UPG16N60EG-T47S-T [UTC]
Power Field-Effect Transistor,;
| 型号： | UPG16N60EG-T47S-T |
| 厂家： | 
Unisonic Technologies |
| 描述： | Power Field-Effect Transistor, |
| 文件： | 总5页 (文件大小：354K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
UPG16N60E
Insulated Gate Bipolar Transistor
600V, SMPS N-CHANNEL IGBT
1
1
DESCRIPTION
TO-247
1
TO-247S
The UTC UPG16N60E is a N-channel IGBT. it uses UTC’s
advanced technology to provide customers with high input
impedance, high switching speed and low conduction loss, etc.
The UTC UPG16N60E is suitable for high voltage switching,
high frequency switch mode power supplies.
TO-3P
FEATURES
* VCE(SAT) ≤ 2.0V @ IC=16A, VGE=15V
* High switching speed
* High input impedance
1
1
* Low conduction loss
TO-220
TO-220F1
SYMBOL
Collector
Gate
Emitte
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Lead Free
Halogen Free
1
2
3
UPG16N60EL-TA3-T
UPG16N60EL-TF1-T
UPG16N60EL-T3P-T
UPG16N60EL-T47-T
UPG16N60EL-T47S-T
UPG16N60EG-TA3-T
UPG16N60EG-TF1-T
UPG16N60EG-T3P-T
UPG16N60EG-T47-T
UPG16N60EG-T47S-T
TO-220
TO-220F1
TO-3P
G
G
G
G
G
C
C
C
C
C
E
Tube
Tube
Tube
Tube
Tube
E
E
E
E
TO-247
TO-247S
Note: Pin Assignment: G: Gate
C: Collector
E: Emitter
UPG16N60EG-TA3-T
(1) T: Tube
(1)Packing Type
(2)Package Type
(3)Green Package
(2) TA3: TO-220, TF3: TO-220F1, T3P: TO-3P
T47: TO-247, T47S: TO-247S
(3) G: Halogen Free and Lead Free, L: Lead Free
MARKING
UTC
UPG16N60E
L: Lead Free
G: Halogen Free
Lot Code
Date Code
1
www.unisonic.com.tw
Copyright © 2019 Unisonic Technologies Co., Ltd
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UPG16N60E
Insulated Gate Bipolar Transistor
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
VCES
RATINGS
600
±20
32
UNIT
V
Collector-Emitter Voltage
Gate to Emitter Voltage Continuous
VGES
V
TC=25°C
A
Continuous Collector Current
Collector Current Pulsed (Note 2)
Continuous Forward Current
IC
ICM
IF
TC=100°C
16
A
80
A
TC=25°C
16
A
TC=100°C
8
A
Forward Current Pulsed
IFM
124
6.9
90
A
Peak Diode Recovery dv/dt (Note 3)
dv/dt
V/ns
W
W
W
TO-220
TO-220F1
TO-3P
32
Power Dissipation
PD
180
TO-247
TO-247S
170
W
Junction Temperature
TJ
-55 ~ +150
-55 ~ +150
°C
°C
Storage Temperature Range
TSTG
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature.
3. IF ≤16A, di/dt ≤200A/μs, VCC ≤ BVCES, Starting TJ=25°C
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
1.38
UNIT
°C/W
°C/W
°C/W
TO-220
TO-220F1
TO-3P
3.9
Junction to Case
θJC
0.69
TO-247
TO-247S
0.73
°C/W
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UPG16N60E
Insulated Gate Bipolar Transistor
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
BVCES
ICES
TEST CONDITIONS
IC=250µA, VGE=0V
VCE=600V, VGE=0V
MIN TYP MAX UNIT
Collector-Emitter Breakdown Voltage
Collector-Emitter Leakage Current
600
4.0
V
µA
V
10
TJ=25°C
1.6
1.8
2.0
Collector-Emitter Saturation Voltage
VCE(SAT) IC=16A, VGE=15V
TJ=150°C
V
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Input Capacitance
VGE(TH)
IGES
CIES
COES
CRES
QG
IC=250µA, VCE= VGE
VCE=0V, VGE=±20V
6.5
V
±100 nA
638
90
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
Output Capacitance
VCE=30V, VGE=0V, f=1MHz
IC=16A, VCE=100V, VGE=10V
Reverse Transfer Capacitance
Total Gate Charge
13
22
Gate-Emitter Charge
QGE
QGC
tD(ON)
tR
5.8
Gate-Collector Charge
Current Turn-On Delay Time
Current Rise Time
8.8
54.7
75.9
65.3
116.7
IC=16A, VCE=50V, VGE=15V,
RG=10Ω
Current Turn-Off Delay Time
Current Fall Time
tD(OFF)
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Forward Voltage Drop
VFM
trr
IF=10A
2.2
V
Reverse Recovery Time
78
ns
μC
IF=10A, dI/dt=100A/μS, VR=400V
Reverse Recovery Charge
Note: Pulse Test: Pulse width≦50μs.
Qrr
0.82
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UPG16N60E
Insulated Gate Bipolar Transistor
TEST CIRCUIT AND WAVEFORMS
90%
10%
VGE
RL=1Ω
VCE
RG=25Ω
90%
10%
+
ICE
td(OFF)I
VDD
trI
tfI
-
td(ON)I
Fig 2. SWITCHING TEST WAVEFORMS
Fig 1. INDUCTIVE SWITCHING TEST CIRCUIT
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UPG16N60E
Insulated Gate Bipolar Transistor
TYPICAL CHARACTERISTICS
Drain Current vs. Drain-Source
Capacitance Characteristics
Voltage
10000
20
9V
VGE=10~20V
CIES
15
1000
100
10
8V
10
5
COES
CRES
Note:
1.TA=25°C
2.Pulse test
7V
0
0
2
4
8
0
10
20
30
40
50
6
Drain-Source Voltage, VDS (V)
Drain-Source Voltage, VDS (V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all UTC products described or contained herein.
UTC products are not designed for use in life support appliances, devices or systems where malfunction
of these products can be reasonably expected to result in personal injury. Reproduction in whole or in
part is prohibited without the prior written consent of the copyright owner. UTC reserves the right to
make changes to information published in this document, including without limitation specifications and
product descriptions, at any time and without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
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