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-SP07NIA300S5-LM38F58T [VINCOTECH]

High speed and smooth switching;Low gate charge;Very low collector emitter saturation voltage;
-SP07NIA300S5-LM38F58T
型号： -SP07NIA300S5-LM38F58T
厂家： VINCOTECH    VINCOTECH
描述：

High speed and smooth switching;Low gate charge;Very low collector emitter saturation voltage
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B0-SP07NIA300S5-LM38F58T  
datasheet  
flowNPC S3  
650 V / 300 A  
Features  
flow S3 12 mm housing  
● Three-level high efficient topology  
● Compact and low inductive design  
● Integrated NTC  
● High speed IGBT  
Schematic  
Target applications  
● UPS  
Types  
● B0-SP07NIA300S5-LM38F58T  
Copyright Vincotech  
1
07 Jul. 2021 / Revision 2  
B0-SP07NIA300S5-LM38F58T  
datasheet  
Maximum Ratings  
Tj = 25 °C, unless otherwise specified  
Parameter  
Symbol  
Conditions  
Value  
Unit  
Buck Switch  
VCES  
Collector-emitter voltage  
650  
211  
900  
291  
±20  
175  
V
A
IC  
Collector current (DC current)  
Repetitive peak collector current  
Total power dissipation  
Tj = Tjmax  
Ts = 80 °C  
Ts = 80 °C  
ICRM  
tp limited by Tjmax  
Tj = Tjmax  
A
Ptot  
W
V
VGES  
Gate-emitter voltage  
Tjmax  
Maximum junction temperature  
°C  
Buck Diode  
VRRM  
Peak repetitive reverse voltage  
650  
217  
600  
278  
175  
V
A
IF  
Forward current (DC current)  
Repetitive peak forward current  
Total power dissipation  
Tj = Tjmax  
Ts = 80 °C  
Ts = 80 °C  
IFRM  
tp limited by Tjmax  
Tj = Tjmax  
A
Ptot  
W
°C  
Tjmax  
Maximum junction temperature  
Boost Switch  
VCES  
Collector-emitter voltage  
650  
211  
900  
291  
±20  
175  
V
A
IC  
Collector current (DC current)  
Repetitive peak collector current  
Total power dissipation  
Tj = Tjmax  
Ts = 80 °C  
Ts = 80 °C  
ICRM  
tp limited by Tjmax  
Tj = Tjmax  
A
Ptot  
W
V
VGES  
Gate-emitter voltage  
Tjmax  
Maximum junction temperature  
°C  
Copyright Vincotech  
2
07 Jul. 2021 / Revision 2  
B0-SP07NIA300S5-LM38F58T  
datasheet  
Maximum Ratings  
Tj = 25 °C, unless otherwise specified  
Parameter  
Symbol  
Conditions  
Value  
Unit  
Boost Diode  
VRRM  
Peak repetitive reverse voltage  
650  
217  
600  
278  
175  
V
A
IF  
Forward current (DC current)  
Repetitive peak forward current  
Total power dissipation  
Tj = Tjmax  
Ts = 80 °C  
Ts = 80 °C  
IFRM  
tp limited by Tjmax  
Tj = Tjmax  
A
Ptot  
W
°C  
Tjmax  
Maximum junction temperature  
Boost Sw. Inv. Diode  
VRRM  
Peak repetitive reverse voltage  
650  
217  
600  
278  
175  
V
A
IF  
Forward current (DC current)  
Repetitive peak forward current  
Total power dissipation  
Tj = Tjmax  
Ts = 80 °C  
Ts = 80 °C  
IFRM  
tp limited by Tjmax  
Tj = Tjmax  
A
Ptot  
W
°C  
Tjmax  
Maximum junction temperature  
Capacitor (DC)  
VMAX  
Maximum DC voltage  
630  
V
Top  
Operation Temperature  
-55 ... 150  
°C  
Module Properties  
Thermal Properties  
Tstg  
Tjop  
Storage temperature  
-40…+125  
°C  
°C  
Operation temperature under switching  
condition  
-40…+(Tjmax - 25)  
Isolation Properties  
Isolation voltage  
Isolation voltage  
Creepage distance  
Clearance  
Visol  
Visol  
DC Test Voltage*  
AC Voltage  
tp = 2 s  
6000  
2500  
10,35  
7,81  
V
tp = 1 min  
V
mm  
mm  
Comparative Tracking Index  
*100 % tested in production  
CTI  
≥ 600  
Copyright Vincotech  
3
07 Jul. 2021 / Revision 2  
B0-SP07NIA300S5-LM38F58T  
datasheet  
Characteristic Values  
Symbol  
Parameter  
Conditions  
Values  
Typ  
Unit  
VCE [V] IC [A]  
VDS [V] ID [A] Tj [°C]  
VGE [V]  
VGS [V]  
Min  
Max  
VF [V]  
IF [A]  
Buck Switch  
Static  
