UG5N120 [UTC]
NPT N-CHANNEL IGBT WITH ANTI-PARALLEL HYPERFAST DIODES;型号: | UG5N120 |
厂家: | Unisonic Technologies |
描述: | NPT N-CHANNEL IGBT WITH ANTI-PARALLEL HYPERFAST DIODES 双极性晶体管 |
文件: | 总3页 (文件大小:288K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
UG5N120
Preliminary
Insulated Gate Bipolar Transistor
21A, 1200V NPT N-CHANNEL
IGBT WITH ANTI-PARALLEL
HYPERFAST DIODES
DESCRIPTION
The UTC UG5N120 is a NPT N-Channel IGBT, it uses UTC’s
advanced technology to provide the customers with a minimum
on-state resistance, etc.
1
TO-220
The UTC UG5N120 is suitable for AC and DC motor controls,
power supplies, and drivers for solenoids, relays and contactors,
etc.
FEATURES
* Low conduction loss
* Short circuit rating
SYMBOL
Collector
Gate
Emitter
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
TO-220
Packing
Tube
Lead Free
Halogen Free
UG5N120G-TA3-T
C: Collector E: Emitter
1
2
3
UG5N120L-TA3-T
G
C
E
Note: Pin Assignment: G: Gate
UG5N120L-TA3-T
(1) T: Tube
(2) TA3: TO-220
(3) L: Lead Free, G: Halogen Free and Lead Free
(1)Packing Type
(2)Package Type
(3)Green Package
MARKING
U T C
U G 5 N 1 2 0
L: Lead Free
G: Halogen Free
Lot Code
Data Code
1
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Copyright © 2014 Unisonic Technologies Co., Ltd
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UG5N120
Preliminary
Insulated Gate Bipolar Transistor
ABSOLUTE MAXIMUM RATING (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
BVCES
VGES
RATINGS
1200
±20
UNIT
V
Collector to Emitter Voltage
Gate-Emitter Voltage
V
Gate to Emitter Voltage Pulsed
VGEM
±30
V
TC=25°C
21
A
Collector Current Continuous
IC
TC=110°C
10
A
Collector Current Pulsed (Note 1)
Power Dissipation Total at TC=25°C
Power Dissipation Derating TC>25°C
ICM
PD
40
A
167
W
1.33
8
W/°C
µs
µs
°C
°C
Short Circuit Withstand Time (Note 2) at VGE=15V
Short Circuit Withstand Time (Note 2) at VGE=12V
Operating Junction Temperature Range
Storage Temperature Range
tSC
tSC
15
TJ
-55~+150
-55~+150
TSTG
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by maximum junction temperature.
3. ICE=10A, L=400µH, TJ=25°C.
4. VCE(PK)=840V, TJ=125°C, RG=25Ω.
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
RATINGS
0.75
UNIT
°C/W
Junction to Case
θJC
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS
BVCES IC=250µA, VGE=0V
MIN TYP MAX UNIT
Collector to Emitter Breakdown Voltage
Collector to Emitter Leakage Current
1200
V
µA
µA
mA
V
TC=25°C
TC=125°C
TC=150°C
TC=25°C
TC=150°C
250
1.5
ICES
VCE=1200V
100
2.45 2.7
Collector to Emitter Saturation Voltage
VCE(SAT) IC=5A, VGE=15V
VGE(TH) IC=45µA, VCE=VGE
3.7
6.8
4.2
V
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
6.0
30
V
IGES
SSOA
VGEP
VGE=±20V
±250 nA
TJ=150°C, RG=25Ω, VGE=15V,
L=5mH, VCE(PK)=1200V
IC=5A, VCE=600V
Switching SOA
A
Gate to Emitter Plateau Voltage
On-State Gate Charge
10.5
53
V
VGE=15V
65
72
nC
nC
ns
ns
ns
ns
QG(ON) IC=5A, VCE=600V
VGE=20V
60
Current Turn-On Delay Time
Current Rise Time
td(ON)I
220
360
320
120
IGBT and Diode at TJ=25°C
CE=1.0A, VCE=30V, VGE=15V,
RG=25Ω
trl
td(OFF)I
tfl
I
Current Turn-Off Delay Time
Current Fall Time
UNISONIC TECHNOLOGIES CO., LTD
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UG5N120
Preliminary
Insulated Gate Bipolar Transistor
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
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