TM4953BGS [VBSEMI]
Dual P-Channel 30-V (D-S) MOSFET;型号: | TM4953BGS |
厂家: | VBsemi Electronics Co.,Ltd |
描述: | Dual P-Channel 30-V (D-S) MOSFET |
文件: | 总9页 (文件大小:1886K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
TM4953S/FS
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Dual P-Channel 30-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
Halogen-free
TrenchFET® Power MOSFET
I
D (A)d, e
VDS (V)
RDS(on) (Ω)
Qg (Typ.)
•
0.029 at VGS = - 10 V
0.039 at VGS = - 4.5 V
- 7.3
- 6.3
• 100 % UIS Tested
RoHS
- 30
17 nC
COMPLIANT
APPLICATIONS
•
Load Switches
S
1
S
2
SO-8
S
G
S
D
1
1
2
3
4
8
7
6
5
1
1
2
2
G
G
2
1
D
1
D
2
G
D
2
Top View
D
1
D
2
P-Channel MOSFET
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
A
Parameter
Symbol
Limit
- 30
Unit
VDS
Drain-Source Voltage
Gate-Source Voltage
V
VGS
± 20
- 7.3e
TC = 25 °C
- 7.0e
TC = 70 °C
TA = 25 °C
TA = 70 °C
Continuous Drain Current (TJ = 150 °C)
ID
- 7.3a, b
- 5.9a, b
- 32e
A
IDM
IS
Pulsed Drain Current
- 4.1
TC = 25 °C
Continuous Source-Drain Diode Current
- 2.0a, b
- 20
TA = 25 °C
IAS
Avalanche Current
L = 0.1 mH
EAS
Single-Pulse Avalanche Energy
20
mJ
W
T
C = 25 °C
TC = 70 °C
A = 25 °C
TA = 70 °C
5.0
3.2
PD
Maximum Power Dissipation
2.5a, b
1.6a, b
- 55 to 150
T
TJ, Tstg
Operating Junction and Storage Temperature Range
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta, c
Symbol
Typical
38
Maximum
Unit
°C/W
RthJA
RthJF
t ≤ 10 s
Steady State
50
25
Maximum Junction-to-Foot
20
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. Maximum under Steady State conditions is 85 °C/W.
d. Based on TC = 25 °C.
e. Limited by package.
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SPECIFICATIONS T = 25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
VDS
ΔVDS/TJ
ΔVGS(th)/TJ
VGS(th)
VGS = 0 V, ID = - 250 µA
ID = - 250 µA
Drain-Source Breakdown Voltage
DS Temperature Coefficient
- 30
V
V
- 31
4.5
mV/°C
VGS(th) Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
VDS = VGS, ID = - 250 µA
VDS = 0 V, VGS = ± 20 V
- 1.0
- 30
- 3.0
± 100
- 1
V
IGSS
nA
VDS = - 30 V, VGS = 0 V
IDSS
ID(on)
RDS(on)
gfs
Zero Gate Voltage Drain Current
On-State Drain Currenta
µA
A
VDS = - 30 V, VGS = 0 V, TJ = 55 °C
- 5
VDS ≥ - 10 V, VGS = - 10 V
VGS = - 10 V, ID = - 6.3 A
0.035
0.040
23
Drain-Source On-State Resistancea
Forward Transconductancea
Ω
S
V
GS = - 4.5 V, ID = - 6.2 A
VDS = - 10 V, ID = - 6.1 A
Dynamicb
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
1350
215
185
32
15
4
VDS = - 15 V, VGS = 0 V, f = 1 MHz
VDS = - 15 V, VGS = - 10 V, ID = - 6.1 A
VDS = - 15 V, VGS = - 4.5 V, ID = - 6.1 A
f = 1 MHz
pF
50
25
Qg
Total Gate Charge
nC
Qgs
Qgd
Rg
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
7.5
5.8
10
8
Ω
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
15
15
70
25
70
60
70
30
VDD = - 15 V, RL = 15 Ω
ID ≅ - 1 A, VGEN = - 10 V, Rg = 1 Ω
Turn-Off DelayTime
Fall Time
45
12
42
35
40
16
ns
Turn-On Delay Time
Rise Time
VDD = - 15 V, RL = 15 Ω
ID ≅ - 1 A, VGEN = - 4.5 V, Rg = 1 Ω
Turn-Off DelayTime
Fall Time
Drain-Source Body Diode Characteristics
Continous Source-Drain Diode Current
Pulse Diode Forward Current
IS
ISM
VSD
trr
TC = 25 °C
- 4.1
- 32
- 1.2
60
A
Body Diode Voltage
IS = - 2 A, VGS = 0 V
- 0.75
34
