DTC123EL-AN3-6-R [UTC]

DIGITAL TRANSISTORS (BUILT- IN RESISTORS); 数字晶体管（内置电阻器）


型号：	DTC123EL-AN3-6-R
厂家：	Unisonic Technologies
描述：	DIGITAL TRANSISTORS (BUILT- IN RESISTORS) 数字晶体管（内置电阻器）晶体电阻器小信号双极晶体管数字晶体管开关光电二极管
文件：	总3页 (文件大小：193K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

UNISONIC TECHNOLOGIES CO., LTD

DTC123E

NPN EPITAXIAL SILICON TRANSISTOR

DIGITAL TRANSISTORS

(BUILT- IN RESISTORS)

SOT-23

ꢀ

FEATURES

* Built-in bias resistors that implies easy ON/OFF applications.

* The bias resistors are thin-film resistors with complete isolation to

allow negative input.

SOT-323

SOT-523

ꢀ

EQUIVALENT CIRCUIT

OUT

GND

OUT

*Pb-free plating product number:DTC123EL

GND

ꢀ ORDERING INFORMATION

Order Number

Pin Assignment

Packing

Package

Normal

Lead Free Plating

DTC123E-AE3-6-R

DTC123E-AL3-6-R

DTC123E-AN3-6-R

DTC123EL-AE3-6-R

DTC123EL-AL3-6-R

DTC123EL-AN3-6-R

SOT-23

SOT-323

SOT-523

Tape Reel

DTC123EL-AE3-6-R

(1)Packing Type

(2)Pin Assignment

(3)Package Type

(4)Lead Plating

(1) R: Tape Reel

(2) refer to Pin Assignment

(3) AE3: SOT-23, AL3: SOT-323, AN3: SOT-523

(4) L: Lead Free Plating, Blank: Pb/Sn

ꢀ

MARKING

CC3

www.unisonic.com.tw

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QW-R206-085,A

DTC123E

NPN EPITAXIAL SILICON TRANSISTOR

ꢀ

ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

PARAMETER

SYMBOL

V_CC

RATINGS

UNIT

Supply Voltage

Input Voltage

Output Current

V_IN

-10 ~ +12

100

I_OUT

°C

SOT-523

150

Power Dissipation

P_D

SOT-23/SOT-323

200

Junction Temperature

Storage Temperature

T_J

+150

T_STG

-55 ~ +150

°C

Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ꢀ

ELECTRICAL SPECIFICATIONS (Ta=25°C)

PARAMETER SYMBOL TEST CONDITIONS

MIN

TYP MAX UNIT

V_IN(OFF)V_CC=5V, I_OUT=100µA

V_IN(ON)V_OUT=0.3V, I_OUT=20mA

V_OUT(ON)I_OUT/I_IN=10mA/0.5mA

0.5

Input Voltage

Output Voltage

Input Current

0.1

0.3

3.8

0.5

I_IN

V_IN=5V

µA

Output Current

DC Current Gain

Input Resistance

Resistance Ratio

Transition Frequency

I_OUT(OFF)V_CC=50V, V_IN=0V

G_IN

R₁

V_OUT=5V, I_OUT=20mA

1.54

0.8

2.2

2.86

1.2

KΩ

R₂/R₁

f_T

V_CE=10V, I_E=−5mA, f=100MHz *

250

MHz

* Transition frequency of the device

UNISONIC TECHNOLOGIES CO., LTD

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QW-R206-085,A

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DTC123E

NPN EPITAXIAL SILICON TRANSISTOR

ꢀ

TYPICAL CHARACTERISTIC

Input Voltage vs. Output Current

(ON Characteristics)

Output Current vs. Input Voltage

(OFF Characteristics)

100

10m

V_OUT=0.3V

V_CC=5V

500μ

Ta=-40℃

25℃

Ta=100℃

200μ

100℃

25℃

-40℃

100μ

50μ

20μ

10μ

5μ

500m

200m

100m

2μ

1μ

100μ 200μ500μ

1m 2m 5m 10m 20m 50m 100m

0.5

1.0

1.5

2.0

2.5

3.0

Output Current, I_OUT(A)

InputVoltage, V_I(OFF)(V)

Output Voltage vs. Output Current

DC Current Gain vs. Output Current

V_OUT=5V

OUT/lIN=20

500

500m

200m

200

100

100m

50m

Ta=100℃

25℃

-40℃

20m

10m

Ta=100℃

25℃

-40℃

100μ

500μ

2m 5m10m 20m 50m 100m

200μ

100μ200μ 500μ 1m

2m 5m 10m 20m 100m

Output Current, I_OUT(A)

UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

malfunction of these products can be reasonably expected to result in personal injury. Reproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. The information

presented in this document does not form part of any quotation or contract, is believed to be accurate

and reliable and may be changed without notice.

UNISONIC TECHNOLOGIES CO., LTD

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QW-R206-085,A

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