UT138E [UTC]
TRIACS; 双向可控硅![UT138E](http://pdffile.icpdf.com/pdf1/p00105/img/icpdf/UT138E_569124_icpdf.jpg)
型号: | UT138E |
厂家: | ![]() |
描述: | TRIACS |
文件: | 总5页 (文件大小:170K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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UTC UT138E
TRIAC
TRIACS
DESCRIPTION
Glass passivated , sensitive gate triacs in a plastic envelope,
intended for use in general purpose bidirectional switching and
phase control applications, where high sensitivity is required in
all four quadrants.
1
SYMBOL
MT2
TO-220
G
1:MT1
2:MT2
3:GATE
MT1
ABSOLUTE MAXIMUM RATINGS ( Tj=25°C)
PARAMETER
Repetitive Peak Off State Voltage
UT138E-5
SYMBOL
VDRM
IT(RMS)
ITSM
RATING
UNIT
V
500*
600*
800
12
UT138E-6
UT138E-8
RMS On-state Current (Full sine wave, Tmb≤99°C)
Non-repetitive Peak. On-State Current
A
(Full sine wave, Tj=25°C prior to surge)
A
t=20ms
t=16.7ms
95
105
45
I2t For Fusing (t=10ms)
I2t
A2s
Repetitive Rate of Rise of On-state Current after Triggering
(ITM=20A,IG=0.2A, dIG/dt=0.2A/µs)
T2+ G+
50
dIT/dt
A/µs
T2+ G-
50
T2- G-
T2- G+
50
10
Peak Gate Voltage
Peak Gate Current
Peak Gate Power
Average Gate Power (Over any 20ms period)
Operating Junction Temperature
Storage Temperature
VGM
IGM
PGM
PG(AV)
Tj
5
2
5
V
A
W
W
°C
°C
0.5
125
-40~150
Tstg
*Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch
to the on-state. The rate of rise of current should not exceed 15A/µs.
1
UTC UNISONIC TECHNOLOGIES CO., LTD.
QW-R401-011,B
UTC UT138E
TRIAC
THERMAL RESISTANCES
PARAMETER
Thermal Resistance, Junction to Mounting Base
Full cycle
SYMBOL
Rthj-mb
MIN
TYP
60
MAX
UNIT
K/W
1.5
2.0
Half cycle
Thermal Resistance, Junciton to Ambient
In free air
Rthj-a
K/W
STATIC CHARACTERISTICS (Tj=25°C, unless otherwise specified)
PARAMETER
Gate Trigger Current
SYMBOL
TEST CONDITIONS
VD=12V, IT=0.1A
MIN TYP MAX UNIT
T2+ G+
T2+ G-
T2- G-
T2- G+
2.5
4.0
5.0
11
10
10
10
25
IGT
mA
Latching Current
VD=12V, IGT =0.1A
T2+ G+
T2+ G-
T2- G-
T2- G+
3.2
16
4.0
5.5
30
40
30
40
IL
mA
Holding Current
On-State Voltage
Gate Trigger Voltage
IH
VT
VD=12V, IGT=0.1A
IT=15A
VD=12V, IT=0.1A
VD=400V, IT=0.1A, Tj=125°C
VD=VDRM(max) , Tj=125°C
4.0
1.4
0.7
0.4
0.1
30
1.65
1.5
mA
V
V
V
VGT
ID
0.25
Off-state Leakage Current
0.5
mA
DYNAMIC CHARACTERISTICS (Tj=25°C, unless otherwise specified)
PARAMETER
Critical Rate Of Rise Of Off-State
Voltage
SYMBOL
TEST CONDITIONS
VDM=67% VDRM(max), Tj=125°C
Exponential waveform,
Gate open circuit
MIN TYP MAX UNIT
dVD/dt
50
2
V/µs
µs
ITM=16A, VD=VDRM(max),
IG=0.1A dIG/dt=5A/µs
Gate Controlled Turn-on Time
tgt
2
UTC UNISONIC TECHNOLOGIES CO., LTD.
