TIP102G-TN3-R [UTC]
NPN EPITAXIAL TRANSISTOR; NPN外延型晶体管
| 型号： | TIP102G-TN3-R |
| 厂家： | 
Unisonic Technologies |
| 描述： | NPN EPITAXIAL TRANSISTOR |
| 文件： | 总4页 (文件大小：158K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
TIP102
NPN SILICON TRANSISTOR
NPN EPITAXIAL TRANSISTOR
DESCRIPTION
The UTC TIP102 is designed for using in general purpose
amplifier and switching applications.
FEATURES
* Low VCE(SAT)
* High Current Gain
* Complementary to TIP107
ORDERING INFORMATION
Ordering Number
Pin Assignment
Packing
Package
TO-252
Lead Free
Halogen Free
TIP102G-TN3-R
1
2
3
TIP102L-TN3-R
Tape Reel
B
C
E
www.unisonic.com.tw
Copyright © 2010 Unisonic Technologies Co., Ltd
1 of 4
QW-R209-025.A
TIP102
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (TC=25°C)
PARAMETER
SYMBOL
VCBO
RATINGS
UNIT
V
100
100
5
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
VCEO
V
VEBO
V
DC
8
A
IC
Collector Current
Pulse
15
A
ICP
A
Base Current
DC
IB
1
Collector Power Dissipation
Junction Temperature
Storage Temperature
PC
80
W
TJ
150
°C
°C
TSTG
-65~+150
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
IC=30mA, IB=0A
MIN TYP MAX UNIT
V
Collector-Emitter Sustaining Voltage
Collector-Base Cut-Off Current
Collector-Emitter Cut-Off Current
Emitter-Base Cut-Off Current
ON CHARACTERISTICS
VCEO(SUS)
ICBO
ICEO
IEBO
100
µA
µA
mA
V
V
V
CB=100V, IE=0A
50
50
2
CE=50V, IB=0A
EB=5V, IC=0A
hFE1
hFE2
V
CE=4V, IC=3A
CE=4V, IC=8A
1000
200
20000
DC Current Gain
V
V
V
V
IC=3A, IB=6mA
IC=8A, IB=80mA
VCE=4V, IC=8A
2
Collector-Emitter Saturation Voltage
VCE(SAT)
VBE(ON)
2.5
2.8
Base-Emitter ON Voltage
SMALL-SIGNAL CHARACTERISTICS
Output Capacitance
COB
pF
VCB=10V, IE=0A, f=0.1MHZ
300
UNISONIC TECHNOLOGIES CO., LTD
2 of 4
www.unisonic.com.tw
QW-R209-025.A
TIP102
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
UNISONIC TECHNOLOGES O., LTD
3 of 4
www.unisonic.com.tw
QW-R209-025.A
TIP102
NPN SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
4 of 4
QW-R209-025.A
www.unisonic.com.tw
相关型号：
TIP102L
Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
MOTOROLA
TIP102S
Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
MOTOROLA
TIP102W
Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
MOTOROLA
TIP102WD
Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
MOTOROLA
©2020 ICPDF网 联系我们和版权申明