VGE(th)  
Gate-emitter threshold voltage  
VCE = VGE  
0,003  
300  
25  
3,2  
4
4,8  
V
V
25  
1,43  
1,52  
1,55  
1,75(1)  
VCEsat  
Collector-emitter saturation voltage  
15  
125  
150  
ICES  
IGES  
rg  
Collector-emitter cut-off current  
Gate-emitter leakage current  
Internal gate resistance  
Input capacitance  
0
650  
0
25  
25  
200  
400  
µA  
nA  
Ω
20  
None  
18000  
520  
Cies  
Coes  
Cres  
Qg  
pF  
pF  
pF  
nC  
Output capacitance  
f = 1 Mhz  
0
25  
25  
25  
Reverse transfer capacitance  
Gate charge  
68  
VCC = 520 V  
15  
300  
656  
Thermal  
λpaste = 4,4 W/mK  
(PTM)  
(2)  
Rth(j-s)  
Thermal resistance junction to sink  
Dynamic  
0,33  
K/W  
25  
88,96  
91,2  
td(on)  
Turn-on delay time  
Rise time  
125  
150  
25  
ns  
ns  
92,16  
19,84  
21,76  
22,4  
tr  
125  
150  
25  
Rgon = 2 Ω  
Rgoff = 2 Ω  
105,92  
132,8  
139,2  
20,2  
td(off)  
Turn-off delay time  
Fall time  
125  
150  
25  
ns  
±15  
350  
180  
tf  
125  
150  
25  
27,34  
29,64  
0,893  
1,34  
ns  
QrFWD=5,58 µC  
QrFWD=11,73 µC  
QrFWD=13,36 µC  
Eon  
Turn-on energy (per pulse)  
Turn-off energy (per pulse)  
125  
150  
25  
mWs  
mWs  
1,43  
2,48  
Eoff  
125  
150  
3,86  
4,42  
Copyright Vincotech  
4
07 Jul. 2021 / Revision 2  
B0-SP07NIA300S5-LM38F58T  
datasheet  
Characteristic Values  
Symbol  
Parameter  
Conditions  
Values  
Typ  
Unit  
VCE [V] IC [A]  
VDS [V] ID [A] Tj [°C]  
VGE [V]  
VGS [V]  
Min  
Max  
VF [V]  
IF [A]  
Buck Diode  
Static  
25  
1,53  
1,49  
1,46  
1,92(1)  
15,2  
VF  
IR  
Forward voltage  
300  
125  
150  
V
Reverse leakage current  
Thermal  
Vr = 650 V  
25  
µA  
λpaste = 4,4 W/mK  
(PTM)  
(2)  
Rth(j-s)  
Thermal resistance junction to sink  
Dynamic  
0,34  
K/W  
25  
155,22  
218,33  
230,41  
56,96  
81,67  
90,55  
5,58  
IRRM  
Peak recovery current  
125  
150  
25  
A
trr  
Reverse recovery time  
125  
150  
25  
ns  
di/dt=7367 A/µs  
di/dt=7132 A/µs  
di/dt=6860 A/µs  
Qr  
Recovered charge  
±15  
350  
180  
125  
150  
25  
11,73  
13,36  
1,73  
μC  
Erec  
Reverse recovered energy  
Peak rate of fall of recovery current  
125  
150  
25  
3,43  
mWs  
A/µs  
3,83  
12043  
9166  
(dirf/dt)max  
125  
150  
7027  
Copyright Vincotech  
5
07 Jul. 2021 / Revision 2  
B0-SP07NIA300S5-LM38F58T  
datasheet  
Characteristic Values  
Symbol  
Parameter  
Conditions  
Values  
Typ  
Unit  
VCE [V] IC [A]  
VDS [V] ID [A] Tj [°C]  
VGE [V]  
VGS [V]  
Min  
Max  
VF [V]  
IF [A]  
Boost Switch  
Static  
VGE(th)  
Gate-emitter threshold voltage  
VCE = VGE  
0,003  
300  
25  
3,2  
4
4,8  
V
V
25  
1,43  
1,52  
1,55  
1,75(1)  
VCEsat  
Collector-emitter saturation voltage  
15  
125  
150  
ICES  
IGES  
rg  
Collector-emitter cut-off current  
Gate-emitter leakage current  
Internal gate resistance  
Input capacitance  
0
650  
0
25  
25  
200  
400  
µA  
nA  
Ω
20  
None  
18000  
520  
Cies  
Coes  
Cres  
Qg  
pF  
pF  
pF  
nC  
Output capacitance  
f = 1 Mhz  
0
25  
25  
25  
Reverse transfer capacitance  
Gate charge  
68  
VCC = 520 V  
15  
300  
656  
Thermal  
λpaste = 4,4 W/mK  
(PTM)  
(2)  
Rth(j-s)  
Thermal resistance junction to sink  
Dynamic  
0,33  
K/W  
25  
86,4  
88,32  
89,28  
20,8  
td(on)  
Turn-on delay time  
Rise time  
125  
150  
25  
ns  
ns  
tr  
125  
150  
25  
23,04  
24,64  
105,28  
129,92  
135,36  
21,01  
27,37  
29,84  
0,679  
1,14  
Rgon = 2 Ω  
Rgoff = 2 Ω  
td(off)  
Turn-off delay time  
Fall time  
125  
150  
25  
ns  
±15  
350  
180  
tf  
125  
150  
25  
ns  
QrFWD=5,49 µC  
QrFWD=11,25 µC  
QrFWD=13,54 µC  
Eon  
