)max
125
150
32,85
33,98
Copyright Vincotech
7
18 Jun. 2021 / Revision 3
10-EZ06PMA020SA-L925A38T
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
Rectifier Diode
Static
25
1,15
1,1
1,5(1)
VF
IR
Forward voltage
28
V
125
25
100
Reverse leakage current
Vr = 1600 V
µA
150
1000
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
1,15
K/W
Thermistor
Static
R
ΔR/R
P
Rated resistance
Deviation of R100
Power dissipation
Power dissipation constant
B-value
25
5
kΩ
%
R100 = 493 Ω
100
-5
5
245
1,4
mW
mW/K
K
d
25
B(25/50)
Tol. ±2 %
Tol. ±2 %
3375
3437
B(25/100)
B-value
K
Vincotech Thermistor Reference
K
(1)
Value at chip level
(2)
Only valid with pre-applied Vincotech thermal interface material.
Copyright Vincotech
8
18 Jun. 2021 / Revision 3
10-EZ06PMA020SA-L925A38T
datasheet
Inverter Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
60
60
VGE
:
7 V
8 V
50
40
30
20
10
50
40
30
20
10
9 V
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
0
0
0
0
1
2
3
4
5
1
2
3
4
5
V
CE(V)
V
CE(V)
tp
=
=
tp
=
250
15
μs
V
250
125
μs
°C
25 °C
Tj:
VGE
Tj =
125 °C
VGE from 7 V to 17 V in steps of 1 V
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Short circuit withstand time as a function of VGE
IC = f(VGE
)
tsc = f(VGE)
20
13
12
11
10
9
15
10
5
8
7
6
0
0
5
10
2
4
6
8
10
12
11
12
13
14
15
16
V
GE(V)
V
GE(V)
tp
VCE
=
=
VCE
=
250
10
μs
V
At
333
333
V
25 °C
Tj:
Tj ≤
125 °C
°C
Copyright Vincotech
9
18 Jun. 2021 / Revision 3
10-EZ06PMA020SA-L925A38T
datasheet
Inverter Switch Characteristics
figure 5.
IGBT
figure 6.
IGBT
Transient thermal impedance as a function of pulse width
Typical short circuit current as a function of VGE
ISC = f(VGE
)
Zth(j-s) = f(tp)
1
10
350
300
250
200
150
100
0
10
-1
10
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
-3
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
12
13
14
15
16
17
18
19
20
21
10
10
10
10
tp(s)
V
GE(V)
VCE
=
At
333
333
V
D =
tp / T
1,442
Tj ≤
°C
Rth(j-s) =
K/W
IGBT thermal model values
R (K/W)
τ (s)
7,44E-02
1,73E-01
6,82E-01
2,86E-01
1,12E-01
1,15E-01
1,94E+00
2,52E-01
4,62E-02
1,04E-02
2,50E-03
4,24E-04
figure 7.
IGBT
figure 8.
IGBT
Safe operating area
Gate voltage vs gate charge
IC = f(VCE
)
VGE = f(Qg)
100
20,0
17,5
15,0
12,5
10,0
7,5
10µs
10
1
100µs
1ms
10ms
100ms
DC
0,1
0,01
5,0
2,5
0,0
1
10
100
1000
10000
0
25
50
75
100
125
150
V
CE(V)
Qg(μC)
D =
IC
=
single pulse
33
25
A
Ts =
Tj =
80
15
°C
V
°C
VGE
=
Tj =
Tjmax
Copyright Vincotech
10
18 Jun. 2021 / Revision 3
10-EZ06PMA020SA-L925A38T
datasheet
Inverter Diode Characteristics
figure 9.
FWD
figure 10.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
60
50
40
30
20
10
0
10
0
10
-1
10
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
-3
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,0
0,5
1,0
1,5
2,0
2,5
3,0
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
1,914
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
8,07E-02
2,18E-01
8,50E-01
4,32E-01
2,00E-01
1,34E-01
2,21E+00
2,22E-01
4,41E-02
9,35E-03
1,60E-03
2,12E-04
Copyright Vincotech
11
18 Jun. 2021 / Revision 3
10-EZ06PMA020SA-L925A38T
datasheet
Brake Switch Characteristics
figure 11.