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
ns
nC
Qrr
ta
22
40
IF = - 2 A, dI/dt = 100 A/µs, TJ = 25 °C
11
ns
Reverse Recovery Rise Time
tb
23
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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TYPICAL CHARACTERISTICS 25 C, unless otherwise noted
16
12
8
1.0
0.8
0.6
0.4
0.2
0.0
V
= 10 thru 5 V
= 4 V
GS
T
= - 55 °C
C
V
GS
T
C
= 25 °C
4
V
GS
= 3 V
T
C
= 125 °C
1.5
0
0.0
0.5
DS
1.0
1.5
2.0
0.0
0.5
1.0
2.0
2.5
3.0
V
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.09
0.07
0.05
0.03
0.01
2400
1800
1200
600
0
C
iss
V
V
= 4.5 V
= 10 V
GS
GS
C
oss
C
rss
0
10
20
- Drain Current (A)
30
40
0
6
12
18
24
30
I
D
V
- Drain-to-Source Voltage (V)
DS
On-Resistance vs. Drain Current
Capacitance
10
8
1.8
1.5
1.2
0.9
0.6
I
D
= - 6 . 1 A
I
= - 6 . 3 A
D
V
DS
= 15 V
6
V
DS
= 7.5 V
V
DS
= 22.5 V
4
V
GS
= 10 V
2
V
GS
= 4.5 V
0
0
9
18
27
36
- 50 - 25
0
25
50
75
100 125 150
T - Junction Temperature (°C)
J
Q
- Total Gate Charge (nC)
g
On-Resistance vs. Junction Temperature
Gate Charge
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
10
1
0.10
0.08
0.06
0.04
0.02
0.00
I
= - 6 . 3 A
D
T
J
= 150 °C
T
= 25 °C
J
T
= 125 °C
J
0.1
0.01
T = - 50 °C
J
T
= 25 °C
J
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
V
GS
- Gate-to-Source Voltage (V)
V
SD
- Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.6
0.4
100
80
60
40
20
0
I
= 250 µA
D
0.2
I
= 1 mA
D
0.0
- 0.2
- 50 - 25
0
25
50
75
100 125 150
0.1
0.001
0.01
1
10
T
J
- Temperature (°C)
Time (s)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
100
Limited by R
*
DS(on)
10
1
100 µs
1 ms
10 ms
100 ms
0.1
10 s
1 s, DC
T
= 25 °C
A
Single Pulse
BVDSS Limited
0.01
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V > minimum V at which R is specified
DS(on)
GS
GS
Safe Operating Area
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
15
12
9
Package Limited
6
3
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
Current Derating*
6.0
4.8
3.6
2.4
1.2
0.0
2.0
1.6
1.2
0.8
0.4
0.0
0
25
50
75
100
125
150
0
25
50
T - Ambient Temperature (°C)
A
75
100
125
150
T
- Case Temperature (°C)
C
Power, Junction-to-Foot
Power Derating, Junction-to-Ambient
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1
Duty Cycle = 0.5
0.2
0.1
0.1
Notes:
P
DM
0.05
t
1
t
2
t
t
1
2
0.02
1. Duty Cycle, D =
2. Per Unit Base = R
= 85 °C/W
thJA
(t)
3. T - T = P
JM
Z
A
DM thJA
Single Pulse
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
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SOIC (NARROW): 8-LEAD
JEDEC Part Number: MS-012
8
6
7
2
5
4
E
H
1
3
S
h x 45
D
C
0.25 mm (Gage Plane)
A
All Leads
0.101 mm
0.004"
q
e
B
A
1
L
MILLIMETERS
Max
INCHES
DIM
Min
Min
Max
A
A1
B
C
D
E
e
1.35
0.10
0.35
0.19
4.80
3.80
1.75
0.20
0.51
0.25
5.00
4.00
0.053
0.004
0.014
0.0075
0.189
0.150
0.069
0.008
0.020
0.010
0.196
0.157
1.27 BSC
0.050 BSC
H
h
5.80
0.25
0.50
0°
6.20
0.50
0.93
8°
0.228
0.010
0.020
0°
0.244
0.020
0.037
8°
L
q
S
0.44
0.64
0.018
0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
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RECOMMENDED MINIMUM PADS FOR SO-8
0.172
(4.369)
0.028
(0.711)
0.022
0.050
(0.559)
(1.270)
Recommended Minimum Pads
Dimensions in Inches/(mm)
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