TIP122-TF3-T [UTC]
NPN EPITAXIAL TRANSISTOR;
| 型号： | TIP122-TF3-T |
| 厂家： | 
Unisonic Technologies |
| 描述： | NPN EPITAXIAL TRANSISTOR |
| 文件： | 总4页 (文件大小：246K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
TIP122
NPN SILICON TRANSISTOR
NPN EPITAXIAL TRANSISTOR
DESCRIPTION
The UTC TIP122 is a NPN epitaxial transistor, designed for use
in general purpose amplifier low-speed switching applications.
EQUIVALENT TEST
C
B
R1
R2
E
(R1≈6kΩ, R2≈0.5kΩ)
ORDERING INFORMATION
Ordering Number
Pin Assignment
Packing
Package
Normal
TIP122-T60-K
Lead Free Plating
1
E
B
B
B
2
3
B
E
E
E
TIP122L-T60-K
TIP122L-TA3-T
TIP122L-TF3-T
TIP122L-TN3-R
C: Collector
TO-126
TO-220
TO-220F
TO-252
C
C
C
C
Bulk
Tube
TIP122-TA3-T
TIP122-TF3-T
Tube
TIP122-TN3-R
Tape Reel
Note: Pin Assignment: E: Emitter
B: Base
MARKING
TO-220 / TO-220F / TO-252
TO-126
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
1 of 4
QW-R204-016.E
TIP122
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA=25°C)
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
IC
RATINGS
UNIT
V
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
IC Collector Current
100
100
V
5
V
5
36
A
TO-126
TO-220
TO-220F
TO-252
W
W
W
W
°C
°C
65
Power Dissipation (TC=25°C)
PD
34
38
Junction Temperature
Storage Temperature
TJ
+150
-55 ~ +150
TSTG
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA=25°C)
PARAMETER
SYMBOL
BVCEO
TEST CONDITIONS
IC=100mA
MIN TYP MAX UNIT
Collector-Emitter Breakdown Voltage
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cut-Off Current
100
V
V
V
V
VCE(SAT)1 IC=3A, IB=12mA
VCE(SAT)2 IC=5A, IB=20mA
2
4
VBE(ON)
ICBO
VCE=3V, IC=3A
VCB=100V
2.5
200 uA
500 uA
Collector-Cut-Off Current
ICEO
VCE=50V
Emitter Cut-Off Current
IEBO
VEB=5V
2
mA
IC=500mA, VCE=3V
IC=3A, VCE=3V
1000
1000
DC Current Gain
hFE
UNISONIC TECHNOLOGIES CO., LTD
2 of 4
QW-R204-016.E
www.unisonic.com.tw
TIP122
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
PD vs. TA
80
60
40
20
0
TO-220
TO-252
TO-220F
TO-126
120
40 60 80 100
140
160
20
0
Case Temperature, TA (°C)
UNISONIC TECHNOLOGIES CO., LTD
3 of 4
QW-R204-016.E
www.unisonic.com.tw
TIP122
NPN SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
4 of 4
QW-R204-016.E
www.unisonic.com.tw
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