IGBT
figure 12.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
60
60
VGE
:
7 V
8 V
50
40
30
20
10
50
40
30
20
10
9 V
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
0
0
0
0
1
2
3
4
5
1
2
3
4
5
V
CE(V)
V
CE(V)
tp
VGE
=
=
tp
=
250
15
μs
V
250
125
μs
°C
25 °C
Tj:
Tj =
125 °C
VGE from 7 V to 17 V in steps of 1 V
figure 13.
IGBT
figure 14.
IGBT
Typical transfer characteristics
Short circuit withstand time as a function of VGE
IC = f(VGE
)
tsc = f(VGE)
20
13
12
11
10
9
15
10
5
8
7
6
0
0
5
10
2
4
6
8
10
12
11
12
13
14
15
16
V
GE(V)
V
GE(V)
tp
VCE
=
=
VCE
=
250
10
μs
V
At
333
333
V
25 °C
Tj:
Tj ≤
125 °C
°C
Copyright Vincotech
12
18 Jun. 2021 / Revision 3
10-EZ06PMA020SA-L925A38T
datasheet
Brake Switch Characteristics
figure 15.
IGBT
figure 16.
IGBT
Transient thermal impedance as a function of pulse width
Typical short circuit current as a function of VGE
ISC = f(VGE
)
Zth(j-s) = f(tp)
1
10
350
300
250
200
150
100
0
10
-1
10
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
-3
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
12
13
14
15
16
17
18
19
20
21
10
10
10
10
tp(s)
V
GE(V)
VCE
=
At
333
333
V
D =
tp / T
1,442
Tj ≤
°C
Rth(j-s) =
K/W
IGBT thermal model values
R (K/W)
τ (s)
7,44E-02
1,73E-01
6,82E-01
2,86E-01
1,12E-01
1,15E-01
1,94E+00
2,52E-01
4,62E-02
1,04E-02
2,50E-03
4,24E-04
figure 17.
IGBT
figure 18.
IGBT
Safe operating area
Gate voltage vs gate charge
IC = f(VCE
)
VGE = f(Qg)
100
20,0
17,5
15,0
12,5
10,0
7,5
10µs
10
1
100µs
1ms
10ms
100ms
DC
0,1
0,01
5,0
2,5
0,0
1
10
100
1000
10000
0
25
50
75
100
125
150
V
CE(V)
Qg(μC)
D =
IC
=
single pulse
33
25
A
Ts =
Tj =
80
15
°C
V
°C
VGE
=
Tj =
Tjmax
Copyright Vincotech
13
18 Jun. 2021 / Revision 3
10-EZ06PMA020SA-L925A38T
datasheet
Brake Diode Characteristics
figure 19.
FWD
figure 20.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
20
15
10
5
10
0
10
-1
10
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
-3
0
0,0
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,5
1,0
1,5
2,0
2,5
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
2,328
25 °C
Tj:
125 °C
Rth(j-s) =
K/W
FWD thermal model values
R (K/W)
τ (s)
8,21E-02
2,22E-01
9,31E-01
5,61E-01
3,70E-01
1,62E-01
3,78E+00
2,71E-01
4,55E-02
8,74E-03
1,93E-03
3,48E-04
Copyright Vincotech
14
18 Jun. 2021 / Revision 3
10-EZ06PMA020SA-L925A38T
datasheet
Rectifier Diode Characteristics
figure 21.
Rectifier
figure 22.
Rectifier
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
80
60
40
20
0
10
0
10
-1
10
0,5
0,2
-2
10
0,1
0,05
0,02
0,01
0,005
0
-3
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,00
0,25
0,50
μs
0,75
1,00
1,25
1,50
1,75
2,00
VF(V)
10
10
10
10
tp(s)
tp
=
250
D =
tp / T
1,149
25 °C
Tj:
125 °C
Rth(j-s) =
K/W
Rectifier thermal model values
R (K/W)
τ (s)
8,29E-02
1,02E-01
4,20E-01
3,78E-01
1,08E-01
5,78E-02
7,59E+00
6,72E-01
1,19E-01
4,22E-02
4,04E-03
7,21E-04
Copyright Vincotech
15
18 Jun. 2021 / Revision 3
10-EZ06PMA020SA-L925A38T
datasheet
Thermistor Characteristics
figure 23.
