MJE2955TL-TA3-T [UTC]
Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, LEAD FREE, TO-220, 3 PIN;
| 型号： | MJE2955TL-TA3-T |
| 厂家： | 
Unisonic Technologies |
| 描述： | Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, LEAD FREE, TO-220, 3 PIN 局域网 开关 晶体管 |
| 文件： | 总4页 (文件大小：163K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
MJE2955T
PNP SILICON TRANSISTOR
HIGH VOLTAGE TRANSISTOR
DESCRIPTION
1
TO-220
The UTC MJE2955T is designed for general purpose of amplifier
and switching applications.
1
TO-252
ORDERING INFORMATION
Ordering Number
Pin Assignment
Packing
Package
Lead Free
Halogen Free
1
B
B
2
C
C
3
E
E
MJE2955TL-TA3-T
MJE2955TL-TN3-R
MJE2955TG-TA3-T
MJE2955TG-TN3-R
TO-220
TO-252
Tube
Tape Reel
Note: B: Base C: Collector E: Emitter
www.unisonic.com.tw
1
Copyright © 2013 Unisonic Technologies Co., LTD
QW-R203-012.E
MJE2955T
PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
IC
RATINGS
UNIT
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector current
-70
-60
-5
V
V
V
A
A
-10
-6
Base Current
IB
TO-220
TO-252
75
20
Power Dissipation (TA=25°C)
PD
W
Junction Temperature
Storage Temperature
TJ
+150
°C
°C
TSTG
-55 ~ +150
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. The device is guaranteed to meet performance specification within 0°C ~70°C
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
BVCEO
BVCBO
BVEBO
ICBO
TEST CONDITIONS
IC=-200mA
MIN TYP MAX UNIT
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
-60
-70
-5
V
V
IC=-10mA
IE=-10mA
V
VCB=-70V
-1
mA
Collector Cut-Off Current
ICEO
VCE=-30V
-700 A
ICEX
VCE=-70V, VEB(OFF)=-1.5V
VEB=-5V
-1
mA
mA
Emitter Cut-Off Current
IEBO
-5
VCE(SAT)1
VCE(SAT)2
VBE(ON)
hFE1
IC=-4A, IB=-0.4A
IC=-10A, IB=-3.3A
VCE=-4V, IC=-4A
IC=-4A, VCE=-4V
IC=-10A, VCE=-4V
VCE=-10V, IC=-0.5A, f=1MHz
-1.1
-8.0
-1.8
100
Collector-Emitter Saturation Voltage
Baser-Emitter on Voltage
DC Current Gain
V
V
20
5
hFE2
Current Gain Bandwidth Product
fT
2
MHZ
UNISONIC TECHNOLOGIES CO., LTD
2
www.unisonic.com.tw
QW-R203-012.E
MJE2955T
PNP SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
UNISONIC TECHNOLOGIES CO., LTD
3
www.unisonic.com.tw
QW-R203-012.E
MJE2955T
PNP SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
4
www.unisonic.com.tw
QW-R203-012.E
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