Turn-on energy (per pulse)  
Turn-off energy (per pulse)  
125  
150  
25  
mWs  
mWs  
1,23  
2,58  
Eoff  
125  
150  
3,82  
4,37  
Copyright Vincotech  
6
07 Jul. 2021 / Revision 2  
B0-SP07NIA300S5-LM38F58T  
datasheet  
Characteristic Values  
Symbol  
Parameter  
Conditions  
Values  
Typ  
Unit  
VCE [V] IC [A]  
VDS [V] ID [A] Tj [°C]  
VGE [V]  
VGS [V]  
Min  
Max  
VF [V]  
IF [A]  
Boost Diode  
Static  
25  
1,53  
1,49  
1,46  
1,92(1)  
15,2  
VF  
IR  
Forward voltage  
300  
125  
150  
V
Reverse leakage current  
Thermal  
Vr = 650 V  
25  
µA  
λpaste = 4,4 W/mK  
(PTM)  
(2)  
Rth(j-s)  
Thermal resistance junction to sink  
Dynamic  
0,34  
K/W  
25  
141,65  
189,98  
199,72  
58,8  
IRRM  
Peak recovery current  
125  
150  
25  
A
trr  
Reverse recovery time  
125  
150  
25  
87,75  
100,54  
5,49  
ns  
di/dt=6815 A/µs  
di/dt=6267 A/µs  
di/dt=6189 A/µs  
Qr  
Recovered charge  
±15  
350  
180  
125  
150  
25  
11,25  
13,54  
1,42  
μC  
Erec  
Reverse recovered energy  
Peak rate of fall of recovery current  
125  
150  
25  
2,73  
mWs  
A/µs  
3,21  
12123  
8097  
(dirf/dt)max  
125  
150  
5133  
Copyright Vincotech  
7
07 Jul. 2021 / Revision 2  
B0-SP07NIA300S5-LM38F58T  
datasheet  
Characteristic Values  
Symbol  
Parameter  
Conditions  
Values  
Typ  
Unit  
VCE [V] IC [A]  
VDS [V] ID [A] Tj [°C]  
VGE [V]  
VGS [V]  
Min  
Max  
VF [V]  
IF [A]  
Boost Sw. Inv. Diode  
Static  
25  
1,53  
1,49  
1,46  
1,92(1)  
15,2  
VF  
IR  
Forward voltage  
300  
125  
150  
V
Reverse leakage current  
Vr = 650 V  
25  
µA  
Thermal  
λpaste = 4,4 W/mK  
(PTM)  
(2)  
Rth(j-s)  
Thermal resistance junction to sink  
0,34  
K/W  
Capacitor (DC)  
Static  
DC bias voltage =  
0 V  
C
Capacitance  
25  
33  
nF  
%
Tolerance  
-5  
5
Thermistor  
Static  
R
ΔR/R  
P
Rated resistance  
Deviation of R100  
Power dissipation  
Power dissipation constant  
B-value  
25  
22  
kΩ  
%
R100 = 1484 Ω  
100  
-5  
5
5
mW  
mW/K  
K
d
25  
1,5  
B(25/50)  
Tol. ±1 %  
Tol. ±1 %  
3962  
4000  
B(25/100)  
B-value  
K
Vincotech Thermistor Reference  
I
(1)  
Value at chip level  
(2)  
Only valid with pre-applied Vincotech thermal interface material.  
Copyright Vincotech  
8
07 Jul. 2021 / Revision 2  
B0-SP07NIA300S5-LM38F58T  
datasheet  
Buck Switch Characteristics  
figure 1.  
IGBT  
figure 2.  
IGBT  
Typical output characteristics  
Typical output characteristics  
IC = f(VCE  
)
IC = f(VCE)  
800  
800  
VGE  
:
7 V  
8 V  
9 V  
10 V  
11 V  
12 V  
13 V  
14 V  
15 V  
16 V  
17 V  
600  
400  
200  
0
600  
400  
200  
0
0,0  
0,5  
1,0  
1,5  
2,0  
2,5  
3,0  
0,0  
0,5  
1,0  
1,5  
2,0  
2,5  
3,0  
V
CE(V)  
VCE(V)  
tp  
=
tp  
=
250  
15  
μs  
V
250  
150  
μs  
°C  
25 °C  
VGE  
=
Tj =  
125 °C  
150 °C  
Tj:  
VGE from 7 V to 17 V in steps of 1 V  
figure 3.  
IGBT  
figure 4.  
IGBT  
Typical transfer characteristics  
Transient thermal impedance as a function of pulse width  
IC = f(VGE  
)
Zth(j-s) = f(tp)  
0
300  
10  
250  
200  
150  
100  
50  
-1  
10  
-2  
10  
0,5  
0,2  
0,1  
-3  
10  
0,05  
0,02  
0,01  
0,005  
0
-4  
0
10  
-5  
-4  
10  
-3  
10  
-2  
10  
-1  
10  
0
10  
1
10  
2
0
1
2
3
4
5
6
7
8
10  
10  
tp(s)  
V
GE(V)  
tp  
=
=
250  
10  
μs  
V
D =  
tp / T  
0,326  
25 °C  
VCE  
125 °C  
150 °C  
Rth(j-s) =  
Tj:  
K/W  
IGBT thermal model values  
R (K/W)  
τ (s)  
5,25E-02  
8,00E-02  
1,45E-01  
3,51E-02  
1,33E-02  
4,41E+00  
6,71E-01  
5,30E-02  
7,06E-03  
5,20E-04  
Copyright Vincotech  
9
07 Jul. 2021 / Revision 2  
B0-SP07NIA300S5-LM38F58T  
datasheet  
Buck Switch Characteristics  
figure 5.  