Thermistor
Typical NTC characteristic as function of temperature
RT = f(T)
6000
5000
4000
3000
2000
1000
0
20
40
60
80
100
120
140
T(°C)
Copyright Vincotech
16
18 Jun. 2021 / Revision 3
10-EZ06PMA020SA-L925A38T
datasheet
Inverter Switching Characteristics
figure 24.
IGBT
figure 25.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(IC)
E = f(Rg)
1,75
1,50
1,25
1,00
0,75
0,50
0,25
0,00
1,50
1,25
1,00
0,75
0,50
0,25
0,00
Eon
Eon
Eon
Eon
Eon
Eon
Eoff
Eoff
Eoff
Eoff
Eoff
Eoff
0
5
10
15
20
25
30
35
40
IC(A)
0
10
20
30
40
50
60
70
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
350
±15
16
V
V
Ω
Ω
125 °C
150 °C
350
±15
20
V
V
A
125 °C
150 °C
Tj:
Tj:
Rgon
Rgoff
16
figure 26.
FWD
figure 27.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(IC)
Erec = f(Rg)
0,6
0,5
0,4
0,3
0,2
0,1
0,0
0,6
0,5
0,4
0,3
0,2
0,1
0,0
Erec
Erec
Erec
Erec
Erec
Erec
0
5
10
15
20
25
30
35
40
0
10
20
30
40
50
60
70
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
16
V
V
Ω
125 °C
150 °C
350
±15
20
V
125 °C
150 °C
Tj:
Tj:
V
A
Copyright Vincotech
17
18 Jun. 2021 / Revision 3
10-EZ06PMA020SA-L925A38T
datasheet
Inverter Switching Characteristics
figure 28.
IGBT
figure 29.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(IC)
t = f(Rg)
0
10
0
10
td(off)
td(on)
td(off)
-1
10
-2
10
-3
10
-1
10
-2
10
-3
10
tf
tr
tf
td(on)
tr
0
5
10
15
20
25
30
35
40
IC(A)
0
10
20
30
40
50
60
70
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
350
±15
16
°C
V
150
350
±15
20
°C
VCE
=
=
=
=
VCE
=
=
=
V
V
A
VGE
Rgon
Rgoff
VGE
IC
V
Ω
Ω
16
figure 30.
FWD
figure 31.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn off gate resistor
trr = f(IC)
trr = f(Rgoff)
0,45
0,40
0,35
0,30
0,25
0,20
0,15
0,10
0,05
0,00
0,6
0,5
0,4
0,3
0,2
0,1
0,0
trr
trr
trr
trr
trr
trr
0
5
10
15
20
25
30
35
40
0
10
20
30
40
50
60
70
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
16
V
V
Ω
125 °C
150 °C
350
±15
20
V
125 °C
150 °C
Tj:
Tj:
V
A
Copyright Vincotech
18
18 Jun. 2021 / Revision 3
10-EZ06PMA020SA-L925A38T
datasheet
Inverter Switching Characteristics
figure 32.
FWD
figure 33.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of turn off gate resistor
Qr = f(IC)
Qr = f(Rgoff)
3,0
2,5
2,0
1,5
1,0
0,5
0,0
2,25
2,00
1,75
1,50
1,25
1,00
0,75
0,50
0,25
0,00
Qr
Qr
Qr
Qr
Qr
Qr
0
5
10
15
20
25
30
35
40
0
10
20
30
40
50
60
70
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
16
V
V
Ω
125 °C
150 °C
350
±15
20
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 34.
FWD
figure 35.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of turn off gate resistor
IRM = f(IC)
IRM = f(Rgoff)
12,5
10,0
7,5
40
35
30
25
20
15
10
5
IRM
IRM
IRM
5,0
2,5
IRM
IRM
IRM
0,0
0
0
5
10
15
20
25
30
35
40
0
10
20
30
40
50
60
70
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
16
V
V
Ω
125 °C
150 °C
350
±15
20
V
125 °C
150 °C
Tj:
Tj:
V
A
Copyright Vincotech
19
18 Jun. 2021 / Revision 3
10-EZ06PMA020SA-L925A38T
datasheet
Inverter Switching Characteristics
figure 36.
