MCR101-8-AB-T92-B [UTC]

FH LW SENSITIVE GATE SILICON CONTROLLED RECTIFIERS REVERSE BLOCKING THYRISTORS; FH LW敏感门可控硅整流器反向阻断闸流体
MCR101-8-AB-T92-B
型号: MCR101-8-AB-T92-B
厂家: Unisonic Technologies    Unisonic Technologies
描述:

FH LW SENSITIVE GATE SILICON CONTROLLED RECTIFIERS REVERSE BLOCKING THYRISTORS
FH LW敏感门可控硅整流器反向阻断闸流体

栅极 触发装置 可控硅整流器
文件: 总5页 (文件大小:106K)
中文:  中文翻译
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UNISONIC TECHNOLOGIES CO., LTD  
MCR101  
SCR  
FH LW SENSITIVE GATE  
SILICON CONTROLLED  
RECTIFIERS REVERSE  
BLOCKING THYRISTORS  
1
DESCRIPTION  
PNPN devices designed for high volume, line-powered consumer  
TO-92  
applications such as relay and lamp drivers, small motor controls,  
gate drivers for larger thyristors, and sensing and detection circuits.  
Supplied in an inexpensive plastic TO-92 package which is readily  
adaptable for use in automatic insertion equipment.  
FEATURES  
*Pb-free plating product number: MCR101L  
*Sensitive gate allows triggering by micro controllers and other logic  
circuits  
*Blocking voltage to 600V  
*On-state current rating of 0.8A RMS at 80°C  
*High surge current capability – 10A  
*Minimum and maximum values of IGT, VGT and IH specified for  
ease of design  
*Immunity to dV/dt – 20V/µsec minimum at 110°C  
*Glass-passivated surface for reliability and uniformity  
ORDERING INFORMATION  
Order Number  
Pin Assignment  
Packing  
Package  
Normal  
Lead Free Plating  
1
2
A
A
3
C
C
MCR101-x-xx-T92-B  
MCR101-x-xx-T92-K  
MCR101L-x-xx-T92-B  
MCR101L-x-xx-T92-K  
TO-92  
TO-92  
G
G
Tape Box  
Bulk  
Note: Pin Assignment: G: Gate A: Anode C: Cathode  
MCR101L-x-xx-T92-B  
(1)Packing Type  
(2)Package Type  
(3)Rank  
(1) B: Tape Reel, K: Bulk  
(2) T92: TO-92  
(3) xx: refer to Classification ofIGT  
(4) -4: 200V, -6: 400V, -8: 600V  
(5) L: Lead Free Plating, Blank: Pb/Sn  
(4)Peak Voltage  
(5)Lead Plating  
www.unisonic.com.tw  
Copyright © 2005 Unisonic Technologies Co., Ltd  
1 of 5  
QW-R301-009,C  
MCR101  
SCR  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
RATINGS  
200  
UNIT  
Peak Repetitive Off-State Voltage(note)  
(TJ=-40 to 110°C, Sine Wave, 50 to 60Hz; Gate  
Open)  
MCR101-4  
MCR101-6  
MCR101-8  
VDRM,VRRM  
V
400  
600  
On-Sate RMS Current (Tc=80°C) 180° Condition Angles  
Peak Non-Repetitive Surge Current  
(1/2 cycle, Sine Wave, 60Hz, TJ=25°C)  
IT(RMS)  
ITSM  
0.8  
A
A
10  
Circuit Fusing Considerations (t=8.3 ms)  
I2t  
PGM  
PG(AV)  
IGM  
0.415  
A2s  
W
W
A
Forward Peak Gate Power (TA=25°C, Pulse Width 1.0µs)  
Forward Average Gate Power (TA=25°C, t=8.3ms)  
Peak Gate Current – Forward (TA=25°C, Pulse Width1.0µs)  
Peak Gate Voltage – Reverse (TA=25°C, Pulse Width1.0µs)  
Operating Junction Temperature @ Rated VRRM and VDRM  
Storage Temperature  
0.1  
0.1  
1
VGRM  
TJ  
5
V
-40 ~ +110  
-40 ~ +150  
°C  
°C  
TSTG  
Note: VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate  
voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode.  
Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the  
devices are exceeded.  
THERMAL DATA  
PARAMETER  
SYMBOL  
θJC  
RATING  
75  
UNIT  
°C/W  
°C/W  
Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to Ambient  
θJA  
200  
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise stated)  
PARAMETER SYMBOL TEST CONDITIONS  
MIN TYP MAX UNIT  
OFF CHARACTERISTICS  
Peak Forward or Reverse  
Blocking Current  
Tc=25°C  
Tc=125°C  
10  
µA  
I
DRM, IRRM VD=Rated VDRM and VRRM; RGK=1kΩ  
100  
ON CHARACTERISTICS  
Peak Forward On-State Voltage (Note1)  