IGBT  
Safe operating area  
IC = f(VCE  
)
1000  
100  
10  
1
0,1  
0,01  
1
10  
100  
1000  
10000  
V
CE(V)  
D =  
single pulse  
Ts =  
80  
15  
°C  
V
VGE  
=
Tj =  
Tjmax  
Copyright Vincotech  
10  
07 Jul. 2021 / Revision 2  
B0-SP07NIA300S5-LM38F58T  
datasheet  
Buck Diode Characteristics  
figure 6.  
FWD  
figure 7.  
FWD  
Typical forward characteristics  
Transient thermal impedance as a function of pulse width  
IF = f(VF)  
Zth(j-s) = f(tp)  
0
800  
600  
400  
200  
0
10  
-1  
10  
-2  
10  
0,5  
0,2  
0,1  
-3  
10  
0,05  
0,02  
0,01  
0,005  
0
-4  
10  
-5  
-4  
10  
-3  
10  
-2  
10  
-1  
10  
0
1
2
0,0  
0,5  
1,0  
1,5  
2,0  
2,5  
3,0  
10  
10  
10  
10  
tp(s)  
VF(V)  
tp  
=
250  
μs  
D =  
tp / T  
0,342  
25 °C  
125 °C  
150 °C  
Rth(j-s) =  
Tj:  
K/W  
FWD thermal model values  
R (K/W)  
τ (s)  
3,55E-02  
8,34E-02  
1,74E-01  
3,60E-02  
1,28E-02  
2,97E+00  
5,51E-01  
5,48E-02  
6,87E-03  
5,34E-04  
Copyright Vincotech  
11  
07 Jul. 2021 / Revision 2  
B0-SP07NIA300S5-LM38F58T  
datasheet  
Boost Switch Characteristics  
figure 8.  
IGBT  
figure 9.  
IGBT  
Typical output characteristics  
Typical output characteristics  
IC = f(VCE  
)
IC = f(VCE)  
800  
800  
VGE  
:
7 V  
8 V  
9 V  
10 V  
11 V  
12 V  
13 V  
14 V  
15 V  
16 V  
17 V  
600  
400  
200  
0
600  
400  
200  
0
0,0  
0,5  
1,0  
1,5  
2,0  
2,5  
3,0  
0,0  
0,5  
1,0  
1,5  
2,0  
2,5  
3,0  
V
CE(V)  
VCE(V)  
tp  
=
tp  
=
250  
15  
μs  
V
250  
150  
μs  
°C  
25 °C  
VGE  
=
Tj =  
125 °C  
150 °C  
Tj:  
VGE from 7 V to 17 V in steps of 1 V  
figure 10.  
IGBT  
figure 11.  
IGBT  
Typical transfer characteristics  
Transient thermal impedance as a function of pulse width  
IC = f(VGE  
)
Zth(j-s) = f(tp)  
0
300  
10  
250  
200  
150  
100  
50  
-1  
10  
-2  
10  
0,5  
0,2  
0,1  
-3  
10  
0,05  
0,02  
0,01  
0,005  
0
-4  
0
10  
-5  
-4  
10  
-3  
10  
-2  
10  
-1  
10  
0
10  
1
10  
2
0
1
2
3
4
5
6
7
8
10  
10  
tp(s)  
V
GE(V)  
tp  
=
=
250  
10  
μs  
V
D =  
tp / T  
0,326  
25 °C  
VCE  
125 °C  
150 °C  
Rth(j-s) =  
Tj:  
K/W  
IGBT thermal model values  
R (K/W)  
τ (s)  
5,25E-02  
8,00E-02  
1,45E-01  
3,51E-02  
1,33E-02  
4,41E+00  
6,71E-01  
5,30E-02  
7,06E-03  
5,20E-04  
Copyright Vincotech  
12  
07 Jul. 2021 / Revision 2  
B0-SP07NIA300S5-LM38F58T  
datasheet  
Boost Switch Characteristics  
figure 12.  
IGBT  
Safe operating area  
IC = f(VCE  
)
1000  
100  
10  
1
0,1  
0,01  
1
10  
100  
1000  
10000  
V
CE(V)  
D =  
single pulse  
Ts =  
80  
15  
°C  
V
VGE  
=
Tj =  
Tjmax  
Copyright Vincotech  
13  
07 Jul. 2021 / Revision 2  
B0-SP07NIA300S5-LM38F58T  
datasheet  
Boost Diode Characteristics  
figure 13.  
FWD  
figure 14.  
FWD  
Typical forward characteristics  
Transient thermal impedance as a function of pulse width  
IF = f(VF)  
Zth(j-s) = f(tp)  
0
800  
600  
400  
200  
0
10  
-1  
10  
-2  
10  
0,5  
0,2  
0,1  
-3  
10  
0,05  
0,02  
0,01  
0,005  
0
-4  
10  
-5  
-4  
10  
-3  
10  
-2  
10  
-1  
10  
0
1
2
0,0  
0,5  
1,0  
1,5  
2,0  
2,5  
3,0  
10  
10  
10  
10  
tp(s)  
VF(V)  
tp  
=
250  
μs  
D =  
tp / T  
0,342  
25 °C  
125 °C  
150 °C  
Rth(j-s) =  
Tj:  
K/W  
FWD thermal model values  
R (K/W)  
τ (s)  
3,55E-02  
8,34E-02  
1,74E-01  
3,60E-02  
1,28E-02  
2,97E+00  
5,51E-01  
5,48E-02  
6,87E-03  
5,34E-04  
Copyright Vincotech  
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07 Jul. 2021 / Revision 2  
B0-SP07NIA300S5-LM38F58T  
datasheet  
Boost Sw. Inv. Diode Characteristics  
figure 15.  