QW-R401-011,B
UTC UT138E
TRIAC
TYPICAL CHARACTERISTICS
Figure 1.Maximum on -state Dissipation.Ptot vs RMS
On-state Current,IT(RMS),Whereα=conduction Angle.
Tmb(max )/C
Figure 4.Maximum Permissible RMS Current IT(RMS)
vs mounting baseTemperature Tmb.
IT(RMS)/A
Ptot/W
20
95
15
α= 180
α
99℃
α= 120
α= 90
α= 60
102.5
110
15
10
5
α
10
5
α= 30
117.5
125
0
0
0
5
10
-50
50
100
150
0
15
IT(RMS)/A
Tmb/℃
Figure 2. Maximum Permissible Non-repetitive
Peak On-state Current ITSM,vs Pulse Width
tp,for Sinusoidal Currents,tp≦20ms.
Figure 5.Maximum Permissible Repetitive RMS on-state
Current IT(RMS),vs Surge Duration,for Sinusoidal
Currents,f=50Hz;Tmb≦99℃.
ITSM/A
IT(RMS)/A
1000
25
20
15
100
10
10
ITSM
time
IT
dIT/dt limit
5
0
T2-G+ quadrant
T
Tj initial=25℃max
1ms
T/s
10ms
100ms
10us
100us
0.1
1
10
0.01
Surge Duration /S
Figure 6.Normalised Gate Trigger Voltage VGT(Tj)/
Figure 3 .Maximum Permissible Non-Repetitive
VGT(25℃),vs Junction Temperature Tj.
peak on-state Current TI SM,vs Number of Cycles,
for Sinusoidal Currents,f=50Hz.
VGT(Tj)
VGT(25℃)
ITSM/A
1.6
100
80
ITSM
time
IT
1.4
1.2
T
Tj initial=25℃max
60
40
1
0.8
20
0
0.6
0.4
0
100
150
-50
50
Tj/℃
100
1
10
1000
Number of Cycles at 50Hz
3
UTC UNISONIC TECHNOLOGIES CO., LTD.
QW-R401-011,B
UTC UT138E
TRIAC
Figure 10.Typical and Maximum
On-state Characteristic.
Figure 7.Normalised Gate Trigger Current
IGT(Tj)/IGT(25℃),vs Junction Temperature Tj.
IGT(Tj)
IGT(25℃)
IT/A
40
30
3
typ
Tj=125℃
Tj=25℃
T2+G+
T2+G-
T2-G-
T2-G+
max
2.5
2
1.5
1
Vo=1.175V
Rs=0.0316 Ohms
20
10
0
0.5
0
-50
0
50
150
100
0
2
2.5
3
0.5
1
1.5
Tj/℃
VT/V
Figure 8.Normalised Latching Current
IL(Tj)/IL(25℃),vs Junction Temperature Tj.
Figure 11.Transient Thermal Impedance
Zth j-mb,vs Pulse Width tp.
Zth j-mb (K/W)
IL(Tj)
IL(25℃)
3
2.5
2
10
1
unidirectional
bidirectional
PD
0.1
1.5
1
tp
0.01
0.5
0
t
0.001
150
-50
0
50
Tj/℃
100
10us 0.1ms
10ms
tp/s
1s
10s
1ms
0.1s
Figure 9.Normalised Holding Current
IH(Tj)/IH(25℃),vs Junction Temperature Tj.
IH(Tj)
IH(25℃)
Figure 12.Typical,critical rate of rise of off-state voltage,
dVD/dt versus junction temperature Tj.
dVD/dt(V/us)
1000
3
2.5
2
100
1.5
1
10
1
0.5
0
150
100
0
-50
50
Tj/℃
0
50
100
150
Tj/℃
4
UTC UNISONIC TECHNOLOGIES CO., LTD.
QW-R401-011,B
UTC UT138E
TRIAC
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
5
UTC UNISONIC TECHNOLOGIES CO., LTD.
QW-R401-011,B
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