MCR101G-X-XX-T92-K [UTC]
SENSITIVE GATE SILICON CONTROLLED RECTIFIERS REVERSE BLOCKING THYRISTORS; 敏感栅硅控整流器反向阻断晶闸管
| 型号： | MCR101G-X-XX-T92-K |
| 厂家： | 
Unisonic Technologies |
| 描述： | SENSITIVE GATE SILICON CONTROLLED RECTIFIERS REVERSE BLOCKING THYRISTORS |
| 文件： | 总5页 (文件大小：174K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
MCR101
SCR
SENSITIVE GATE SILICON
CONTROLLED RECTIFIERS
REVERSE BLOCKING
THYRISTORS
DESCRIPTION
PNPN devices designed for high volume, line-powered consumer
applications such as relay and lamp drivers, small motor controls,
gate drivers for larger thrusters, and sensing and detection circuits.
Supplied in an inexpensive plastic TO-92 package which is readily
adaptable for use in automatic insertion equipment.
FEATURES
*Sensitive Gate Allows Triggering by Micro Controllers and other
Logic Circuits
*Blocking Voltage to 600V
*On-State Current Rating of 0.8A RMS at 80°C
*High Surge Current Capability – 10A
*Minimum and Maximum Values of IGT, VGT and IH Specified for
Ease of Design
*Immunity to dV/dt – 20V/μsec Minimum at 110°C
*Glass-Passivated Surface for Reliability and Uniformity
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Normal
Lead Free Plating
Halogen Free
1
G
G
2
A
A
3
K
K
MCR101-x-xx-T92-B MCR101L-x-xx-T92-B MCR101G-x-xx-T92-B
MCR101-x-xx-T92-K MCR101L-x-xx-T92-K MCR101G-x-xx-T92-K
TO-92
TO-92
Tape Box
Bulk
Note: Pin Assignment: G: Gate A: Anode K: Cathode
MCR101L-x-xx-T92-B
(1)Packing Type
(2)Package Type
(3)Rank
(1) B: Tape Reel, K: Bulk
(2) T92: TO-92
(3) xx: refer to Classification of IGT
(4) 4: 200V, 6: 400V, 8: 600V
(4)Peak Voltage
(5)Lead Plating
(5) L: Lead Free Plating, Blank: Pb/Sn
(5) G: Halogen Free
www.unisonic.com.tw
Copyright © 2010 Unisonic Technologies Co., Ltd
1 of 5
QW-R301-009,D
MCR101
SCR
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
200
UNIT
Peak Repetitive Off-State Voltage(note)
(TJ=-40 to 110°C, Sine Wave, 50 to 60Hz; Gate
Open)
MCR101-4
MCR101-6
MCR101-8
VDRM,VRRM
V
400
600
On-Sate RMS Current (Tc=80°C) 180° Condition Angles
Peak Non-Repetitive Surge Current
(1/2 cycle, Sine Wave, 60Hz, TJ=25°C)
IT(RMS)
ITSM
0.8
A
A
10
Circuit Fusing Considerations (t=8.3 ms)
I2t
PGM
PG(AV)
IGM
0.415
A2s
W
W
A
Forward Peak Gate Power (TA=25°C, Pulse Width ≤1.0μs)
Forward Average Gate Power (TA=25°C, t=8.3ms)
Peak Gate Current – Forward (TA=25°C, Pulse Width≤1.0μs)
Peak Gate Voltage – Reverse (TA=25°C, Pulse Width≤1.0μs)
Operating Junction Temperature @ Rated VRRM and VDRM
Storage Temperature
0.1
0.1
1
VGRM
TJ
5
V
-40 ~ +110
-40 ~ +150
°C
°C
TSTG
Note: VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate
voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode.
Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the
devices are exceeded.
THERMAL DATA
PARAMETER
SYMBOL
θJA
RATING
200
UNIT
°C/W
°C/W
Junction to Ambient
Junction to Case
θJC
75
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise stated)
PARAMETER SYMBOL TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Peak Forward or Reverse
Blocking Current
Tc=25°C
Tc=125°C
10
μA
I
DRM, IRRM VD=Rated VDRM and VRRM; RGK=1kΩ
100
ON CHARACTERISTICS
Peak Forward On-State Voltage (Note1)
Gate Trigger Current (Continuous
dc)(note2)
VTM
IGT
ITM=1A Peak @ TA=25°C
1.7
V
VAK=7Vdc, RL=100Ω, TC=25°C
40
200 μA
Tc=25 °C
Holding Current (note 3)
Tc=-40 °C
0.5
5
IH
IL
VAK=7Vdc, initiating current=20mA
VAK=7V, Ig=200μA
mA
10
Tc=25°C
0.6
10
Latch Current
mA
15
Tc=-40 °C
Gate Trigger Current
(continuous dc) (Note 2)
Tc=25 °C
Tc=-40 °C
0.62 0.8
1.2
VGT
VAK=7Vdc, RL=100Ω
V
DYNAMIC CHARACTERISTICS
VD=Rated VDRM, Exponential
Waveform, RGK=1000Ω, TJ=110°C
IPK=20A, Pw=10μsec
Critical Rate of Rise of Off-State Voltage
dV/dt
di/dt
20
35
V/μs
Critical Rate of Rise of On-State Current
50 A/μs
diG/dt=1A/μsec, Igt=20mA
Notes: 1. Indicates Pulse Test Width≤1.0ms, duty cycle ≤1%
2. RGK=1000Ω included in measurement.
3. Does not include RGK in measurement.
UNISONIC TECHNOLOGIES CO., LTD
2 of 5
QW-R301-009,C
www.unisonic.com.tw
MCR101
SCR
VOLTAGE CURRENT CHARACTERISTIC OF SCR
SYMBOL
VDRM
IDRM
PARAMETER
Peak Repetitive Off Stat Forward Voltage
Peak Forward Blocking Current
Peak Repetitive Off State Reverse Voltage
Peak Reverse Blocking Current
Peak On State Voltage
VRRM
IRRM
VTM
IH
Holding Current
+ Current
Anode +
VTM
on state
IH
IRRM at VRRM
+ Voltage
IDRM at VDRM
Reverse Blocking Region
(off state)
Forward Blocking Region
(off state)
Reverse Avalanche Region
Anode -
CLASSIFICATION OF IGT
RANK
B
C
AA
AB
AC
AD
23~52μA
RANGE
48~105μA
95~200μA
8~16μA
14~21μA
19~25μA
UNISONIC TECHNOLOGIES CO., LTD
3 of 5
QW-R301-009,C
www.unisonic.com.tw
MCR101
SCR
TYPICAL CHARACTERISTICS
Figure 1. Typical Gate Trigger Current
versus Junction Temperature
Figure 2. Typical Gate Trigger Voltage
versus Junction Temperature
100
90
1.0
0.9
0.8
0.7
80
70
60
50
40
0.6
0.5
0.4
30
20
10
0.3
0.2
-40 -25 -10
5
20 25 50 65 80 95 110
-40 -25 -10
5
20 25 50 65 80 95 110
Junction Temperature, TJ (℃)
Junction Temperature, TJ (℃)
UNISONIC TECHNOLOGIES CO., LTD
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QW-R301-009,C
www.unisonic.com.tw
MCR101
SCR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
5 of 5
QW-R301-009,C
www.unisonic.com.tw
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