FWD  
figure 16.  
FWD  
Typical forward characteristics  
Transient thermal impedance as a function of pulse width  
IF = f(VF)  
Zth(j-s) = f(tp)  
0
800  
600  
400  
200  
0
10  
-1  
10  
-2  
10  
0,5  
0,2  
0,1  
-3  
10  
0,05  
0,02  
0,01  
0,005  
0
-4  
10  
-5  
-4  
10  
-3  
10  
-2  
10  
-1  
10  
0
1
2
0,0  
0,5  
1,0  
1,5  
2,0  
2,5  
3,0  
10  
10  
10  
10  
tp(s)  
VF(V)  
tp  
=
250  
μs  
D =  
tp / T  
0,342  
25 °C  
125 °C  
150 °C  
Rth(j-s) =  
Tj:  
K/W  
FWD thermal model values  
R (K/W)  
τ (s)  
3,55E-02  
8,34E-02  
1,74E-01  
3,60E-02  
1,28E-02  
2,97E+00  
5,51E-01  
5,48E-02  
6,87E-03  
5,34E-04  
Copyright Vincotech  
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07 Jul. 2021 / Revision 2  
B0-SP07NIA300S5-LM38F58T  
datasheet  
Thermistor Characteristics  
figure 17.  
Thermistor  
Typical NTC characteristic as function of temperature  
RT = f(T)  
25000  
20000  
15000  
10000  
5000  
0
20  
40  
60  
80  
100  
120  
140  
T(°C)  
Copyright Vincotech  
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07 Jul. 2021 / Revision 2  
B0-SP07NIA300S5-LM38F58T  
datasheet  
Buck Switching Characteristics  
figure 18.  
IGBT  
figure 19.  
IGBT  
Typical switching energy losses as a function of collector current  
Typical switching energy losses as a function of gate resistor  
E = f(IC)  
E = f(Rg)  
10  
5
4
3
2
1
0
Eon  
Eon  
Eoff  
Eoff  
Eoff  
Eoff  
8
Eon  
6
Eoff  
Eoff  
4
Eon  
Eon  
Eon  
2
0
0
50  
100  
150  
200  
250  
300  
350  
0
1
2
3
4
5
6
7
8
9
IC(A)  
Rg(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
=
=
=
=
VCE  
VGE  
IC  
=
=
=
350  
±15  
2
V
V
Ω
Ω
125 °C  
150 °C  
350  
±15  
180  
V
V
A
125 °C  
150 °C  
Tj:  
Tj:  
Rgon  
Rgoff  
2
figure 20.  
FWD  
figure 21.  
FWD  
Typical reverse recovered energy loss as a function of collector current  
Typical reverse recovered energy loss as a function of gate resistor  
Erec = f(IC)  
Erec = f(Rg)  
5
4
3
2
1
0
5
4
3
2
1
0
Erec  
Erec  
Erec  
Erec  
Erec  
Erec  
0
50  
100  
150  
200  
250  
300  
350  
0
1
2
3
4
5
6
7
8
9
IC(A)  
Rg(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
350  
±15  
2
V
V
Ω
125 °C  
150 °C  
350  
±15  
180  
V
V
A
125 °C  
150 °C  
Tj:  
Tj:  
Copyright Vincotech  
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07 Jul. 2021 / Revision 2  
B0-SP07NIA300S5-LM38F58T  
datasheet  
Buck Switching Characteristics  
figure 22.  
IGBT  
figure 23.  
IGBT  
Typical switching times as a function of collector current  
Typical switching times as a function of gate resistor  
t = f(IC)  
t = f(Rg)  
0
10  
0
10  
td(on)  
td(off)  
td(off)  
td(on)  
-1  
10  
tr  
tf  
-1  
10  
-2  
10  
tr  
tf  
-3  
10  
-2  
10  
0
50  
100  
150  
200  
250  
300  
350  
IC(A)  
0
1
2
3
4
5
6
7
8
9
Rg(Ω)  
With an inductive load at  
With an inductive load at  
Tj =  
Tj =  
150  
350  
±15  
2
°C  
150  
350  
±15  
180  
°C  
V
VCE  
=
=
=
=
VCE  
=
=
=
V
V
Ω
Ω
VGE  
Rgon  
Rgoff  
VGE  
IC  
V
A
2
figure 24.  
FWD  
figure 25.  
FWD  
Typical reverse recovery time as a function of collector current  
Typical reverse recovery time as a function of IGBT turn off gate resistor  
trr = f(IC)  
trr = f(Rgoff)  
0,150  
0,125  
0,100  
0,075  
0,050  
0,025  
0,000  
0,150  
0,125  
0,100  
0,075  
0,050  
0,025  
0,000  
trr  
trr  
trr  
trr  
trr  
trr  
0
50  
100  
150  
200  
250  
300  
350  
0
1
2
3
4
5
6
7
8
9
IC(A)  
Rgoff(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
350  
±15  
2
V
V
Ω
125 °C  
150 °C  
350  
±15  
180  
V
V
A
125 °C  
150 °C  
Tj:  
Tj:  
Copyright Vincotech  
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07 Jul. 2021 / Revision 2  
B0-SP07NIA300S5-LM38F58T  
datasheet  
Buck Switching Characteristics  
figure 26.  
