UK1398G-T92-K [UTC]
N-CHANNEL MOSFET FOR HIGH SPEED SWITCHING; N沟道MOSFET用于高速开关
| 型号： | UK1398G-T92-K |
| 厂家： | 
Unisonic Technologies |
| 描述： | N-CHANNEL MOSFET FOR HIGH SPEED SWITCHING |
| 文件： | 总4页 (文件大小：221K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
UK1398
Power MOSFET
N-CHANNEL MOSFET FOR
HIGH SPEED SWITCHING
1
DESCRIPTION
TO-92
The UTC UK1398 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and operation with low
gate voltages. This device is suitable for use as a load switch or in
PWM applications.
3
FEATURES
1
2
* RDS(ON)<22Ω @VGS=2.5V
* RDS(ON)<14Ω @VGS=4V
* Low capacitance
SOT-23
* Low gate charge
* Fast switching capability
* Avalanche energy specified
SYMBOL
2.Drain
3.Gate
1.Source
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Lead Free
Halogen Free
1
2
D
D
D
D
3
UK1398L-AE3-R
UK1398L-T92-B
UK1398L-T92-K
UK1398L-T92-R
UK1398G-AE3-R
UK1398G-T92-B
UK1398G-T92-K
UK1398G-T92-R
SOT-23
TO-92
TO-92
TO-92
S
S
S
S
G
G
G
G
Tape Reel
Tape Box
Bulk
Tape Reel
www.unisonic.com.tw
Copyright © 2011 Unisonic Technologies Co., Ltd
1 of 4
QW-R502-256.F
UK1398
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
PARAMETER
SYMBOL
VDSS
RATINGS
50
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
VGSS
±7.0
V
DC
±100
mA
mA
Continuous Drain Current
Power Dissipation
ID
Pulse(Note 2)
SOT-23
TO-92
±200
200
PD
mW
625
Junction Temperature
Storage Temperature
TJ
+150
°C
°C
TSTG
-55 ~ +150
Note:1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2.
Pulse width≤10ms, Duty cycle≤50%
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
VGS=0V, ID=250µA
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
BVDSS
IDSS
50
V
VDS=50V, VGS=0V
10
µA
µA
IGSS
VGS=±7.0V, VDS=0 V
±5.0
VGS(TH)
VDS=VGS , ID=250µA
1.0
0.6
3.0
1.5
40
V
V
Gate Threshold Voltage
VGS(OFF) VDS=3.0V, ID=1.0µA
1.2
22
14
38
VGS=2.5V, ID=10mA
RDS(ON)
Ω
Static Drain-Source On-Resistance
VGS=4.0V, ID=10mA
20
Ω
Forward Transconductance
DYNAMIC PARAMETERS
Input Capacitance
gFS
VDS=3.0V, ID=10mA
20
mS
CISS
COSS
CRSS
8
7
3
pF
pF
pF
VDS=3.0V, VGS=0V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Turn-ON Delay Time
tD(ON)
tR
tD(OFF)
tF
15
100
30
ns
ns
ns
ns
VDD=3.0V, ID=20mA,
Turn-ON Rise Time
VGS(ON)=3.0V, RG=10Ω,
Turn-OFF Delay Time
Turn-OFF Fall-Time
RL=150 Ω
35
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Forward Voltage VSD IS=1A, VGS=0V
1.3
V
UNISONIC TECHNOLOGIES CO., LTD
2 of 4
QW-R502-256.F
www.unisonic.com.tw
UK1398
Power MOSFET
TYPICAL CHARACTERISTICS
UNISONIC TECHNOLOGS O., LTD
3 of 4
QW-R502-256.F
www.unisonic.com.tw
UK1398
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
4 of 4
QW-R502-256.F
www.unisonic.com.tw
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