Gate Trigger Current (Continuous  
dc)(note2)  
VTM  
IGT  
ITM=1A Peak @ TA=25°C  
1.7  
V
VAK=7Vdc, RL=100, TC=25°C  
40  
200 µA  
Tc=25 °C  
Holding Current (note 3)  
Tc=-40 °C  
0.5  
5
IH  
IL  
VAK=7Vdc, initiating current=20mA  
VAK=7V, Ig=200µA  
mA  
10  
Tc=25°C  
0.6  
10  
Latch Current  
mA  
15  
Tc=-40 °C  
Gate Trigger Current  
(continuous dc) (Note 2)  
Tc=25 °C  
Tc=-40 °C  
0.62 0.8  
1.2  
VGT  
VAK=7Vdc, RL=100Ω  
V
DYNAMIC CHARACTERISTICS  
VD=Rated VDRM, Exponential  
Waveform, RGK=1000, TJ=110°C  
IPK=20A, Pw=10µsec  
Critical Rate of Rise of Off-State Voltage  
dV/dt  
di/dt  
20  
35  
V/µs  
Critical Rate of Rise of On-State Current  
50 A/µs  
diG/dt=1A/µsec, Igt=20mA  
Notes: 1. Indicates Pulse Test Width1.0ms, duty cycle 1%  
2. RGK=1000included in measurement.  
3. Does not include RGK in measurement.  
UNISONIC TECHNOLOGIES CO., LTD  
2 of 5  
QW-R301-009,C  
www.unisonic.com.tw  
MCR101  
SCR  
VOLTAGE CURRENT CHARACTERISTIC OF SCR  
SYMBOL  
VDRM  
IDRM  
PARAMETER  
Peak Repetitive Off Stat Forward Voltage  
Peak Forward Blocking Current  
Peak Repetitive Off State Reverse Voltage  
Peak Reverse Blocking Current  
Peak On State Voltage  
VRRM  
IRRM  
VTM  
IH  
Holding Current  
+ Current  
Anode +  
VTM  
on state  
IH  
IRRM at VRRM  
+ Voltage  
IDRM at VDRM  
Reverse Blocking Region  
(off state)  
Forward Blocking Region  
(off state)  
Reverse Avalanche Region  
Anode -  
CLASSIFICATION OF IGT  
RANK  
B
C
AA  
AB  
AC  
AD  
23~52µA  
RANGE  
48~105µA  
95~200µA  
8~16µA  
14~21µA  
19~25µA  
UNISONIC TECHNOLOGIES CO., LTD  
3 of 5  
QW-R301-009,C  
www.unisonic.com.tw  
MCR101  
SCR  
TYPICAL CHARACTERISTICS  
Figure 1. Typical Gate Trigger Current  
versus Junction Temperature  
Figure 2. Typical Gate Trigger Voltage  
versus Junction Temperature  
100  
90  
1.0  
0.9  
80  
70  
60  
50  
40  
0.8  
0.7  
0.6  
0.5  
0.4  
30  
20  
10  
0.3  
0.2  
-40 -25 -10  
5
20 25 50 65 80 95 110  
-40 -25 -10  
5
20 25 50 65 80 95 110  
Junction Temperature, TJ ()  
Junction Temperature, TJ ()  
Figure 3. Typical Holding Current  
versus Junction Temperature  
Figure 4. Typical Latching Current  
versus Junction Temperature  
1000  
100  
10  
1000  
100  
10  
-40 -25 -10  
5
20 25 50 65 80 95 110  
-40 -25 -10  
5
20 25 50 65 80 95 110  
Junction Temperature, TJ ()  
Junction Temperature, TJ ()  
Figure 5. Typical RMS Current Derating  
Figure 6. Typical On-State Characterstics  
120  
10  
MAXIMUM @ TJ = 25℃  
110  
100  
90  
MAXIMUM@ TJ = 110℃  
DC  
1
80  
180°  
70  
60  
50  
40  
120°  
30°  
0.2  
RMS On-State Current, ITRMS (AMPS)  
60° 90°  
0.1  
0
0.1  
0.3 0.4  
0.5  
0.2 0.8 1.1 1.4 1.7 2.0 2.3 2.6 2.9 3.2 3.5  
Instantaneous On-State Voltage, VT (Volts)  
UNISONIC TECHNOLOGIES CO., LTD  
4 of 5  
QW-R301-009,C  
www.unisonic.com.tw  
MCR101  
SCR  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  
other parameters) listed in products specifications of any and all UTC products described or contained  
herein. UTC products are not designed for use in life support appliances, devices or systems where  
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in  
whole or in part is prohibited without the prior written consent of the copyright owner. The information  
presented in this document does not form part of any quotation or contract, is believed to be accurate  
and reliable and may be changed without notice.  
UNISONIC TECHNOLOGIES CO., LTD  
5 of 5  
QW-R301-009,C  
www.unisonic.com.tw  

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