FWD  
figure 27.  
FWD  
Typical recovered charge as a function of collector current  
Typical recovered charge as a function of turn off gate resistor  
Qr = f(IC)  
Qr = f(Rgoff)  
20,0  
17,5  
15,0  
12,5  
10,0  
7,5  
17,5  
15,0  
12,5  
10,0  
7,5  
Qr  
Qr  
Qr  
Qr  
Qr  
Qr  
5,0  
5,0  
2,5  
2,5  
0,0  
0,0  
0
50  
100  
150  
200  
250  
300  
350  
0
1
2
3
4
5
6
7
8
9
IC(A)  
Rgoff(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
350  
±15  
2
V
125 °C  
150 °C  
350  
±15  
180  
V
V
A
125 °C  
150 °C  
Tj:  
Tj:  
V
Ω
figure 28.  
FWD  
figure 29.  
FWD  
Typical peak reverse recovery current as a function of collector current  
Typical peak reverse recovery current as a function of turn off gate resistor  
IRM = f(IC)  
IRM = f(Rgoff)  
300  
250  
200  
150  
100  
50  
300  
250  
200  
150  
100  
50  
IRM  
IRM  
IRM  
IRM  
IRM  
IRM  
0
0
0
50  
100  
150  
200  
250  
300  
350  
0
1
2
3
4
5
6
7
8
9
IC(A)  
Rgoff(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
350  
±15  
2
V
125 °C  
150 °C  
350  
±15  
180  
V
V
A
125 °C  
150 °C  
Tj:  
Tj:  
V
Ω
Copyright Vincotech  
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07 Jul. 2021 / Revision 2  
B0-SP07NIA300S5-LM38F58T  
datasheet  
Buck Switching Characteristics  
figure 30.  
FWD  
figure 31.  
FWD  
Typical rate of fall of forward and reverse recovery current as a function of collector current  
Typical rate of fall of forward and reverse recovery current as a function of turn off gate resistor  
diF/dt, dirr/dt = f(IC)  
diF/dt, dirr/dt = f(Rgoff)  
22500  
17500  
15000  
12500  
10000  
7500  
5000  
2500  
0
diF/dt ‒ ‒ ‒ ‒ ‒  
diF/dt ‒ ‒ ‒ ‒ ‒  
dirr/dt ──────  
20000  
dirr/dt ──────  
17500  
15000  
12500  
10000  
7500  
5000  
2500  
0
0
50  
100  
150  
200  
250  
300  
350  
IC(A)  
0
1
2
3
4
5
6
7
8
9
R
goff(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
350  
±15  
2
V
V
Ω
125 °C  
150 °C  
350  
±15  
180  
V
V
A
125 °C  
150 °C  
Tj:  
Tj:  
figure 32.  
IGBT  
Reverse bias safe operating area  
IC = f(VCE  
)
700  
IC MAX  
600  
500  
400  
300  
200  
100  
0
0
100  
200  
300  
400  
500  
600  
700  
800  
V
CE(V)  
Tj =  
At  
150  
2
°C  
Ω
Rgon  
Rgoff  
=
=
2
Ω
Copyright Vincotech  
20  
07 Jul. 2021 / Revision 2  
B0-SP07NIA300S5-LM38F58T  
datasheet  
Boost Switching Characteristics  
figure 33.  
IGBT  
figure 34.  
IGBT  
Typical switching energy losses as a function of collector current  
Typical switching energy losses as a function of gate resistor  
E = f(IC)  
E = f(Rg)  
10  
5
4
3
2
1
0
Eoff  
Eoff  
Eoff  
Eoff  
Eon  
Eon  
Eon  
8
Eoff  
6
Eoff  
4
Eon  
Eon  
Eon  
2
0
0
50  
100  
150  
200  
250  
300  
350  
0
1
2
3
4
5
6
7
8
9
IC(A)  
Rg(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
=
=
=
=
VCE  
VGE  
IC  
=
=
=
350  
±15  
2
V
V
Ω
Ω
125 °C  
150 °C  
350  
±15  
180  
V
V
A
125 °C  
150 °C  
Tj:  
Tj:  
Rgon  
Rgoff  
2
figure 35.  
FWD  
figure 36.  
FWD  
Typical reverse recovered energy loss as a function of collector current  
Typical reverse recovered energy loss as a function of gate resistor  
Erec = f(IC)  
Erec = f(Rg)  
4,5  
4,0  
3,5  
3,0  
2,5  
2,0  
1,5  
1,0  
0,5  
0,0  
4,0  
3,5  
3,0  
2,5  
2,0  
1,5  
1,0  
0,5  
0,0  
Erec  
Erec  
Erec  
Erec  
Erec  
Erec  
0
50  
100  
150  
200  
250  
300  
350  
0
1
2
3
4
5
6
7
8
9
IC(A)  
Rg(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
350  
±15  
2
V
V
Ω
125 °C  
150 °C  
350  
±15  
180  
V
V
A
125 °C  
150 °C  
Tj:  
Tj:  
Copyright Vincotech  
21  
07 Jul. 2021 / Revision 2  
B0-SP07NIA300S5-LM38F58T  
datasheet  
Boost Switching Characteristics  
figure 37.  
IGBT  
figure 38.  