FWD
figure 37.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn off gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgoff)
900
6000
5000
4000
3000
2000
1000
0
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
800
dirr/dt ──────
700
600
500
400
300
200
100
0
0
5
10
15
20
25
30
35
40
IC(A)
0
10
20
30
40
50
60
70
R
goff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
16
V
V
Ω
125 °C
150 °C
350
±15
20
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 38.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
45
IC MAX
40
35
30
25
20
15
10
5
0
0
100
200
300
400
500
600
700
V
CE(V)
Tj =
At
150
16
°C
Ω
Rgon
Rgoff
=
=
16
Ω
Copyright Vincotech
20
18 Jun. 2021 / Revision 3
10-EZ06PMA020SA-L925A38T
datasheet
Brake Switching Characteristics
figure 39.
IGBT
figure 40.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(IC)
E = f(Rg)
1,50
1,25
1,00
0,75
0,50
0,25
0,00
1,75
1,50
1,25
1,00
0,75
0,50
0,25
0,00
Eon
Eon
Eoff
Eoff
Eon
Eon
Eon
Eon
Eoff
Eoff
Eoff
Eoff
0
5
10
15
20
25
30
35
40
IC(A)
0
10
20
30
40
50
60
70
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
400
0/15
8
V
V
Ω
Ω
125 °C
150 °C
400
0/15
20
V
V
A
125 °C
150 °C
Tj:
Tj:
Rgon
Rgoff
8
figure 41.
FWD
figure 42.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(IC)
Erec = f(Rg)
0,6
0,5
0,4
0,3
0,2
0,1
0,0
0,5
0,4
0,3
0,2
0,1
0,0
Erec
Erec
Erec
Erec
Erec
Erec
0
5
10
15
20
25
30
35
40
0
10
20
30
40
50
60
70
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
400
0/15
8
V
V
Ω
125 °C
150 °C
400
0/15
20
V
125 °C
150 °C
Tj:
Tj:
V
A
Copyright Vincotech
21
18 Jun. 2021 / Revision 3
10-EZ06PMA020SA-L925A38T
datasheet
Brake Switching Characteristics
figure 43.
IGBT
figure 44.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(IC)
t = f(Rg)
0
10
0
10
td(off)
td(off)
-1
10
tf
tr
-1
10
td(on)
tr
td(on)
-2
10
tf
-3
10
-2
10
0
5
10
15
20
25
30
35
40
IC(A)
0
10
20
30
40
50
60
70
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
400
0/15
8
°C
V
150
400
0/15
20
°C
VCE
=
=
=
=
VCE
=
=
=
V
V
A
VGE
Rgon
Rgoff
VGE
IC
V
Ω
Ω
8
figure 45.
FWD
figure 46.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn off gate resistor
trr = f(IC)
trr = f(Rgoff)
0,45
0,40
0,35
0,30
0,25
0,20
0,15
0,10
0,05
0,00
0,6
0,5
0,4
0,3
0,2
0,1
0,0
trr
trr
trr
trr
trr
trr
0
5
10
15
20
25
30
35
40
0
10
20
30
40
50
60
70
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
400
0/15
8
V
V
Ω
125 °C
150 °C
400
0/15
20
V
125 °C
150 °C
Tj:
Tj:
V
A
Copyright Vincotech
22
18 Jun. 2021 / Revision 3
10-EZ06PMA020SA-L925A38T
datasheet
Brake Switching Characteristics
figure 47.
FWD
figure 48.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of turn off gate resistor
Qr = f(IC)
Qr = f(Rgoff)
2,25
2,00
1,75
1,50
1,25
1,00
0,75
0,50
0,25
0,00
1,75
1,50
1,25
1,00
0,75
0,50
0,25
0,00
Qr
Qr
Qr
Qr
Qr
Qr
0
5
10
15
20
25
30
35
40
0
10
20
30
40
50
60
70
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
400
0/15
8
V
V
Ω
125 °C
150 °C
400
0/15
20
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 49.
FWD
figure 50.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of turn off gate resistor
IRM = f(IC)
IRM = f(Rgoff)
15,0
12,5
10,0
7,5
17,5
15,0
12,5
10,0
7,5
IRM
IRM
IRM
IRM
IRM
5,0
5,0
IRM
2,5
2,5
0,0
0,0
0
5
10
15
20
25
30
35
40
0
10
20
30
40
50
60
70
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
400
0/15
8
V
V
Ω
125 °C
150 °C
400
0/15
20
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
23
18 Jun. 2021 / Revision 3
10-EZ06PMA020SA-L925A38T
datasheet
Brake Switching Characteristics
figure 51.