IGBT  
Typical switching times as a function of collector current  
Typical switching times as a function of gate resistor  
t = f(IC)  
t = f(Rg)  
0
10  
0
10  
td(on)  
td(off)  
td(off)  
td(on)  
-1  
10  
tr  
tf  
-1  
10  
-2  
10  
tr  
tf  
-3  
10  
-2  
10  
0
50  
100  
150  
200  
250  
300  
350  
IC(A)  
0
1
2
3
4
5
6
7
8
9
Rg(Ω)  
With an inductive load at  
With an inductive load at  
Tj =  
Tj =  
150  
350  
±15  
2
°C  
150  
350  
±15  
180  
°C  
V
VCE  
=
=
=
=
VCE  
=
=
=
V
V
Ω
Ω
VGE  
Rgon  
Rgoff  
VGE  
IC  
V
A
2
figure 39.  
FWD  
figure 40.  
FWD  
Typical reverse recovery time as a function of collector current  
Typical reverse recovery time as a function of IGBT turn off gate resistor  
trr = f(IC)  
trr = f(Rgoff)  
0,150  
0,125  
0,100  
0,075  
0,050  
0,025  
0,000  
0,150  
0,125  
0,100  
0,075  
0,050  
0,025  
0,000  
trr  
trr  
trr  
trr  
trr  
trr  
0
50  
100  
150  
200  
250  
300  
350  
0
1
2
3
4
5
6
7
8
9
IC(A)  
Rgoff(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
350  
±15  
2
V
V
Ω
125 °C  
150 °C  
350  
±15  
180  
V
V
A
125 °C  
150 °C  
Tj:  
Tj:  
Copyright Vincotech  
22  
07 Jul. 2021 / Revision 2  
B0-SP07NIA300S5-LM38F58T  
datasheet  
Boost Switching Characteristics  
figure 41.  
FWD  
figure 42.  
FWD  
Typical recovered charge as a function of collector current  
Typical recovered charge as a function of turn off gate resistor  
Qr = f(IC)  
Qr = f(Rgoff)  
20,0  
17,5  
15,0  
12,5  
10,0  
7,5  
17,5  
15,0  
12,5  
10,0  
7,5  
Qr  
Qr  
Qr  
Qr  
Qr  
Qr  
5,0  
5,0  
2,5  
2,5  
0,0  
0,0  
0
50  
100  
150  
200  
250  
300  
350  
0
1
2
3
4
5
6
7
8
9
IC(A)  
Rgoff(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
350  
±15  
2
V
125 °C  
150 °C  
350  
±15  
180  
V
V
A
125 °C  
150 °C  
Tj:  
Tj:  
V
Ω
figure 43.  
FWD  
figure 44.  
FWD  
Typical peak reverse recovery current as a function of collector current  
Typical peak reverse recovery current as a function of turn off gate resistor  
IRM = f(IC)  
IRM = f(Rgoff)  
250  
200  
150  
100  
50  
250  
200  
150  
100  
50  
IRM  
IRM  
IRM  
IRM  
IRM  
IRM  
0
0
0
50  
100  
150  
200  
250  
300  
350  
0
1
2
3
4
5
6
7
8
9
IC(A)  
Rgoff(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
350  
±15  
2
V
125 °C  
150 °C  
350  
±15  
180  
V
V
A
125 °C  
150 °C  
Tj:  
Tj:  
V
Ω
Copyright Vincotech  
23  
07 Jul. 2021 / Revision 2  
B0-SP07NIA300S5-LM38F58T  
datasheet  
Boost Switching Characteristics  
figure 45.  
FWD  
figure 46.  
FWD  
Typical rate of fall of forward and reverse recovery current as a function of collector current  
Typical rate of fall of forward and reverse recovery current as a function of turn off gate resistor  
diF/dt, dirr/dt = f(IC)  
diF/dt, dirr/dt = f(Rgoff)  
20000  
17500  
15000  
12500  
10000  
7500  
5000  
2500  
0
diF/dt ‒ ‒ ‒ ‒ ‒  
diF/dt ‒ ‒ ‒ ‒ ‒  
dirr/dt ──────  
17500  
15000  
12500  
10000  
7500  
5000  
2500  
0
dirr/dt ──────  
0
50  
100  
150  
200  
250  
300  
350  
0
1
2
3
4
5
6
7
8
9
IC(A)  
Rgoff(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
350  
±15  
2
V
V
Ω
125 °C  
150 °C  
350  
±15  
180  
V
V
A
125 °C  
150 °C  
Tj:  
Tj:  
figure 47.  
IGBT  
Reverse bias safe operating area  
IC = f(VCE  
)
700  
IC MAX  
600  
500  
400  
300  
200  
100  
0
0
100  
200  
300  
400  
500  
600  
700  
800  
V
CE(V)  
Tj =  
At  
150  
2
°C  
Ω
Rgon  
Rgoff  
=
=
2
Ω
Copyright Vincotech  
24  
07 Jul. 2021 / Revision 2  
B0-SP07NIA300S5-LM38F58T  
datasheet  
Switching Definitions  
figure 48.  
IGBT  
figure 49.  
IGBT  
Turn-off Switching Waveforms & definition of tdoff, tEoff (ttEoff = integrating time for Eoff  
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)  
tdoff  
IC  
IC  
VGE  
VGE  
VCE  
tEoff  
VCE  
tEon  
figure 50.  
IGBT  
figure 51.  
IGBT  
Turn-off Switching Waveforms & definition of tf  
Turn-on Switching Waveforms & definition of tr  
IC  
IC  
VCE  
tr  
VCE  
tf  
Copyright Vincotech  
25  
07 Jul. 2021 / Revision 2  
B0-SP07NIA300S5-LM38F58T  
datasheet  
Switching Definitions  
figure 52.  
FWD  
figure 53.  
FWD  
Turn-off Switching Waveforms & definition of trr  
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)  
Qr  
IF  
IF  
fitted  
VF  
Copyright Vincotech  
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07 Jul. 2021 / Revision 2  
B0-SP07NIA300S5-LM38F58T  
datasheet  
Ordering Code  
Marking  
Version  
Ordering Code  
With thermal paste (4,4 W/mK, PTM6000)  
B0-SP07NIA300S5-LM38F58T-/7/  
Name  
Date code  
UL & VIN  
Lot  
Serial  
Text  
NN-NNNNNNNNNNNNNN-  
TTTTTTVV  
WWYY  
UL VIN  
LLLLL  
SSSS  
Type&Ver  
Lot number  
Serial  
Date code  
Datamatrix  
TTTTTTTVV  
LLLLL  
SSSS  
WWYY  
Outline  
Pin table [mm]  
Pin  
1
X
Y
Function  
DC-  
DC-  
DC-  
DC-  
DC-  
DC-  
DC-  
DC-  
GND  
GND  
GND  
GND  
GND  
GND  
GND  
GND  
DC+  
DC+  
DC+  
DC+  
DC+  
DC+  
DC+  
DC+  
G11  
S11  
G12  
S12  
G13  
S13  
G14  
S14  
Therm1  
Therm2  
Ph  
0
0
0
2
3,3  
3
0
6,6  
4
0
9,9  
5
0
13,2  
13,2  
15,9  
15,9  
20,9  
20,9  
23,6  
23,6  
26,3  
26,3  
29  
6
2,7  
0
7
8
2,7  
0
9
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
23  
24  
25  
26  
27  
28  
29  
30  
31  
32  
33  
34  
35  
36  
37  
38  
39  
40  
41  
42  
2,7  
0
2,7  
0
2,7  
0
2,7  
0
29  
34  
2,7  
0
34  
36,7  
36,7  
40  
2,7  
0
0
43,3  
46,6  
49,9  
43,55  
40,55  
3,3  
0
0
16,35  
16,35  
17,1  
17,1  
35,1  
35,1  
36,6  
36,6  
52,4  
52,4  
52,4  
52,4  
52,4  
52,4  
52,4  
52,4  
52,4  
52,4  
0,3  
28,2  
25,2  
11,7  
8,7  
42,9  
36,1  
28,35  
25,65  
22,95  
20,25  
17,55  
14,85  
12,15  
9,45  
Ph  
Ph  
Ph  
Ph  
Ph  
Ph  
Ph  
Copyright Vincotech  
27  
07 Jul. 2021 / Revision 2  
B0-SP07NIA300S5-LM38F58T  
datasheet  
Pinout  
DC+  
17-24  
T11  
D14  
25  
26  
G11  
S11  
C10  
D11  
D12  
T13  
T14  
D15  
29  
30  
G13  
S13  
GND  
9-16  
Ph  
35-42  
D16  
31  
32  
G14  
S14  
C20  
T12  
D13  
27  
28  
G12  
S12  
NTC  
33  
34  
DC-  
1-8  
Therm1  
Therm2  
Identification  
Component  
Voltage  
Current  
Function  
Comment  
ID  
T11, T12  
D11, D12  
T13, T14  
D13, D14  
D15, D16  
C10, C20  
Rt  
IGBT  
FWD  
650 V  
650 V  
650 V  
650 V  
650 V  
630 V  
300 A  
300 A  
300 A  
300 A  
300 A  
Buck Switch  
Buck Diode  
Boost Switch  
Boost Diode  
IGBT  
FWD  
FWD  
Boost Sw. Inv. Diode  
Capacitor (DC)  
Thermistor  
Capacitor  
Thermistor  
Copyright Vincotech  
28  
07 Jul. 2021 / Revision 2  
B0-SP07NIA300S5-LM38F58T  
datasheet  
Packaging instruction  
Handling instruction  
Standard packaging quantity (SPQ) 45  
>SPQ  
Standard  
<SPQ  
Sample  
Handling instructions for flow S3 packages see vincotech.com website.  
Package data  
Package data for flow S3 packages see vincotech.com website.  
Vincotech thermistor reference  
See Vincotech thermistor reference table at vincotech.com website.  
UL recognition and file number  
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.  
Document No.:  
Date:  
Modification:  
Pages  
B0-SP07NIA300S5-LM38F58T-D1-14  
B0-SP07NIA300S5-LM38F58T-D2-14  
19 Nov. 2020  
7 Jul. 2021  
Module marking is updated with UL logo, product is  
unchanged  
DISCLAIMER  
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to  
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations  
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,  
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said  
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons  
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine  
the suitability of the information and the product for reader’s intended use.  
LIFE SUPPORT POLICY  
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval  
of Vincotech.  
As used herein:  
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or  
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be  
reasonably expected to result in significant injury to the user.  
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause  
the failure of the life support device or system, or to affect its safety or effectiveness.  
Copyright Vincotech  
29  
07 Jul. 2021 / Revision 2  

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