FWD
figure 52.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn off gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgoff)
3500
3000
2500
2000
1500
1000
500
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
dirr/dt ──────
3000
2500
2000
1500
1000
500
0
0
0
5
10
15
20
25
30
35
40
IC(A)
0
10
20
30
40
50
60
70
R
goff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
400
0/15
8
V
V
Ω
125 °C
150 °C
400
0/15
20
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 53.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
45
IC MAX
40
35
30
25
20
15
10
5
0
0
100
200
300
400
500
600
700
V
CE(V)
Tj =
At
150
8
°C
Ω
Rgon
Rgoff
=
=
8
Ω
Copyright Vincotech
24
18 Jun. 2021 / Revision 3
10-EZ06PMA020SA-L925A38T
datasheet
Switching Definitions
figure 54.
IGBT
figure 55.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (ttEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
figure 56.
IGBT
figure 57.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
Copyright Vincotech
25
18 Jun. 2021 / Revision 3
10-EZ06PMA020SA-L925A38T
datasheet
Switching Definitions
figure 58.
FWD
figure 59.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
Qr
IF
IF
fitted
VF
Copyright Vincotech
26
18 Jun. 2021 / Revision 3
10-EZ06PMA020SA-L925A38T
datasheet
Ordering Code
Marking
Version
Ordering Code
Without thermal paste
10-EZ06PMA020SA-L925A38T
10-EZ06PMA020SA-L925A38T-/3/
With thermal paste (3,4 W/mK, PSX-P7)
Name
Date code
UL & VIN
Lot
Serial
Text
NN-NNNNNNNNNNNNNN-
TTTTTTVV
WWYY
UL VIN
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
Datamatrix
TTTTTTTVV
LLLLL
SSSS
WWYY
Outline
Pin table [mm]
Pin
1
X
Y
0
Function
Br
32
25,6
22,4
19,2
16
2
0
DC-Br
G27
3
0
4
0
DC-Rect
G15
5
0
6
12,8
9,6
0
DC-3
G13
7
0
8
6,4
0
DC-2
G11
9
3,2
0
10
11
12
13
14
15
16
17
18
19
20
21
22
23
0
0
DC-1
Ph1
0
25,6
25,6
25,6
25,6
25,6
25,6
25,6
19,2
16
3,2
G12
9,6
Ph2
12,8
19,2
22,4
32
G14
Ph3
G16
ACIn1
ACIn2
Therm1
Therm2
ACIn3
DC+Inv
DC+Rect
25,6
19,2
16
16
25,6
22,4
25,6
12,8
6,4
6,4
Copyright Vincotech
27
18 Jun. 2021 / Revision 3
10-EZ06PMA020SA-L925A38T
datasheet
Pinout
DC+Rect
23
DC+Inv
22
T12
T14
T16
D11
G14
D13
D15
D32
D34
D36
D27
G12
12
G16
14
16
ACIn1
17
Ph1
11
ACIn2
18
Br
1
Ph2
13
ACIn3
21
Ph3
15
D31
D33
D35
T27
T11
T13
T15
D12
D14
D16
G27
3
G11
9
G13
7
G15
5
Rt
DC-Rect
4
DC-Br
2
DC-1
10
DC-2
8
DC-3
6
Therm1
19
Therm2
20
Identification
Component
Voltage
Current
Function
Comment
ID
T11, T12, T13, T14,
IGBT
600 V
20 A
Inverter Switch
Inverter Diode
T15, T16
D11, D12, D13, D14,
FWD
600 V
20 A
D15, D16
T27
IGBT
FWD
600 V
600 V
20 A
10 A
Brake Switch
Brake Diode
D27
D31, D32, D33, D34,
D35, D36
Rectifier
NTC
1600 V
28 A
Rectifier Diode
Thermistor
Rt
Copyright Vincotech
28
18 Jun. 2021 / Revision 3
10-EZ06PMA020SA-L925A38T
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 100
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow E1 packages see vincotech.com website.
Package data
Package data for flow E1 packages see vincotech.com website.
Vincotech thermistor reference
See Vincotech thermistor reference table at vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
New Datasheet format
Update characteristic of rectifier diode, leakage current max
value from 50 -> 100 uA
10-EZ06PMA020SA-L925A38T-D3-14
18 Jun. 2021
Correct static characteristic of Brake Diode to allow
simulation
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
29
18 Jun. 2021 / Revision 3
相关型号:
![](http://pdffile.icpdf.com/pdf2/p00358/img/page/10-EZ06PMA03_2196623_files/10-EZ06PMA03_2196623_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00358/img/page/10-EZ06PMA03_2196623_files/10-EZ06PMA03_2196623_2.jpg)
10-EZ06PMA030SA-L926A38T
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current
VINCOTECH
![](http://pdffile.icpdf.com/pdf2/p00368/img/page/10-EZ122PA01_2247719_files/10-EZ122PA01_2247719_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00368/img/page/10-EZ122PA01_2247719_files/10-EZ122PA01_2247719_2.jpg)
10-EZ122PA016ME-LJ67F68T
High Blocking Voltage with low drain source on state resistance;High speed SiC-MOSFET technology;Resistant to Latch-up
VINCOTECH
![](http://pdffile.icpdf.com/pdf2/p00362/img/page/10-EZ122PB03_2216982_files/10-EZ122PB03_2216982_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00362/img/page/10-EZ122PB03_2216982_files/10-EZ122PB03_2216982_2.jpg)
10-EZ122PB032ME-PE07F18T
High Blocking Voltage with low drain source on state resistance;High speed SiC-MOSFET technology;Resistant to Latch-up
VINCOTECH
![](http://pdffile.icpdf.com/pdf2/p00362/img/page/10-EZ124PA01_2216755_files/10-EZ124PA01_2216755_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00362/img/page/10-EZ124PA01_2216755_files/10-EZ124PA01_2216755_2.jpg)
10-EZ124PA016ME-LQ18F18T
High Blocking Voltage with low drain source on state resistance;High speed SiC-MOSFET technology;Resistant to Latch-up
VINCOTECH
![](http://pdffile.icpdf.com/pdf2/p00370/img/page/10-EZ124PA01_2256827_files/10-EZ124PA01_2256827_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00370/img/page/10-EZ124PA01_2256827_files/10-EZ124PA01_2256827_2.jpg)
10-EZ124PA018MR-LR09F08T
Easy paralleling;Low on-resistance;Fast switching speed;Fast recovery body diode
VINCOTECH
![](http://pdffile.icpdf.com/pdf2/p00365/img/page/10-EZ124PA03_2232603_files/10-EZ124PA03_2232603_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00365/img/page/10-EZ124PA03_2232603_files/10-EZ124PA03_2232603_2.jpg)
10-EZ124PA032ME-LQ17F18T
High Blocking Voltage with low drain source on state resistance;High speed SiC-MOSFET technology;Resistant to Latch-up
VINCOTECH
![](http://pdffile.icpdf.com/pdf2/p00368/img/page/10-EZ126PA02_2248831_files/10-EZ126PA02_2248831_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00368/img/page/10-EZ126PA02_2248831_files/10-EZ126PA02_2248831_2.jpg)
10-EZ126PA025M7-L858F78T
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC
VINCOTECH
![](http://pdffile.icpdf.com/pdf2/p00370/img/page/10-EZ126PA02_2258862_files/10-EZ126PA02_2258862_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00370/img/page/10-EZ126PA02_2258862_files/10-EZ126PA02_2258862_2.jpg)
10-EZ126PA025SC-L858F48T
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current
VINCOTECH
![](http://pdffile.icpdf.com/pdf2/p00358/img/page/10-E1126PA03_2195295_files/10-E1126PA03_2195295_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00358/img/page/10-E1126PA03_2195295_files/10-E1126PA03_2195295_2.jpg)
10-EZ126PA035M7-L859F78T
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC
VINCOTECH
![](http://pdffile.icpdf.com/pdf2/p00368/img/page/10-EZ126PA03_2247094_files/10-EZ126PA03_2247094_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00368/img/page/10-EZ126PA03_2247094_files/10-EZ126PA03_2247094_2.jpg)
10-EZ126PA035SC-L859F48T
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current
VINCOTECH
©2020 ICPDF网 联系我们和版权申明